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    • 48. 发明申请
    • DEPOSITION SYSTEM FOR THIN FILM FORMATION
    • 薄膜形成沉积系统
    • US20090081885A1
    • 2009-03-26
    • US11861359
    • 2007-09-26
    • David H. LevyRoger S. KerrJeffrey T. Carey
    • David H. LevyRoger S. KerrJeffrey T. Carey
    • H01L21/311C23C16/00
    • C23C16/45551B33Y80/00C23C16/45519C23C16/545
    • A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
    • 公开了一种在衬底上沉积薄膜材料的方法,包括同时引导一系列气体流从薄膜沉积系统的输送头的输出面朝向衬底的表面,并且其中一系列气体流动 包括至少第一反应性气体材料,惰性吹扫气体和第二反应性气体材料,其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应,其中一个或多个气体 流动提供至少有助于将衬底的表面与输送头的表面分离的压力。 还公开了能够进行这种处理的系统。