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41. 发明授权

US07105439B2 Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology 有权
公开(公告)号：US07105439B2
公开(公告)日：2006-09-12
申请号：US10607496
申请日：2003-06-26
申请人： Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
发明人： Chih-Wei Chang , Mei-Yun Wang , Shau-Lin Shue , Mong-Song Liang
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/336
CPC分类号： H01L21/28518 , H01L29/4941 , H01L29/665 , H01L29/7833
摘要： A silicide method for integrated circuit and semiconductor device fabrication wherein a layer of nickel is formed over at least one silicon region of a substrate and a layer of cobalt is formed over the nickel layer. The cobalt/nickel bi-layer is then annealed to transform the bi-layer to a bi-silicide film having a cobalt-rich silicide portion and a nickel-rich silicide portion.

42. 发明申请

US20060113673A1 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060113673A1
公开(公告)日：2006-06-01
申请号：US11002331
申请日：2004-12-01
申请人： Gin Wang , Chao-Hsien Peng , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
发明人： Gin Wang , Chao-Hsien Peng , Chii-Ming Wu , Chih-Wei Chang , Shau-Lin Shue
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/02129 , H01L21/022 , H01L21/0228 , H01L21/28562 , H01L21/31625 , H01L23/482 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and fabrication thereof. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 Å. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.
摘要翻译：半导体器件及其制造。在第一电介质层中形成开口，暴露晶体管的有源区，并且在开口中以厚度小于等于一致地形成原子层沉积（ALD）TaN势垒。在原子层沉积（ALD）TaN势垒上形成铜层以填充开口。

43. 发明申请

US20050280118A1 Methods of manufacturing metal-silicide features 有权
标题翻译：金属硅化物的制造方法
公开(公告)号：US20050280118A1
公开(公告)日：2005-12-22
申请号：US10872343
申请日：2004-06-18
申请人： Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chiang-Ming Chuang , Shau-Lin Shue
发明人： Chen-Tung Lin , Chih-Wei Chang , Chii-Ming Wu , Mei-Yun Wang , Chiang-Ming Chuang , Shau-Lin Shue
IPC分类号： C30B1/00 , H01L21/20 , H01L21/28 , H01L21/285 , H01L21/321 , H01L21/336 , H01L21/36 , H01L21/768 , H01L23/485 , H01L29/06
CPC分类号： H01L29/66545 , H01L21/28061 , H01L21/28097 , H01L21/28525 , H01L21/76877 , H01L21/76889 , H01L23/485 , H01L2924/0002 , Y10S438/926 , H01L2924/00
摘要： A method of manufacturing a microelectronic device including forming an opening in a dielectric layer located over a substrate, forming a semi-conductive layer substantially conforming to the opening, and forming a conductive layer substantially conforming to the semi-conductive layer. At least a portion of the semi-conductive layer is doped by implanting through the conductive layer. The semi-conductive layer and the conductive layer may then be annealed.
摘要翻译：一种制造微电子器件的方法，包括在位于衬底上的电介质层中形成开口，形成基本上符合该开口的半导电层，以及形成基本上符合半导体层的导电层。半导体层的至少一部分通过通过导电层的注入来掺杂。然后可以对半导体层和导电层进行退火。

44. 发明申请

US20050239287A1 Silicide formation using a metal-organic chemical vapor deposited capping layer 审中-公开
标题翻译：使用金属有机化学气相沉积覆盖层的硅化物形成
公开(公告)号：US20050239287A1
公开(公告)日：2005-10-27
申请号：US10742202
申请日：2003-12-18
申请人： Mei-Yun Wang , Chih-Wei Chang , Cheng-Tung Lin , Chii-Ming Wu , Shau-Lin Shue
发明人： Mei-Yun Wang , Chih-Wei Chang , Cheng-Tung Lin , Chii-Ming Wu , Shau-Lin Shue
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/336
CPC分类号： H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A self-aligned silicide method for integrated circuit and semiconductor device fabrication wherein a metal layer is formed over one or more silicon regions of a substrate and a barrier metal layer is formed over the metal layer using a chemical vapor deposition process. The temperature at which the chemical vapor deposition process is performed causes the metal layer to react with the one or more silicon regions of the substrate to form a metal-silicide film over each of the silicon regions.
摘要翻译：一种用于集成电路和半导体器件制造的自对准硅化物方法，其中在衬底的一个或多个硅区域上形成金属层，并且使用化学气相沉积工艺在金属层上形成阻挡金属层。进行化学气相沉积工艺的温度导致金属层与衬底的一个或多个硅区域反应，以在每个硅区域上形成金属硅化物膜。

