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41. 发明授权

US07528371B2 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US07528371B2
公开(公告)日：2009-05-05
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G01N23/00
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

42. 发明申请

US20090092033A1 ELECTRIC FIELD SENSOR HAVING VERTICAL STRUCTURE, FABRICATION METHOD THEREOF, AND STORAGE UNIT USING THE SAME 有权
标题翻译：具有垂直结构的电场传感器，其制造方法和使用该方法的存储单元
公开(公告)号：US20090092033A1
公开(公告)日：2009-04-09
申请号：US12138055
申请日：2008-06-12
申请人： Simon BUEHLMANN , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
发明人： Simon BUEHLMANN , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
IPC分类号： G01R27/14 , G11B9/02 , H01L21/20
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.
摘要翻译：电场传感器包括具有掺杂有作为衬底的顶层的高密度掺杂剂的低电阻半导体层的衬底，掺杂有低密度掺杂剂的高电阻半导体层，位于部分低电阻半导体层上的区域和位于高电阻半导体层上的导电层，其中通过流过低电阻半导体层，高电阻半导体层和电阻半导体层的电流的变化来检测电场的变化，导电层。

43. 发明授权

US07419843B2 Method of manufacturing semiconductor probe having resistive tip 失效
标题翻译：制造具有电阻尖端的半导体探针的方法
公开(公告)号：US07419843B2
公开(公告)日：2008-09-02
申请号：US11212605
申请日：2005-08-29
申请人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
发明人： Chul-min Park , Hong-sik Park , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G01Q70/10 , G01Q70/16
摘要： A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.
摘要翻译：一种制造具有电阻尖端的半导体探针的方法。该方法包括在硅衬底上形成具有矩形形状的第一和第二掩模膜，首先蚀刻硅衬底的上表面，通过蚀刻第一掩模膜形成与尖端颈部的宽度相对应的第三掩模膜，形成通过使用第三掩模膜作为掩模对硅衬底进行第二次蚀刻，使尖端颈部的宽度达到预定宽度，并且在除去第三掩模膜之后通过退火硅衬底来形成尖端的峰形成部分。可以制造具有均匀高度的半导体探针和具有均匀颈部宽度的尖端。

44. 发明申请

US20070042522A1 Method of fabricating resistive probe having self-aligned metal shield 有权
标题翻译：制造具有自对准金属屏蔽的电阻式探头的方法
公开(公告)号：US20070042522A1
公开(公告)日：2007-02-22
申请号：US11498095
申请日：2006-08-03
申请人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
发明人： Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B9/1418 , G01Q70/10 , G01Q70/14 , G01Q70/16 , G01Q80/00
摘要： A method of fabricating a resistive probe having a self-aligned metal shield. The method includes sequentially forming a first insulating layer, a metal shield, and a second insulating layer on a resistive tip of a substrate; etching the second insulating layer to expose the metal shield on a resistive region; etching the exposed metal shield; and etching the first insulating layer to expose the resistive region.
摘要翻译：一种制造具有自对准金属屏蔽的电阻式探头的方法。该方法包括在衬底的电阻端上顺序地形成第一绝缘层，金属屏蔽和第二绝缘层; 蚀刻第二绝缘层以在电阻区域上暴露金属屏蔽; 蚀刻暴露的金属屏蔽; 并蚀刻第一绝缘层以暴露电阻区域。

45. 发明申请

US20070040116A1 Semiconductor probe having resistive tip with low aspect ratio and method of fabricating the same 有权
标题翻译：具有低纵横比的电阻尖端的半导体探针及其制造方法
公开(公告)号：US20070040116A1
公开(公告)日：2007-02-22
申请号：US11448723
申请日：2006-06-08
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park
IPC分类号： G12B21/02
CPC分类号： G01Q70/16 , G01Q70/10 , G01Q70/14 , G01Q80/00 , G11B9/02 , G11B9/1409 , Y10S977/861
摘要： A semiconductor probe having a resistive tip with a low aspect ratio and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a resistive tip and a cantilever having an end portion on which the resistive tip is located. The resistive tip doped with a first impurity includes a resistive region formed at a peak of the resistive tip and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor electrode regions formed on inclined surfaces of the resistive tip and heavily doped with the second impurity. The height of the resistive tip is less than the radius of the resistive tip. Accordingly, the spatial resolution of the semiconductor probe is improved.
摘要翻译：提供具有低纵横比的电阻尖端和制造半导体探针的方法的半导体探针。半导体探针包括电阻尖端和悬臂，其具有阻挡尖端所在的端部。掺杂有第一杂质的电阻尖端包括形成在电阻尖端的峰处的电阻区，并且轻掺杂有与第一杂质极性相反的第二杂质，以及形成在电阻尖端的倾斜表面上的第一和第二半导体电极区并重掺杂第二杂质。电阻尖端的高度小于电阻尖端的半径。因此，提高了半导体探针的空间分辨率。

