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41. 发明授权

US07492046B2 Electric fuses using CNTs (carbon nanotubes) 失效
标题翻译：使用碳纳米管的电熔丝
公开(公告)号：US07492046B2
公开(公告)日：2009-02-17
申请号：US11379582
申请日：2006-04-21
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
IPC分类号： H01L23/48
CPC分类号： H01L23/53276 , H01L23/5256 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： A fuse structure and a method for operating the same. The fuse structure operating method includes providing a structure. The structure includes (a) an electrically conductive layer and (b) N electrically conductive regions hanging over without touching the electrically conductive layer. N is a positive integer and N is greater than 1. The N electrically conductive regions are electrically connected together. The structure operating method further includes causing a first electrically conductive region of the N electrically conductive regions to touch the electrically conductive layer without causing the remaining N−1 electrically conductive regions to touch the electrically conductive layer.
摘要翻译：熔丝结构及其操作方法。熔丝结构操作方法包括提供一种结构。该结构包括（a）导电层和（b）悬挂在不接触导电层的N个导电区域。 N是正整数，N大于1.N导电区域电连接在一起。结构操作方法还包括使N个导电区域的第一导电区域与导电层接触而不会使剩余的N-1导电区域接触导电层。

42. 发明授权

US07483285B2 Memory devices using carbon nanotube (CNT) technologies 有权
标题翻译：使用碳纳米管（CNT）技术的存储器件
公开(公告)号：US07483285B2
公开(公告)日：2009-01-27
申请号：US12018915
申请日：2008-01-24
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
IPC分类号： G11C11/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L51/0048 , H01L51/0512
摘要： Structures for memory devices. The structure includes (a) a substrate; (b) a first and second electrode regions on the substrate; and (c) a third electrode region disposed between the first and second electrode regions. In response to a first write voltage potential applied between the first and third electrode regions, the third electrode region changes its own shape, such that in response to a pre-specified read voltage potential subsequently applied between the first and third electrode regions, a sensing current flows between the first and third electrode regions. In addition, in response to a second write voltage potential being applied between the second and third electrode regions, the third electrode region changes its own shape such that in response to the pre-specified read voltage potential applied between the first and third electrode regions, said sensing current does not flow between the first and third electrode regions.
摘要翻译：存储器件结构。该结构包括（a）基底; （b）基板上的第一和第二电极区域; 和（c）设置在第一和第二电极区之间的第三电极区。响应于施加在第一和第三电极区域之间的第一写入电压电位，第三电极区域改变其自身形状，使得响应于随后施加在第一和第三电极区域之间的预先指定的读取电压电势，感测电流在第一和第三电极区域之间流动。此外，响应于施加在第二和第三电极区域之间的第二写入电压电位，第三电极区域改变其自身形状，使得响应于施加在第一和第三电极区域之间的预先设定的读取电压电位，所述感测电流不在第一和第三电极区域之间流动。

43. 发明申请

US20080258246A1 PASSIVE ELECTRICALLY TESTABLE ACCELERATION AND VOLTAGE MEASUREMENT DEVICES 有权
标题翻译：被动电气测试加速和电压测量装置
公开(公告)号：US20080258246A1
公开(公告)日：2008-10-23
申请号：US12166623
申请日：2008-07-02
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger , Leah Marie Pfeifer Pastel
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger , Leah Marie Pfeifer Pastel
IPC分类号： H01L29/84
CPC分类号： G01P15/0802 , B82Y15/00 , G01P15/06 , G01P15/0891 , G01P15/135 , H01H1/0094 , H01H35/14
摘要： Acceleration and voltage measurement devices and methods of fabricating acceleration and voltage measurement devices. The acceleration and voltage measurement devices including an electrically conductive plate on a top surface of a first insulating layer; a second insulating layer on a top surface of the conductive plate, the top surface of the plate exposed in an opening in the second insulating layer; conductive nanotubes suspended across the opening, and electrically conductive contacts to said nanotubes.
摘要翻译：加速度和电压测量装置以及制造加速度和电压测量装置的方法。所述加速和电压测量装置包括在第一绝缘层的顶表面上的导电板; 在所述导电板的顶表面上的第二绝缘层，所述板的顶表面暴露在所述第二绝缘层的开口中; 导电纳米管悬挂在开口上，并与导电接触到所述纳米管。