45. 发明授权

US06928650B2 Optical disk drive 失效
标题翻译：光盘驱动器
公开(公告)号：US06928650B2
公开(公告)日：2005-08-09
申请号：US10605098
申请日：2003-09-09
申请人： Chih-Wei Chang
发明人： Chih-Wei Chang
IPC分类号： G11B5/55 , G11B7/08 , G11B17/04 , G11B17/30
CPC分类号： G11B17/05 , G11B5/5526 , G11B7/082
摘要： An optical disk drive includes a mounting plate, a guide bar, a fixing structure for positioning the guide bar on the mounting plate, and a pickup head guided by the guide bar and moveable along a lengthwise direction of the guide bar. The fixing structure includes a fixed joint and a flexible pressure-providing joint. The fixed joint rigidly fixes one end of the guide bar to the mounting plate, the flexible pressure-providing joint positions another end of the guide bar on the mounting plate, and the two ends of the guide bar are fixed in their relative positions due to a flatness of the mounting plate and despite a positioning action of the fixing structure such that linear movement of the pickup head is guided by the guide bar.
摘要翻译：光盘驱动器包括安装板，引导杆，用于将导杆定位在安装板上的固定结构，以及由引导杆引导并可沿着导杆的长度方向移动的拾取头。固定结构包括固定接头和柔性压力提供接头。固定接头将引导杆的一端刚性地固定在安装板上，柔性的压力提供接头将导向杆的另一端定位在安装板上，引导杆的两端固定在相对位置，由于安装板的平坦度并且尽管固定结构的定位作用使得拾取头的直线运动被引导杆引导。

46. 发明授权

US06884736B2 Method of forming contact plug on silicide structure 有权
标题翻译：在硅化物结构上形成接触塞的方法
公开(公告)号：US06884736B2
公开(公告)日：2005-04-26
申请号：US10265937
申请日：2002-10-07
申请人： Chii-Ming Wu , Mei-Yun Wang , Chih-Wei Chang , Chin-Hwa Hsieh , Shau-Lin Shue , Chu-Yun Fu , Ju-Wang Hsu , Ming-Huan Tsai , Yuan-Hung Chiu
发明人： Chii-Ming Wu , Mei-Yun Wang , Chih-Wei Chang , Chin-Hwa Hsieh , Shau-Lin Shue , Chu-Yun Fu , Ju-Wang Hsu , Ming-Huan Tsai , Yuan-Hung Chiu
IPC分类号： H01L21/311 , H01L21/60 , H01L21/768 , H01L21/302
CPC分类号： H01L21/76829 , H01L21/31105 , H01L21/31116 , H01L21/76802 , H01L21/76832
摘要： A method of manufacturing a semiconductor device is provided. A semiconductor element is formed on a substrate. The semiconductor element has at least one nickel silicide contact region, an etch stop layer formed over said element, and an insulating layer formed over said etch stop layer. A portion of the etch stop layer immediately over a selected contact region is removed using a process that does not substantially react with the contact region, to form a contact opening. The contact opening is then filled with a conductive material to form a contact.
摘要翻译：提供一种制造半导体器件的方法。半导体元件形成在基板上。半导体元件具有至少一个硅化镍接触区，在所述元件上形成的蚀刻停止层，以及形成在所述蚀刻停止层上的绝缘层。使用基本上不与接触区域反应的方法去除在所选择的接触区域上方的蚀刻停止层的一部分，以形成接触开口。然后用导电材料填充接触开口以形成接触。

47. 发明授权

US08823894B2 Frame, backlight module and liquid crystal display module and method of fabricating the frame thereof 有权
标题翻译：框架，背光模块和液晶显示模块及其框架的制造方法
公开(公告)号：US08823894B2
公开(公告)日：2014-09-02
申请号：US12970967
申请日：2010-12-17
申请人： Chih-Wei Chang , Po-Chun Hsu , Kun-Hung Hsieh
发明人： Chih-Wei Chang , Po-Chun Hsu , Kun-Hung Hsieh
IPC分类号： G02F1/1333 , G02F1/1335
CPC分类号： G02B6/0085 , G02B6/0088 , G02B6/009
摘要： A frame formed by cutting and bending a plate base is provided. The maximum thickness of the frame is T, the thickness of the plate base is t, and 1.5t≦T≦2.5t. The frame includes a first plate element, a second plate element, and a bending portion. The second plate element is directly contacted to the first plate element, and the first plate element is substantially parallel to the second plate element. The bending portion is connected between the first plate element and the second plate element. A backlight module using the above-mentioned frame and a liquid crystal display (LCD) module using the backlight module are also provided.
摘要翻译：提供了通过切割和弯曲板底座形成的框架。框架的最大厚度为T，板底的厚度为t，1.5t＆nlE; T＆nlE; 2.5t。框架包括第一板元件，第二板元件和弯曲部分。第二板元件直接接触第一板元件，第一板元件基本上平行于第二板元件。弯曲部分连接在第一板元件和第二板元件之间。还提供了使用上述框架的背光模块和使用背光模块的液晶显示器（LCD）模块。

