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41. 发明授权

US6008131A Bottom rounding in shallow trench etching using a highly isotropic etching step 失效
标题翻译：使用高度各向同性的蚀刻步骤在浅沟槽蚀刻中进行底部圆整处理
公开(公告)号：US6008131A
公开(公告)日：1999-12-28
申请号：US995340
申请日：1997-12-22
申请人： Chao-Cheng Chen
发明人： Chao-Cheng Chen
IPC分类号： H01L21/3065 , H01L21/762 , H01L21/302
CPC分类号： H01L21/3065 , H01L21/76232
摘要： A method of forming shallow isolation trenches in integrated circuit wafers which prevents wafer damage due to dislocations or the like occurring at sharp corners at the intersection between the sidewalls and bottom of the trench. A trench is formed in the wafer using a series of reactive ion etching steps. The bottom of the trench is then etched using reactive ion etching with etching parameters chosen to produce dry isotropic etching. The dry isotropic etching of the bottom of the trench results in a rounded bottom and sharp corners between the sidewalls and bottom of the trench are avoided.
摘要翻译：在集成电路晶片中形成浅隔离沟槽的方法，其防止由于在沟槽的侧壁和底部之间的交叉处的尖角处发生位错等的晶片损坏。使用一系列反应离子蚀刻步骤在晶片中形成沟槽。然后使用反应离子蚀刻蚀刻沟槽的底部，并且选择蚀刻参数以产生干各向同性蚀刻。沟槽底部的干各向同性腐蚀导致圆形的底部，并避免了沟槽的侧壁和底部之间的尖角。

42. 发明授权

US5994229A Achievement of top rounding in shallow trench etch 失效
标题翻译：在浅沟槽蚀刻中取得顶尖圆角的成就
公开(公告)号：US5994229A
公开(公告)日：1999-11-30
申请号：US5567
申请日：1998-01-12
申请人： Chao-Cheng Chen , Chia-Shiung Tsai
发明人： Chao-Cheng Chen , Chia-Shiung Tsai
IPC分类号： H01L21/3065 , H01L21/762
CPC分类号： H01L21/3065 , H01L21/76232
摘要： A process for forming a shallow trench having steep sidewalls near its bottom and sloping sidewalls at the top is described. The process is in 3 stages. The first stage involves methane trifluoride, carbon tetrafluoride, argon, and oxygen. The second stage involves methane trifluoride and methane monofluoride, while the third stage involves hydrogen bromide, chlorine, and helium/oxygen. If the ratio of the various components at each stage is carefully controlled along with other variables such as discharge power, pressure, and duration, the trench profile described above is obtained with a minimum of deposited polymer material on the sidewalls.
摘要翻译：描述了一种用于形成在其底部附近具有陡峭侧壁并且在顶部具有倾斜侧壁的浅沟槽的工艺。这个过程分3个阶段。第一阶段涉及三氟化甲烷，四氟化碳，氩气和氧气。第二阶段涉及甲烷三氟化氢和甲烷单氟化物，而第三阶段涉及溴化氢，氯气和氦气/氧气。如果每个阶段的各种组分的比例与诸如放电功率，压力和持续时间的其他变量一起被仔细地控制，则上述的沟槽轮廓是通过在侧壁上沉积的最少的聚合物材料获得的。

43. 发明授权

US5981398A Hard mask method for forming chlorine containing plasma etched layer 失效
标题翻译：用于形成含氯等离子体蚀刻层的硬掩模方法
公开(公告)号：US5981398A
公开(公告)日：1999-11-09
申请号：US58122
申请日：1998-04-10
申请人： Chia-Shiung Tsai , Chao-Cheng Chen , Hun-Jan Tao
发明人： Chia-Shiung Tsai , Chao-Cheng Chen , Hun-Jan Tao
IPC分类号： H01L21/3213 , H01L21/3065
CPC分类号： H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A method for forming a chlorine containing plasma etched patterned layer. There is first provided a substrate 10 employed within a microelectronics fabrication. There is then formed over the substrate a blanket target layer 12 formed of a material susceptible to etching within a second plasma employing a chlorine containing etchant gas composition. There is then formed upon the blanket target a blanket hard mask layer 14 formed of a material selected from the group consisting of silsesquioxane spin-on-glass (SOG) materials and amorphous carbon materials. There is then formed upon the blanket hard mask layer a patterned photoresist layer 16. There is then etched while employing the patterned photoresist layer as a first etch mask layer and while employing a first plasma employing a fluorine containing etchant gas composition the blanket hard mask layer to form a patterned hard mask layer. Finally, there is then etched while employing at least the patterned hard mask layer as a second etch mask layer and while employing the second plasma employing the chlorine containing etchant gas composition the blanket target layer to form the patterned target layer.
摘要翻译：一种形成含氯等离子体蚀刻图案层的方法。首先提供了在微电子制造中使用的衬底10。然后在衬底上形成由使用含氯蚀刻剂气体组合物在第二等离子体内易于蚀刻的材料形成的覆盖层目标层12。然后在橡皮布目标上形成由选自倍半硅氧烷旋涂玻璃（SOG）材料和无定形碳材料的材料形成的橡皮布硬掩模层14。然后在橡皮布硬掩模层上形成图案化的光致抗蚀剂层16.然后在使用图案化的光致抗蚀剂层作为第一蚀刻掩模层的同时进行蚀刻，并且在使用含氟蚀刻剂气体组合物的第一等离子体的同时，以形成图案化的硬掩模层。最后，在使用至少图案化的硬掩模层作为第二蚀刻掩模层的同时蚀刻，并且在使用含氯蚀刻剂气体组合物的第二等离子体时，覆盖目标层以形成图案化目标层。

