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41. 发明授权

US07262941B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US07262941B2
公开(公告)日：2007-08-28
申请号：US10856180
申请日：2004-05-28
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5/39
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： An NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer. As a result of their structure and the method of their fabrication, these elements have higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件和包括单个镜面反射纳米氧化物层（NOL）或包含非金属层的双层和镜面反射纳米氧化物层反射纳米氧化层。由于它们的结构及其制造方法的结果，这些元件具有比现有技术的元件更高的GMR比和更低的电阻。

42. 发明授权

US07180712B1 Shield structure design to improve the stability of an MR head 有权
标题翻译：盾构结构设计提高MR头的稳定性
公开(公告)号：US07180712B1
公开(公告)日：2007-02-20
申请号：US09513873
申请日：2000-02-28
申请人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
发明人： Min Li , Simon H. Liao , Cheng T. Horng , Kochan Ju
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G11B5/112 , G11B5/3912 , H01L43/08
摘要： A method for forming a laminated shield to improve the stability and performance of an MR read head and the MR read head formed using that shield. The shield consists of two layers of ferromagnetic material separated by a layer of ruthenium, allowing the ferromagnetic layers to form an antiferromagnetic configuration by means of a quantum mechanical exchange interaction. The antiferromagnetic configuration has a stable domain structure and a magnetization that forms closed loops around the shield edges thereby reducing noise in the readback signal and reducing disturbances to the magnetic state of the sensor element.
摘要翻译：一种用于形成层叠屏蔽以提高使用该屏蔽形成的MR读取头和MR读取头的稳定性和性能的方法。屏蔽由两层铁磁材料组成，由一层钌分离，允许铁磁层通过量子力学交换相互作用形成反铁磁性结构。反铁磁构造具有稳定的畴结构和磁化，其在屏蔽边缘周围形成闭环，从而降低回读信号中的噪声并减少对传感器元件的磁状态的干扰。

43. 发明授权

US06909583B2 FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06909583B2
公开(公告)日：2005-06-21
申请号：US10437090
申请日：2003-05-13
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

44. 发明授权

US06729014B2 Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head 失效
标题翻译：磁辅助读取磁道宽度定义用于引导覆盖顶部自旋阀GMR磁头
公开(公告)号：US06729014B2
公开(公告)日：2004-05-04
申请号：US09953542
申请日：2001-09-17
申请人： Charles C. Lin , Cheng T. Horng , Min Li , Kochan Ju
发明人： Charles C. Lin , Cheng T. Horng , Min Li , Kochan Ju
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.
摘要翻译：一种用于形成具有新型导电引线覆盖结构的顶部自旋阀SyAP GMR读取传感器的方法和如此形成的传感器。引线覆盖层在SyAP钉扎层内的位置处电传感器接触传感器，从而同时确保改善的电接触并破坏传感器在接合处的GMR性能，以改善传感器轨道宽度的定义。

45. 发明授权

US06396671B1 Ruthenium bias compensation layer for spin valve head and process of manufacturing 失效
标题翻译：用于自旋阀头的钌偏置补偿层和制造过程
公开(公告)号：US06396671B1
公开(公告)日：2002-05-28
申请号：US09525670
申请日：2000-03-15
申请人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
发明人： Cheng T. Horng , Mao-Min Chen , Kochan Ju , Min Li , Simon H. Liao , Ku-Ying Tong
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3143 , G11B5/3903 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044
摘要： A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
摘要翻译：自旋阀结构及其制造方法。阀门只能通过感应电流场进行小的偏移点偏移，同时具有良好的GMR特性。这通过在种子层和自由层之间引入约15埃的钌层来实现。这充当有效的偏置控制层，具有提供对传导电子的镜面反射非常有利的界面（对种子和自由层）的附加益处。该钌层的HCP晶体结构也改善了自由层的结晶质量，从而提高了其相对于GMR比的性能。

46. 发明授权

US07072151B2 Magnetic assist read track-width definition for a lead overlay top spin-valve GMR head 失效
公开(公告)号：US07072151B2
公开(公告)日：2006-07-04
申请号：US10782671
申请日：2004-02-19
申请人： Charles C. Lin , Cheng T. Horng , Min Li , Kochan Ju
发明人： Charles C. Lin , Cheng T. Horng , Min Li , Kochan Ju
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

47. 发明授权

US06773515B2 FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures 失效
标题翻译： FeTa纳米氧化物层作为覆盖层，用于增强底部自旋阀结构中的巨磁阻
公开(公告)号：US06773515B2
公开(公告)日：2004-08-10
申请号：US10050644
申请日：2002-01-16
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： C23C800
CPC分类号： C22C38/10 , B32B15/01 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C22C38/12 , G01R33/093 , G11B5/3163 , G11B5/3903 , H01F10/3259 , H01F10/3272 , H01F41/302 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
摘要翻译：一种用于形成具有合成反铁磁钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件的方法和包括单个镜面反射纳米氧化物层（NOL）或包含非金属的双层的双层的覆盖层层和镜面反射纳米氧化物层和如此形成的传感器元件。制造这些传感器元件的方法提供了具有比现有技术的元件更高的GMR比和较低电阻的元件。

