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41. 发明申请

US20110014756A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20110014756A1
公开(公告)日：2011-01-20
申请号：US12889826
申请日：2010-09-24
申请人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
发明人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L27/12 , H01L27/1277 , H01L27/3244
摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括：基板; 设置在所述基板上的半导体层，并且包括沟道区，源极和漏极区以及在所述源极和漏极区的边缘处形成的具有第一杂质的边缘区，以及可选地在所述沟道区中; 绝缘半导体层的栅极绝缘层; 通过所述栅极绝缘层与所述半导体层绝缘的栅电极; 以及电连接到半导体层的源极和漏极。

42. 发明授权

US07815734B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07815734B2
公开(公告)日：2010-10-19
申请号：US11457491
申请日：2006-07-14
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/04 , C30B25/12
CPC分类号： H01L29/66757 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78675
摘要： Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.
摘要翻译：本发明提供一种薄膜晶体管及其制造方法，其中在基板上形成非晶硅层，在非晶硅层上形成包含不同浓度的金属催化剂的覆盖层图案化以形成覆盖层图案，并且使非晶硅层结晶化，使得在非晶硅层和覆盖层图案之间的界面处形成的晶种的密度和位置受到控制，从而提高了非晶硅层的尺寸和均匀性晶粒，并且其中通过一次结晶工艺在期望的位置选择性地形成所需尺寸和均匀性的多晶硅，导致具有优异和期望性能的薄膜晶体管。

43. 发明授权

US07795082B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07795082B2
公开(公告)日：2010-09-14
申请号：US11741273
申请日：2007-04-27
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L21/00
CPC分类号： H01L21/02672 , H01L21/02488 , H01L21/02532 , H01L21/3226 , H01L27/1277 , H01L27/1288
摘要： A method of fabricating a CMOS thin film transistor includes: providing a substrate; forming an amorphous silicon layer on the substrate; performing a first annealing process on the substrate and crystallizing the amorphous silicon layer into a polysilicon layer; patterning the polysilicon layer to form first and second semiconductor layers; implanting first impurities into the first and second semiconductor layers; implanting second impurities into the first or second semiconductor layer; and performing a second annealing process on the semiconductor layers to remove the metal catalyst remaining in the first or second semiconductor layer, on which the second impurities are implanted, wherein the first impurities are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the second impurities are implanted at a dose of 1×1011/cm2 to 3×1015/cm2.
摘要翻译：制造CMOS薄膜晶体管的方法包括：提供衬底; 在所述基板上形成非晶硅层; 在所述衬底上进行第一退火处理并将所述非晶硅层结晶成多晶硅层; 图案化多晶硅层以形成第一和第二半导体层; 将第一杂质注入到第一和第二半导体层中; 将第二杂质注入第一或第二半导体层; 以及对所述半导体层进行第二退火处理，以去除留在其中注入所述第二杂质的所述第一或第二半导体层中的金属催化剂，其中所述第一杂质以6×10 13 / cm 2至5× 1015 / cm2，第1杂质以1×10 11 / cm 2的剂量注入3×1015 / cm 2。

44. 发明授权

US07772061B2 Method for fabricating semiconductor device using two crystallization methods 有权
标题翻译：使用两种结晶方法制造半导体器件的方法
公开(公告)号：US07772061B2
公开(公告)日：2010-08-10
申请号：US12185229
申请日：2008-08-04
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/8238
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/2022 , H01L27/1255 , H01L27/1277
摘要： A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.
摘要翻译：一种半导体器件，其中薄膜晶体管的半导体层和电容器的第一电极由非晶硅形成，并且半导体层的源极/漏极区域和电容器的第一电极的整体或一部分通过金属诱导结晶法，半导体层的沟道区域通过金属诱导横向结晶法结晶化。

45. 发明授权

US07750348B2 Display device having crystal grain boundaries providing superior driving and luminance characteristics 有权
标题翻译：具有提供优异的驱动和亮度特性的晶粒边界的显示装置
公开(公告)号：US07750348B2
公开(公告)日：2010-07-06
申请号：US10687993
申请日：2003-10-20
申请人： Ok-Byoung Kim , Ki-Yong Lee , Ji-Yong Park
发明人： Ok-Byoung Kim , Ki-Yong Lee , Ji-Yong Park
IPC分类号： H01L29/02 , H01L29/04
CPC分类号： H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/6675 , H01L29/78675
摘要： A display device with a polysilicon substrate, including a display region, a first plurality of thin film transistors in the display region, and primary crystal grain boundaries in the polysilicon substrate in the display region, wherein the primary crystal grain boundaries are inclined to a first direction of current flowing from source to drain of each of the first plurality of thin film transistors at an angle of −30° to 30°.
摘要翻译：具有多晶硅衬底的显示装置，包括显示区域，显示区域中的第一多个薄膜晶体管和显示区域中的多晶硅衬底中的主晶粒边界，其中初级晶粒边界倾斜于第一以第一多个薄膜晶体管的每一个的从源极到漏极的角度为-30°至30°的电流方向。

46. 发明授权

US07608869B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07608869B2
公开(公告)日：2009-10-27
申请号：US11509863
申请日：2006-08-24
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： H01L29/76
CPC分类号： H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L29/66757
摘要： A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle of the polysilicon layer within a range of about 40 to about 80°, forming a semiconductor layer using the polysilicon layer.
摘要翻译：公开了一种薄膜晶体管及其制造方法。该方法包括：依次沉积非晶硅层，覆盖层和金属催化剂层; 退火整个层以将非晶硅层结晶成多晶硅层; 去除覆盖层; 并且当覆盖层被完全去除以使多晶硅层的接触角在约40至约80°的范围内时，使用多晶硅层形成半导体层。

