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41. 发明授权

US07235920B2 Display device and method of its manufacture 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07235920B2
公开(公告)日：2007-06-26
申请号：US10670917
申请日：2003-09-24
申请人： Volker Haerle , Berthold Hahn
发明人： Volker Haerle , Berthold Hahn
IPC分类号： H05B33/00 , H01J9/00
CPC分类号： H01L27/3244 , H01L27/3209 , H01L27/3211 , H01L29/78684 , H01L2251/5323
摘要： A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control transistors are formed from a semiconductor material with a large band gap and are transparent in the visible spectral range. The invention also comprises a method for manufacturing such a display device.
摘要翻译：一种显示装置及其制造方法。在具有单独显示元件的第一阵列和用于显示元件的第二控制晶体管阵列的显示装置中，控制晶体管由具有大带隙的半导体材料形成，并且在可见光谱范围内是透明的。本发明还包括一种用于制造这种显示装置的方法。

42. 发明授权

US07115907B2 Radiation-emitting semiconductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07115907B2
公开(公告)日：2006-10-03
申请号：US10528852
申请日：2003-09-22
申请人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Andreas Ploessl , Wilhelm Stein
发明人： Johannes Baur , Dominik Eisert , Michael Fehrer , Berthold Hahn , Andreas Ploessl , Wilhelm Stein
IPC分类号： H01L27/15 , H01L29/24 , H01L29/20
CPC分类号： H01L33/32 , H01L33/405
摘要： A radiation-emitting semiconductor component with a layer structure (12) which includes a photon-emitting active layer (16), an n-doped cladding layer (14) and a p-doped cladding layer (18), a contact connected to the n-doped cladding layer (14) and a mirror layer (20) connected to the p-doped cladding layer (18). The mirror layer (20) is formed by an alloy of silver comprising one or more metals selected from the group consisting of Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta and Cr.
摘要翻译：具有层结构（12）的辐射发射半导体部件，其包括光子发射有源层（16），n掺杂包层（14）和p掺杂包层（18），与 n掺杂包层（14）和连接到p掺杂包层（18）的镜层（20）。镜层（20）由包含选自Ru，Rh，Pd，Au，Os，Ir，Pt，Cu，Ti，Ta和Cr中的一种或多种金属的银合金形成。

43. 发明申请

US20060211159A1 Method for the production of semi-conductor chips 有权
标题翻译：生产半导体芯片的方法
公开(公告)号：US20060211159A1
公开(公告)日：2006-09-21
申请号：US10561255
申请日：2005-06-24
申请人： Georg Bruederl , Berthold Hahn , Volker Haerle
发明人： Georg Bruederl , Berthold Hahn , Volker Haerle
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K26/53 , B23K26/57 , B23K2103/172 , H01L21/76254 , H01L21/78 , H01L33/0079
摘要： A method for producing a plurality of semiconductor chips, particularly radiation-emitting semiconductor chips, each having at least one epitaxially produced functional semiconductor layer stack, comprising the following method steps: preparing a growth substrate wafer (1) substantially comprised of semiconductor material from a semiconductor material system that is with respect to lattice parameters the same as or similar to that on which a semiconductor layer sequence for the functional semiconductor layer stack is based, forming in the growth substrate wafer (1) a separation zone (4) disposed parallel to a main face (100) of the growth substrate wafer (1), joining the growth substrate wafer (1) to an auxiliary carrier wafer (2), detaching along the separation zone (4) a portion (11) of the growth substrate wafer (1) that faces away from the auxiliary carrier wafer (2) as viewed from the separation zone (4), forming on the portion (12) of the growth substrate wafer remaining on the auxiliary carrier wafer (2) a growth surface for subsequent epitaxial growth of a semiconductor layer sequence, epitaxially growing the semiconductor layer sequence (5) on the growth surface, applying a chip substrate wafer to the semiconductor layer sequence, detaching the auxiliary carrier wafer (2), and singulating the composite composed of the semiconductor layer sequence and the chip substrate wafer (7) into mutually separate semiconductor chips.
摘要翻译：一种制造多个半导体芯片，特别是辐射发射半导体芯片的方法，每个半导体芯片具有至少一个外延生产的功能半导体层堆叠，包括以下方法步骤：制备基本上由半导体材料组成的生长衬底晶片（1）半导体材料系统，其相对于与功能半导体层堆叠的半导体层序列相同或类似的晶格参数，在生长衬底晶片（1）中形成平行于功能半导体层堆叠的分离区（4）生长衬底晶片（1）的主面（100），将生长衬底晶片（1）接合到辅助载体晶片（2），沿着分离区（4）分离生长衬底晶片的部分（11）（1），其从所述分离区（4）观察时远离所述辅助载体晶片（2），在所述生长衬垫的所述部分（12）上形成 e晶片保留在辅助载体晶片（2）上，用于随后外延生长半导体层序列，在生长表面上外延生长半导体层序列（5），将芯片衬底晶片应用于半导体层序列，分离辅助载体晶片（2），将由半导体层序列和芯片基板晶片（7）组成的复合体分离成相互分开的半导体芯片。

