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41. 发明申请

US20110024608A1 AVALANCHE IMPACT IONIZATION AMPLIFICATION DEVICES 有权
标题翻译： AVALANCHE影响离子放大器件
公开(公告)号：US20110024608A1
公开(公告)日：2011-02-03
申请号：US12533521
申请日：2009-07-31
申请人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H03F3/08 , H01L31/08
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/02327 , H01L31/03529 , Y02E10/50
摘要： A semiconductor photodetector may provide charge carrier avalanche multiplication at high field regions of a semiconductor material layer. A semiconductor current amplifier may provide current amplification by impact ionization near a high field region. A plurality of metal electrodes are formed on a surface of a semiconductor material layer and electrically biased to produce a non-uniform high electric field in which the high electric field strength accelerates avalanche electron-hole pair generation, which is employed as an effective avalanche multiplication photodetection mechanism or as an avalanche impact ionization current amplification mechanism.
摘要翻译：半导体光电探测器可以在半导体材料层的高场区域提供电荷载体雪崩倍增。半导体电流放大器可以通过在高场区域附近的冲击电离提供电流放大。多个金属电极形成在半导体材料层的表面上并被电偏置以产生不均匀的高电场，其中高电场强度加速雪崩电子 - 空穴对产生，其被用作有效的雪崩倍增光电检测机制或雪崩冲击电离电流放大机制。

42. 发明申请

US20100213561A1 Optoelectronic Device with Germanium Photodetector 有权
标题翻译：具有锗光电检测器的光电器件
公开(公告)号：US20100213561A1
公开(公告)日：2010-08-26
申请号：US12775084
申请日：2010-05-06
申请人： Solomon Assefa , Stephen Walter Bedell , Yurii A. Vlasov , Fengnian Xia
发明人： Solomon Assefa , Stephen Walter Bedell , Yurii A. Vlasov , Fengnian Xia
IPC分类号： H01L31/0232
CPC分类号： H01L31/1808 , G02B6/12004 , H01L31/02327 , H01L31/105 , H01L31/1812 , Y02E10/50
摘要： An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
摘要翻译：光电子器件包括光电检测器特征，设置在光电检测器特征的至少一部分上方的界面层，以及设置在界面层的至少一部分上的垂直接触。光电检测器特征包括锗并且可操作以将光信号转换成电信号。界面层包括镍。最后，垂直接触可操作地从光电检测器特征传输电信号。

43. 发明申请

US20070189688A1 Waveguide photodetector 有权
标题翻译：波导光电探测器
公开(公告)号：US20070189688A1
公开(公告)日：2007-08-16
申请号：US11354715
申请日：2006-02-15
申请人： Gabriel Dehlinger , Sharee McNab , Yurii Vlasov , Fengnian Xia
发明人： Gabriel Dehlinger , Sharee McNab , Yurii Vlasov , Fengnian Xia
IPC分类号： G02B6/10 , G02B6/26
CPC分类号： G02B6/12004 , H01L31/02327
摘要： The present invention is a waveguide photodetector. In one embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined and a detection layer formed on the waveguide layer where guided light is detected. Each of the waveguide layer and the detection layer allows for the guiding of no more than a single mode of light for a given polarization. In another embodiment, the waveguide photodetector includes a waveguide layer where light is guided or is confined, a detection layer formed on the waveguide layer where guided light is detected, a first electrical contact coupled to the detection layer, and a second electrical contact coupled to the detection layer. The first electrical contact and the second electrical contact are disposed in a spaced-apart, substantially parallel manner relative to each other.
摘要翻译：本发明是一种波导光电探测器。在一个实施例中，波导光电检测器包括其中光被引导或被限制的波导层，以及形成在波导层上的检测引导光的检测层。波导层和检测层中的每一个允许对于给定的偏振而引导不超过单一模式的光。在另一个实施例中，波导光电检测器包括其中光被引导或被限制的波导层，形成在波导层上的检测层，其中被检测导光，耦合到检测层的第一电触点和耦合到检测层。第一电触头和第二电触头相对于彼此以间隔开的大致平行的方式设置。

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