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    • 43. 发明授权
    • Secure processor and system
    • 安全的处理器和系统
    • US07681044B2
    • 2010-03-16
    • US11225180
    • 2005-09-14
    • Seiji Goto
    • Seiji Goto
    • H04L9/32H04L9/00G06F11/30
    • G06F12/1491G06F21/71G06F21/72G06F21/85
    • A processor includes an execution unit configured to execute a program, a bus coupled to the execution unit, a local memory coupled to the bus, a DMA unit coupled to the bus, and an interface to couple the bus to an exterior, wherein the DMA unit is configured to perform a DMA transfer process in response to instruction from the execution unit, to load information by the DMA transfer process from the exterior through the interface, to decrypt the loaded information, and to write the decrypted information to the local memory by the DMA transfer process.
    • 处理器包括被配置为执行程序,耦合到执行单元的总线,耦合到总线的本地存储器,耦合到总线的DMA单元以及将总线耦合到外部的接口的执行单元,其中DMA 单元被配置为响应于来自执行单元的指令执行DMA传送处理,通过DMA从外部通过接口的DMA传送处理来加载信息,以解密所加载的信息,并且将解密的信息写入本地存储器 DMA传输过程。
    • 44. 发明申请
    • Film Forming Apparatus, Matching Device, and Impedance Control Method
    • 成膜装置,匹配装置和阻抗控制方法
    • US20090188430A1
    • 2009-07-30
    • US11883580
    • 2006-01-24
    • Satoshi MatsudaYuji AsaharaHideo YamakoshiSeiji Goto
    • Satoshi MatsudaYuji AsaharaHideo YamakoshiSeiji Goto
    • B05C11/00
    • H05H1/46C23C16/26C23C16/52H05H2001/4682
    • The present invention realizes an impedance control for avoiding the extinction of a plasma caused due to a sudden change in a load impedance, which may occur immediately after the plasma is generated. A film-forming apparatus of the present invention includes a power supply; a matching circuit; an electrode configured to receive electric power from the power supply through the matching circuit, and to generate a plasma inside a film forming chamber for accommodating a film forming target based on the electric power; and a control section configured to control an impedance of the matching circuit. The control section keeps the impedance of the matching circuit constant during a first period starting at a first time t1 when the power supply starts to supply the electric power to the electrode, and controls the impedance of the matching circuit based on a reflected-wave power from the electrode for a second period starting at a second time t2 when the first period ends.
    • 本发明实现了一种阻抗控制,用于避免在等离子体产生后立即发生的负载阻抗突然变化引起的等离子体消光。 本发明的成膜装置包括:电源; 匹配电路; 电极,被配置为通过匹配电路从电源接收电力,并且在用于基于电力容纳成膜靶的成膜室内产生等离子体; 以及控制部,被配置为控制所述匹配电路的阻抗。 控制部在电源开始向电极供给电力时,在从第一时刻t1开始的第一期间保持匹配电路的阻抗恒定,并且基于反射波功率来控制匹配电路的阻抗 从第一时段结束时的第二时刻t2开始的第二期间。