47. 发明申请

US20080217620A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译：薄膜晶体管，其制造方法以及包括其的有机发光二极管显示装置
公开(公告)号：US20080217620A1
公开(公告)日：2008-09-11
申请号：US12045172
申请日：2008-03-10
申请人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
发明人： Byoung-Keon PARK , Tae-hoon Yang , Jin-Wook Seo , Sei-Hwan Jung , Ki-Yong Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/78615 , H01L27/12 , H01L27/1277 , H01L27/3244
摘要： A thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, and including a channel region, source and drain regions, and edge regions having a first impurity formed at edges of the source and drain regions, and optionally, in the channel region; a gate insulating layer insulating the semiconductor layer; a gate electrode insulated from the semiconductor layer by the gate insulating layer; and source and drain electrodes electrically connected to the semiconductor layer.
摘要翻译：薄膜晶体管包括：基板; 设置在所述基板上的半导体层，并且包括沟道区，源极和漏极区以及在所述源极和漏极区的边缘处形成的具有第一杂质的边缘区，以及可选地在所述沟道区中; 绝缘半导体层的栅极绝缘层; 通过所述栅极绝缘层与所述半导体层绝缘的栅电极; 以及电连接到半导体层的源极和漏极。

48. 发明授权

US07385223B2 Flat panel display with thin film transistor 有权
标题翻译：带薄膜晶体管的平板显示器
公开(公告)号：US07385223B2
公开(公告)日：2008-06-10
申请号：US10754543
申请日：2004-01-12
申请人： Jae-Bon Koo , Ji-Yong Park , Hye-Hyang Park , Ki-Yong Lee , Ul-Ho Lee
发明人： Jae-Bon Koo , Ji-Yong Park , Hye-Hyang Park , Ki-Yong Lee , Ul-Ho Lee
IPC分类号： H01L31/036
CPC分类号： H01L21/02675 , G02F1/1368 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1229 , H01L27/1233 , H01L27/1285 , H01L27/1296 , H01L27/3297 , H01L29/04 , H01L29/0684 , H01L29/78696
摘要： A flat panel display is provided. The flat panel display includes a light emitting device and two or more thin film transistors (TFTs) having semiconductor active layers having channel regions, where the thickness of the channel regions of the TFTs are different from each other. Thus, higher switching properties of a switching TFT can be maintained, a more uniform brightness of a driving TFT can be satisfied, and a white balance can be satisfied without changing a size of the TFT active layer.
摘要翻译：提供平板显示器。平板显示器包括发光器件和具有沟道区的半导体有源层的两个或多个薄膜晶体管（TFT），其中TFT的沟道区的厚度彼此不同。因此，可以保持开关TFT的更高的开关特性，可以满足驱动TFT的更均匀的亮度，并且可以在不改变TFT有源层的尺寸的情况下实现白平衡。

49. 发明授权

US07205215B2 Fabrication method of thin film transistor 有权
标题翻译：薄膜晶体管的制造方法
公开(公告)号：US07205215B2
公开(公告)日：2007-04-17
申请号：US11011580
申请日：2004-12-15
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Ki-Yong Lee
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02678 , H01L21/2026 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： The present invention provides a fabrication method of thin film transistor including a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the capping layer, a step of diffusing metal catalyst by selectively irradiating a laser beam onto the metal catalyst layer, and a step of crystallizing the amorphous silicon layer. The present invention has an advantage that a fabrication method of thin film transistor is provided, wherein the fabrication method of thin film transistor improves characteristics of device and obtains uniformity of the device by uniformly controlling diffusion of low concentration of metal catalyst through selective irradiation of laser beam and controlling size of grains and crystal growing position and direction in crystallization of amorphous silicon layer using super grain silicon method.
摘要翻译：本发明提供一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层的步骤，在非晶硅层上形成覆盖层的步骤，在覆盖层上形成金属催化剂层的步骤，通过选择性地将激光束照射到金属催化剂层上来扩散金属催化剂的步骤和使非晶硅层结晶的步骤。本发明的优点在于，提供薄膜晶体管的制造方法，其中薄膜晶体管的制造方法通过选择性地照射激光来均匀地控制低浓度的金属催化剂的扩散，从而提高器件的特性并获得器件的均匀性使用超晶格硅法，晶粒和晶粒生长位置和非晶硅层结晶方向的控制尺寸。

50. 发明申请

US20070049057A1 Heat treatment apparatus and heat treatment method using the same 有权
标题翻译：热处理装置及使用其的热处理方法
公开(公告)号：US20070049057A1
公开(公告)日：2007-03-01
申请号：US11510432
申请日：2006-08-24
申请人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
发明人： Tae-Hoon Yang , Ki-Yong Lee , Jin-Wook Seo , Byoung-Keon Park
IPC分类号： F27D11/00
CPC分类号： F27B17/0025 , F27B5/04 , H01L21/67115 , Y10S414/135
摘要： A heat treatment apparatus and a heat treatment method using the same are disclosed. In the method, a support plate on which a device substrate is mounted is loaded into the heat treatment apparatus using a transfer unit in an in-line manner, and the device substrate mounted on the support plate is heat-treated using the heat treatment apparatus.
摘要翻译：公开了一种热处理装置和使用该处理装置的热处理方法。在该方法中，使用转印单元一体地将其上安装有器件基板的支撑板加载到热处理设备中，并且使用热处理设备对安装在支撑板上的器件基板进行热处理。

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