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41. 发明申请

US20200176680A1 ORGANIC ELECTROLUMINESCENT ELEMENT 审中-公开
公开(公告)号：US20200176680A1
公开(公告)日：2020-06-04
申请号：US16636432
申请日：2018-06-12
申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION , JNC CORPORATION
发明人： Takuji HATAKEYAMA , Katsuya MASUDA , Motoki YANAI
IPC分类号： H01L51/00 , C07F5/02 , C09K11/06
摘要： Provided is an organic electroluminescent element including a light emitting layer containing, as a dopant, at least two compounds selected from a compound group consisting of a polycyclic aromatic compound represented by the following general formula (1) and a multimer thereof: wherein the symbols are defined in the specification.

42. 发明授权

US10388536B2 Etching method for SiC substrate and holding container 有权
公开(公告)号：US10388536B2
公开(公告)日：2019-08-20
申请号：US15527622
申请日：2015-11-17
申请人： Toyo Tanso Co., Ltd. , KWANSEI GAKUIN EDUCATIONAL FOUNDATION
发明人： Satoshi Torimi , Masato Shinohara , Youji Teramoto , Norihito Yabuki , Satoru Nogami , Tadaaki Kaneko , Koji Ashida , Yasunori Kutsuma
IPC分类号： H01L21/306 , H01L21/67 , C30B29/36 , C30B33/12 , H01L21/302 , C30B35/00
摘要： Provided is a method for controlling the rate of etching of a SiC substrate based on a composition of a storing container. The etching method of the present invention is for etching the SiC substrate by heating the SiC substrate under Si vapor pressure, in a state where the SiC substrate is stored in a crucible. The crucible is formed of a tantalum metal, and has a tantalum carbide layer provided on an internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The rate of etching of the SiC substrate is controlled based on difference in a composition of the tantalum silicide layer.

43. 发明申请

US20190229277A1 ORGANIC ELECTROLUMINESCENT ELEMENT 审中-公开
公开(公告)号：US20190229277A1
公开(公告)日：2019-07-25
申请号：US16244454
申请日：2019-01-10
申请人： Kwansei Gakuin Educational Foundation , JNC Corporation
发明人： Takuji Hatakeyama , Yuko Yamaga , Daisuke Baba , Kazushi Shiren
IPC分类号： H01L51/00 , H01L51/52 , H01L51/50
摘要： By manufacturing an organic EL element using a material for a light emitting layer including a pyrene-based compound represented by the following formula (2) as a host material and a polycyclic aromatic compound in which a plurality of aromatic rings is linked with a boron atom and a nitrogen atom or an oxygen atom as a dopant material, an organic EL element having, for example, excellent light emission efficiency is provided. In the above formula (2), at least one hydrogen atom in a pyrene moiety may be substituted by an aryl having 6 to 10 carbon atoms or the like. Ar represents an aryl having 14 to 40 carbon atoms or a heteroaryl having 12 to 40 carbon atoms. These groups may be substituted by an aryl having 6 to 10 carbon atoms or the like. s and p each independently represent an integer of 1 or 2. s and p do not simultaneously represent 2. One or more hydrogen atoms in a compound represented by formula (2) may be each independently substituted by a halogen atom, cyano, or a deuterium atom.

44. 发明申请

US20180301629A1 ORGANIC ELECTROLUMINESCENT ELEMENT 审中-公开
公开(公告)号：US20180301629A1
公开(公告)日：2018-10-18
申请号：US15559915
申请日：2016-03-10
申请人： Kwansei Gakuin Educational Foundation , JNC Corporation
发明人： Takuji HATAKEYAMA , Toshihiro KOIKE , Yukihiro FUJITA
IPC分类号： H01L51/00 , C09K11/06 , C09K11/02 , C07F5/02
摘要： The present invention relates to a light-emission-layer material comprising: a novel polycyclic aromatic compound (1) in which a plurality of aromatic rings are linked by a boron atom and a nitrogen atom; and a specific anthracene-based compound (3) that achieves optimum light-emission characteristics in combination with said polycyclic aromatic compound. With this light-emission-layer material having optimum light-emission characteristics, it is possible to provide an excellent organic EL element. Ring A to ring C are an aryl ring or the like, X is a group represented by formula (3-X1), formula (3-X2), or formula (3-X3), and Ar1 to Ar4 are phenyl, a group represented by formula (4), or the like.

