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41. 发明申请

US20130075843A1 SPIN TRANSISTOR AND MEMORY 有权
标题翻译：旋转晶体管和存储器
公开(公告)号：US20130075843A1
公开(公告)日：2013-03-28
申请号：US13526007
申请日：2012-06-18
申请人： Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L29/66984
摘要： A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.
摘要翻译：根据实施例的自旋晶体管包括：形成在衬底上并用作源极和漏极之一的第一磁性层; 绝缘膜，其具有面向第一磁性层的上表面的下表面，与下表面相对的上表面，以及不同于下表面和上表面的侧面，绝缘膜形成在第一磁性层的上表面上第一磁性层，作为通道; 第二磁性层，形成在绝缘膜的上表面上并用作源极和漏极中的另一个; 沿绝缘膜的侧面形成的栅电极; 以及位于绝缘膜的栅极和侧面之间的栅极绝缘膜。

42. 发明授权

US08385114B2 Nonvolatile memory circuit using spin MOS transistors 有权
标题翻译：使用自旋MOS晶体管的非易失性存储电路
公开(公告)号：US08385114B2
公开(公告)日：2013-02-26
申请号：US13360904
申请日：2012-01-30
申请人： Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
发明人： Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
IPC分类号： G11C11/14
CPC分类号： G11C14/0081
摘要： Certain embodiments provide a nonvolatile memory circuit in which a first p-channel MOS transistor and a first n-channel spin MOS transistor are connected in series, a second p-channel MOS transistor and a second n-channel spin MOS transistor are connected in series, gates of the first p-channel MOS transistor and the first n-channel spin MOS transistor are connected, gates of the second p-channel MOS transistor and the second n-channel spin MOS transistor are connected, a first n-channel transistor includes a drain connected to a drain of the first p-channel transistor and the gate of the second p-channel transistor, a second n-channel transistor includes a drain connected to a drain of the second p-channel transistor and the gate of the first p-channel transistor, and gates of the first and second n-channel transistors are connected.
摘要翻译：某些实施例提供了其中第一p沟道MOS晶体管和第一n沟道自旋MOS晶体管串联连接的非易失性存储器电路，第二p沟道MOS晶体管和第二n沟道自旋MOS晶体管串联连接第一p沟道MOS晶体管和第一n沟道自旋MOS晶体管的栅极连接，第二p沟道MOS晶体管和第二n沟道自旋MOS晶体管的栅极连接，第一n沟道晶体管包括连接到第一p沟道晶体管的漏极和第二p沟道晶体管的栅极的漏极，第二n沟道晶体管包括连接到第二p沟道晶体管的漏极和第一p沟道晶体管的栅极的漏极 p沟道晶体管，第一和第二n沟道晶体管的栅极连接。

43. 发明授权

US07943974B2 Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloy 有权
标题翻译：旋转MOS场效应晶体管和隧道磁阻效应元件使用具有Heusler合金的堆叠
公开(公告)号：US07943974B2
公开(公告)日：2011-05-17
申请号：US12662100
申请日：2010-03-31
申请人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11C11/161 , G11C11/1659 , H01L27/228 , H01L29/66984 , H01L43/08
摘要： A spin MOS field effect transistor includes a source electrode and a drain electrode each having a structure obtained by stacking an impurity diffusion layer, a (001)-oriented MgO layer and a Heusler alloy. The impurity diffusion layer is formed in a surface region of a semiconductor layer. The (001)-oriented MgO layer is formed on the impurity diffusion layer. The Heusler alloy is formed on the MgO layer.
摘要翻译：自旋MOS场效应晶体管包括源电极和漏电极，每个源极和漏极具有通过层叠杂质扩散层，（001）取向的MgO层和Heusler合金而获得的结构。杂质扩散层形成在半导体层的表面区域中。（001）取向的MgO层形成在杂质扩散层上。 Heusler合金形成在MgO层上。