44. 发明授权

US07439081B2 Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers 有权
标题翻译：利用定向碳纳米管导电层制造集成电路芯片的方法
公开(公告)号：US07439081B2
公开(公告)日：2008-10-21
申请号：US11552771
申请日：2006-10-25
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger III , Peter H. Mitchell
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger III , Peter H. Mitchell
IPC分类号： H01L21/00
CPC分类号： H01L21/7685 , B82Y10/00 , H01L21/32051 , H01L21/76838 , H01L21/76876 , H01L21/76877 , H01L23/53276 , H01L51/0048 , H01L51/0052 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/762 , Y10S977/778 , Y10S977/842 , H01L2924/00
摘要： A conductive layer in an integrated circuit is formed as a sandwich having multiple sublayers, including at least one sublayer of oriented carbon nanotubes. The conductive layer sandwich preferably contains two sublayers of carbon nanotubes, in which the carbon nanotube orientation in one sublayer is substantially perpendicular to that of the other layer. The conductive layer sandwich preferably contains one or more additional sublayers of a conductive material, such as a metal. In one embodiment, oriented carbon nanotubes are created by forming a series of parallel surface ridges, covering the top and one side of the ridges with a catalyst inhibitor, and growing carbon nanotubes horizontally from the uncovered vertical sides of the ridges. In another embodiment, oriented carbon nanotubes are grown on the surface of a conductive material in the presence of a directional flow of reactant gases and a catalyst.
摘要翻译：集成电路中的导电层形成为具有多个子层的夹层，包括至少一个定向碳纳米管子层。导电层夹层优选包含两个碳纳米管子层，其中一个子层中的碳纳米管取向基本上垂直于另一层的碳纳米管取向。导电层夹层优选地包含一种或多种另外的导电材料的子层，例如金属。在一个实施方案中，通过形成一系列平行的表面脊，通过用催化剂抑制剂覆盖脊的顶部和一侧并从脊的未覆盖的垂直侧水平生长碳纳米管来产生定向碳纳米管。在另一个实施方案中，定向碳纳米管在反应物气体和催化剂的定向流的存在下在导电材料的表面上生长。

45. 发明申请

US20080245984A1 MICRO-ELECTRO-MECHANICAL VALVES AND PUMPS AND METHODS OF FABRICATING SAME 有权
标题翻译：微机电阀和泵及其制造方法
公开(公告)号：US20080245984A1
公开(公告)日：2008-10-09
申请号：US12127975
申请日：2008-05-28
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger
IPC分类号： F16K31/02 , F04B17/00 , B21D53/00
CPC分类号： F15C1/06 , F04B43/043 , F15C5/00 , F16K99/0001 , F16K99/0015 , F16K99/0051 , F16K2099/0074 , F16K2099/0094 , Y10T29/49236 , Y10T29/49412 , Y10T137/2224
摘要： Micro-valves and micro-pumps and methods of fabricating micro-valves and micro-pumps. The micro-valves and micro-pumps include electrically conductive diaphragms fabricated from electrically conductive nano-fibers. Fluid flow through the micro-valves and pumping action of the micro-pumps is accomplished by applying electrostatic forces to the electrically conductive diaphragms.
摘要翻译：微型阀门和微型泵以及制造微型阀门和微型泵的方法。微型阀和微型泵包括由导电纳米纤维制成的导电隔膜。通过微型阀的流体流动和微型泵的泵送作用是通过将静电力施加到导电隔膜来实现的。

46. 发明申请

US20080137397A1 NON-VOLATILE SWITCHING AND MEMORY DEVICES USING VERTICAL NANOTUBES 失效
标题翻译：非挥发性开关和使用垂直纳米管的存储器件
公开(公告)号：US20080137397A1
公开(公告)日：2008-06-12
申请号：US12019746
申请日：2008-01-25
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger
IPC分类号： G11C13/00 , H01L21/82 , G11C11/34
CPC分类号： G11C13/025 , B82Y10/00 , G11C2213/16 , G11C2213/77 , Y10S977/742 , Y10S977/939 , Y10S977/943
摘要： Non-volatile and radiation-hard switching and memory devices using vertical nano-tubes and reversibly held in state by van der Waals' forces and methods of fabricating the devices. Means for sensing the state of the devices include measuring capacitance, and tunneling and field emission currents.
摘要翻译：使用垂直纳米管的非易失性和辐射硬的开关和存储器件，并通过范德华力力可逆地保持状态和制造器件的方法。用于感测装置状态的装置包括测量电容，以及隧穿和场发射电流。

47. 发明授权

US07385839B2 Memory devices using carbon nanotube (CNT) technologies 有权
标题翻译：使用碳纳米管（CNT）技术的存储器件
公开(公告)号：US07385839B2
公开(公告)日：2008-06-10
申请号：US11275010
申请日：2005-12-01
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
IPC分类号： G11C11/00
CPC分类号： G11C13/025 , B82Y10/00 , H01L51/0048 , H01L51/0512
摘要： Structures and methods for operating the same. The structure includes (a) a substrate; (b) a first and second electrode regions on the substrate; and (c) a third electrode region disposed between the first and second electrode regions. In response to a first write voltage potential applied between the first and third electrode regions, the third electrode region changes its own shape, such that in response to a pre-specified read voltage potential subsequently applied between the first and third electrode regions, a sensing current flows between the first and third electrode regions. In addition, in response to a second write voltage potential being applied between the second and third electrode regions, the third electrode region changes its own shape such that in response to the pre-specified read voltage potential applied between the first and third electrode regions, said sensing current does not flow between the first and third electrode regions.
摘要翻译：结构和操作方法。该结构包括（a）基底; （b）基板上的第一和第二电极区域; 和（c）设置在第一和第二电极区之间的第三电极区。响应于施加在第一和第三电极区域之间的第一写入电压电位，第三电极区域改变其自身形状，使得响应于随后施加在第一和第三电极区域之间的预先指定的读取电压电势，感测电流在第一和第三电极区域之间流动。此外，响应于施加在第二和第三电极区域之间的第二写入电压电位，第三电极区域改变其自身形状，使得响应于施加在第一和第三电极区域之间的预先设定的读取电压电位，所述感测电流不在第一和第三电极区域之间流动。