44. 发明申请

US20050116216A1 Optical semiconductor device with multiple quantum well structure 有权
标题翻译：具有多量子阱结构的光半导体器件
公开(公告)号：US20050116216A1
公开(公告)日：2005-06-02
申请号：US11014677
申请日：2004-12-16
申请人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
发明人： Volker Harle , Berthold Hahn , Hans-Jurgen Lugauer , Helmut Bolay , Stefan Bader , Dominik Eisert , Uwe Strauss , Johannes Volkl , Ulrich Zehnder , Alfred Lell , Andreas Weimer
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L29/06
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.
摘要翻译：具有多量子阱结构的光半导体器件，其中包括各种类型的半导体层的阱层和阻挡层交替层叠，其中基于氮化物半导体材料的第一组合物的器件阱层（6a）具有第一提供具有与第一电子能量相比较高的电子能量的氮化物半导体材料的第二组合物的电子能量和阻挡层（6b），然后在生长方向上通过辐射活性量子阱层（6c），其中布置在前面的基本上不辐射的阱层（6a）和阻挡层（6b）形成超晶格。

45. 发明申请

US20050104083A1 Method for fabricating a radiation-emitting semiconductor chip based on Ill-V nitride semiconductor 有权
标题翻译：用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法
公开(公告)号：US20050104083A1
公开(公告)日：2005-05-19
申请号：US11017615
申请日：2004-12-20
申请人： Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer
发明人： Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Harle , Hans-Jurgen Lugauer
IPC分类号： H01L33/00 , H01S5/343 , H01L29/24
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01S5/34333
摘要： A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
摘要翻译：一种制造具有基于III-V族氮化物半导体材料的薄膜元件的辐射发射半导体芯片的方法包括以下步骤：在外延衬底上沉积薄膜元件层序列。将薄膜元件接合到载体上，并且将外延基板从薄膜元件移除。外延衬底具有由PolySiC或PolyGaN制成的衬底主体或由SiC，GaN或蓝宝石构成的衬底主体，其通过结合层连接到生长层上，并且通过外延沉积薄膜元件的层序列。

46. 发明授权

US06878563B2 Radiation-emitting semiconductor element and method for producing the same 有权
标题翻译：辐射发射半导体元件及其制造方法
公开(公告)号：US06878563B2
公开(公告)日：2005-04-12
申请号：US10239106
申请日：2001-03-16
申请人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
发明人： Stefan Bader , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer , Manfred Mundbrod-Vangerow , Dominik Eisert
IPC分类号： H01L27/15 , H01L33/00 , H01L33/02 , H01L33/32 , H01L33/40 , H01L33/46 , H01L21/00
CPC分类号： H01L33/405 , H01L27/153 , H01L33/0079 , H01L33/02 , H01L33/22 , H01L33/32 , H01L33/44 , H01L33/46 , H01L2924/0002 , H01L2924/00
摘要： This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.
摘要翻译：本发明描述了一种基于GaN的辐射发射半导体元件，其半导体主体由不同GaN半导体层（1）的堆叠构成。半导体本体具有第一主表面（3）和第二主表面（4），所产生的辐射通过第一主表面（3）发射，反射器（6）在第二主表面（4）上产生）。本发明还描述了根据本发明的半导体组件的制造方法。首先将中间层（9）施加到基板（8），然后施加构成部件的半导体主体的多个GaN层（1）。然后分离基板（8）和中间层（9），并且在半导体本体的主表面上产生反射器（6）。

47. 发明申请

US20050073248A1 Display device and method of its manufacture 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050073248A1
公开(公告)日：2005-04-07
申请号：US10670917
申请日：2003-09-24
申请人： Volker Haerle , Berthold Hahn
发明人： Volker Haerle , Berthold Hahn
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L27/32 , H01L29/786 , H01L51/50 , H05B33/00
CPC分类号： H01L27/3244 , H01L27/3209 , H01L27/3211 , H01L29/78684 , H01L2251/5323
摘要： A display device and method for its manufacture. In a display device with a first array of individual display elements and a second array of control transistors for the display elements, control transistors are formed from a semiconductor material with a large band gap and are transparent in the visible spectral range. The invention also comprises a method for manufacturing such a display device.
摘要翻译：一种显示装置及其制造方法。在具有单独显示元件的第一阵列和用于显示元件的控制晶体管的第二阵列的显示装置中，控制晶体管由具有大带隙的半导体材料形成，并且在可见光谱范围内是透明的。本发明还包括一种用于制造这种显示装置的方法。

