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41. 发明申请

US20110095742A1 Power Converter with Controller Operable in Selected Modes of Operation 有权
公开(公告)号：US20110095742A1
公开(公告)日：2011-04-28
申请号：US12939547
申请日：2010-11-04
申请人： Douglas Dean Lopata , Ashraf W. Lotfi
发明人： Douglas Dean Lopata , Ashraf W. Lotfi
IPC分类号： G05F1/618
CPC分类号： H02M3/1588 , H02M2001/0032 , H02M2001/0048 , Y02B70/1466 , Y02B70/1491 , Y02B70/16
摘要： A power converter and method of controlling the same for selected modes of operation. In one embodiment, the power converter includes a first power switch coupled to a source of electrical power and a second power switch coupled to the first power switch and to an output terminal of the power converter. The power converter also includes a controller configured to control an operation of the first and second power switches during selected modes of operation.

42. 发明申请

US20100212150A1 Module Having a Stacked Magnetic Device and Semiconductor Device and Method of Forming the Same 有权
标题翻译：具有堆叠磁性器件和半导体器件的模块及其形成方法
公开(公告)号：US20100212150A1
公开(公告)日：2010-08-26
申请号：US12393835
申请日：2009-02-26
申请人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
发明人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
IPC分类号： H05K3/30
CPC分类号： H05K1/165 , H01L23/495 , H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2224/85399 , H01L2924/00011 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H05K1/181 , H05K3/284 , H05K2201/086 , H05K2201/10515 , H05K2203/049 , Y10T29/49128 , Y10T29/4913 , Y10T29/49146 , Y10T29/49155 , H01L2924/00 , H01L2924/00012
摘要： A module having a stacked magnetic device and semiconductor device, and method of forming the same. In one embodiment, the module includes a printed wiring board including a patterned conductor formed on an upper surface thereof. The module also includes a magnetic core mounted on the upper surface of the printed wiring board proximate the patterned conductor and a semiconductor device mounted on an upper surface of the magnetic core.
摘要翻译：具有层叠磁性器件和半导体器件的模块及其形成方法。在一个实施例中，模块包括印刷线路板，其包括形成在其上表面上的图案化导体。该模块还包括安装在印刷电路板的靠近图案化导体的上表面上的磁芯和安装在磁芯的上表面上的半导体器件。

43. 发明授权

US07544995B2 Power converter employing a micromagnetic device 有权
标题翻译：功率转换器采用微电磁装置
公开(公告)号：US07544995B2
公开(公告)日：2009-06-09
申请号：US11852692
申请日：2007-09-10
申请人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas , Amrit Panda
发明人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas , Amrit Panda
IPC分类号： H01L29/76 , H01L31/062
CPC分类号： H02M7/003 , H01F17/0033 , H01F41/046
摘要： A power converter including a power train, a controller and a driver. In one embodiment, the power train includes a switch that conducts for a duty cycle and provides a regulated output characteristic for the power converter, and a micromagnetic device. The micromagnetic device includes a first conductive winding layer selectively formed above a first seed layer, and first and second magnetic core layers formed thereabove. The micromagnetic device also includes a second seed layer formed above the second magnetic core layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device. The controller provides a signal to control the duty cycle of the switch, and the driver provides a drive signal to the switch as a function of the signal from the controller.
摘要翻译：一种功率转换器，包括传动系，控制器和驱动器。在一个实施例中，动力传动系包括开关，用于占空比传导并为功率转换器提供稳定的输出特性，以及微型磁性装置。该微电磁装置包括选择性地形成在第一种子层上的第一导电绕组层，以及在其上形成的第一和第二磁芯层。微型磁性装置还包括形成在第二磁芯层上方的第二种子层，以及形成在第二籽晶层之上和第二导电绕组层的通孔中的第二导电绕组层。第一和第二导电绕组层形成用于微磁装置的绕组。控制器提供一个信号来控制开关的占空比，驱动器根据来自控制器的信号向开关提供驱动信号。

