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41. 发明申请

US20070171514A1 SEMICONDUCTOR WAVEGUIDE BASED HIGH SPEED ALL OPTICAL WAVELENGTH CONVERTER 有权
标题翻译：基于半导体波导的高速全光学波长转换器
公开(公告)号：US20070171514A1
公开(公告)日：2007-07-26
申请号：US11336285
申请日：2006-01-20
申请人： Haisheng Rong , Mario Paniccia
发明人： Haisheng Rong , Mario Paniccia
IPC分类号： G02F1/35 , G02F2/02
CPC分类号： G02F1/353 , G02F1/025 , G02F1/3536 , G02F2201/063 , G02F2202/105
摘要： A semiconductor-based all optical wavelength converter is disclosed. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. An optical pump source is optically coupled to direct an optical pump beam having a first wavelength into the optical waveguide. The optical waveguide is further optically coupled to receive an input optical beam having a second wavelength. The optical waveguide is optically coupled to generate an output optical beam having a third wavelength in response to the optical pump beam and the input optical beam in the optical waveguide. A diode structure is disposed in the optical waveguide. The diode structure includes at least P and N regions. The diode structure is biased to generate an electric field to remove free carriers from an optical path through the optical waveguide generated in response to two photon absorption in the optical waveguide.
摘要翻译：公开了一种基于半导体的全光波长转换器。根据本发明的方面的装置包括设置在半导体材料中的光波导。光泵浦光源被光耦合以将具有第一波长的光泵浦光引导到光波导中。光波导进一步光耦合以接收具有第二波长的输入光束。光波导被光学耦合以响应于光学波束和光波导中的输入光束而产生具有第三波长的输出光束。二极管结构设置在光波导中。二极管结构至少包括P和N区域。二极管结构被偏置以产生电场，以便通过响应于光波导中的两个光子吸收而产生的光波导从光路中去除自由载流子。

42. 发明申请

US20060126986A1 Reduced loss ultra-fast semiconductor modulator and switch 有权
标题翻译：减速超快速半导体调制器和开关
公开(公告)号：US20060126986A1
公开(公告)日：2006-06-15
申请号：US11007858
申请日：2004-12-09
申请人： Ansheng Liu , Mario Paniccia , Haisheng Rong
发明人： Ansheng Liu , Mario Paniccia , Haisheng Rong
IPC分类号： G02F1/01
CPC分类号： H04B10/505 , G02F1/2257 , G02F1/3515 , G02F1/3526
摘要： A fast optical modulator or switch with reduced optical loss is disclosed. An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material. An optical beam having a first wavelength is split by the optical splitter into first and second portions. First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter. The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam. The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.
摘要翻译：公开了一种光损耗降低的快速光调制器或开关。根据本发明的方面的装置包括设置在半导体材料中的光分路器。具有第一波长的光束被分光器分成第一和第二部分。设置在半导体材料中的第一和第二光波导光耦合到光分路器。光束的第一和第二部分分别被引导通过第一和第二光波导。第一光波导也被光学耦合以接收泵浦光束。泵浦光束具有泵浦波长和泵浦功率电平，以放大并相移第一波导中的第一波长的光束的第一部分。二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。光耦合器设置在半导体材料中并且光学耦合到第一和第二光波导以组合光束的第一和第二部分。

43. 发明公开

US20240195148A1 INTEGRATED SILICON (SI) TUNABLE LASER 审中-公开
公开(公告)号：US20240195148A1
公开(公告)日：2024-06-13
申请号：US18459184
申请日：2023-08-31
申请人： Ranjeet Kumar , Duanni Huang , Guan-Lin Su , Xinru Wu , Richard Jones , Haisheng Rong
发明人： Ranjeet Kumar , Duanni Huang , Guan-Lin Su , Xinru Wu , Richard Jones , Haisheng Rong
IPC分类号： H01S5/0687 , G02B6/125 , H01S5/00
CPC分类号： H01S5/0687 , G02B6/125 , H01S5/0085
摘要： Various embodiments described herein may relate to apparatuses, systems, techniques, and/or processes that are directed to tunable lasers. Specifically, embodiments herein may relate to chips that include both a tunable laser portion as well as a WLL portion on a same silicon substrate. Other embodiments may be described and/or claimed.

44. 发明申请

US20190339585A1 SEMICONDUCTOR PHOTONIC DEVICES USING PHASE CHANGE MATERIALS 审中-公开
公开(公告)号：US20190339585A1
公开(公告)日：2019-11-07
申请号：US16517315
申请日：2019-07-19
申请人： John Heck , Harel Frish , Derchang Kau , Charles Dennison , Haisheng Rong , Jeffrey Driscoll , Jonathan K. Doylend , George A. Ghiurcan , Michael E. Favaro
发明人： John Heck , Harel Frish , Derchang Kau , Charles Dennison , Haisheng Rong , Jeffrey Driscoll , Jonathan K. Doylend , George A. Ghiurcan , Michael E. Favaro
IPC分类号： G02F1/295
摘要： Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

