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41. 发明授权

US07638811B2 Graded dielectric layer 有权
标题翻译：梯度介电层
公开(公告)号：US07638811B2
公开(公告)日：2009-12-29
申请号：US11685761
申请日：2007-03-13
申请人： David B. Slater, Jr.
发明人： David B. Slater, Jr.
IPC分类号： H01L33/00
CPC分类号： H01L33/44
摘要： An optoelectronic device includes a passivation layer of a dielectric material having a graded composition that varies with depth, whether continuous or stepwise, to provide a first index of refraction proximate to a semiconductor or conductor material and provide a second index of refraction adjacent to a surrounding material, such as an encapsulant. The resulting graded dielectric layer reduces Fresnel losses by reducing index of refraction mismatches between the adjacent semiconductor or conductor layer and the surrounding medium. Methods for forming graded dielectric layers include supplying a nitrogen-containing source gas at a declining flow rate or concentration, while supplying an oxygen-containing source gas an rising flow rate or concentration, to a deposition chamber.
摘要翻译：光电器件包括具有渐变组分的电介质材料的钝化层，随着深度而变化，无论是连续的还是逐步的，以提供靠近半导体或导体材料的第一折射率，并提供邻近周围的第二折射率材料，如密封剂。通过减少相邻的半导体层或导体层与周围介质之间的折射失配指数，得到的梯度介电层减少菲涅耳损耗。形成渐变电介质层的方法包括以下降的流速或浓度供给含氮源气体，同时向沉积室供给上升的流量或浓度的含氧源气体。

42. 发明授权

US07638013B2 Systems for assembling components on submounts and methods therefor 有权
标题翻译：用于组装子系统组件的系统及其方法
公开(公告)号：US07638013B2
公开(公告)日：2009-12-29
申请号：US11585515
申请日：2006-10-24
申请人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
发明人： Norbert Hiller , Peter S. Andrews , David B. Slater, Jr. , Gerald H. Negley
IPC分类号： B32B37/00 , H05K13/00 , H01L21/00
CPC分类号： H01L21/67144 , H01L21/67132 , Y10T29/5313 , Y10T29/53174 , Y10T29/53178 , Y10T156/1089 , Y10T156/1097 , Y10T156/1707 , Y10T156/1712 , Y10T156/1734 , Y10T156/1744 , Y10T156/1911 , Y10T156/1978
摘要： A component assembly system is provided that includes a longitudinally elongated tape carrier, a longitudinally elongated submount carrier, and an assembly machine. A plurality of components may be attached to the tape carrier. The assembly machine is adapted to receiving the tape carrier, with the components attached thereto, and to receive the submount carrier. The assembly machine is further adapted to bring the tape carrier in close proximity to the submount carrier, and to attach the components to the submounts on the submount carrier.
摘要翻译：提供了一种部件组装系统，其包括纵向细长的带状载体，纵向细长的底座载体和组装机。多个部件可以附接到带载体。组装机适于接收带载体的带状载体，并接收底座载体。装配机还适于使带载体紧靠于底座托架，并将部件附接到副安装架托架上的底座上。

43. 发明授权

US07611915B2 Methods of manufacturing light emitting diodes including barrier layers/sublayers 有权
标题翻译：制造包括阻挡层/子层的发光二极管的方法
公开(公告)号：US07611915B2
公开(公告)日：2009-11-03
申请号：US11688605
申请日：2007-03-20
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews , John A. Edmond , Scott T. Allen
IPC分类号： H01L21/00
CPC分类号： H01L33/60 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/01057 , H01L2924/12041 , H01L2924/00
摘要： Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers.
摘要翻译：诸如发光二极管的半导体发光器件包括衬底，在衬底上的包括诸如发光二极管区域的发光区域的外延区域和在外延区域上包括反射器层的多层导电堆叠。阻挡层设置在反射器层上并在反射器层的侧壁上延伸。多层导电叠层还可以包括在反射器和外延区之间的欧姆层。阻挡层进一步在欧姆层的侧壁上延伸。阻挡层还可以延伸到多层导电叠层外的外延区域上。阻挡层可以制成一系列交替的第一和第二子层。

44. 发明授权

US07338822B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07338822B2
公开(公告)日：2008-03-04
申请号：US10840463
申请日：2004-05-06
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L24/73 , H01L33/0095 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y02P80/30 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

