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41. 发明授权

US10192185B2 Farmland management system and farmland management method 有权
公开(公告)号：US10192185B2
公开(公告)日：2019-01-29
申请号：US14835877
申请日：2015-08-26
申请人： Yasuhiro Tomii , Shohei Matsumura , Takashi Noguchi , Kensuke Masuda , Kohji Oshikiri , Takeshi Denda , Hirokazu Takenaka , Yuji Yamanaka
发明人： Yasuhiro Tomii , Shohei Matsumura , Takashi Noguchi , Kensuke Masuda , Kohji Oshikiri , Takeshi Denda , Hirokazu Takenaka , Yuji Yamanaka
IPC分类号： G06Q10/06 , G06Q50/02
摘要： A farmland management system includes an information detection unit configured to acquire information relating to a crop being cultivated, a storage unit configured to store crop registration information for estimating a growth condition of the crop, a growth estimation unit configured to refer to the crop registration information and estimate the growth condition of the crop based on the information relating to the crop and the crop registration information, and a display unit configured to display the growth condition estimated by the growth estimation unit.

42. 发明授权

US08789944B2 Optical article and optical article production method 有权
标题翻译：光学制品和光学制品的生产方法
公开(公告)号：US08789944B2
公开(公告)日：2014-07-29
申请号：US13172587
申请日：2011-06-29
申请人： Keiji Nishimoto , Takashi Noguchi , Hiroyuki Seki
发明人： Keiji Nishimoto , Takashi Noguchi , Hiroyuki Seki
IPC分类号： G02C7/02
CPC分类号： G02B1/116 , C23C14/083 , C23C14/30 , G02B1/12 , G02B1/16 , G02B1/18 , Y10T428/265
摘要： An optical article comprising: an optical base material; and a translucent layer that contains TiOx (0
摘要翻译：一种光学制品，包括：光学基材; 以及包含TiO x（0

43. 发明申请

US20130231786A1 ENGINEERING DEVICE AND POINT INFORMATION GENERATING METHOD 审中-公开
标题翻译：工程设备和点信息生成方法
公开(公告)号：US20130231786A1
公开(公告)日：2013-09-05
申请号：US13884194
申请日：2011-10-24
申请人： Takashi Noguchi
发明人： Takashi Noguchi
IPC分类号： G05D23/19
CPC分类号： G05D23/19 , F24F11/52 , G05B19/0426 , G05B2219/23261
摘要： An engineering device includes a template producing unit that produces a template that defines monitoring point information and control point information as information for an object that is an equipment subject to monitoring/control, a system defining unit that defines system information for each equipment of a facility that is subject to monitoring/control, a physical entity deploying unit that produces monitoring point information and control point information for each individual equipment by deploying the template, for each individual equipment within the facility, following the system information, and a modification processing unit that regenerates the monitoring point information and control point information for each individual equipment, by deploying, to each individual equipment within the facility, a post-modification template, following the system information, when a modification has been made to the template.
摘要翻译：工程装置包括：模板生成单元，其生成将监视点信息和控制点信息定义为作为受监视/控制的设备的对象的信息的模板;系统定义单元，其定义设施的每个设备的系统信息接受监视/控制的物理实体部署单元，根据系统信息，通过部署模板为每个单独设备生成监视点信息和控制点信息，以及设备内的每个设备，以及修改处理单元，通过在对该模板进行修改的情况下，按照系统信息部署到设施内的每个单独的设备，再次生成每个单独设备的监视点信息和控制点信息。

44. 发明授权

US08203268B2 Discharge lamp with a reflective mirror with optimized electrode configuration 有权
标题翻译：具有优化电极配置的反光镜的放电灯
公开(公告)号：US08203268B2
公开(公告)日：2012-06-19
申请号：US12550426
申请日：2009-08-31
申请人： Hideyuki Matsumoto , Takashi Noguchi
发明人： Hideyuki Matsumoto , Takashi Noguchi
IPC分类号： H01J1/62
CPC分类号： H01J61/0732
摘要： A discharge lamp configured to suppress temperature increases in the electrode on the opening part side of a reflective mirror is described. The discharge lamp includes an F electrode and an R electrode having shapes before forming the melt electrodes that satisfy at least one of the following conditions (a) to (c): (a) The diameter of the core wire of the F electrode is d1f, and the diameter of the core wire of the R electrode is d1r, then d1f>1.2×d1r; (b) The wire diameter of the coil of said F electrode is d2f, and the wire diameter of the coil of the R electrode is d2r, then d2f>1.2×d2r; (c) the number of windings of the coil of the F electrode is nf, and the number of windings of the coil of the R electrode is nr, then nf>1.2×nr.
摘要翻译：描述了构造成抑制反射镜的开口部侧的电极的温度升高的放电灯。放电灯包括F电极和R电极，其形成熔融电极之前的形状满足以下条件（a）至（c）中的至少一个：（a）F电极的芯线的直径为d1f ，R电极的芯线直径为d1r，d1f> 1.2×d1r; （b）所述F电极的线圈的线径为d2f，R电极的线圈的线径为d2r，d2f> 1.2×d2r; （c）F电极的线圈的绕组数为nf，R电极的线圈的绕组数为nr，nf> 1.2×nr。

