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41. 发明授权

US07535313B2 Balun 失效
标题翻译：巴伦
公开(公告)号：US07535313B2
公开(公告)日：2009-05-19
申请号：US11656981
申请日：2007-01-24
申请人： Chul-soo Kim , Dal Ahn , Kwi-soo Kim , In-sang Song , Yun-kwon Park , Kuang-woo Nam
发明人： Chul-soo Kim , Dal Ahn , Kwi-soo Kim , In-sang Song , Yun-kwon Park , Kuang-woo Nam
IPC分类号： H03H5/00
CPC分类号： H03H7/422 , H01P5/10 , H03H2001/0085
摘要： A balun includes an input line for receiving an unbalanced signal, an output line for receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground. The input line and the output line are formed in the same layer, and the ground is formed in a different layer from the input line and the output line. The ground has an opening so as to generate a potential difference between the first output line and the second output line. The ground is electrically connected to the input line.
摘要翻译：平衡 - 不平衡转换器包括用于接收不平衡信号的输入线，用于从输入线接收不平衡信号并输出平衡信号的输出线和接地。输入线和输出线形成在相同的层中，并且地面形成在与输入线和输出线不同的层中。地面具有开口，以产生第一输出线和第二输出线之间的电位差。接地电连接到输入线。

42. 发明申请

US20090114513A1 MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH 审中-公开
标题翻译：微机电系统（MEMS）开关
公开(公告)号：US20090114513A1
公开(公告)日：2009-05-07
申请号：US12102442
申请日：2008-04-14
申请人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
发明人： Chul-soo Kim , Byeoung-ju Ha , In-sang Song , Duck-hwan Kim , Yun-kwon Park , Jea-shik Shin
IPC分类号： H01H57/00
CPC分类号： H01H59/0009 , H01H2059/0027
摘要： A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.
摘要翻译：提供微机电系统（MEMS）开关。 MEMS开关包括接地，可根据驱动信号移动的移动单元，用于将输入连接到输出或从输出端断开输入;以及电极单元，其布置成形成在圆的一部分上的突起的构造以引起在输入和输出之间产生的泄漏信号朝向地面移动。

43. 发明授权

US07471167B2 Balun 有权
标题翻译：巴伦
公开(公告)号：US07471167B2
公开(公告)日：2008-12-30
申请号：US11638507
申请日：2006-12-14
申请人： Chul-soo Kim , Dal Ahn , Kwi-soo Kim , In-sang Song , Yun-kwon Park , Seok-chul Yun , Kuang-woo Nam
发明人： Chul-soo Kim , Dal Ahn , Kwi-soo Kim , In-sang Song , Yun-kwon Park , Seok-chul Yun , Kuang-woo Nam
IPC分类号： H01P5/10 , H03H7/42 , H01P3/08
CPC分类号： H01P5/10
摘要： A balun capable of a reduced whole size. The balun includes an input line receiving an unbalanced signal, an output line receiving the unbalanced signal from the input line and outputting a balanced signal, and a ground part. The input and output lines are formed on a layer, and the ground part is formed on a different layer from the layer. The ground part includes an opening and is electrically connected to the input line, and a portion of the ground part is removed to form the opening so that a potential difference occurs between first and second output lines. Thus, although a length of the output line is less than ¼ of an input wavelength λ, a difference between phases of first and second output signals can be about 180°. As a result, the whole size of the balun can be reduced.
摘要翻译：平衡 - 不平衡转换器能够减小整体尺寸。平衡 - 不平衡转换器包括接收不平衡信号的输入线，输入线接收来自输入线的不平衡信号并输出平衡信号的输出线和接地部分。输入和输出线形成在层上，并且接地部分形成在与该层不同的层上。接地部分包括开口并且电连接到输入线，并且去除接地部分的一部分以形成开口，使得在第一和第二输出线之间产生电位差。因此，尽管输出线的长度小于输入波长λ的1/4，但是第一和第二输出信号的相位差可以是大约180°。结果，平衡不平衡变换器的整体尺寸可以减小。

44. 发明授权

US07432785B2 Thin film resonator, method for making thin film resonator and filter having thin film resonators 有权
标题翻译：薄膜谐振器，制造薄膜谐振器的方法和具有薄膜谐振器的滤波器
公开(公告)号：US07432785B2
公开(公告)日：2008-10-07
申请号：US10936522
申请日：2004-09-09
申请人： Yong-seop Yoon , Yun-kwon Park , Hyung Choi
发明人： Yong-seop Yoon , Yun-kwon Park , Hyung Choi
IPC分类号： H03H9/00 , H03H9/09 , H03H9/54
CPC分类号： H03H9/173 , H03H3/04 , H03H2003/021
摘要： A thin film resonator having a membrane layer formed on top of a substrate, a lower electrode formed on part of the top surface of the membrane layer, a piezoelectric layer formed on top of the lower electrode, an upper electrode formed on top of the piezoelectric layer, and a mass loading layer interposed between the lower electrode and the membrane layer and having a predetermined mass. This structure enables precise adjustment of the resonant frequency of the thin film resonator, thereby providing a more precise filter.
摘要翻译：一种薄膜谐振器，其具有形成在基板顶部的膜层，形成在所述膜层的上表面的一部分上的下电极，形成在所述下电极的顶部上的压电层，形成在所述压电体的顶部的上电极层和介于下电极和膜层之间并具有预定质量的质量加载层。这种结构能够精确地调整薄膜谐振器的谐振频率，从而提供更精确的滤波器。