44. 发明申请

US20230015410A1 METHOD FOR PREVENTING OR TREATING GASTROESOPHAGEAL REFLUX DISEASE WITH FIBERS FORMED OF ?-1-4-GLUCAN 有权
公开(公告)号：US20230015410A1
公开(公告)日：2023-01-19
申请号：US17455033
申请日：2021-11-16
申请人： Chao-Cheng Chen
发明人： Chao-Cheng Chen
IPC分类号： A61K31/716 , A61K9/70 , A61K35/74 , A61P1/04
摘要： Provided is a method of preventing or treating gastroesophageal reflux disease, including administering to an subject in need thereof a composition including a plurality of fibers formed of β-1-4-glucan, wherein the fibers have a diameter between 15 nm and 35 nm and a mean length of between 1.5 μm and 3.5 μm.

45. 发明申请

US20220284685A1 Method for Direct Manipulation and Visualization of the 3D Internal Structures of a Tubular Object as They are in Reality Without Any Noticeable Distortion 有权
公开(公告)号：US20220284685A1
公开(公告)日：2022-09-08
申请号：US17674004
申请日：2022-02-17
申请人： Chao-Cheng Chen , Chao-Yu Chen
发明人： Chao-Cheng Chen , Chao-Yu Chen
IPC分类号： G06T19/20 , G06T7/00 , G06T7/10
摘要： In many applications, the assessment of the internal structures of tubular structures (such as in medical imaging, blood vessels, bronchi, and colon) has become a topic of high interest. Many 3D visualization techniques, such as “fly-through” and curved planar reformation (CPR), have been used for visualization of the lumens for medical applications. However, all the existing visualization techniques generate highly distorted images of real objects. This invention provides direct manipulation based on the centerline of the object and visualization of the 3D internal structures of a tubular object without any noticeable distortion. For the first time ever, the lumens of a human colon is visualized as it is in reality. In many medical applications, this can be used for diagnosis, planning of surgery or stent placements, etc. and consequently improves the quality of healthcare significantly. The same technique can be used in many other applications.

46. 发明授权

US09287179B2 Composite dummy gate with conformal polysilicon layer for FinFET device 有权
标题翻译：用于FinFET器件的具有适形多晶硅层的复合伪栅极
公开(公告)号：US09287179B2
公开(公告)日：2016-03-15
申请号：US13353975
申请日：2012-01-19
申请人： Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
发明人： Yuan-Sheng Huang , Tzu-Yen Hsieh , Ming-Ching Chang , Chao-Cheng Chen , Chia-Jen Chen
IPC分类号： H01L29/78 , H01L21/8238 , H01L29/66 , H01L27/092
CPC分类号： H01L29/66545 , H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L27/0924 , H01L29/0649 , H01L29/66795 , H01L29/785
摘要： The present disclosure involves a FinFET. The FinFET includes a fin structure formed over a substrate. A gate dielectric layer is least partially wrapped around a segment of the fin structure. The gate dielectric layer contains a high-k gate dielectric material. The FinFET includes a polysilicon layer conformally formed on the gate dielectric layer. The FinFET includes a metal gate electrode layer formed over the polysilicon layer. The present disclosure provides a method of fabricating a FinFET. The method includes providing a fin structure containing a semiconductor material. The method includes forming a gate dielectric layer over the fin structure, the gate dielectric layer being at least partially wrapped around the fin structure. The method includes forming a polysilicon layer over the gate dielectric layer, wherein the polysilicon layer is formed in a conformal manner. The method includes forming a dummy gate layer over the polysilicon layer.
摘要翻译：本公开涉及FinFET。 FinFET包括在衬底上形成的翅片结构。栅介质层最少部分地缠绕在翅片结构的一段上。栅介质层包含高k栅介质材料。 FinFET包括在栅介质层上共形形成的多晶硅层。 FinFET包括在多晶硅层上形成的金属栅极电极层。本公开提供了制造FinFET的方法。该方法包括提供包含半导体材料的翅片结构。该方法包括在鳍结构上方形成栅极电介质层，栅介质层至少部分地围绕翅片结构缠绕。该方法包括在栅介质层上形成多晶硅层，其中多晶硅层以保形方式形成。该方法包括在多晶硅层上形成伪栅极层。

