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    • 42. 发明申请
    • Magnetic shield member, magnetic shield structure, and magnetic memory device
    • 磁屏蔽构件,磁屏蔽结构和磁存储装置
    • US20050230788A1
    • 2005-10-20
    • US11053650
    • 2005-02-08
    • Yoshihiro KatoYoshinori ItoTatsushiro HirataKatsumi OkayamaKaoru Kobayashi
    • Yoshihiro KatoYoshinori ItoTatsushiro HirataKatsumi OkayamaKaoru Kobayashi
    • H01L23/00G11C11/16H01L21/8246H01L23/552H01L27/105
    • H01L23/552G11C11/16H01L2924/0002H01L2924/00
    • It is an object of the invention to relax magnetic saturation and realize a high-performance magnetic shield effect that is suitable for magnetic devices such as an MRAM. A magnetic shield member of the invention is suitable for a magnetic memory device in which a magnetic random access memory (MRAM) consisting of a TMR element formed by stacking a magnetization fixed layer with a direction of magnetization fixed and a magnetic layer, in which a direction of magnetization can be changed, via a tunnel barrier layer is sealed by a sealing material such as resin. A planar shape or a sectional shape of magnetic shield plates provided on the sealing material in order to magnetically shield the MRAM is a shape in which a side substantially perpendicular to a direction of an outer magnetic field and a side substantially parallel to the direction of an outer magnetic field are not orthogonal to each other, in particular, circular, polygonal, or the like, whereby it is possible to relax magnetic saturation of the magnetic shield plate and keep the magnetic shield effect.
    • 本发明的目的是松弛磁饱和,实现适用于MRAM等磁性装置的高性能磁屏蔽效果。 本发明的磁屏蔽部件适用于磁性随机存取存储器(MRAM),其中磁性随机存取存储器(MRAM)由通过堆积固定磁化方向的磁化固定层形成的TMR元件和磁性层组成,其中, 磁化方向可以改变,通过隧道阻挡层被树脂等密封材料密封。 设置在密封材料上以磁屏蔽MRAM的磁屏蔽板的平面形状或截面形状是这样的形状,其中,基本上垂直于外部磁场的方向的侧和基本上平行于 外部磁场彼此不正交,特别是圆形,多边形等,从而可以缓和磁屏蔽板的磁饱和并保持磁屏蔽效果。