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41. 发明授权

US07764340B2 Optical interference filter that performs excellent color separation, and liquid crystal display, electroluminescence display and projection display apparatus having the optical interference filter 有权
标题翻译：具有优异的分色性的光干涉滤光器，具有光干涉滤光器的液晶显示器，电致发光显示器和投影显示装置
公开(公告)号：US07764340B2
公开(公告)日：2010-07-27
申请号：US11898408
申请日：2007-09-12
申请人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
发明人： Yuichi Inaba , Takumi Yamaguchi , Daisuke Ueda
IPC分类号： G02F1/1335
CPC分类号： G02B5/285 , G02F2001/133521 , H01L27/322 , H05B33/22
摘要： An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.
摘要翻译：一种光学干涉滤光器，其主要成分是膜元件。该薄膜构件包括多个沿着表面方向离散布置的窗口区域，该多个窗口区域使用光学干涉的作用选择性地发送具有基本上属于可见光谱的波段的光，该多个窗口区域沿离散方向布置在表面方向上，并且一个或多个边界区域使用光学干涉的作用选择性地发射具有基本上属于不可见光谱的不可见光谱的波段的光，所述一个或多个边界区域位于相邻窗口区域之间。

42. 发明申请

US20100172387A1 NITRIDE SEMICONDUCTOR LASER DIODE 有权
标题翻译：氮化物半导体激光二极管
公开(公告)号：US20100172387A1
公开(公告)日：2010-07-08
申请号：US12686839
申请日：2010-01-13
申请人： Tetsuzo UEDA , Daisuke Ueda
发明人： Tetsuzo UEDA , Daisuke Ueda
IPC分类号： H01S5/20 , H01S5/323
CPC分类号： H01S5/32341 , H01S5/021 , H01S5/2201
摘要： A nitride semiconductor laser device includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor laminate that includes a plurality of semiconductor layers formed on the substrate and includes a multiple quantum well active layer, each of the plurality of semiconductor layers being made of group III-V nitride. The semiconductor laminate has a plane parallel to a {011} plane which is a plane orientation of silicon as a cleavage face and the cleavage face constructs a facet mirror.
摘要翻译：氮化物半导体激光器件包括：由主表面的平面取向为{100}面的硅制成的衬底; 以及半导体层叠体，其具有形成在所述基板上的多个半导体层，所述半导体层叠体具有多量子阱活性层，所述多个半导体层中的每一个均由III-V族氮化物构成。半导体层叠体具有与{011}平面平行的平面，其是作为解理面的硅的平面取向，并且切割面构成小平面镜。

43. 发明申请

US20100097105A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20100097105A1
公开(公告)日：2010-04-22
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03B1/00 , H01L29/20 , H01L29/24 , H01L29/772 , H03K17/56
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译：半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

44. 发明授权

US07674719B2 Via hole machining for microwave monolithic integrated circuits 有权
标题翻译：微波单片集成电路的通孔加工
公开(公告)号：US07674719B2
公开(公告)日：2010-03-09
申请号：US11194419
申请日：2005-08-01
申请人： Ming Li , Xinbing Liu , Hiroyuki Sakai , Masaaki Nishijima , Daisuke Ueda
发明人： Ming Li , Xinbing Liu , Hiroyuki Sakai , Masaaki Nishijima , Daisuke Ueda
IPC分类号： H01L21/302
CPC分类号： B23K26/0624 , B23K26/40 , B23K2103/50
摘要： A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire substrate such that each focused pulse of laser light ablates a volume of the sapphire substrate having a depth less than the substrate thickness. The beam spot of the focused laser light pulses is scanned over a via portion of the first surface of the sapphire substrate. The sapphire substrate is moved in a direction substantially normal to the first surface to control the volume of the sapphire substrate ablated by each pulse of laser light to be substantially constant. The pulsing and scanning steps are repeated until the via is formed extending from the first surface to the second surface of the sapphire substrate.
摘要翻译：一种在具有包括超快脉冲激光源的激光加工系统的蓝宝石衬底中形成通孔的方法。提供蓝宝石衬底。激光的脉冲基本上聚焦到蓝宝石衬底的第一表面上的束斑上，使得每个聚焦的激光脉冲消除了具有小于衬底厚度的深度的蓝宝石衬底的体积。聚焦激光脉冲的束斑在蓝宝石衬底的第一表面的通孔部分上扫描。蓝宝石衬底沿着基本上垂直于第一表面的方向移动，以控制由每个激光脉冲消融的蓝宝石衬底的体积基本恒定。重复脉冲和扫描步骤，直到形成从蓝宝石衬底的第一表面延伸到第二表面的通孔。

