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41. 发明授权

US06770917B2 High-voltage diode 有权
标题翻译：高压二极管
公开(公告)号：US06770917B2
公开(公告)日：2004-08-03
申请号：US10395425
申请日：2003-03-24
申请人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
发明人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
IPC分类号： H01L29861
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a chipping stopper with an edge passivation containing a-C:H or a-Si. In this manner, the high-voltage diode is inexpensive to manufacture. The diode has a rating for reverse voltages of, in particular, above about 400 V and preferably above about 500 V, and can be fabricated with the least possible process complexity and thus a small number of photo technologies and, in the edge region, can readily be equipped with a channel stopper for avoiding leakage currents and a chipping stopper for limiting the extent of saving defects.
摘要翻译：高压二极管和高压二极管的制造方法仅涉及三个掩模步骤。由于使用调节结构和具有含有-c：H或a-Si的边缘钝化的切屑塞，仅需要三个掩模步骤。以这种方式，高压二极管的制造便宜。二极管的反向电压的额定值尤其高于约400V，优选高于约500V，并且可以以最不可能的工艺复杂性制造，因此可以制造少量的照相技术，并且在边缘区域中容易配备有用于避免泄漏电流的通道止动器和用于限制挽救缺陷的程度的切屑止动器。

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