44. 发明授权

US06369408B1 GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same 有权
标题翻译：具有低电容和导通电阻的GaAs MOSFET及其制造方法
公开(公告)号：US06369408B1
公开(公告)日：2002-04-09
申请号：US09412847
申请日：1999-10-06
申请人： Ashraf W. Lotfi , Jian Tan
发明人： Ashraf W. Lotfi , Jian Tan
IPC分类号： H01L2978
CPC分类号： H01L29/66522 , H01L29/20 , H01L29/7835
摘要： A metal-oxide semiconductor field effect transistor (MOSFET), a method of manufacturing the MOSFET and a power supply incorporating at least one such MOSFET. In one embodiment, the MOSFET includes: (1) a substrate having an epitaxial layer underlying a gate oxide layer, a portion of the epitaxial layer being a gate region of the MOSFET, (2) an N-type drift region located in the epitaxial layer laterally proximate the gate region and (3) source and drain regions located in the epitaxial layer and laterally straddling the gate and drift regions.
摘要翻译：一种金属氧化物半导体场效应晶体管（MOSFET），一种制造该MOSFET的方法以及至少包括一个这样的MOSFET的电源。在一个实施例中，MOSFET包括：（1）具有在栅氧化层下面的外延层的衬底，外延层的一部分是MOSFET的栅极区，（2）位于外延中的N型漂移区（3）位于外延层中并横向跨越栅极和漂移区域的源极和漏极区域。

45. 发明申请

US20120306011A1 Integrated Circuit With A Laterally Diffused Metal Oxide Semiconductor Device And Method Of Forming The Same 有权
标题翻译：具有侧向扩散金属氧化物半导体器件的集成电路及其形成方法
公开(公告)号：US20120306011A1
公开(公告)日：2012-12-06
申请号：US13586722
申请日：2012-08-15
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L29/78
CPC分类号： H01L29/7816 , H01L21/28518 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
摘要翻译：具有晶体管的集成电路有利地体现在横向扩散的金属氧化物半导体器件中，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，晶体管包括源极/漏极，源极/漏极包括与沟道区相邻的轻掺杂或重掺杂区，以及在沟道区下方延伸的相对掺杂阱以及源极/漏极的轻掺杂或重掺杂区的一部分。晶体管还包括在沟道区域下面的相对掺杂的阱内的沟道延伸，并且在源极/漏极的轻掺杂或重掺杂区域的一部分之下延伸。

46. 发明授权

US08253195B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
公开(公告)号：US08253195B2
公开(公告)日：2012-08-28
申请号：US12550002
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L27/0922 , H01L21/28518 , H01L21/761 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.

47. 发明授权

US08212317B2 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same 有权
标题翻译：具有横向扩散的金属氧化物半导体器件的集成电路及其形成方法
公开(公告)号：US08212317B2
公开(公告)日：2012-07-03
申请号：US12549944
申请日：2009-08-28
申请人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
发明人： Ashraf W. Lotfi , William W. Troutman , Douglas Dean Lopata , Tanya Nigam
IPC分类号： H01L21/00
CPC分类号： H01L21/823814 , H01L21/28518 , H01L21/761 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/665 , H01L2224/13 , H01L2924/13091 , H01L2924/00
摘要： An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
摘要翻译：具有晶体管的集成电路有利地体现在横向扩散的金属氧化物半导体器件中，其具有位于凹入半导体衬底的沟道区域上方的栅极及其形成方法。在一个实施例中，晶体管包括源极/漏极，源极/漏极包括与沟道区相邻的轻掺杂或重掺杂区，以及在沟道区下方延伸的相对掺杂阱以及源极/漏极的轻或重掺杂区的一部分。晶体管还包括在沟道区域下面的相对掺杂的阱内的沟道延伸，并且在源极/漏极的轻掺杂或重掺杂区域的一部分之下延伸。