45. 发明授权

US08128225B2 Optical article and process for producing the same 有权
标题翻译：光学制品及其制造方法
公开(公告)号：US08128225B2
公开(公告)日：2012-03-06
申请号：US12710701
申请日：2010-02-23
申请人： Keiji Nishimoto , Takashi Noguchi , Hiroyuki Seki
发明人： Keiji Nishimoto , Takashi Noguchi , Hiroyuki Seki
IPC分类号： G02C7/10 , G02C7/02 , B32B17/06 , B05D5/06
CPC分类号： G02B1/115 , G02C7/108 , G02C2202/16
摘要： A process for producing an optical article having an antireflection layer formed directly or via another layer on an optical base material, includes: forming a primary layer contained in the antireflection layer; and forming a light transmissive conductive layer containing a metal containing germanium as a main component and/or a compound of germanium and a transition metal on a surface of the primary layer.
摘要翻译：一种光学制品的制造方法，其特征在于，在光学基材上直接或经由另一层形成具有抗反射层的光学物品的制造方法，其特征在于，包括：形成所述防反射层中含有的主层; 以及在所述主层的表面上形成含有锗作为主要成分的金属和/或锗和过渡金属的化合物的透光导电层。

46. 发明申请

US20120026456A1 Optical Article and Optical Article Production Method 有权
标题翻译：光学制品和光学制品生产方法
公开(公告)号：US20120026456A1
公开(公告)日：2012-02-02
申请号：US13172587
申请日：2011-06-29
申请人： Keiji NISHIMOTO , Takashi NOGUCHI , Hiroyuki SEKI
发明人： Keiji NISHIMOTO , Takashi NOGUCHI , Hiroyuki SEKI
IPC分类号： G02C7/02 , C23C14/48 , B32B5/00 , C23C14/08 , G02B1/11 , B32B9/04
CPC分类号： G02B1/116 , C23C14/083 , C23C14/30 , G02B1/12 , G02B1/16 , G02B1/18 , Y10T428/265
摘要： An optical article comprising: an optical base material; and a translucent layer that contains TiOx (0
摘要翻译：一种光学制品，包括：光学基材; 以及包含TiO x（0

47. 发明授权

US08058094B2 Transistor, method of fabricating the same and organic light emitting display including the transistor 有权
标题翻译：晶体管，其制造方法和包括该晶体管的有机发光显示器
公开(公告)号：US08058094B2
公开(公告)日：2011-11-15
申请号：US12707115
申请日：2010-02-17
申请人： Takashi Noguchi , Jong-man Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung , Hyuck Lim
发明人： Takashi Noguchi , Jong-man Kim , Jang-yeon Kwon , Kyung-bae Park , Ji-sim Jung , Hyuck Lim
IPC分类号： H01L21/00
CPC分类号： H01L29/78645 , H01L27/1288 , H01L27/3244 , H01L29/78624 , H01L29/78696
摘要： A transistor includes; at least two polycrystalline silicon layers disposed substantially parallel to each other, each polycrystalline silicon layer including a channel region and at least two high conductivity regions disposed at opposing sides of the channel region; a gate which corresponds to the channel region of the two polycrystalline silicon layers and which crosses the two polycrystalline silicon layers, and a gate insulating layer interposed between the gate and the two polycrystalline silicon layers, wherein low conductivity regions are disposed adjacent to one edge of the gate and are formed between the channel region and one high conductivity region of each polycrystalline silicon layer.
摘要翻译：晶体管包括：至少两个多晶硅层基本上彼此平行地布置，每个多晶硅层包括沟道区和至少两个设置在沟道区相对侧的高导电性区; 对应于两个多晶硅层的沟道区并与两个多晶硅层交叉的栅极和介于栅极和两个多晶硅层之间的栅极绝缘层，其中低导电性区域邻近并且形成在每个多晶硅层的沟道区域和一个高导电率区域之间。

