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    • 41. 发明申请
    • Method and apparatus for bridging devices having interfaces of same layer
    • 用于桥接具有相同层的接口的设备的方法和装置
    • US20060126650A1
    • 2006-06-15
    • US11298762
    • 2005-12-09
    • Chul ZhungHak KimByung AhnHae Jung
    • Chul ZhungHak KimByung AhnHae Jung
    • H04L12/26H04L12/56H04L1/00H04L12/28
    • H04J3/1617
    • A method and apparatus for arbitrating control signals to bridge an SPI-3 interface recommended by the optical internetworking forum (OIF), between devices in an identical layer using the SPI-3 interface are provided. According to the method and apparatus, a bridging apparatus which performs the role of a link layer device between devices in a physical layer using the SPI-3 interface, and the role of a physical layer device between devices in a link layer devices, is disposed so that control signals do not collide with each other when the SPI-3 interface is directly connected between devices in the identical layer. By doing so, data transmission and reception through exchange of control signals between even devices in the same layer is enabled without modification of the conventional devices.
    • 提供了一种用于仲裁控制信号以桥接由光互联论坛(OIF)推荐的SPI-3接口的方法和装置,使用SPI-3接口在相同层中的设备之间。 根据该方法和装置,布置了使用SPI-3接口在物理层中的设备之间执行链路层设备的角色的桥接设备,以及在链路层设备中的设备之间的物理层设备的作用 使得当SPI-3接口直接连接在相同层中的设备之间时,控制信号不会相互碰撞。 通过这样做,通过在同一层中的偶数装置之间交换控制信号进行数据发送和接收,而不改变常规装置。
    • 46. 发明申请
    • Gamma voltage generating apparatus
    • 伽玛电压发生装置
    • US20050062736A1
    • 2005-03-24
    • US10900374
    • 2004-07-28
    • Won HaEun ParkHak Kim
    • Won HaEun ParkHak Kim
    • H01L51/50G09G3/20G09G3/30G09G3/32G09G3/36G09G5/00H05B33/14
    • G09G3/20G09G3/3208G09G2320/0276G09G2320/0666G09G2320/0673G09G2330/028
    • A gamma voltage generating apparatus for reducing the number of parts to simplify a structure thereof is disclosed. The apparatus is operated in various modes such that a brightness value can be changed in correspondence with an external environment. A red gamma voltage generator has at least one variable resistor to generate a plurality of red gamma voltages and control the plurality of red gamma voltages such that said brightness value can be changed in correspondence with each of said various modes. A green gamma voltage generator has at least one variable resistor to generate a plurality of green gamma voltages and control the plurality of green gamma voltages such that said brightness value can be changed in correspondence with each of said various modes. A blue gamma voltage generator has at least one variable resistor to generate a plurality of blue gamma voltages and control the plurality of blue gamma voltages such that said brightness value can be changed in correspondence with each of said various modes.
    • 公开了一种用于减少部件数量以简化其结构的伽马电压产生装置。 该装置以各种模式操作,使得可以根据外部环境改变亮度值。 红色伽马电压发生器具有至少一个可变电阻器以产生多个红色伽马电压并控制多个红色伽马电压,使得所述亮度值可以根据所述各种模式中的每一种而改变。 绿色伽马电压发生器具有至少一个可变电阻器以产生多个绿色伽马电压并且控制多个绿色伽马电压,使得可以根据所述各种模式中的每一种来改变所述亮度值。 蓝色伽马电压发生器具有至少一个可变电阻器以产生多个蓝色伽马电压并且控制多个蓝色伽马电压,使得可以根据所述各种模式中的每一种来改变所述亮度值。
    • 49. 发明授权
    • Cell structure for a semiconductor memory device and method of fabricating the same
    • 半导体存储器件的单元结构及其制造方法
    • US08084801B2
    • 2011-12-27
    • US12654255
    • 2009-12-15
    • Kyoung-Yun BaekYong-Sun KoHak KimYong-Kug Bae
    • Kyoung-Yun BaekYong-Sun KoHak KimYong-Kug Bae
    • H01L21/336
    • H01L27/0207H01L27/10888
    • In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
    • 在存储器件的6F2单元结构及其制造方法中,多个有源区可以在两端部具有第一区域,在中心部分可以具有第二区域。 位线接触焊盘的一部分可以位于第二区域上,另一部分可以位于基板的不与多个有源区域重叠的第三区域上。 位线可以与第三区域的位线接触焊盘连接。 尽管6F2结构的单元电池,电池结构也可以更容易地形成。 多个有源区域可以具有包括主轴和短轴的椭圆形状。 多个有源区域可以被定位在长轴方向上,从而形成有源行,并且可以以这样的结构定位在短轴方向上,使得多个有源区域的中心与相邻的活动区域的中心 相邻活动行中的区域。
    • 50. 发明申请
    • Cell structure for a semiconductor memory device and method of fabricating the same
    • 半导体存储器件的单元结构及其制造方法
    • US20070096155A1
    • 2007-05-03
    • US11581359
    • 2006-10-17
    • Kyoung-Yun BaekYong-Sun KoHak KimYong-Kug Bae
    • Kyoung-Yun BaekYong-Sun KoHak KimYong-Kug Bae
    • H01L27/10H01L29/73
    • H01L27/0207H01L27/10888
    • In a 6F2 cell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F2-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.
    • 在存储器件的6F <2> 单元结构及其制造方法中,多个有源区可以在两端部具有第一区域,在中心部分可以具有第二区域。 位线接触焊盘的一部分可以位于第二区域上,另一部分可以位于基板的不与多个有源区域重叠的第三区域上。 位线可以与第三区域的位线接触焊盘连接。 尽管6F 2结构单位电池,电池结构可能更容易形成。 多个有源区域可以具有包括主轴和短轴的椭圆形状。 多个有源区域可以被定位在长轴方向上,从而形成有源行,并且可以以这样的结构定位在短轴方向上,使得多个有源区域的中心与相邻的活动区域的中心 相邻活动行中的区域。