48. 发明授权

US08730222B2 Display capable of improving frame quality and method thereof 有权
标题翻译：能够提高帧质量的显示器及其方法
公开(公告)号：US08730222B2
公开(公告)日：2014-05-20
申请号：US13342211
申请日：2012-01-03
申请人： Chih-Wei Chang , Shu-Wen Chang , Chien-Yang Chen
发明人： Chih-Wei Chang , Shu-Wen Chang , Chien-Yang Chen
IPC分类号： G06F3/038 , G09G5/00
CPC分类号： G09G3/2096 , G09G3/2092 , G09G2310/0289 , G09G2310/061 , G09G2310/065 , G09G2310/08 , G09G2320/0238 , G09G2320/0252
摘要： A display capable of improving frame quality includes a display panel, a timing controller, and a source driver. The timing controller is used for generating a scan start signal, and generating at least one control signal in a blanking time of the display panel according to polarity of a last datum before the blanking time and polarity of a first datum after the blanking time. The source driver is used for generating at least one datum synchronized with the at least one control signal according to the polarity of the last datum before the blanking time, a voltage of the first datum after the blanking time and the at least one control signal. The source driver does not change a last datum of the at least one datum after the at least one control signal in the blanking time.
摘要翻译：能够提高帧质量的显示器包括显示面板，定时控制器和源驱动器。定时控制器用于产生扫描开始信号，并且根据消隐时间之前的最后数据的极性和消隐时间之后的第一数据的极性，在显示面板的消隐时间中产生至少一个控制信号。源驱动器用于根据消隐时间之前的最后数据的极性，消隐时间之后的第一数据的电压和至少一个控制信号，产生与至少一个控制信号同步的至少一个数据。在消隐时间中，源驱动器不改变至少一个控制信号之后的至少一个数据的最后数据。

49. 发明申请

US20130127408A1 PORTABLE ELECTRONIC DEVICE AND WIRELESS CHARGING DEVICE 有权
标题翻译：便携式电子设备和无线充电装置
公开(公告)号：US20130127408A1
公开(公告)日：2013-05-23
申请号：US13655624
申请日：2012-10-19
申请人： CHIH-WEI CHANG , GUO-LIANG WAN
发明人： CHIH-WEI CHANG , GUO-LIANG WAN
IPC分类号： H02J7/00
CPC分类号： H02J50/90 , H01F38/14 , H02J5/005 , H02J7/025 , H02J50/10 , H02J50/40
摘要： A portable electronic device includes a housing and at least one charging module installed in the housing. The at least one charging module includes a magnetic induction block and a coil unit positioned beside the magnetic induction block. The coil unit includes a base block and an induction coil coiled around the base block. The induction coil is configured for generating induction current under the action of a charging magnetic filed outside the housing. The magnetic induction block enhances the magnetic filed intensity acting on the induction coil.
摘要翻译：便携式电子设备包括壳体和安装在壳体中的至少一个充电模块。至少一个充电模块包括磁感应块和位于磁感应块旁边的线圈单元。线圈单元包括基座和围绕基座盘绕的感应线圈。感应线圈构造成在壳体外部的充电磁场的作用下产生感应电流。磁感应块增强了作用在感应线圈上的磁场强度。

50. 发明申请

US20130113769A1 DISPLAY CAPABLE OF IMPROVING FRAME QUALITY AND METHOD THEREOF 有权
标题翻译：可改善框架质量的显示器及其方法
公开(公告)号：US20130113769A1
公开(公告)日：2013-05-09
申请号：US13342211
申请日：2012-01-03
申请人： Chih-Wei Chang , Shu-Wen Chang , Chien-Yang Chen
发明人： Chih-Wei Chang , Shu-Wen Chang , Chien-Yang Chen
IPC分类号： G09G5/00
CPC分类号： G09G3/2096 , G09G3/2092 , G09G2310/0289 , G09G2310/061 , G09G2310/065 , G09G2310/08 , G09G2320/0238 , G09G2320/0252
摘要： A display capable of improving frame quality includes a display panel, a timing controller, and a source driver. The timing controller is used for generating a scan start signal, and generating at least one control signal in a blanking time of the display panel according to polarity of a last datum before the blanking time and polarity of a first datum after the blanking time. The source driver is used for generating at least one datum synchronized with the at least one control signal according to the polarity of the last datum before the blanking time, a voltage of the first datum after the blanking time and the at least one control signal. The source driver does not change a last datum of the at least one datum after the at least one control signal in the blanking time.
摘要翻译：能够提高帧质量的显示器包括显示面板，定时控制器和源驱动器。定时控制器用于产生扫描开始信号，并且根据消隐时间之前的最后数据的极性和消隐时间之后的第一数据的极性，在显示面板的消隐时间中产生至少一个控制信号。源驱动器用于根据消隐时间之前的最后数据的极性，消隐时间之后的第一数据的电压和至少一个控制信号，产生与至少一个控制信号同步的至少一个数据。在消隐时间中，源驱动器不改变至少一个控制信号之后的至少一个数据的最后数据。

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