48. 发明授权

US07816678B2 Organic light emitting display with single crystalline silicon TFT and method of fabricating the same 有权
标题翻译：具有单晶硅TFT的有机发光显示器及其制造方法
公开(公告)号：US07816678B2
公开(公告)日：2010-10-19
申请号：US12175778
申请日：2008-07-18
申请人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
发明人： Takashi Noguchi , Wenxu Xianyu , Huaxiang Yin
IPC分类号： H01L35/24 , H01L51/00 , H01L31/00 , H01L21/00 , H01L51/40
CPC分类号： H01L27/1266 , H01L27/1255 , H01L27/3244 , H01L29/78603
摘要： Provided is an organic light emitting display, in which a semiconductor circuit unit of 2T-1C structure including a switching transistor and a driving transistor formed of single crystalline silicon is formed on a plastic substrate. A method of fabricating the single crystalline silicon includes: growing a single crystalline silicon layer to a predetermined thickness on a crystal growth plate; depositing a buffer layer on the single crystalline silicon layer; forming a partition layer at a predetermined depth in the single crystalline silicon layer by, e.g., implanting hydrogen ions in the single crystalline silicon layer from an upper portion of an insulating layer; attaching a substrate to the buffer layer; and releasing the partition layer of the single crystalline silicon layer by heating the partition layer from the crystal growth plate to obtain a single crystalline silicon layer of a predetermined thickness on the substrate.
摘要翻译：提供一种有机发光显示器，其中在塑料基板上形成包括开关晶体管和由单晶硅形成的驱动晶体管的2T-1C结构的半导体电路单元。制造单晶硅的方法包括：在晶体生长板上生长单晶硅层至预定厚度; 在单晶硅层上沉积缓冲层; 通过例如从绝缘层的上部注入单晶硅层中的氢离子，在单晶硅层中形成预定深度的分隔层; 将衬底附接到缓冲层; 以及通过从晶体生长板加热分隔层来释放单晶硅层的分隔层，以在基板上获得预定厚度的单晶硅层。

49. 发明申请

US20100228445A1 Activation device for occupant protection apparatus and method for activating the occupant protection apparatus 失效
标题翻译：用于乘员保护装置的激活装置和用于激活乘员保护装置的方法
公开(公告)号：US20100228445A1
公开(公告)日：2010-09-09
申请号：US12660823
申请日：2010-03-04
申请人： Toshihide Kondoh , Takashi Noguchi
发明人： Toshihide Kondoh , Takashi Noguchi
IPC分类号： B60R21/0136
CPC分类号： B60R21/0132 , B60R21/01332 , B60R21/0136 , B60R2021/0004 , B60R2021/0011 , B60R2021/01322
摘要： An activation device is configured to activate a protection apparatus for protecting an occupant. The activation device includes a front collision detection unit and a rear collision detection unit. The front collision detection unit outputs a front-collision-state activation signal to a front-collision protection apparatus so as to activate the front-collision protection apparatus when detecting front collision of the vehicle. The rear collision detection unit outputs a rear-collision-state activation signal to a rear-collision protection apparatus so as to activate the rear-collision protection apparatus when detecting rear collision of the vehicle. The rear collision detection unit prohibits output of the rear-collision-state activation signal to the rear-collision protection apparatus for a first period when the front collision detection unit detects front collision of the vehicle.
摘要翻译：激活装置被配置为激活用于保护乘员的保护装置。激活装置包括前碰撞检测单元和后碰撞检测单元。前碰撞检测单元向前碰撞保护装置输出前碰撞状态激活信号，以便在检测到车辆的前方碰撞时启动前防撞保护装置。后方碰撞检测单元向后方碰撞保护装置输出后方碰撞状态激活信号，以便在检测到车辆的后方碰撞时起动后方碰撞保护装置。当前方碰撞检测部检测到车辆的前方碰撞时，后方碰撞检测部在第一期间禁止向后方碰撞保护装置输出后方碰撞状态激活信号。

50. 发明授权

US07772711B2 Semiconductor device including single crystal silicon layer 有权
标题翻译：半导体器件包括单晶硅层
公开(公告)号：US07772711B2
公开(公告)日：2010-08-10
申请号：US11430117
申请日：2006-05-09
申请人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
发明人： Takashi Noguchi , Hans S. Cho , Wenxu Xianyu , Do-young Kim , Jang-yeong Kwon , Huaxiang Yin , Kyung-bae Park , Xiaoxin Zhang
IPC分类号： H01L27/11
CPC分类号： H01L21/84 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L29/66772 , H01L29/7842 , Y10S257/903
摘要： A semiconductor device including a substrate, a P-MOS single crystal TFT formed on the substrate, and an N-MOS single crystal TFT formed on the P-MOS single crystal TFT. The source region of the P-MOS single crystal TFT and the source region of the N-MOS single crystal TFT may be connected to each other. The P-MOS single crystal TFT and the N-MOS single crystal TFT may share a common gate. Also, the P-MOS single crystal TFT may include a single crystal silicon layer with a crystal plane of (100) and a crystal direction of . The N-MOS single crystal TFT may include a single crystal silicon layer having the same crystal direction as the single crystal silicon layer of the P-MOS single crystal TFT and having a tensile stress greater than the single crystal silicon layer of the P-MOS single crystal TFT.
摘要翻译：包括基板，形成在基板上的P-MOS单晶TFT的半导体器件和形成在P-MOS单晶TFT上的N-MOS单晶TFT。 P-MOS单晶TFT的源极区域和N-MOS单晶TFT的源极区域可以彼此连接。 P-MOS单晶TFT和N-MOS单晶TFT可以共用公共栅极。此外，P-MOS单晶TFT可以包括具有（100）的晶面并且晶体方向<100的单晶硅层。 N-MOS单晶TFT可以包括与P-MOS单晶TFT的单晶硅层相同的晶体方向的单晶硅层，其拉应力大于P-MOS的单晶硅层单晶TFT。

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