45. 发明授权

US07595498B2 Electromagnetic wave generation apparatus and manufacturing method of electromagnetic wave generation apparatus 有权
标题翻译：电磁波发生装置及电磁波发生装置的制造方法
公开(公告)号：US07595498B2
公开(公告)日：2009-09-29
申请号：US11195812
申请日：2005-08-03
申请人： Shinichi Takigawa , Daisuke Ueda
发明人： Shinichi Takigawa , Daisuke Ueda
IPC分类号： H01L29/12
CPC分类号： H01J21/04 , H01J9/244 , H01L31/03048 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.
摘要翻译：本发明提供一种紧凑型并产生高功率太赫兹波的电磁波产生装置。电磁波发生装置包括：基板; 具有光电子发射部分的第一电极，形成在所述基板的一个表面上; 形成在所述基板的表面上的第二电极; 电源，其在第一电极和第二电极之间施加电压，使得第二电极的电位变得高于第一电极的电位; 以及辐射时间调制光和波长调制光中的一个的光源，并且在该装置中，光照射部分（a）在照射光时发射电子，并且（b）被放置在来自光的入射光的位置源极进入并发射出的电子运行到第二电极的电子入射平面。

46. 发明申请

US20090121410A1 SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS PROVIDED THEREWITH 有权
标题翻译：供纸装置和图像形成装置
公开(公告)号：US20090121410A1
公开(公告)日：2009-05-14
申请号：US12267647
申请日：2008-11-10
申请人： Daisuke Ueda , Akira KOSUGI
发明人： Daisuke Ueda , Akira KOSUGI
IPC分类号： B65H5/08
CPC分类号： B65H3/48 , B65H3/128 , B65H7/16 , B65H2405/15 , B65H2406/41 , B65H2511/11 , B65H2515/212 , B65H2220/01 , B65H2220/02
摘要： A sheet feeding device includes: a sheet feeding tray adapted to stack a sheet bundle including a plurality of sheets thereon; a blowing section which blows air against a leading edge of the sheet bundle in a sheet conveyance direction from a front side of the sheet conveyance direction; a sticking and conveying section which sticks an uppermost sheet stacked on the sheet feeding tray by air sucking, and feeds the uppermost sheet to a conveyance roller; a sucking duct provided inside the sticking and conveying section, which is divided into a plurality of ducts in the sheet conveyance direction; and an intercepting member which intercepts at least one of the plurality of divided ducts.
摘要翻译：供纸装置包括：供纸托盘，其适于在其上堆叠包括多张纸的纸张捆; 吹送部，其从所述片材输送方向的前侧沿片材输送方向吹向所述片材摞的前端; 粘贴输送部，其通过空气吸附粘贴堆叠在供纸盘上的最上面的纸张，并将最上面的纸张供给到输送辊; 设置在所述输送输送部的内侧的吸引管，其在所述输送方向被分割成多个管道; 以及拦截所述多个分割管道中的至少一个的拦截构件。

