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    • 46. 发明授权
    • Method for forming a pattern on a substrate and electronic device formed thereby
    • 在基板上形成图案的方法和由此形成的电子器件
    • US08343779B2
    • 2013-01-01
    • US12594352
    • 2008-04-10
    • Lukas BürgiReto PfeifferHarald WalterAdrian Von Mühlenen
    • Lukas BürgiReto PfeifferHarald WalterAdrian Von Mühlenen
    • H01L21/00
    • H01L21/0272H01L21/0274H01L21/0335H01L51/0018H01L51/0037H01L51/0097H01L51/0512Y02E10/549
    • The invention relates to a method for forming a pattern on a substrate (S) with an upper surface and a lower surface which comprises the steps of depositing a first layer (E1) of an opaque material on the upper surface of the substrate (S), depositing a photosensitive layer (R) such that part of the photosensitive layer (R) covers at least part of the first layer (E1), exposing the photosensitive layer (R) to a light beam (L), the light beam (L) impinging on the lower surface of the substrate (S) under an oblique angle (Φ) of incidence, removing the exposed region of the photosensitive layer (R), depositing a second layer (E2) of an opaque material such that part of the second layer (E2) covers a remaining region of the photosensitive layer (R), and removing at least a part of the remaining region of the photosensitive layer (R). According to another aspect of the method of the invention anisotropic plasma etching is applied from above the upper surface of the substrate (S) after removal of the exposed region of the photosensitive layer (R) and thereafter the second layer (E2) is deposited. The method of the invention can be applied for forming a source electrode and a drain electrode of a thin-film field effect transistor. The invention furthermore relates to an electronic device fabricated by such a method.
    • 本发明涉及一种在具有上表面和下表面的基板(S)上形成图案的方法,其包括以下步骤:在基板(S)的上表面上沉积不透明材料的第一层(E1) ,使感光层(R)的一部分覆盖第一层(E1)的至少一部分,使感光层(R)暴露于光束(L),将光束(L) )以倾斜角(Φ)入射在衬底(S)的下表面上,去除感光层(R)的暴露区域,沉积不透明材料的第二层(E2),使得部分 第二层(E2)覆盖感光层(R)的剩余区域,并且去除感光层(R)的剩余区域的至少一部分。 根据本发明方法的另一方面,在去除感光层(R)的曝光区域之后,从衬底(S)的上表面上方施加各向异性等离子体蚀刻,然后沉积第二层(E2)。 本发明的方法可用于形成薄膜场效应晶体管的源电极和漏电极。 本发明还涉及通过这种方法制造的电子装置。