48. 发明授权

US06581272B1 Method for forming a bottom spin valve magnetoresistive sensor element 失效
标题翻译：形成底部自旋阀磁阻传感器元件的方法
公开(公告)号：US06581272B1
公开(公告)日：2003-06-24
申请号：US10037812
申请日：2002-01-04
申请人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
发明人： Min Li , Simon H. Liao , Masashi Sano , Kiyoshi Noguchi , Kochan Ju , Cheng T. Horng
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , Y10T29/49034 , Y10T29/49044 , Y10T29/49046
摘要： A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要翻译：一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。

49. 发明授权

US06307721B1 Thin read gap magnetoresistive (MR) sensor element and method for fabrication thereof 有权
标题翻译：薄读磁隙（MR）传感元件及其制造方法
公开(公告)号：US06307721B1
公开(公告)日：2001-10-23
申请号：US09148558
申请日：1998-09-04
申请人： Mao-Min Chen , Cherng-Chyi Han , Cheng T. Horng
发明人： Mao-Min Chen , Cherng-Chyi Han , Cheng T. Horng
IPC分类号： G11B539
CPC分类号： G11B5/3954 , G11B5/3903
摘要： A magnetoresistive (MR) sensor element and a method for fabricating the magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a first shield layer. There is then formed upon the first shield layer a first dielectric spacer layer. There is then formed upon the first dielectric spacer layer a patterned magnetoresistive (MR) layer. There is then formed adjacent to and electrically communicating with a pair of opposite ends of the patterned magnetoresistive (MR) layer a pair of patterned conductor lead layers to define a trackwidth of the patterned magnetoresistive (MR) layer. There is then formed upon the pair of patterned conductor lead layers and upon the patterned magnetoresistive (MR) layer at the trackwidth of the patterned magnetoresistive (MR) layer a blanket second dielectric spacer layer. Finally, there is then formed upon the blanket second dielectric spacer layer a second shield layer, where a first thickness of the blanket second dielectric spacer layer separating a patterned conductor lead layer within the pair of patterned conductor lead layers from the second shield layer is greater than a second thickness of the blanket second dielectric spacer layer separating the patterned magnetoresistive (MR) layer from the second shield layer within the trackwidth of the patterned magnetoresistive (MR) layer. The method contemplates a magnetoresistive (MR) sensor element fabricated in accord with the method.
摘要翻译：磁阻（MR）传感器元件和制造磁阻（MR）传感器元件的方法。首先提供基板。然后在衬底上形成第一屏蔽层。然后在第一屏蔽层上形成第一电介质隔离层。然后在第一电介质隔离层上形成图案化磁阻（MR）层。然后形成为与图案化磁阻（MR）层的一对相对端相邻并与其电连通一对图案化的导体引线层，以限定图案化磁阻（MR）层的轨道宽度。然后形成在一对图案化导体引线层上，并且在图案化磁阻（MR）层的轨道宽度处的图案化磁阻（MR）层上形成毯式第二介电隔离层。最后，然后在第二绝缘间隔层上形成第二屏蔽层，其中第一厚度的第二绝缘隔离层将第一屏蔽层内的图案化导体引线层中的图案化导体引线层分离，比在图案化磁阻（MR）层的轨道宽度内将图案化磁阻（MR）层与第二屏蔽层分离的第二厚度的第二介电隔离层的厚度。该方法考虑了根据该方法制造的磁阻（MR）传感器元件。

50. 发明授权

US07016165B2 Abutted junction GMR read head with an improved hard bias layer and a method for its fabrication 失效
标题翻译：基极GMR读头具有改进的硬偏置层及其制造方法
公开(公告)号：US07016165B2
公开(公告)日：2006-03-21
申请号：US09822491
申请日：2001-04-02
申请人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
发明人： Chen-Jung Chien , Chyu-Jiuh Torng , Cherng-Chyi Han , Cheng T. Horng , Mao-Min Chen
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49032
摘要： A method for forming a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region and a spin-valve type abutted junction GMR sensor element with a thinner hard magnetic longitudinal bias layer having significantly improved magnetic properties in the junction region fabricated according to that method.
摘要翻译：用于形成具有较薄的硬磁纵向偏置层的自旋阀型抵接接头GMR传感器元件的方法，其具有在接合区域中显着改善的磁性能和具有较薄硬磁纵向偏置层的自旋阀型邻接结GMR传感器元件在根据该方法制造的接合区域中具有显着改善的磁性能。

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