45. 发明申请

US20080024242A1 Phase shifter, method of fabricating the same, and duplexer having the same 有权
标题翻译：移相器及其制造方法，以及具有该移相器的双工器
公开(公告)号：US20080024242A1
公开(公告)日：2008-01-31
申请号：US11644910
申请日：2006-12-26
申请人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
发明人： Kuang-woo Nam , In-sang Song , Chul-soo Kim , Yun-kwon Park
IPC分类号： H03H7/46
CPC分类号： H03H7/463 , H03H7/18
摘要： A phase shifter fabricated by a simple process and having a simple structure, a method of fabricating the same, and a duplexer having the same are disclosed. The duplexer includes a transmitting-end filter capable of passing only a signal in the range of a transmission frequency, a receiving-end filter capable of passing only a signal in the range of a reception frequency, and a phase shifter interposed between the transmitting-end filter and the receiving-end filter to isolate a transmitted signal of the transmitting-end filter and a received signal of the receiving-end filter from each other. The phase shifter includes a substrate provided with an input port and an output port, an inductor formed on the substrate and connected to the input and output ports, and a capacitor provided on the substrate, wherein the capacitor and inductor share a region of the substrate.
摘要翻译：公开了一种通过简单工艺制造并具有简单结构的移相器，其制造方法和具有该相移器的双工器。双工器包括能够仅通过传输频率范围内的信号的发送端滤波器，仅能够接收接收频率范围内的信号的接收端滤波器和插入在发送频率范围之间的移相器，端接滤波器和接收端滤波器，以将发送端滤波器的发送信号和接收端滤波器的接收信号彼此隔离。移相器包括设置有输入端口和输出端口的基板，形成在基板上并连接到输入和输出端口的电感器和设置在基板上的电容器，其中电容器和电感器共享基板的区域。

46. 发明申请

US20070188049A1 Monolithic RF circuit and method of fabricating the same 审中-公开
标题翻译：单片RF电路及其制造方法
公开(公告)号：US20070188049A1
公开(公告)日：2007-08-16
申请号：US11649824
申请日：2007-01-05
申请人： In-sang Song , Sang-wook Kwon , Chul-soo Kim , Yun-kwon Park
发明人： In-sang Song , Sang-wook Kwon , Chul-soo Kim , Yun-kwon Park
IPC分类号： H01L41/00
CPC分类号： H03H3/02 , H03H9/0542 , H03H9/173
摘要： A monolithic radio frequency (RF) circuit and a method of fabricating the monolithic RF circuit are provided. The monolithic RF circuit includes: a base substrate; a filter part including first and second support layers formed on the base substrate, a first air gap formed between the first and second support layers, a first electrode formed on the second support layer and the first air gap, a first piezoelectric layer formed on the first support layer and the first electrode, and a second electrode formed on the first piezoelectric layer; and a switch part including a third support layer adjacent to the second support layer, a second air gap formed between the second and third support layers, a first switch electrode formed on the second air gap and the third support layer, and a second piezoelectric layer formed on the first switch electrode.
摘要翻译：提供单片射频（RF）电路和制造单片RF电路的方法。单片RF电路包括：基底; 过滤器部分，包括形成在基底基板上的第一和第二支撑层，形成在第一和第二支撑层之间的第一气隙，形成在第二支撑层和第一气隙上的第一电极，形成在第一和第二支撑层上的第一压电层第一支撑层和第一电极，以及形成在第一压电层上的第二电极; 以及开关部分，包括与第二支撑层相邻的第三支撑层，形成在第二和第三支撑层之间的第二气隙，形成在第二气隙和第三支撑层上的第一开关电极和第二压电层形成在第一开关电极上。

