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    • 44. 发明授权
    • Method of forming shallow trench isolation
    • 形成浅沟槽隔离的方法
    • US06277710B1
    • 2001-08-21
    • US09439358
    • 1999-11-15
    • Hyun Tae KimKam Chew LeongElgin Kiok Boone Quek
    • Hyun Tae KimKam Chew LeongElgin Kiok Boone Quek
    • H01L2176
    • H01L21/76224
    • A method of forming shallow trench isolations wherein trench oxide grooving due to etch stop layer etching is eliminated by the formation of a liner oxidation overlying a polysilicon layer. A semiconductor substrate is provided. A pad oxide layer is grown. A polysilicon layer is deposited. Optionally, the polysilicon layer may be ion implanted to increase the oxidation rate. A silicon nitride layer is deposited. The silicon nitride layer, the polysilicon layer, the pad oxide layer and the semiconductor substrate are patterned to form trenches for planned shallow trench isolations. A liner oxidation layer is grown overlying the semiconductor substrate, the pad oxide layer, and the polysilicon layer inside the trenches. A trench oxide layer is deposited overlying said silicon nitride layer and filling said trenches. The trench oxide layer is polished down to the silicon nitride layer. The silicon nitride layer, the polysilicon layer, the pad oxide layer are etched away. The presence of the liner oxidation layer and the oxidized polysilicon layer protect the trench oxide layer during the etching of the silicon nitride layer, the polysilicon layer, and the pad oxide layer. The integrated circuit is completed.
    • 形成浅沟槽隔离的方法,其中通过形成覆盖多晶硅层的衬里氧化而消除由于蚀刻停止层蚀刻引起的沟槽氧化物开槽。 提供半导体衬底。 生长衬垫氧化物层。 沉积多晶硅层。 可选地,多晶硅层可以被离子注入以增加氧化速率。 沉积氮化硅层。 图案化氮化硅层,多晶硅层,焊盘氧化物层和半导体衬底,以形成用于规划的浅沟槽隔离的沟槽。 衬底氧化层生长在沟槽内部的半导体衬底,衬垫氧化物层和多晶硅层上。 沉积覆盖所述氮化硅层并填充所述沟槽的沟槽氧化物层。 将沟槽氧化物层向下抛光至氮化硅层。 氮化硅层,多晶硅层,衬垫氧化物层被蚀刻掉。 衬里氧化层和氧化多晶硅层的存在在氮化硅层,多晶硅层和衬垫氧化物层的蚀刻期间保护沟槽氧化物层。 集成电路完成。