44. 发明申请

US20100244897A1 SPIN MOSFET AND RECONFIGURABLE LOGIC CIRCUIT 有权
标题翻译：旋转MOSFET和可重新配置的逻辑电路
公开(公告)号：US20100244897A1
公开(公告)日：2010-09-30
申请号：US12725561
申请日：2010-03-17
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa
IPC分类号： H03K19/173 , H01L29/78
CPC分类号： H01L43/02 , B01D53/1493 , B01D53/62 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1695 , H01L28/00 , H01L29/0843 , H01L29/0895 , H01L29/66984 , H01L43/10
摘要： A spin MOSFET includes: a first ferromagnetic layer provided on an upper face of a semiconductor substrate, and having a fixed magnetization direction perpendicular to a film plane; a semiconductor layer provided on an upper face of the first ferromagnetic layer, including a lower face opposed to the upper face of the first ferromagnetic layer, an upper face opposed to the lower face, and side faces different from the lower face and the upper face; a second ferromagnetic layer provided on the upper face of the semiconductor layer, and having a variable magnetization direction perpendicular to a film plane; a first tunnel barrier provided on an upper face of the second ferromagnetic layer; a third ferromagnetic layer provided on an upper face of the first tunnel barrier; a gate insulating film provided on the side faces of the semiconductor layer; and a gate electrode provided on the side faces of the semiconductor layer with the gate insulating film being interposed therebetween.
摘要翻译：自旋MOSFET包括：设置在半导体衬底的上表面上并且具有与膜平面垂直的固定磁化方向的第一铁磁层; 设置在所述第一铁磁层的上表面上的半导体层，包括与所述第一铁磁层的上表面相对的下表面，与所述下表面相对的上表面，以及与所述下表面和所述上表面不同的侧面 ; 第二铁磁层，设置在所述半导体层的上表面上，并且具有与膜平面垂直的可变磁化方向; 设置在所述第二铁磁层的上表面上的第一隧道势垒; 设置在所述第一隧道屏障的上表面上的第三铁磁层; 设置在所述半导体层的侧面上的栅极绝缘膜; 以及设置在半导体层的侧面上的栅电极，其间插入有栅极绝缘膜。

45. 发明授权

US07796423B2 Reconfigurable logic circuit 有权
标题翻译：可重构逻辑电路
公开(公告)号：US07796423B2
公开(公告)日：2010-09-14
申请号：US12339638
申请日：2008-12-19
申请人： Hideyuki Sugiyama , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito , Tetsufumi Tanamoto
发明人： Hideyuki Sugiyama , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito , Tetsufumi Tanamoto
IPC分类号： G11C11/00
CPC分类号： H03K19/1733 , G11C11/161 , G11C11/1675 , G11C11/1697
摘要： It is made possible to provide a reconfigurable logic circuit with which high integration can be achieved. A reconfigurable logic circuit includes: a multiplexer which includes a plurality of spin MOSFETs each having a source and drain containing a magnetic material, and a selecting portion including a plurality of MOSFETs and selecting a spin MOSFET from the plurality of spin MOSFETs, based on control data transmitted from control lines; a determining circuit which determines whether magnetization of the magnetic material of the source and drain of a selected spin MOSFET, which is selected by the selecting portion, is in a first state or in a second state; and a first and second write circuits which put the magnetization of the magnetic material of the source and drain of the selected spin MOSFET into the second and first states respectively by supplying a write current flowing between the source and drain of the selected spin MOSFET.
摘要翻译：可以提供可实现高集成度的可重构逻辑电路。可重配置逻辑电路包括：多路复用器，其包括多个自旋MOSFET，每个具有包含磁性材料的源极和漏极，以及包括多个MOSFET的选择部分，并且基于控制从多个自旋MOSFET中选择自旋MOSFET 从控制线传输的数据; 确定电路，其确定由选择部分选择的所选择的自旋MOSFET的源极和漏极的磁性材料的磁化是处于第一状态还是处于第二状态; 以及第一和第二写入电路，其通过提供在选定的自旋MOSFET的源极和漏极之间流动的写入电流，将所选自旋MOSFET的源极和漏极的磁性材料的磁化分别置于第二和第一状态。