47. 发明授权

US08765556B2 Method of fabricating strained structure in semiconductor device 有权
标题翻译：制造半导体器件中应变结构的方法
公开(公告)号：US08765556B2
公开(公告)日：2014-07-01
申请号：US12645834
申请日：2009-12-23
申请人： Yu-Rung Hsu , Chen-Hua Yu , Chao-Cheng Chen , Ming-Huan Tsai , Hsien-Hsin Lin , Hsueh-Chang Sung
发明人： Yu-Rung Hsu , Chen-Hua Yu , Chao-Cheng Chen , Ming-Huan Tsai , Hsien-Hsin Lin , Hsueh-Chang Sung
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/30608 , H01L21/3065 , H01L21/3083 , H01L29/165 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7834
摘要： The present disclosure provides a semiconductor device that includes a semiconductor substrate, a gate structure disposed on a portion of the substrate, and strained structures disposed at either side of the portion of the substrate and formed of a semiconductor material different from the semiconductor substrate. The portion of the substrate is T shaped having a horizontal region and a vertical region that extends from the horizontal region in a direction away from a surface of the substrate.
摘要翻译：本公开提供了一种半导体器件，其包括半导体衬底，设置在衬底的一部分上的栅极结构以及设置在衬底的该部分的任一侧的应变结构，并且由与半导体衬底不同的半导体材料形成。衬底的部分是具有水平区域的垂直区域和从远离衬底表面的方向从水平区域延伸的垂直区域。

48. 发明申请

US20130273711A1 METHOD OF FORMING A FINFET DEVICE 有权
标题翻译：形成FINFET器件的方法
公开(公告)号：US20130273711A1
公开(公告)日：2013-10-17
申请号：US13449118
申请日：2012-04-17
申请人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
发明人： Chia-Chu Liu , Kuei-Shun Chen , Chih-Hsiung Peng , Chi-Kang Chang , Chiang Mu-Chi , Sheng-Yu Chang , Hua Feng Chen , Chao-Cheng Chen , Ryan Chia-Jen Chen
IPC分类号： H01L21/762
CPC分类号： H01L21/3086 , H01L21/76224
摘要： A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.
摘要翻译：公开了一种制造装置的方法。一种示例性的方法包括提供衬底并在衬底上形成多个鳍。该方法还包括在第一纵向方向上在基板中形成第一开口。该方法还包括在第二纵向方向上在基板中形成第二开口。第一和第二纵向是不同的。该方法还包括在第一和第二开口中沉积填充材料。

49. 发明授权

US08529783B2 Method for backside polymer reduction in dry-etch process 有权
标题翻译：干蚀刻工艺中背面聚合物还原的方法
公开(公告)号：US08529783B2
公开(公告)日：2013-09-10
申请号：US12798201
申请日：2010-03-30
申请人： Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
发明人： Huang-Ming Chen , Chun-Li Chou , Chao-Cheng Chen , Hun-Jan Tao
IPC分类号： H01L21/302
CPC分类号： H01L21/68735 , H01J37/3244 , H01J37/32642 , H01L21/02046 , H01L21/31116 , H01L21/67069 , Y10S156/914 , Y10S156/915 , Y10T279/23
摘要： A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.
摘要翻译：防止在半导体衬底的背面形成污染性聚合物膜的方法包括提供在蚀刻操作期间释放氧气的氧浸渍聚焦环和/或氧浸渍卡盘。该方法还通过在冷却气体混合物中混合氧将氧气输送到衬底，在蚀刻和清洁衬底期间将聚焦环保持在不高于衬底温度的温度，使用包括悬浮衬底的两步骤等离子体清洗序列在卡盘上方

50. 发明申请

US20130047101A1 PERSONAL SERVICE MENU CONSTRUCTION SYSTEM AND METHOD AND PERSONAL SERVICE MENU PROVISION METHOD THEREOF 审中-公开
标题翻译：个人服务菜单建筑系统及方法和个人服务菜单提供方法
公开(公告)号：US20130047101A1
公开(公告)日：2013-02-21
申请号：US13586856
申请日：2012-08-15
申请人： Lih-Shyang Chen , Chih-Ching Yang , Chao-Cheng Chen , Chao-Yu Chen
发明人： Lih-Shyang Chen , Chih-Ching Yang , Chao-Cheng Chen , Chao-Yu Chen
IPC分类号： G06F3/01
CPC分类号： G06F3/0482 , G06F8/38
摘要： A personal service menu construction system is provided for an application software to construct a homemade function menu, including: a selection module for setting required function options from a plurality of function options of the application software; an integration module for receiving the function options set by the selection module such that the function options set by the selection module are edited or packaged and integrated as a personal service menu; and a construction module for inputting the personal service menu to the application software. A personal service menu provision method is provided such that the personal service menu can be saved in a storage device and inputted to the same application software of another electronic device.
摘要翻译：提供个人服务菜单构建系统，用于应用软件构建自制功能菜单，包括：选择模块，用于根据应用软件的多个功能选项设置所需的功能选项; 集成模块，用于接收由选择模块设置的功能选项，使得由选择模块设置的功能选项被编辑或打包并集成为个人服务菜单; 以及用于将个人服务菜单输入到应用软件的构建模块。提供个人服务菜单提供方法，使得个人服务菜单可以保存在存储设备中并输入到另一电子设备的相同应用软件。

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