47. 发明申请

US20080266012A1 METHOD FOR CONTROLLING HIGH-FREQUENCY RADIATOR 审中-公开
标题翻译：控制高频散热器的方法
公开(公告)号：US20080266012A1
公开(公告)日：2008-10-30
申请号：US12109804
申请日：2008-04-25
申请人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Kazuhiro Yahata , Takashi Uno , Hiroyuki Sakai , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03L7/099
CPC分类号： H03H7/40 , H05B6/686 , H05B6/705 , Y02B40/146
摘要： A method for controlling a high-frequency radiator includes the steps of: (a) applying a high-frequency radiation through the solid-state oscillator and the antenna; (b) sensing part of the high-frequency radiation returned from the antenna to the solid-state oscillator; (c) adjusting radiation/propagation conditions for the high-frequency radiation on the basis of the sensed results in the step (b), the high-frequency radiation propagating from the solid-state oscillator to the antenna; and (d) after the step (c), applying the high-frequency radiation through the solid-state oscillator and the antenna to a target object. In the step (c), the oscillation frequency of the solid-state oscillator, the power of the high-frequency radiation applied by the solid-state oscillator, the power supply voltage supplied to the solid-state oscillator, the impedance match between the output impedance of the solid-state oscillator and the impedance of the antenna, or any other condition is changed.
摘要翻译：一种用于控制高频辐射器的方法包括以下步骤：（a）通过固态振荡器和天线施加高频辐射; （b）感测从天线返回到固态振荡器的一部分高频辐射; （c）基于步骤（b）中检测到的结果，调整从固态振荡器传播到天线的高频辐射来调整高频辐射的辐射/传播条件; 和（d）在步骤（c）之后，将高频辐射通过固态振荡器和天线施加到目标对象。在步骤（c）中，固态振荡器的振荡频率，由固态振荡器施加的高频辐射的功率，提供给固态振荡器的电源电压，固体振荡器的输出阻抗和天线的阻抗，或任何其他条件改变。

48. 发明授权

US07439552B2 Semiconductor light-emitting device and method for fabricating the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07439552B2
公开(公告)日：2008-10-21
申请号：US11492130
申请日：2006-07-25
申请人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
发明人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/38
摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
摘要翻译：半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。

49. 发明授权

US07425732B2 Nitride semiconductor device 失效
标题翻译：氮化物半导体器件
公开(公告)号：US07425732B2
公开(公告)日：2008-09-16
申请号：US11410920
申请日：2006-04-26
申请人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
发明人： Tetsuzo Ueda , Satoshi Nakazawa , Daisuke Ueda , Toshiyuki Takizawa
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L31/0304 , H01L31/03046 , H01L31/035236 , H01L31/1035 , H01L33/06 , H01S5/322 , H01S5/34333 , Y02E10/544
摘要： A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
摘要翻译：氮化物半导体器件包括包含周期性堆叠的第一氮化物半导体层和第二氮化物半导体层的有源层，所述第二氮化物半导体层与第一氮化物半导体层的组成不同。在第一氮化物半导体层中的导带的下边缘处的能量低于第二氮化物半导体层中的导带的下边缘处的能量，并且第一氮化物半导体层中的导带的上边缘处的能量氮化物半导体层比在第二氮化物半导体层中的价带的上边缘处的能量低。

50. 发明申请

US20080099681A1 Infrared Detector and Process for Fabricating the Same 审中-公开
标题翻译：红外探测器及其制造方法
公开(公告)号：US20080099681A1
公开(公告)日：2008-05-01
申请号：US10589724
申请日：2004-02-17
申请人： Yasuhiro Shimada , Daisuke Ueda
发明人： Yasuhiro Shimada , Daisuke Ueda
IPC分类号： G01J5/00 , H01L21/00
CPC分类号： G01J5/20 , H01C7/045 , H01C17/08 , H01L27/14669 , H01L27/14683 , H01L31/09 , H01L31/109
摘要： First, an electrode is formed on an insulation layer that has been formed on a silicon substrate, when manufacturing an infrared detection device. The electrode has a shape matching that of a thermal resistance element constituting the infrared detection device. A semiconductor substrate is placed in a reaction chamber, given a predetermined potential, and heated. Next, a material of a thermal resistor substance constituting the thermal resistance element is vaporized into a gaseous material, and the gaseous material is ion-clusterized and supplied into the reaction chamber. The gaseous material collects toward the electrode as a result of an action of an electric field generated by giving the electrode the predetermined potential. The gaseous material that came into contact with the electrode is stabilized by receiving electrons, and thermally decomposes, thus growing a thermal resistor substance on the electrode.
摘要翻译：首先，在制造红外线检测装置时，在形成于硅基板上的绝缘层上形成电极。电极的形状与构成红外线检测装置的热电阻元件的形状一致。将半导体衬底放置在反应室中，给定预定电位并加热。接下来，构成热电阻元件的热电阻体的材料蒸发成气态物质，气态物质离子聚集并供给反应室。由于通过给予电极预定电位而产生的电场的作用，气态材料朝向电极聚集。与电极接触的气体材料通过接收电子而被稳定，并且热分解，从而在电极上生长热电阻物质。

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