45. 发明申请

US20140319539A1 SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND SEMICONDUCTOR WAFER 有权
标题翻译：半导体制造方法和半导体波导
公开(公告)号：US20140319539A1
公开(公告)日：2014-10-30
申请号：US14240710
申请日：2012-08-24
申请人： Tadaaki Kaneko , Noboru Ohtani , Shoji Ushio , Ayumu Adachi , Satoru Nogami
发明人： Tadaaki Kaneko , Noboru Ohtani , Shoji Ushio , Ayumu Adachi , Satoru Nogami
IPC分类号： H01L21/02 , H01L29/16
CPC分类号： H01L21/02664 , C30B19/04 , C30B19/12 , C30B29/36 , H01L21/02378 , H01L21/0243 , H01L21/02447 , H01L21/02529 , H01L21/02625 , H01L21/02658 , H01L21/67109 , H01L29/1608
摘要： A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer (71) is formed on a surface of a substrate (70) made of polycrystalline SiC. In the through hole formation step, through holes (71c) are formed in the carbon layer (71) formed on the substrate (70). In the feed layer formation step, a Si layer (72) and a 3C—SiC polycrystalline layer (73) are formed on a surface of the carbon layer (71). In the epitaxial layer formation step, the substrate (70) is heated so that a seed crystal made of 4H—SiC single crystal is formed on portions of the surface of the substrate (70) that are exposed through the through holes (71c), and a close-spaced liquid-phase epitaxial growth of the seed crystal is caused to form a 4H—SiC single crystal layer.
摘要翻译：制造半导体晶片的方法包括碳层形成步骤，通孔形成步骤，进料层形成步骤和外延层形成步骤。在碳层形成工序中，在由多晶SiC构成的基板（70）的表面上形成碳层（71）。在通孔形成工序中，在形成于基板（70）上的碳层（71）上形成通孔（71c）。在进料层形成步骤中，在碳层（71）的表面上形成Si层（72）和3C-SiC多晶层（73）。在外延层形成步骤中，加热衬底（70），使得在通过通孔（71c）暴露的衬底（70）的表面的部分上形成由4H-SiC单晶制成的晶种，并且引起晶种的紧密间隔的液相外延生长形成4H-SiC单晶层。

46. 发明申请

US20130109833A1 CYCLIC PEPTIDE COMPOUND OR PHARMACOLOGICALLY ACCEPTABLE SALT THEREOF AND METHOD FOR PRODUCING SAME 有权
标题翻译：循环肽化合物或其药学上可接受的盐及其生产方法
公开(公告)号：US20130109833A1
公开(公告)日：2013-05-02
申请号：US13808772
申请日：2011-07-06
申请人： Yohei Hirai , Yoji Okugawa
发明人： Yohei Hirai , Yoji Okugawa
IPC分类号： C07K7/64
CPC分类号： C07K7/64 , A61K38/00 , C07K7/06 , C07K7/56
摘要： Provided are a cyclic peptide compound or a pharmacologically acceptable salt thereof capable of inhibiting parakeratosis of skin, and a method for producing the same. This method comprises subjecting a cyclic peptide compound of Formula (I): or a pharmacologically acceptable salt thereof, wherein Xaa1 and Xaa5 are each optionally substituted Ser, optionally substituted Thr, or optionally substituted Tyr; Xaa2 is optionally substituted Ile, optionally substituted Val, or optionally substituted Leu; Xaa3 and Xaa4 are each optionally substituted Asn, optionally substituted Gln, optionally substituted Asp, or optionally substituted Glu; and R1 is a group of Formula (II): —CO—(CH2)n—NH— (II), or Formula (III): —NH—(CH2)n—CO— (III), wherein n is the same as defined above, and in Formula (I), the linkage between Cys and Cys is a peptide bond or a disulfide bond, and the other linkages are peptide bonds, to cyclization with a compound of Formula (IV): Cys-R1-Xaa1-Xaa2-Xaa3-Xaa4-Xaa5-Cys (IV), wherein, Xaa1, Xaa2, Xaa3, Xaa4, Xaa5, and R1 are the same as defined above.
摘要翻译：提供能够抑制皮肤角化不全的环状肽化合物或其药学上可接受的盐及其制造方法。该方法包括使式（I）的环状肽化合物或其药理学上可接受的盐，其中Xaa1和Xaa5各自任选被取代为Ser，任选取代的Thr或任选取代的Tyr; Xaa2是任选取代的Ile，任选取代的Val或任选取代的Leu; Xaa3和Xaa4各自为任选取代的Asn，任选取代的Gln，任选取代的Asp或任选取代的Glu; 并且R 1是式（II）的基团：-CO-（CH 2）n -NH-（II）或式（III）：-NH-（CH 2）n -CO-（III），其中n相同和式（I）中，Cys和Cys之间的连接是肽键或二硫键，其它键是肽键，以与式（IV）化合物环化：Cys-R1-Xaa1 -Xaa2-Xaa3-Xaa4-Xaa5-Cys（IV），其中，Xaa1，Xaa2，Xaa3，Xaa4，Xaa5和R1与上述定义相同。

