专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明申请

US20050104094A1 Solid-state imaging device and electronic still camera 有权
标题翻译：固态成像装置和电子静态照相机
公开(公告)号：US20050104094A1
公开(公告)日：2005-05-19
申请号：US10941898
申请日：2004-09-16
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H01L27/146 , H01L27/14 , H01L27/148 , H04N5/232 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14806 , H01L27/14627
摘要： A solid-state imaging device has a photodiode provided in a semiconductor substrate of a first conductivity type. A diffusion layer of a second conductivity type is provided in the semiconductor substrate. A gate wiring layer is provided on the semiconductor substrate between the photodiode and the diffusion layer. A gate insulating film is interposed between the semiconductor substrate and the gate wiring layer. A wiring layer is provided on the semiconductor substrate at a position which faces the gate wiring layer across the photodiode. The wiring layer is adjacent to the photodiode.
摘要翻译：固态成像装置具有设置在第一导电类型的半导体衬底中的光电二极管。在半导体衬底中设置有第二导电类型的扩散层。栅极布线层设置在半导体衬底上的光电二极管和扩散层之间。栅极绝缘膜介于半导体衬底和栅极布线层之间。布线层设置在半导体衬底上的跨越光电二极管的栅极布线层的位置。布线层与光电二极管相邻。

42. 发明授权

US06674470B1 MOS-type solid state imaging device with high sensitivity 失效
标题翻译：高灵敏度的MOS型固态成像装置
公开(公告)号：US06674470B1
公开(公告)日：2004-01-06
申请号：US08933975
申请日：1997-09-19
申请人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
发明人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H04N5/3765 , H04N5/3575 , H04N5/37457
摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要翻译：固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管，用于选择单元格。读出晶体管形成在半导体衬底中的第一器件区域中。复位晶体管形成在半导体衬底中的第二器件区域中。读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

43. 发明授权

US08508640B2 Solid-state imaging device and method for driving the same 失效
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US08508640B2
公开(公告)日：2013-08-13
申请号：US12970160
申请日：2010-12-16
申请人： Junji Naruse , Nagataka Tanaka
发明人： Junji Naruse , Nagataka Tanaka
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H04N5/2253 , H04N5/2254 , H04N5/35563 , H04N5/374 , H04N5/37457 , H04N9/045
摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.
摘要翻译：根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素，灵敏度像素。并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

44. 发明授权

US08446504B2 Solid-state imaging device including a pixel driving circuit 失效
标题翻译：固态成像装置，包括像素驱动电路
公开(公告)号：US08446504B2
公开(公告)日：2013-05-21
申请号：US13052182
申请日：2011-03-21
申请人： Hisayuki Taruki , Nagataka Tanaka
发明人： Hisayuki Taruki , Nagataka Tanaka
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3559 , H01L27/14609 , H04N5/3698
摘要： According to one embodiment, the pixel driving circuit causes the amplifying transistor to form a source follower circuit without applying a bias voltage to the vertical signal line and connects the FD to the power source. Thereafter, the pixel driving circuit separates the current source from the vertical signal line to cancel the source follower circuit, applies a bias voltage to the vertical signal line so that the voltage of the FD is raised when the brightness of the subject is higher than the reference value, and the voltage of the FD is lowered when the brightness of the subject is lower than the reference value, and turns on the read transistor. The pixel driving circuit turns off the read transistor, and then connects the current source to the vertical signal line, and causes the amplifying transistor to form the source follower circuit.
摘要翻译：根据一个实施例，像素驱动电路使放大晶体管形成源极跟随器电路，而不向垂直信号线施加偏置电压，并将FD连接到电源。此后，像素驱动电路将电流源与垂直信号线分离以抵消源极跟随器电路，向垂直信号线施加偏置电压，使得当被摄体的亮度高于参考值，并且当被摄体的亮度低于参考值时，FD的电压降低，并且接通读取的晶体管。像素驱动电路关闭读取晶体管，然后将电流源连接到垂直信号线，并使放大晶体管形成源极跟随器电路。

45. 发明授权

US08259204B2 Solid-state imaging device and method of driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US08259204B2
公开(公告)日：2012-09-04
申请号：US12558256
申请日：2009-09-11
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/335 , H04N5/3559 , H04N5/361 , H04N5/37457
摘要： A solid-state imaging device includes a unit cell, a first power supply which supplies a drain voltage to the amplifying transistor, and a second power supply which supplies a drain voltage to the reset transistor. The unit cell includes a photodiode which accumulates a signal charge obtained by photoelectric conversion of incident light, an amplifying transistor which has a control electrode capacitively coupled to a vertical signal line, and which amplifies the signal charge outputted from the photodiode and outputs the amplified signal charge to the vertical signal line, and a reset transistor which resets a voltage at the control electrode of the amplifying transistor.
摘要翻译：固态成像装置包括单位电池，向放大晶体管提供漏极电压的第一电源和向复位晶体管提供漏极电压的第二电源。单位电池包括积聚通过入射光的光电转换获得的信号电荷的光电二极管，具有与垂直信号线电容耦合的控制电极的放大晶体管，并放大从光电二极管输出的信号电荷，并输出放大信号对垂直信号线进行充电，以及复位晶体管，其复位放大晶体管的控制电极处的电压。