48. 发明授权

US06849878B2 Method for fabricating a radiation-emitting semiconductor chip based on III-V nitride semiconductor, and radiation-emitting semiconductor chip 有权
标题翻译：用于制造基于III-V族氮化物半导体的辐射发射半导体芯片的方法和辐射发射半导体芯片
公开(公告)号：US06849878B2
公开(公告)日：2005-02-01
申请号：US10377363
申请日：2003-02-28
申请人： Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
发明人： Stefan Bader , Michael Fehrer , Berthold Hahn , Volker Härle , Hans-Jürgen Lugauer
IPC分类号： H01L33/00 , H01S5/343
CPC分类号： B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01S5/34333
摘要： A method for fabricating a radiation-emitting semiconductor chip having a thin-film element based on III-V nitride semiconductor material includes the steps of depositing a layer sequence of a thin-film element on an epitaxy substrate. The thin-film element is joined to a carrier, and the epitaxy substrate is removed from the thin-film element. The epitaxy substrate has a substrate body made from PolySiC or PolyGaN or from SiC, GaN or sapphire, which is joined to a grown-on layer by a bonding layer, and on which the layer sequence of the thin-film element is deposited by epitaxy.
摘要翻译：一种制造具有基于III-V族氮化物半导体材料的薄膜元件的辐射发射半导体芯片的方法包括以下步骤：在外延衬底上沉积薄膜元件层序列。将薄膜元件接合到载体上，并且将外延基板从薄膜元件移除。外延衬底具有由PolySiC或PolyGaN制成的衬底主体或由SiC，GaN或蓝宝石构成的衬底主体，其通过结合层与生长层接合，并且薄膜元件的层序列通过外延沉积。

49. 发明授权

US06844565B2 Semiconductor component for the emission of electromagnetic radiation and method for production thereof 有权
标题翻译：用于发射电磁辐射的半导体元件及其制造方法
公开(公告)号：US06844565B2
公开(公告)日：2005-01-18
申请号：US10204500
申请日：2001-02-23
申请人： Alfred Lell , Volker Härle , Berthold Hahn , Johann Luft
发明人： Alfred Lell , Volker Härle , Berthold Hahn , Johann Luft
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343 , H01L29/06
CPC分类号： H01S5/2232 , H01S5/2063 , H01S5/2205 , H01S5/2215 , H01S5/2216 , H01S5/223 , H01S5/32341
摘要： According to the invention, a semiconductor component for the emission of electromagnetic radiation, especially light, is made that has the following features: an active layer for producing radiation, a p-type contact that is electrically connected to the active layer, an n-type contact that is electrically connected to the active layer, and a current-confining structure to define a current path, with the current-confining structure being provided between the n-type contact and the active layer.
摘要翻译：根据本发明，制造了用于发射电磁辐射，特别是光的半导体部件，其具有以下特征：用于产生辐射的有源层，电连接到有源层的p型接触，电连接到有源层的电流限制结构，以及限定电流路径的电流限制结构，其中电流限制结构设置在n型触点和有源层之间。

50. 发明授权

US09112127B2 Method for producing at least one optoelectronic semiconductor component 有权
标题翻译：用于制造至少一个光电子半导体部件的方法
公开(公告)号：US09112127B2
公开(公告)日：2015-08-18
申请号：US14003207
申请日：2012-03-02
申请人： Berthold Hahn , Andreas Leber
发明人： Berthold Hahn , Andreas Leber
IPC分类号： H01L33/64 , H01L33/00 , H01L33/42 , H01L33/62
CPC分类号： H01L33/64 , H01L33/005 , H01L33/42 , H01L33/62 , H01L2924/0002 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： A method can be used to provide at least one optoelectronic semiconductor component, A carrier includes a first surface and a second surface opposite the first surface. At least one optoelectronic semiconductor chip is arranged on the first surface of the carrier. The optoelectronic semiconductor chip is formed with at least one n-side region and at least one p-side region, and is applied with the n-side region or the p-side region to the first surface. An electrically insulating enclosure is arranged on exposed points of the outer faces of the semiconductor chip and of the first surface of the carrier. The electrically insulating enclosure is partially removed. After removal at least one major face, remote from the carrier, of the optoelectronic semiconductor chip is free of the electrically insulating enclosure at least in places.
摘要翻译：一种方法可用于提供至少一个光电子半导体部件。载体包括第一表面和与第一表面相对的第二表面。至少一个光电半导体芯片布置在载体的第一表面上。光电半导体芯片形成有至少一个n侧区域和至少一个p侧区域，并且将n侧区域或p侧区域施加到第一表面。电绝缘外壳设置在半导体芯片的外表面和载体的第一表面的暴露点上。电绝缘外壳部分拆除。至少在某些地方，除去光电半导体芯片远离载体的至少一个主要表面没有电绝缘外壳。

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