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    • 48. 发明授权
    • Non-volatile memory device and a method of fabricating the same
    • 非易失性存储器件及其制造方法
    • US07622765B2
    • 2009-11-24
    • US11709057
    • 2007-02-22
    • Won-joo KimYoon-dong ParkJung-hoon Lee
    • Won-joo KimYoon-dong ParkJung-hoon Lee
    • H01L29/788
    • H01L29/7881H01L27/115H01L27/11519H01L29/42332H01L29/792
    • A non-volatile memory device and a method of fabricating the same are provided. A non-volatile memory device may include a semiconductor substrate including a body and at least one pair of fins vertically protruding from the body and spaced apart from each other, and at least one control gate electrode on at least portions of outer side surfaces of the at least one pair of fins and extending onto top portions of the at least one pair of fins on an angle with the at least one pair of fins. The non-volatile memory device may further include at least one pair of gate insulating layers between the at least one control gate electrode and the at least one pair of fins, and at least one pair of storage node layers between the at least one pair of gate insulating layers and at least a portion of the at least one control gate electrode. The at least one control gate electrode may extend onto top portions of the at least one pair of fins in a zigzag fashion.
    • 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括半导体衬底,其包括主体和从主体垂直突出并且彼此间隔开的至少一对鳍,以及至少一个控制栅电极,其位于至少一个的外侧表面的至少部分上 至少一对翅片,并且与所述至少一对翅片成角度地延伸到所述至少一对翅片的顶部上。 非易失性存储器件还可以包括至少一对控制栅电极与至少一对散热片之间的至少一对栅绝缘层,以及至少一对控制栅电极之间的至少一对存储节点层 栅绝缘层和至少一个控制栅电极的至少一部分。 至少一个控制栅极可以以锯齿形的方式延伸到至少一对翅片的顶部。