45. 发明申请

US20160266331A1 MONOLITHIC PHYSICALLY DISPLACEABLE OPTICAL WAVEGUIDES 审中-公开
标题翻译：单光子物理位移光学波长
公开(公告)号：US20160266331A1
公开(公告)日：2016-09-15
申请号：US14917933
申请日：2013-12-03
申请人： David N. HUTCHISON , Haisheng RONG , John HECK
发明人： David N. HUTCHISON , Haisheng RONG , John HECK
IPC分类号： G02B6/42 , G02B6/12 , G02B6/122 , G02B6/14
CPC分类号： G02B6/422 , G02B6/12002 , G02B6/12004 , G02B6/12016 , G02B6/1203 , G02B6/12033 , G02B6/122 , G02B6/14 , G02B6/4208 , G02B6/4266
摘要： A portion of an optical waveguide extending laterally within a photonic integrated circuit (PIC) chip is at least partially freed from the substrate to allow physical displacement of a released waveguide end relative to the substrate and relative to an adjacent photonic device also fabricated in the substrate. The released waveguide end may be displaced to modulate interaction between the photonic device and an optical mode propagated by the waveguide. In embodiments where the photonic device is an optical coupler, employing for example an Echelle grating or arrayed waveguide grating (AWG), mode propagation through the coupler may be modulated via physical displacement of the released waveguide end. In one such embodiment, thermal sensitivity of an integrated optical wavelength division multiplexer (WDM) is reduced by displacing the released waveguide end relative to the coupler in a manner that counters a temperature dependence of the optical coupler.
摘要翻译：在光子集成电路（PIC）芯片内横向延伸的光波导的一部分至少部分地从衬底上释放出来，以允许释放的波导端相对于衬底和相对于也在衬底中制造的相邻光子器件的物理位移。释放的波导端可以移位以调制光子器件与由波导传播的光学模式之间的相互作用。在光子器件是光耦合器的实施例中，采用例如Echelle光栅或阵列波导光栅（AWG），通过耦合器的模式传播可以通过释放的波导端的物理位移进行调制。在一个这样的实施例中，集成光波分复用器（WDM）的热灵敏度通过以计数光耦合器的温度依赖性的方式相对于耦合器移位释放的波导端来减小。

46. 发明授权

US09042696B2 Method and structure combining vertical and angled facets in silicon photonic waveguides 有权
标题翻译：在硅光子波导中组合垂直和倾斜面的方法和结构
公开(公告)号：US09042696B2
公开(公告)日：2015-05-26
申请号：US12973585
申请日：2010-12-20
申请人： John Heck , Haisheng Rong
发明人： John Heck , Haisheng Rong
IPC分类号： G02B6/10 , G02B6/42 , G02B6/12 , G02B6/132
CPC分类号： G02B6/4214 , G02B6/12004 , G02B6/132
摘要： Embodiments of the invention use crystallographic etching of SOI wafers with a (110)-oriented epi layer to form both the vertical input facet and the re-entrant mirror. Proposed layout design combined with proposed orientation of the epi enables both vertical facets and re-entrant (upward-reflecting) mirror facets to be made in a single wafer-level wet etch process.
摘要翻译：本发明的实施例使用具有（110）取向的外延层的SOI晶片的晶体学蚀刻以形成垂直输入面和入射镜。拟议的布局设计结合提出的epi取向，可以在单晶片级湿法蚀刻工艺中制造垂直刻面和重入（向上反射）镜面。

47. 发明申请

US20140205234A1 VERTICAL OPTICAL COUPLER FOR PLANAR PHOTONIC CIRCUITS 有权
标题翻译：用于平面光电路的垂直光耦合器
公开(公告)号：US20140205234A1
公开(公告)日：2014-07-24
申请号：US13581858
申请日：2011-09-29
申请人： Haisheng Rong , Ofir Gan , Pradeep Sirnivasan , Assia Barkal , I-Wel Andy Hsieh , Mahesh Kirshamurthi , Yun-Chung Neil Na
发明人： Haisheng Rong , Ofir Gan , Pradeep Sirnivasan , Assia Barkal , I-Wel Andy Hsieh , Mahesh Kirshamurthi , Yun-Chung Neil Na
IPC分类号： G02B6/122 , G02B6/26 , G02B6/14 , G02B1/04
CPC分类号： G02B6/1225 , G02B1/045 , G02B6/1223 , G02B6/14 , G02B6/262 , G02B6/4201
摘要： Described herein are an apparatus, system, and method for providing a vertical optical coupler (VOC) for planar photonics circuits such as photonics circuits fabricated on silicon-on-insulator (SOI) wafers. In one embodiment, the VOC comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising: a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and another medium, a second end to receive the light for reflection, and a third end to output the reflected light. The VOC couples with a Si waveguide having a first region including: a first end to receive light; and an inverted tapered end in the direction of light propagation to output the received light, wherein the inverted tapered end of the Si waveguide is positioned inside the waveguide.
摘要翻译：这里描述了一种用于为诸如在绝缘体上硅（SOI）晶片上制造的光子电路的平面光子电路提供垂直光耦合器（VOC）的装置，系统和方法。在一个实施例中，VOC包括由折射率在1.45至3.45范围内的材料制成的波导，波导包括：第一端，被配置为通过波导与另一介质之间的全内反射来反射近似垂直的光，第二结束以接收用于反射的光，并且第三端输出反射光。 VOC与具有第一区域的Si波导耦合，包括：接收光的第一端; 以及在光传播方向上的倒锥形端，以输出接收的光，其中Si波导的倒锥形端位于波导内。

