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    • 42. 发明申请
    • III/V GROUP NITRIDE SEMICONDUCTOR, PHOTOCATALYTIC SEMICONDUCTOR DEVICE, PHOTOCATALYTIC OXIDATION-REDUCTION REACTION APPARATUS AND EXECUTION PROCESS OF PHOTOELECTROCHEMICAL REACTION
    • III / V族氮化物半导体,光电子半导体器件,光催化氧化还原反应装置和光电化学反应的执行过程
    • US20090045072A1
    • 2009-02-19
    • US12066069
    • 2006-09-06
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • Katsushi FujiiKazuhiro OhkawaMasato OnoTakashi Ito
    • C25B1/00C01B21/00C25B9/00
    • C30B29/403B01J35/004C30B29/406H01L21/0254H01L21/02576H01L21/0262
    • Provided are a III/V group nitride semiconductor causing an oxidation-reduction reaction at a high photoconversion efficiency by irradiation of light, a photocatalytic semiconductor device, a photocatalytic oxidation-reduction reaction apparatus, and an execution process of a photoelectrochemical reaction.In the III/V group nitride semiconductor, the full width at half maximum of an X-ray rocking curve on a catalytic reaction surface thereof is 400 arcsec or less, and a carrier density in a surface layer portion having the catalytic reaction surface is 1.5×1016 cm−3 or more, but 3.0×1018 cm−3 or less. The photocatalytic semiconductor device has the III/V group nitride semiconductor laminated on a substrate. In the photocatalytic oxidation-reduction reaction apparatus, one electrode of a pair of electrodes for electrolysis, which are electrically connected to each other in a state brought into contact with an electrolyte, is composed of the III/V group nitride semiconductor, and a catalytic reaction surface making up the III/V group nitride semiconductor is irradiated with light, thereby causing an oxidation reaction or reduction reaction on the catalytic reaction surface.
    • 提供一种III / V族氮化物半导体,通过光照射,光催化半导体器件,光催化氧化还原反应设备和光电化学反应的执行过程,在光转换效率高的光转换效率下进行氧化还原反应。 在III / V族氮化物半导体中,催化反应面的X射线摇摆曲线的半峰全宽为400arcsec以下,具有催化反应面的表层部的载流子密度为1.5 x1016cm -3以上,3.0×10 18 cm -3以下。 光催化半导体器件具有层叠在基板上的III / V族氮化物半导体。 在光催化氧化还原反应装置中,在与电解质接触的状态下电连接的一对电极的一个电极由III / V族氮化物半导体和催化剂 对构成III / V族氮化物半导体的反应面进行光照射,从而在催化反应面上发生氧化反应或还原反应。
    • 48. 发明授权
    • Photocurable composition
    • 可光固化组合物
    • US08536242B2
    • 2013-09-17
    • US12672262
    • 2008-07-23
    • Hiroji FukuiShunsuke KondoKoji Arimitsu
    • Hiroji FukuiShunsuke KondoKoji Arimitsu
    • C08F2/50C08G18/67G03C1/00G03F7/00
    • C08F2/50C08F2220/1825C08G18/12C08G18/2825C08G18/4804C08G18/8077C08G59/625C08G59/681C08L63/00C08L2312/06C09J133/068G03F7/0045G03F7/038C08F2220/325
    • The present invention provides a photocurable composition which contains a photobase generator capable of generating a satisfactory amount of a base in a high quantum yield when irradiated even with a small quantity of light for a short time, and contains a curable compound that is rapidly cured by the generated base such that the composition is cured into a cured product. The photocurable composition comprises: a photobase generator (A) which is a salt of a carboxylic acid (a1-1) represented by the following formula (1-1) with a basic compound (a2), and a curable compound (B) which has, in one molecule thereof, at least two functional groups selected from among epoxy group, (meth)acryloyl group, isocyanato group, acid anhydride group, and alkoxysilyl group, where R1 to R7 in the above formula (1-1) each are hydrogen or an organic group, R1 to R7 may be the same or different, and two of R1 to R7 may be bonded to each other to form a ring structure.
    • 本发明提供一种光固化性组合物,其含有即使在短时间内用少量光照射即可产生令人满意的高量子产率的碱的光碱性组合物,并且含有通过以下方式快速固化的固化性化合物 生成的碱使得组合物固化成固化产物。 可光固化组合物包括:作为由下式(1-1)表示的羧酸(a1-1)与碱性化合物(a2)的盐的光碱产生剂(A)和可固化化合物(B),其中 在其一个分子中具有选自环氧基,(甲基)丙烯酰基,异氰酸酯基,酸酐基和烷氧基甲硅烷基中的至少两个官能团,其中上式(1-1)中的R 1至R 7各自为 氢或有机基团,R 1至R 7可以相同或不同,并且R 1至R 7中的两个可以彼此键合以形成环结构。