47. 发明授权

US07253704B2 RF duplexer 有权
标题翻译：射频双工器
公开(公告)号：US07253704B2
公开(公告)日：2007-08-07
申请号：US10996045
申请日：2004-11-24
申请人： Yun-kwon Park , Jong-seok Kim , In-sang Song , Duck-hwan Kim
发明人： Yun-kwon Park , Jong-seok Kim , In-sang Song , Duck-hwan Kim
IPC分类号： H03H9/70 , H03H3/007
CPC分类号： H03H9/706 , H03H9/0571
摘要： A compact and high-performance RF duplexer and fabrication method thereof, the RF duplexer includes a first filter and a second filter suspended over the substrate connected in series and in parallel and having a plurality of resonators, for passing signals of different frequency bands. A plurality of inductors are connected in series with the parallel resonators of the first and second filters and formed on the substrate. A phase shifter is formed on the substrate for preventing a signal interference between the first and second filters, and a supporter supports the first and second filters and has a plurality of bumps at certain parts on the substrate to electrically connect terminals of the first and second filter with terminals of the substrate. Accordingly, the size of the duplexer is reduced by forming the tuning inductors around the bumps of the PCB.
摘要翻译：一种紧凑且高性能的RF双工器及其制造方法，RF双工器包括悬挂在基板上串联并联并具有多个谐振器的第一滤波器和第二滤波器，用于传递不同频带的信号。多个电感器与第一和第二滤波器的并联谐振器串联连接，并形成在基板上。在基板上形成有用于防止第一和第二滤光器之间的信号干涉的移相器，并且支撑件支撑第一和第二滤光器，并且在基板上的某些部分具有多个凸块以电连接第一和第二滤光器的端子过滤器与基板的端子。因此，通过在PCB的凸块周围形成调谐电感来减小双工器的尺寸。

48. 发明授权

US07253703B2 Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same 有权
标题翻译：气隙型FBAR，其制造方法，以及使用该FBAR的过滤器和双工器
公开(公告)号：US07253703B2
公开(公告)日：2007-08-07
申请号：US10959313
申请日：2004-10-07
申请人： In-sang Song , Yun-kwon Park , Byeoung-ju Ha , Jun-sik Hwang
发明人： In-sang Song , Yun-kwon Park , Byeoung-ju Ha , Jun-sik Hwang
IPC分类号： H03H9/54 , H03H9/70 , H03H9/10 , H03H9/15 , H03H3/02
CPC分类号： H03H9/587 , H03H3/02 , H03H9/105 , H03H9/173 , Y10T29/42
摘要： An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film; a stacked resonance part including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film.
摘要翻译：气隙式薄膜体声波谐振器（FBAR）及其制造方法。还公开了采用气隙型FBAR的过滤器和双工器。气隙式FBAR包括：第一基板，其上表面上的预定区域具有空腔部分; 电介质膜，其堆叠在所述第一基板的上部; 在所述第一基板和所述电介质膜之间形成的第一气隙; 堆叠的共振部分，包括形成在电介质膜的上部的下电极/压电层/上电极; 第二基板，在其下表面上的预定区域具有空腔部分，并且与第一基板接合; 以及在所述层叠的共振部和所述第二基板之间形成的第二气隙。可以使用由液晶聚合物（LCP）制成的预定厚度的薄膜作为电介质膜。

49. 发明申请

US20070012654A1 MEMS switch and method for manufacturing the same 失效
标题翻译： MEMS开关及其制造方法
公开(公告)号：US20070012654A1
公开(公告)日：2007-01-18
申请号：US11472312
申请日：2006-06-22
申请人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
发明人： Jong-seok Kim , In-sang Song , Sang-hun Lee , Sang-wook Kwon , Duck-hwan Kim , Yun-kwon Park , Hee-moon Jeong , Young-tack Hong , Che-heung Kim , Seok-chul Yun , Kuang-woo Nam
IPC分类号： C23F1/00 , H01B13/00
CPC分类号： H01H61/02 , H01H61/063 , H01H2061/006
摘要： A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要翻译： MEMS开关包括在下基板的上表面上具有信号线的下基板; 在其上具有空腔的上基板，与下基板的上表面隔开一段距离，并且在上基板的下表面上具有膜层; 形成在膜层上的上基板的空腔中的双金属层; 形成在所述膜层的下表面上的加热层; 以及形成在所述加热层的下表面上的接触构件。接触构件可以与信号线接触或分离。制造MEMS开关的方法包括制备上基板和下基板并将其组合，使得具有信号线的表面面向具有接触构件的表面，并且上下基板分开一定距离。

50. 发明申请

US20060180897A1 Silicon-based RF system and method of manufacturing the same 有权
标题翻译：硅基RF系统及其制造方法
公开(公告)号：US20060180897A1
公开(公告)日：2006-08-17
申请号：US11342564
申请日：2006-01-31
申请人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
发明人： Yun-kwon Park , Sang-wook Kwon , Duck-hwan Kim , Jong-seok Kim , Sung-hoon Choa , In-sang Song
IPC分类号： H01L29/06 , H01L21/30
CPC分类号： H01L25/165 , H01L2924/0002 , H01L2924/09701 , H03H9/1057 , H01L2924/00
摘要： A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要翻译：一种RF系统，包括形成有填充有导电材料的至少一个通孔的硅衬底，使得硅衬底的两侧彼此电连接; 形成在所述硅衬底的一侧上的至少一个平面器件; 以及形成在硅衬底的另一侧上的至少一个RF MEMS器件。

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