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    • 41. 发明授权
    • Light emitting diode and fabrication method thereof
    • 发光二极管及其制造方法
    • US07989235B2
    • 2011-08-02
    • US12700720
    • 2010-02-05
    • Seong Jae Kim
    • Seong Jae Kim
    • H01L21/00
    • H01L33/32H01L33/0025H01L33/06H01L33/12
    • A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0
    • 提供一种发光二极管(LED)及其制造方法,其能够通过形成具有低浓度铟的InGaN层并且其晶格常数与LED的有源层的晶格常数相似来提高亮度。 LED包括:设置在蓝宝石衬底上的缓冲层; 设置在缓冲层上的GaN层; 设置在GaN层上的掺杂GaN层; 具有设置在GaN层上的铟的GaN层; 设置在具有铟的GaN层上的有源层; 以及设置在有源层上的P型GaN。 这里,具有铟的GaN层的经验式由In(x)Ga(1-x)N给出,x的范围由0
    • 48. 发明授权
    • Light emitting diode and fabrication method thereof
    • 发光二极管及其制造方法
    • US07682849B2
    • 2010-03-23
    • US11889549
    • 2007-08-14
    • Seong Jae Kim
    • Seong Jae Kim
    • H01L21/00
    • H01L33/32H01L33/0025H01L33/06H01L33/12
    • A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0
    • 提供一种发光二极管(LED)及其制造方法,其能够通过形成具有低浓度铟的InGaN层并且其晶格常数与LED的有源层的晶格常数相似来提高亮度。 LED包括:设置在蓝宝石衬底上的缓冲层; 设置在缓冲层上的GaN层; 设置在GaN层上的掺杂GaN层; 具有设置在GaN层上的铟的GaN层; 设置在具有铟的GaN层上的有源层; 以及设置在有源层上的P型GaN。 这里,具有铟的GaN层的经验式由In(x)Ga(1-x)N给出,x的范围由0