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    • 42. 发明授权
    • Method and apparatus for long-term multi-valued storage in dynamic
analog memory
    • 在动态模拟存储器中长期多值存储的方法和装置
    • US5479170A
    • 1995-12-26
    • US146660
    • 1993-11-02
    • Gert CauwenberghsAmnon Yariv
    • Gert CauwenberghsAmnon Yariv
    • G11C11/56G11C27/00G11C27/02H03M1/46H03M1/66H03M1/00
    • G11C11/565G11C16/3418G11C16/3431G11C27/00G11C27/024H03M1/464H03M1/664G11C7/16
    • A method and apparatus is described for refreshing the analog content of a analog memory having a volatile storage device. An analog value stored on a volatile storage device is iteratively adjusted to maintain the analog value in proximity to one of a set of predetermined discrete analog memory levels. Binary quantization of the stored value, yielding one bit of information corresponding to the analog value stored, determines whether to increase or decrease the stored value by a given small amount. In essence, the bit obtained by binary quantization encodes the direction toward the nearest discrete level. Memory retention achieved by periodic iteration of the method is robust to noise and random errors in the quantization, over a wide range of operating conditions. The apparatus includes as functional elements a binary quantizer and an increment/decrement refresh device, which may interface with the analog storage means in a variety of configurations, including configurations supporting multiplexed schemes for sharing quantizers and increment/decrement refresh devices among multiple storage cells.
    • 描述了一种用于刷新具有易失性存储装置的模拟存储器的模拟内容的方法和装置。 存储在易失性存储设备上的模拟值被迭代地调整以将模拟值保持在一组预定的离散模拟存储器级别中的一个附近。 存储值的二进制量化,产生与存储的模拟值对应的一位信息,确定是否将存储值增加或减少给定的小量。 实质上,通过二进制量化获得的比特编码朝向最近的离散级别的方向。 通过该方法的周期性迭代实现的存储器保持在宽范围的工作条件下对量化中的噪声和随机误差是鲁棒的。 该装置包括作为功能元件的二进制量化器和增量/递减刷新装置,其可以以各种配置与模拟存储装置接口,包括支持用于共享量化器的多路复用方案和在多个存储单元之间增加/减少刷新装置的配置。
    • 44. 发明授权
    • Method of manufacturing a distributed light emitting diode flat-screen
display for use in televisions
    • 制造用于电视机的分布式发光二极管平板显示器的方法
    • US5102824A
    • 1992-04-07
    • US609404
    • 1990-11-05
    • Charles F. NeugebauerAmnon Yariv
    • Charles F. NeugebauerAmnon Yariv
    • H01L25/075H01L33/08H01L33/20
    • H01L33/20H01L25/0753H01L33/08H01L2924/0002H01L33/18
    • A novel display screen structure and method of manufacturing such screens for use, for example, in large screen television displays. The process of the present invention is one which can be accomplished with no new materials, no critical geometric requirements such as critical separations and alignments and only low voltage drivers. The combination of these features results in a technology which can be easily scaled to large sizes to provide relatively low-cost large screens for televisions. An important step in the disclosed embodiment of the present invention is the alignment of a large plurality of columnar-shaped light emitting diode slivers in an uncured optical epoxy by applying an electric field through a mixture of such slivers and epoxy and then curing the epoxy to effectively fix the light emitting diode slivers in that aligned configuration. The light being emitted by such diodes is thereafter controlled by orthogonally directed electrodes which are optically transparent and which are placed on opposing surfaces of the thin plate-like structure fabricated in accordance with the invention.
    • 一种新颖的显示屏结构和制造这样的屏幕的方法,例如用于大屏幕电视显示器中。 本发明的方法是可以在没有新材料的情况下完成的,没有关键的几何要求,例如临界分离和排列以及只有低电压驱动器。 这些功能的结合产生了一种技术,可以轻松地扩展到大尺寸,为电视机提供相对较低成本的大屏幕。 在本发明的公开实施例中的重要步骤是通过将这样的条子和环氧树脂的混合物施加电场,然后将环氧树脂固化,将未固化的光学环氧树脂中的大量多个柱状发光二极管条排列到 有效地将发光二极管条固定在该对准配置中。 由这种二极管发射的光随后由光学透明的正交指向的电极控制,并且被放置在根据本发明制造的薄板状结构的相对表面上。
    • 49. 发明授权
    • Process for fabricating small geometry semiconductive devices including
integrated components
    • 用于制造包括集成部件的小几何形状半导体装置的方法
    • US4049944A
    • 1977-09-20
    • US606373
    • 1975-08-20
    • Hugh L. GarvinAmnon YarivSasson Somekh
    • Hugh L. GarvinAmnon YarivSasson Somekh
    • G03F7/20H01L21/027H01L21/265B23K9/00
    • G03F7/203H01L21/0275H01L21/2654
    • Disclosed is a process for fabricating small geometry electronic devices, including a variety of integrated optical devices. The process includes the steps of holographically exposing a resist masking layer to a plurality of optical interference patterns in order to develop a masking pattern on the surface of a semiconductive body. Thereafter, regions of the body exposed by openings in the masking pattern are ion beam machined to thereby establish very small dimension undulations in these regions. These closely spaced undulations have a variety of uses in optical devices as will be described. The present invention is not limited to the geometry control of semiconductive structures, and may also be used in the geometry control of metallization patterns which have a variety of applications, or the geometry control of any ion beam sensitive material.
    • 公开了一种用于制造小型几何电子器件的方法,包括各种集成的光学器件。 该方法包括以下步骤:将抗蚀剂掩模层全息曝光于多个光学干涉图案,以便在半导体本体的表面上形成掩模图案。 此后,通过掩模图案中的开口暴露的体的区域被加工成离子束,从而在这些区域中形成非常小的尺寸起伏。 这些紧密间隔的起伏在光学装置中具有各种用途,如将要描述的。 本发明不限于半导体结构的几何形状控制,也可用于具有各种应用或任何离子束敏感材料的几何形状控制的金属化图案的几何形状控制。