48. 发明授权

US07374793B2 Methods and structures for promoting stable synthesis of carbon nanotubes 有权
标题翻译：促进碳纳米管稳定合成的方法和结构
公开(公告)号：US07374793B2
公开(公告)日：2008-05-20
申请号：US10733974
申请日：2003-12-11
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Hotak , Charles William Koburger, III , Peter H. Mitchell , Larry Alan Nesbit
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Hotak , Charles William Koburger, III , Peter H. Mitchell , Larry Alan Nesbit
IPC分类号： C23C16/00 , D01F9/12 , D01F9/127
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/162 , C01B2202/06 , C01B2202/22 , C01B2202/34 , H01J1/3044 , H01J2201/30469 , Y10S977/742 , Y10S977/84 , Y10S977/842 , Y10S977/843 , Y10T428/30
摘要： A method for synthesizing carbon nanotubes and structure formed thereby. The method includes forming carbon nanotubes on a plurality of synthesis sites supported by a first substrate, interrupting nanotube synthesis, mounting a free end of each carbon nanotube to a second substrate, and removing the first substrate. Each carbon nanotube is capped by one of the synthesis sites, to which growth reactants have ready access. As the carbon nanotubes lengthen during resumed nanotube synthesis, access to the synthesis sites remains unoccluded.
摘要翻译：一种合成碳纳米管的方法及由此形成的结构。该方法包括在由第一基板支撑的多个合成位置上形成碳纳米管，中断纳米管合成，将每个碳纳米管的自由端安装到第二基板上，以及去除第一基板。每个碳纳米管被其中一个合成位点封盖，生长反应物可以随时进入。由于碳纳米管在恢复纳米管合成过程中延长，所以进入合成位点仍未被排除。

49. 发明授权

US07264415B2 Methods of forming alternating phase shift masks having improved phase-shift tolerance 失效
标题翻译：形成具有改进的相移公差的交替相移掩模的方法
公开(公告)号：US07264415B2
公开(公告)日：2007-09-04
申请号：US10798908
申请日：2004-03-11
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell , Larry Alan Nesbit
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III , Peter H. Mitchell , Larry Alan Nesbit
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/30
摘要： Methods for fabricating alternating phase shift masks or reticles used in semiconductor optical lithography systems. The methods generally include forming a layer of phase shift mask material on a handle substrate and patterning the layer to define recessed phase shift windows. The patterned layer is transferred from the handle wafer to a mask blank. The depth of the phase shift windows is determined by the thickness of the layer of phase shift mask material and is independent of the patterning process. In particular, the depth of the phase shift windows is not dependent upon the etch rate uniformity of an etch process across a surface of a mask blank.
摘要翻译：用于制造用于半导体光刻系统中的交替相移掩模或掩模版的方法。所述方法通常包括在手柄基板上形成一层相移掩模材料，并且图案化该层以限定凹陷的相移窗口。图案层从手柄晶片转移到掩模板。相移窗口的深度由相移掩模材料层的厚度确定，并且与图案化工艺无关。特别地，相移窗口的深度不依赖于通过掩模板的表面的蚀刻工艺的蚀刻速率均匀性。

50. 发明授权

US07102201B2 Strained semiconductor device structures 失效
标题翻译：应变半导体器件结构
公开(公告)号：US07102201B2
公开(公告)日：2006-09-05
申请号：US10892467
申请日：2004-07-15
申请人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
发明人： Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/78 , H01L23/485 , H01L29/165 , H01L29/41725 , H01L29/665 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor fabrication methods and structures, devices and integrated circuits characterized by enhanced operating performance. The structures generally include first and second source/drain regions formed in a body of a semiconductor material and a channel region defined in the body between the first and second source/drain regions. Disposed in at least one of the first and second source/drain regions are a plurality of plugs each formed from a volume-expanded material that transfers compressive stress to the channel region. The compressively strained channel region may be useful, for example, for improving the operating performance of p-channel field effect transistors (PFET's).
摘要翻译：半导体制造方法和结构，器件和集成电路，其特征在于增强的操作性能。结构通常包括形成在半导体材料的主体中的第一和第二源极/漏极区域以及限定在第一和第二源极/漏极区域之间的主体中的沟道区域。在第一和第二源极/漏极区域中的至少一个中设置有多个插塞，每个插塞由容积扩大的材料形成，该压缩应力向沟道区域传递压缩应力。压缩应变通道区域可能是有用的，例如，用于改善p沟道场效应晶体管（PFET）的操作性能。

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