48. 发明授权

US08153473B2 Module having a stacked passive element and method of forming the same 有权
标题翻译：具有堆叠无源元件的模块及其形成方法
公开(公告)号：US08153473B2
公开(公告)日：2012-04-10
申请号：US12244672
申请日：2008-10-02
申请人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
发明人： Ashraf W. Lotfi , Douglas Dean Lopata , John David Weld , Mathew A. Wilkowski
IPC分类号： H01L21/00
CPC分类号： H01L23/645 , H01L23/3107 , H01L23/49541 , H01L23/49589 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2224/05554 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/49113 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19103 , H01L2924/00 , H01L2224/45147 , H01L2924/00015 , H01L2224/05599 , H01L2924/00012
摘要： A module having a discrete passive element and a semiconductor device, and method of forming the same. In one embodiment, the module includes a patterned leadframe, a discrete passive element mounted on an upper surface of the leadframe, and a thermally conductive, electrically insulating material formed on an upper surface of the discrete passive element. The module also includes a semiconductor device bonded to an upper surface of the thermally conductive, electrically insulating material.
摘要翻译：具有分立无源元件和半导体器件的模块及其形成方法。在一个实施例中，模块包括图案化引线框架，安装在引线框架的上表面上的分立无源元件以及形成在分立无源元件的上表面上的导热电绝缘材料。该模块还包括结合到导热电绝缘材料的上表面的半导体器件。

49. 发明授权

US08133529B2 Method of forming a micromagnetic device 有权
标题翻译：形成微磁装置的方法
公开(公告)号：US08133529B2
公开(公告)日：2012-03-13
申请号：US11852698
申请日：2007-09-10
申请人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
发明人： Ashraf W. Lotfi , Trifon M. Liakopoulos , Robert W. Filas
IPC分类号： B05D5/00
CPC分类号： H01F10/132 , H01F1/15333 , H01F10/265 , H01F17/0033 , H01F41/046 , H01L28/10
摘要： A method of forming a micromagnetic device including providing a substrate and forming a magnetic core layer over the substrate from a magnetic alloy. The magnetic alloy includes iron, cobalt and phosphorous. A content of the cobalt is in a range of 1.8 to 4.5 atomic percent. A content of the phosphorus is in a range of 20.1 to 30 atomic percent. A content of the iron is substantially a remaining proportion of the magnetic alloy.
摘要翻译：一种形成微磁性器件的方法，包括提供衬底并从磁性合金在衬底上形成磁芯层。磁性合金包括铁，钴和磷。钴的含量在1.8〜4.5原子％的范围内。磷的含量为20.1〜30原子％。铁的含量基本上是磁性合金的剩余比例。

50. 发明申请

US20110316501A1 Controller for a Power Converter and Method of Operating the Same 有权
标题翻译：电源转换器控制器及其操作方法
公开(公告)号：US20110316501A1
公开(公告)日：2011-12-29
申请号：US13224620
申请日：2011-09-02
申请人： Pedro Alou Cervera , Jose Antonio Cobos Marquez , Ashraf W. Lotfi , Andres Soto del Pecho
发明人： Pedro Alou Cervera , Jose Antonio Cobos Marquez , Ashraf W. Lotfi , Andres Soto del Pecho
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , H02M3/157 , H02M2001/0012
摘要： A controller for use with a power converter including a switch configured to conduct to provide a regulated output characteristic at an output of the power converter, and method of operating the same. In one embodiment, the controller includes a linear control circuit, coupled to the output, configured to provide a first control signal for the switch as a function of the output characteristic. The controller also includes a nonlinear control circuit, coupled to the output, configured to provide a second control signal for the switch as a function of the output characteristic. The controller is configured to select one of the first and second control signals for the switch in response to a change in an operating condition of the power converter.
摘要翻译：一种与功率转换器一起使用的控制器，包括被配置为在功率转换器的输出端提供稳定输出特性的开关，以及其操作方法。在一个实施例中，控制器包括耦合到输出的线性控制电路，其被配置为根据输出特性为开关提供第一控制信号。控制器还包括耦合到输出的非线性控制电路，其被配置为根据输出特性为开关提供第二控制信号。控制器被配置为响应于功率转换器的操作状态的变化来选择用于开关的第一和第二控制信号中的一个。

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