47. 发明授权

US12131960B2 Temperature distribution evaluation method, temperature distribution evaluation device, and soaking range evaluation method 有权
公开(公告)号：US12131960B2
公开(公告)日：2024-10-29
申请号：US17606743
申请日：2020-04-24
申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION , TOYOTA TSUSHO CORPORATION
发明人： Tadaaki Kaneko , Daichi Dojima , Koji Ashida , Tomoya Ihara
IPC分类号： G01B21/08 , G01K1/02 , H01L21/66 , H01L21/67
CPC分类号： H01L22/12 , G01B21/08 , G01K1/026 , H01L21/67248 , H01L21/67253
摘要： To provide a new temperature distribution evaluation method, a temperature distribution evaluation device, and a soaking range evaluation method, as the temperature distribution evaluation method which evaluates a temperature distribution of a heating area 40A provided in a heating device 40, the present invention is a temperature distribution evaluation method which, in the heating area 40A, heats a semiconductor substrate 10 and a transmitting and receiving body 20 for transporting a raw material to and from the semiconductor substrate 10, and evaluates a temperature distribution of the heating area 40A on the basis of a substrate thickness variation amount A of the semiconductor substrate 10. Accordingly, temperature distribution evaluation can be implemented for a high temperature area at 1600-2200° C. or the like at which it is hard to evaluate the temperature distribution due to the limit of a thermocouple material.

48. 发明公开

US20240241064A1 METHOD FOR EVALUATING WORK-MODIFIED LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE 审中-公开
公开(公告)号：US20240241064A1
公开(公告)日：2024-07-18
申请号：US18262167
申请日：2022-01-14
申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION , YGK CORPORATION , TOYOTA TSUSHO CORPORATION
发明人： Tadaaki KANEKO , Yoshinobu NAKURA , Kazunobu ASAKAWA , Kiyoshi KOJIMA
IPC分类号： G01N21/95 , H01L21/02 , H01L21/66
CPC分类号： G01N21/9505 , H01L21/02024 , H01L22/12
摘要： An object of the present invention is to provide a novel technique capable of evaluating a subsurface damaged layer without destroying a semiconductor single crystal. As means for solving this object, the present invention causing a laser light to be incident from a surface of a semiconductor single crystal substrate to evaluate the subsurface damaged layer of the semiconductor single crystal substrate based on an intensity of a scattered light which is scattered inside the semiconductor single crystal substrate.

49. 发明授权

US11972949B2 SiC substrate manufacturing method and manufacturing device, and method for reducing work-affected layer in sic substrate 有权
公开(公告)号：US11972949B2
公开(公告)日：2024-04-30
申请号：US17436307
申请日：2020-03-03
申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION , TOYOTA TSUSHO CORPORATION
发明人： Tadaaki Kaneko , Natsuki Yoshida , Kazufumi Aoki
IPC分类号： H01L21/04 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/0445 , H01L21/3065 , H01L21/67069
摘要： A device for manufacturing a SiC substrate, in which the occurrence of a work-affected layer is reduced, or from which a work-affected layer is removed, comprises: a main container which can accommodate a SiC substrate and which generates, by heating, a vapor pressure of a vapor-phase species including elemental Si and a vapor-phase species including elemental C in an internal space; and a heating furnace for accommodating the main container, generating a vapor pressure of the vapor-phase species including elemental Si in the internal space, and heating so that a temperature gradient is formed; the main container having an etching space formed by causing a portion of the main container disposed on the low-temperature side of the temperature gradient and the SiC substrate to face each other in a state in which the SiC substrate is disposed on the high-temperature side of the temperature gradient.

50. 发明公开

US20230392282A1 METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR SUPPRESSING INTRODUCTION OF DISLOCATION INTO ALUMINUM NITRIDE GROWTH LAYER 审中-公开
公开(公告)号：US20230392282A1
公开(公告)日：2023-12-07
申请号：US17919174
申请日：2021-03-30
申请人： KWANSEI GAKUIN EDUCATIONAL FOUNDATION , TOYO ALUMINIUM KABUSHIKI KAISHA , TOYOTA TSUSHO CORPORATION
发明人： Tadaaki KANEKO , Daichi DOJIMA , Taku MURAKAWA , Moeko MATSUBARA , Yoshitaka NISHIO
IPC分类号： C30B23/02 , C30B29/40
CPC分类号： C30B23/025 , C30B29/403
摘要： A problem addressed by the present invention is to provide a novel technique with which is possible to suppress the introduction of dislocation into a growth layer. The present invention, which solves the above problem, is a method for producing an aluminum nitride substrate, the method including a processing step for removing part of silicon carbide substrate and forming a pattern that includes a minor angle, and a crystal growth step for forming an aluminum nitride growth layer on the silicon carbide substrate on which the patter has been formed. The present invention is also a method for suppressing the introduction of dislocation into the aluminum nitride growth layer, the method including a processing step for removing part of the silicon carbide substrate and forming a pattern that includes a minor angle before forming a growth layer on a base substrate.

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