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41. 发明申请

US20070023821A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070023821A1
公开(公告)日：2007-02-01
申请号：US11494439
申请日：2006-07-27
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Sung-Kweon Baek , Young-Jin Noh
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336
摘要： In a semiconductor device and a method of manufacturing the semiconductor device, preliminary isolation regions having protruded upper portions are formed on a substrate to define an active region. After an insulation layer is formed on the active region, a first conductive layer is formed on the insulation layer. The protruded upper portions of the preliminary isolation regions are removed to form isolation regions on the substrate and to expose sidewalls of the first conductive layer, and compensation members are formed on edge portions of the insulation layer. The compensation members may complement the edge portions of the insulation layer that have thicknesses substantially thinner than that of a center portion of the insulation layer, and may prevent deterioration of the insulation layer. Furthermore, the first conductive layer having a width substantially greater than that of the active region may enhance a coupling ratio of the semiconductor device. Thus, the semiconductor device may have improved electrical characteristics and reliability.
摘要翻译：在半导体器件和半导体器件的制造方法中，在衬底上形成具有突出的上部的预备隔离区以限定有源区。在有源区上形成绝缘层之后，在绝缘层上形成第一导电层。去除预分离区域的突出的上部，以在衬底上形成隔离区域并暴露第一导电层的侧壁，并且补偿构件形成在绝缘层的边缘部分上。补偿构件可以补充绝缘层的边缘部分，该边缘部分的厚度基本上比绝缘层的中心部分的厚度更薄，并且可以防止绝缘层的劣化。此外，具有基本上大于有源区的宽度的第一导电层可以增强半导体器件的耦合比。因此，半导体器件可以具有改善的电特性和可靠性。

42. 发明申请

US20060228841A1 Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices 有权
标题翻译：形成薄膜结构的方法，制造使用其的非易失性半导体器件的制造方法以及所得的非易失性半导体器件
公开(公告)号：US20060228841A1
公开(公告)日：2006-10-12
申请号：US11399670
申请日：2006-04-06
申请人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
发明人： Chul-Sung Kim , Yu-Gyun Shin , Bon-Young Koo , Ji-Hyun Kim , Young-Jin Noh
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11568
摘要： In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration process. A lower nitride film is formed between the substrate and the oxide film by nitrifying a lower portion of the oxide film through a thermal nitration process. A damage to the thin-film structure generated in the plasma nitration process may be at least partially cured in the thermal nitration process, and/or may be cured in a post-thermal treatment process.
摘要翻译：在非易失性半导体器件中使用的薄膜结构的形成方法中，在基板上形成氧化膜。通过等离子体硝化工艺对氧化膜的上部进行硝化，在氧化物膜上形成上部氮化物膜。通过热硝化处理使氧化膜的下部硝化，在基板和氧化膜之间形成下部氮化膜。在等离子体硝化过程中产生的薄膜结构的损坏可以在热硝化过程中至少部分地固化，和/或可以在后热处理过程中固化。

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