46. 发明申请

US20100072528A1 SPIN TRANSISTOR, INTEGRATED CIRCUIT, AND MAGNETIC MEMORY 有权
标题翻译：旋转晶体管，集成电路和磁记忆
公开(公告)号：US20100072528A1
公开(公告)日：2010-03-25
申请号：US12561475
申请日：2009-09-17
申请人： Tomoaki INOKUCHI , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
发明人： Tomoaki INOKUCHI , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Yoshiaki Saito
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： A spin transistor includes a first ferromagnetic layer, a second ferromagnetic layer, a semiconductor layer between the first and second ferromagnetic layers, and a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers. The first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands.
摘要翻译：自旋晶体管包括第一铁磁层，第二铁磁层，第一和第二铁磁层之间的半导体层，以及在半导体层的表面上或上方的栅电极，该表面位于第一和第二铁磁层之间。第一铁磁层包括具有位于高能侧的第一少数自旋带和位于低能侧的第二少数自旋带的铁磁体，并且在高能量侧的区域中的费米能级高于中间第一和第二少数自旋带之间的间隙。

47. 发明申请

US20090057654A1 SPIN FET AND MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译： SPIN FET和磁性元件
公开(公告)号：US20090057654A1
公开(公告)日：2009-03-05
申请号：US12197710
申请日：2008-08-25
申请人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa
发明人： Yoshiaki SAITO , Hideyuki Sugiyama , Tomoaki Inokuchi , Mizue Ishikawa
IPC分类号： H01L29/82 , G11B5/127
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/3268 , H01L43/08
摘要： A spin FET of an aspect of the present invention includes source/drain regions, a channel region between the source/drain regions, and a gate electrode above the channel region. Each of the source/drain regions includes a stack structure which is comprised of a low work function material and a ferromagnet. The low work function material is a non-oxide which is comprised of one of Mg, K, Ca and Sc, or an alloy which includes the non-oxide of 50 at % or more.
摘要翻译：本发明的一个自旋FET包括源极/漏极区域，源极/漏极区域之间的沟道区域和沟道区域上方的栅极电极。源极/漏极区域中的每一个包括由低功函数材料和铁磁体组成的堆叠结构。低功函数材料是由Mg，K，Ca和Sc中的一种或包含50原子％以上的非氧化物的合金构成的非氧化物。

48. 发明申请

US20070164336A1 SPIN FET AND SPIN MEMORY 失效
标题翻译：旋转FET和旋转存储器
公开(公告)号：US20070164336A1
公开(公告)日：2007-07-19
申请号：US11610100
申请日：2006-12-13
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L29/66984 , G11C11/16 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
摘要翻译：根据本发明的示例的自旋FET包括其磁化方向固定的磁性钉扎层，其磁化方向改变的磁性自由层，磁性被钉扎层和磁性自由层之间的通道，设置在通过栅极绝缘层的沟道，以及设置在磁性自由层上的磁化方向由电场改变的多层。

49. 发明申请

US20060227465A1 Magneto-resistance effect element and magnetic memory 失效
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US20060227465A1
公开(公告)日：2006-10-12
申请号：US11228326
申请日：2005-09-19
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译：可以减少自旋注入写入所需的电流。磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。

50. 发明授权

US09112139B2 Spin transistor and memory 有权
标题翻译：旋转晶体管和存储器
公开(公告)号：US09112139B2
公开(公告)日：2015-08-18
申请号：US13526007
申请日：2012-06-18
申请人： Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Tetsufumi Tanamoto , Hideyuki Sugiyama , Mizue Ishikawa , Yoshiaki Saito
IPC分类号： H01L43/08 , H01L29/66
CPC分类号： H01L43/08 , H01L29/66984
摘要： A spin transistor according to an embodiment includes: a first magnetic layer formed above a substrate and serving as one of a source and a drain; an insulating film having a lower face facing to an upper face of the first magnetic layer, an upper face opposed to the lower face, and a side face different from the lower and upper faces, the insulating film being formed on the upper face of the first magnetic layer and serving as a channel; a second magnetic layer formed on the upper face of the insulating film and serving as the other one of the source and the drain; a gate electrode formed along the side face of the insulating film; and a gate insulating film located between the gate electrode and the side face of the insulating film.
摘要翻译：根据实施例的自旋晶体管包括：形成在衬底上并用作源极和漏极之一的第一磁性层; 绝缘膜，其具有面向第一磁性层的上表面的下表面，与下表面相对的上表面，以及不同于下表面和上表面的侧面，绝缘膜形成在第一磁性层的上表面上第一磁性层，作为通道; 第二磁性层，形成在绝缘膜的上表面上并用作源极和漏极中的另一个; 沿绝缘膜的侧面形成的栅电极; 以及位于绝缘膜的栅极和侧面之间的栅极绝缘膜。

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