46. 发明申请

US20060157440A1 Semiconductor probe with resistive tip and method of fabricating the same 有权
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060157440A1
公开(公告)日：2006-07-20
申请号：US11322340
申请日：2006-01-03
申请人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
发明人： Ju-hwan Jung , Hyung-cheol Shin , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： C23F1/00 , B44C1/22 , G01N23/00
CPC分类号： G01Q70/16 , G01Q70/14 , G01Q80/00 , G11B9/1409
摘要： A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.
摘要翻译：具有电阻尖端的半导体探针和制造半导体探针的方法。掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区，并且轻掺杂具有与第一杂质极性相反的第二杂质，以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区。半导体探针包括电阻尖端，悬臂具有设置有电阻尖端的端部，设置在悬臂上并覆盖电阻区域的电介质层，以及设置在电介质层上的金属屏蔽层，位置对应于电阻区域。

47. 发明申请

US20060145806A1 Magnetic logic device and methods of manufacturing and operating the same 有权
公开(公告)号：US20060145806A1
公开(公告)日：2006-07-06
申请号：US11320898
申请日：2005-12-30
申请人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
发明人： Sung-dong Kim , Eun-sik Kim , Ju-hwan Jung , Hyoung-soo Ko , Dong-ki Min , Hong-sik Park , Seung-bum Hong
IPC分类号： H01F5/00
CPC分类号： H03K19/16 , H01L43/08
摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

48. 发明申请

US20060060779A1 Semiconductor probe with resistive tip and method of fabricating the same 失效
标题翻译：具有电阻尖端的半导体探针及其制造方法
公开(公告)号：US20060060779A1
公开(公告)日：2006-03-23
申请号：US11219732
申请日：2005-09-07
申请人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
发明人： Hong-sik Park , Kyoung-lock Baeck , Ju-hwan Jung , Hyoung-soo Ko , Chul-min Park , Seung-bum Hong
IPC分类号： G21K7/00
CPC分类号： G11B9/1409 , G01Q60/30 , Y10S977/875 , Y10S977/878 , Y10S977/879
摘要： A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist layer orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist layer on the substrate to cover a portion of the first photoresist layer and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresist layers; and removing the first and second photoresist layers, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.
摘要翻译：具有电阻尖端的半导体探针及其制造方法。该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂层，并且蚀刻所述掩模层使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂层以覆盖所述第一光致抗蚀剂层的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂层覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂层，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

49. 发明授权

US07885170B2 Reading/writing head using electric field, data reading/writing apparatus including the same, and method of manufacturing the same 失效
标题翻译：使用电场的读/写头，包括其的数据读/写装置及其制造方法
公开(公告)号：US07885170B2
公开(公告)日：2011-02-08
申请号：US12142048
申请日：2008-06-19
申请人： Chul-min Park , Ju-hwan Jung , Hyoung-soo Ko
发明人： Chul-min Park , Ju-hwan Jung , Hyoung-soo Ko
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , G11B5/3173
摘要： A data reading/writing head reading/writing data from/to a ferroelectric recording medium by using an electric field effect, includes a semiconductor body having a first plane on which an air bearing pattern is formed and a second plane crossing the first plane. A sensing unit is located on the second plane and reads data written to the ferroelectric recording medium, wherein the second plane is separated from the first plane, and a floating gate is disposed on the sensing unit, wherein an end of the floating gate extends to the first plane to guide an electric field from the ferroelectric recording medium to the sensing unit.
摘要翻译：通过使用电场效应从/向铁电记录介质读取/写入数据的数据读/写头包括半导体本体，其具有形成有空气轴承图案的第一平面和与第一平面交叉的第二平面。感测单元位于第二平面上并读取写入铁电记录介质的数据，其中第二平面与第一平面分离，并且浮动栅极设置在感测单元上，其中浮动栅极的一端延伸到引导从铁电记录介质到感测单元的电场的第一平面。

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