45. 发明授权

US07291529B2 Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon 有权
标题翻译：处理其上具有发光器件（LED）的半导体晶片背面的方法
公开(公告)号：US07291529B2
公开(公告)日：2007-11-06
申请号：US10987135
申请日：2004-11-12
申请人： David B. Slater, Jr. , Matthew Donofrio
发明人： David B. Slater, Jr. , Matthew Donofrio
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L21/78 , H01L33/20
摘要： Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the carrier. The first thickness of the wafer is reduced to a second thickness that is less than the first thickness by processing the backside of the wafer. The carrier is separated from the plurality of LEDs on the wafer and the wafer is cut to separate the plurality of LEDs from one another. Related devices are also disclosed.
摘要翻译：处理半导体晶片可以包括在具有第一厚度的半导体晶片上形成多个发光器件（LED）。使晶片上的多个LED与载体的表面接触以将晶片耦合到载体。通过处理晶片的背面，将晶片的第一厚度减小到小于第一厚度的第二厚度。载体与晶片上的多个LED分离，并且切割晶片以将多个LED彼此分离。还公开了相关设备。

46. 发明授权

US07026659B2 Light emitting diodes including pedestals 有权
公开(公告)号：US07026659B2
公开(公告)日：2006-04-11
申请号：US10859635
申请日：2004-06-03
申请人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.

47. 发明授权

US06888167B2 Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding 有权
标题翻译：发光器件和适用于倒装芯片接合的发光器件的倒装片接合
公开(公告)号：US06888167B2
公开(公告)日：2005-05-03
申请号：US10185252
申请日：2002-06-27
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L21/60 , H01L33/20 , H01L33/40 , H01L33/62 , H01L29/267
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

48. 发明授权

US06803243B2 Low temperature formation of backside ohmic contacts for vertical devices 有权
标题翻译：低温形成用于垂直器件的背面欧姆接触
公开(公告)号：US06803243B2
公开(公告)日：2004-10-12
申请号：US10003331
申请日：2001-10-31
申请人： David B. Slater, Jr. , Alexander Suvorov
发明人： David B. Slater, Jr. , Alexander Suvorov
IPC分类号： H01L2100
CPC分类号： H01L21/046 , H01L21/0485 , H01L31/022408 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： A method for forming an ohmic contact to silicon carbide for a semiconductor device comprises implanting impurity atoms into a surface of a silicon carbide substrate thereby forming a layer on the silicon carbide substrate having an increased concentration of impurity atoms, annealing the implanted silicon carbide substrate, and depositing a layer of metal on the implanted surface of the silicon carbide. The metal forms an ohmic contact “as deposited” on the silicon carbide substrate without the need for a post-deposition anneal step.
摘要翻译：用于形成用于半导体器件的碳化硅的欧姆接触的方法包括将杂质原子注入到碳化硅衬底的表面中，从而在碳化硅衬底上形成具有增加的杂质原子浓度的层，退火注入的碳化硅衬底，以及在所述碳化硅的植入表面上沉积金属层。金属在碳化硅衬底上形成“沉积”的欧姆接触，而不需要后沉积退火步骤。

49. 发明授权

US06791119B2 Light emitting diodes including modifications for light extraction 有权
标题翻译：发光二极管，包括光提取的修改
公开(公告)号：US06791119B2
公开(公告)日：2004-09-14
申请号：US10057821
申请日：2002-01-25
申请人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L3300
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。衬底的第一面可以包括在衬底中限定多个三角形基座的多个凹槽。凹槽可以包括锥形侧壁和/或斜面底板。衬底的第一面也可以包括一组通孔。通孔可以包括锥形侧壁和/或底板。

50. 发明授权

US06610551B1 Vertical geometry InGaN LED 有权
标题翻译：垂直几何InGaN LED
公开(公告)号：US06610551B1
公开(公告)日：2003-08-26
申请号：US09477982
申请日：2000-01-05
申请人： Kathleen Marie Doverspike , John Adam Edmond , Hua-shuang Kong , Heidi Marie Dieringer , David B. Slater, Jr.
发明人： Kathleen Marie Doverspike , John Adam Edmond , Hua-shuang Kong , Heidi Marie Dieringer , David B. Slater, Jr.
IPC分类号： H01L2120
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.
摘要翻译：公开了一种垂直几何形状的发光二极管，其能够发射电磁光谱的红色，绿色，蓝色，紫色和紫外线部分的光。发光二极管包括导电碳化硅衬底，InGaN量子阱，衬底和量子阱之间的导电缓冲层，量子阱的每个表面上的相应未掺杂的氮化镓层和垂直几何取向的欧姆接触。

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