48. 发明授权

US08625942B2 Efficient silicon-on-insulator grating coupler 有权
标题翻译：高效硅绝缘体上光栅耦合器
公开(公告)号：US08625942B2
公开(公告)日：2014-01-07
申请号：US13075949
申请日：2011-03-30
申请人： Yun-Chung N. Na , Haisheng Rong
发明人： Yun-Chung N. Na , Haisheng Rong
IPC分类号： G02B6/34 , G02B6/26 , G02B6/42
CPC分类号： G01M11/00 , G02B6/1228 , G02B6/124
摘要： An efficient grating coupler for a semiconductor optical mode includes a tapered edge to couple light between waveguide modes constrained by differing waveguide thicknesses. An optical circuit or laser has a waveguide in a rib or strip waveguide section that is of different height (e.g., having different vertical constraints) than a waveguide section that has a grating coupler through which light passes off-circuit. The tapered edge can couple light between the two waveguide sections with very low loss and back-reflection. The low loss and minimal back-reflection enables testing of the photonics circuit on a wafer level, and improved performance through the grating coupler.
摘要翻译：用于半导体光学模式的有效的光栅耦合器包括锥形边缘，以在由不同波导厚度约束的波导模之间耦合光。光学电路或激光器具有与具有不同高度（例如，具有不同的垂直约束）的肋条或带状波导部分中的波导，该波导部分具有光通过偏光的光栅耦合器。锥形边缘可以以非常低的损耗和背反射在两个波导部分之间耦合光。低损耗和最小的背反射使得能够在晶片级上测试光子电路，并通过光栅耦合器改善性能。

49. 发明授权

US08450186B2 Optical modulator utilizing wafer bonding technology 有权
标题翻译：采用晶圆键合技术的光调制器
公开(公告)号：US08450186B2
公开(公告)日：2013-05-28
申请号：US12567645
申请日：2009-09-25
申请人： Haisheng Rong , Ansheng Liu
发明人： Haisheng Rong , Ansheng Liu
IPC分类号： H01L21/46
CPC分类号： H01L29/94 , G02F1/025 , G02F2001/0152 , G02F2202/105 , H01L21/76254 , H01L29/66181
摘要： Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.
摘要翻译：采用晶圆键合技术的光调制器。一种方法的实施例包括蚀刻绝缘体上硅（SOI）晶片以在SOI晶片的第一表面上产生硅波导结构的第一部分，以及制备第二晶片，所述第二晶片包括晶体硅层，所述第二晶片包括晶体硅的第一表面。该方法还包括使用晶片接合技术将第二晶片的第一表面与薄氧化物结合到SOI晶片的第一表面，其中硅波导结构的第二部分被蚀刻在晶体硅层中。

50. 发明申请

US20090067038A1 SEMICONDUCTOR RAMAN RING AMPLIFIER 失效
标题翻译：半导体拉邦放大器
公开(公告)号：US20090067038A1
公开(公告)日：2009-03-12
申请号：US12267501
申请日：2008-11-07
申请人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
发明人： Ying-hao Kuo , Haisheng Rong , Mario J. Paniccia
IPC分类号： H01S3/00
CPC分类号： H04B10/2916 , H01S3/0078 , H01S3/06754 , H01S3/06758 , H01S3/06791 , H01S3/094015 , H01S3/1003 , H01S3/302
摘要： A semiconductor-based Raman ring amplifier is disclosed. A method according to aspects of the present invention includes directing a pump optical beam having a pump wavelength and an input pump power level from an optical waveguide into a ring resonator. The optical waveguide and ring resonator are comprised in semiconductor material. A signal optical beam having a signal encoded thereon at a signal wavelength is directed from the optical waveguide into the ring resonator. The pump optical beam is resonated within the ring resonator to increase a power level of the pump optical beam to a power level sufficient to amplify the signal optical beam via stimulated Raman scattering (SRS) within the ring resonator. A free carrier concentration in the optical waveguide and the ring resonator is reduced to reduce attenuation of the pump optical beam and the signal beam.
摘要翻译：公开了一种基于半导体的拉曼环形放大器。根据本发明的方面的方法包括将具有泵浦波长的泵浦光束和来自光波导的输入泵功率电平引导到环形谐振器中。光波导和环形谐振器包含在半导体材料中。在信号波长处编码有信号的信号光束从光波导引导到环形谐振器中。泵浦光束在环形谐振器内谐振，以将泵浦光束的功率电平增加到足以通过环形谐振器内经受激拉曼散射（SRS）放大信号光束的功率水平。降低光波导和环形谐振器中的自由载流子浓度，以减少泵浦光束和信号光束的衰减。

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