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    • 41. 发明申请
    • BASE STATION APPARATUS
    • 基站装置
    • US20120170545A1
    • 2012-07-05
    • US13496233
    • 2010-11-08
    • Takashi Yamamoto
    • Takashi Yamamoto
    • H04W72/04H04W56/00H04W24/00
    • H04W72/08H04W56/002H04W88/08H04W92/20
    • Basic units (resource blocks) of resource allocation that can be used in a communication area of a base station apparatus are determined without obtaining resource allocation information. To do so, a base station apparatus includes an RF unit 4 that receives a communication signal between another base station apparatus and a terminal apparatus wirelessly connected to the another base station apparatus; a synchronization processing unit 5b that performs a process for synchronizing with the another base station apparatus; and a measurement processing unit 5d that determines power in each resource block of the communication signal received by the RF unit 4 and determines, based on the power, whether the resource block can be used in a communication area of the base station apparatus.
    • 确定可以在基站装置的通信区域中使用的资源分配的基本单元(资源块),而不获取资源分配信息。 为此,基站装置包括:RF单元4,其接收另一基站装置与无线连接到另一基站装置的终端装置之间的通信信号; 同步处理单元5b,执行与另一基站装置同步的处理; 以及测量处理单元5d,其确定由RF单元4接收的通信信号的每个资源块中的功率,并且基于该功率确定是否可以在基站设备的通信区域中使用资源块。
    • 47. 发明申请
    • Plasma Etching Apparatus
    • 等离子蚀刻装置
    • US20110303365A1
    • 2011-12-15
    • US13203191
    • 2010-07-16
    • Takashi YamamotoNaoya Ikemoto
    • Takashi YamamotoNaoya Ikemoto
    • C23F1/08H05H1/24
    • H01J37/32422H01J37/321H01J37/32357
    • The present invention relates to a plasma etching apparatus capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate. A plasma etching apparatus 1 has a processing chamber 11 in which the outer diameter of an upper chamber 12 is formed smaller than a lower chamber 13 and the upper chamber 12 is provided at the central portion of the top surface of the lower chamber 13, a grounded plate-shaped member 14 which is provided on the ceiling of the lower chamber 13 to divide the inner space of the processing chamber 11 and which has a plurality of through holes 14a penetrating from the top surface to the bottom surface thereof, a platen 16 which is disposed in the lower chamber 13 and on which a substrate K is placed, a gas supply device 20 for supplying an etching gas into the upper chamber 12, plasma generating devices 26, 29 for exciting etching gases in the upper chamber 12 and in the lower chamber 13 into a plasma, respectively, an exhaust device 35 for reducing the pressure within the processing chamber 11, and an RF power supply unit 32 for supplying RF power to the platen 16.
    • 本发明涉及能够均匀地蚀刻基板的整个表面的等离子体蚀刻装置,而与基板的种类无关。 等离子体蚀刻装置1具有处理室11,其中上室12的外径形成为小于下室13,上室12设置在下室13的顶表面的中心部分, 设置在下室13的天花板上以分隔处理室11的内部空间并且具有从顶表面贯穿其底表面的多个通孔14a的接地板状构件14,压板16 其设置在下室13中并且其上放置有基板K的气体供应装置20,用于将蚀刻气体供应到上室12中,等离子体产生装置26,29用于激发上室12中的蚀刻气体 下室13分别成为等离子体,用于减小处理室11内的压力的排气装置35和用于向压板16提供RF功率的RF电源单元32。