46. 发明申请

US20110128426A1 SOLID-STATE IMAGING APPARATUS 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20110128426A1
公开(公告)日：2011-06-02
申请号：US12885965
申请日：2010-09-20
申请人： Hisayuki Taruki , Nagataka Tanaka
发明人： Hisayuki Taruki , Nagataka Tanaka
IPC分类号： H04N5/335
CPC分类号： H04N5/376 , H01L27/14603 , H04N5/341
摘要： A solid-state imaging apparatus according to an embodiment includes pixels, horizontal control lines, vertical signal lines, a vertical scan circuit and a signal processing circuit; the horizontal control lines selecting the pixels in the row direction, the vertical signal lines having n lines (n is integer of 2 or larger) thereof arranged for each column so as to mutually intersect and being connected separately to pixels divided into n groups for each column, the vertical scan circuit selecting the horizontal control lines, and signal processing circuit processing pixel signals read out via the vertical signal lines simultaneously.
摘要翻译：根据实施例的固态成像装置包括像素，水平控制线，垂直信号线，垂直扫描电路和信号处理电路; 所述水平控制线选择行方向上的像素，对于每列排列有n行（n为2以上的整数）的垂直信号线，以便相互相交并且分别连接到每个分成n组的像素列，垂直扫描电路选择水平控制线，以及信号处理电路处理经由垂直信号线同时读出的像素信号。

47. 发明申请

US20100128156A1 SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置
公开(公告)号：US20100128156A1
公开(公告)日：2010-05-27
申请号：US12621798
申请日：2009-11-19
申请人： Nagataka TANAKA , Shinji Uya
发明人： Nagataka TANAKA , Shinji Uya
IPC分类号： H04N5/335
CPC分类号： H04N5/3745 , H01L27/14609 , H04N5/37452 , H04N5/378
摘要： A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion.
摘要翻译：固态成像装置包括多个单位像素。每个单位像素具有光电二极管，读取晶体管，浮动扩散，电容添加晶体管和复位晶体管。读取晶体管从光电二极管读取信号电荷。浮动扩散累积从读取晶体管读取的信号电荷。电容添加晶体管选择性地将电容添加到浮动扩散。复位晶体管复位浮动扩散电位。

48. 发明申请

US20100066879A1 SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20100066879A1
公开(公告)日：2010-03-18
申请号：US12558256
申请日：2009-09-11
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N5/3559 , H04N5/361 , H04N5/37457
摘要： A solid-state imaging device includes a unit cell, a first power supply which supplies a drain voltage to the amplifying transistor, and a second power supply which supplies a drain voltage to the reset transistor. The unit cell includes a photodiode which accumulates a signal charge obtained by photoelectric conversion of incident light, an amplifying transistor which has a control electrode capacitively coupled to a vertical signal line, and which amplifies the signal charge outputted from the photodiode and outputs the amplified signal charge to the vertical signal line, and a reset transistor which resets a voltage at the control electrode of the amplifying transistor.
摘要翻译：固态成像装置包括单位电池，向放大晶体管提供漏极电压的第一电源和向复位晶体管提供漏极电压的第二电源。单位电池包括积聚通过入射光的光电转换获得的信号电荷的光电二极管，具有与垂直信号线电容耦合的控制电极的放大晶体管，并放大从光电二极管输出的信号电荷，并输出放大信号对垂直信号线进行充电，以及复位晶体管，其复位放大晶体管的控制电极处的电压。

49. 发明申请

US20100059844A1 SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE DESIGNING METHOD 有权
标题翻译：固态成像装置和固态成像装置的设计方法
公开(公告)号：US20100059844A1
公开(公告)日：2010-03-11
申请号：US12552653
申请日：2009-09-02
申请人： Nagataka TANAKA
发明人： Nagataka TANAKA
IPC分类号： H01L31/0232 , G06F17/50
CPC分类号： G02B3/0056 , H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/14685 , H04N5/2257
摘要： A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.
摘要翻译：固态成像装置包括：光接收部，其以相同的间距配置在半导体基板的图像区域中，从成像光学系统射出的光入射到分别配置在受光部上方的聚光透镜;以及遮光部其每一个设置在每个光接收部分的一端。聚光透镜以第一间距在图像区域中沿第一方向布置在周边部分中，并且以比第一间距小的第二间距以与第一方向相反的第二方向布置在周边部分中。

50. 发明授权

US07429722B2 Pattern layout of CMOS image sensor 有权
标题翻译： CMOS图像传感器的图案布局
公开(公告)号：US07429722B2
公开(公告)日：2008-09-30
申请号：US11402976
申请日：2006-04-13
申请人： Hirokazu Sekine , Nagataka Tanaka
发明人： Hirokazu Sekine , Nagataka Tanaka
IPC分类号： H04N3/14 , H01L27/00
CPC分类号： H04N5/37457 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14643
摘要： A solid-state image pickup device comprises pixels and output circuits. The pixels are arranged two-dimensionally with a vertical and a horizontal, with pixels vertically adjacent to each other forming a pair. The output circuits are provided so as to extend from the spacing part of a pair of pixels vertically adjacent to each other to the spacing part of a pair of pixels horizontally adjacent to the pair of pixels. The output circuits output information corresponding to the signal charge read from a selected one of the pair of pixels. A unit cell is composed of a pair of pixels vertically adjacent to each other and an output circuit corresponding to the pair of pixels. Such unit cells are arranged in a checkered pattern. One of the pair of pixels in a unit cell diagonally adjacent to the pair of pixels is arranged in the same horizontal line.
摘要翻译：固态图像拾取装置包括像素和输出电路。像素以垂直和水平二维排列，其中彼此垂直相邻的像素形成一对。输出电路被设置成从垂直相邻的一对像素的间隔部分延伸到与该对像素水平相邻的一对像素的间隔部分。输出电路输出与从该对像素中选择的一个读取的信号电荷对应的信息。单位单元由彼此垂直相邻的一对像素和与该对像素对应的输出电路构成。这种单电池以方格图案排列。与该对像素对角地相邻的单位单元中的一对像素之一被布置在相同的水平线上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式