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31. 发明授权

US4642227A Reactor for producing large particles of materials from gases 失效
标题翻译：用于从气体中生产大量物质的反应器
公开(公告)号：US4642227A
公开(公告)日：1987-02-10
申请号：US572604
申请日：1984-01-20
申请人： Richard C. Flagan , Mohammed K. Alam
发明人： Richard C. Flagan , Mohammed K. Alam
IPC分类号： B01J6/00 , B01J19/00 , C01B33/027 , C01B33/029 , C30B15/00 , C01B33/02
CPC分类号： C01B33/029 , B01J19/0013 , B01J6/008 , C01B33/027 , C30B15/002 , B01J2219/00123
摘要： A method and apparatus is disclosed for producing large particles of material from gas, or gases, containing the material (e.g., silicon from silane) in a free-space reactor comprised of a tube (20) and controlled furnace (25). A hot gas is introduced in the center of the reactant gas through a nozzle (23) to heat a quantity of the reactant gas, or gases, to produce a controlled concentration of seed particles (24) which are entrained in the flow of reactant gas, or gases. The temperature profile (FIG. 4) of the furnace is controlled for such a slow, controlled rate of reaction that virtually all of the material released condenses on seed particles and new particles are not nucleated in the furnace. A separate reactor comprised of a tube (33) and furnace (30) may be used to form a seed aerosol which, after passing through a cooling section (34) is introduced in the main reactor tube (34) which includes a mixer (36) to mix the seed aerosol in a controlled concentration with the reactant gas or gases.
摘要翻译：公开了用于在由管（20）和受控炉（25）组成的自由空间反应器中从含有材料（例如，来自硅烷的硅）的气体或气体产生大颗粒材料的方法和装置。通过喷嘴（23）将热气体引入反应气体的中心，以加热一定量的反应气体或气体，以产生控制浓度的种子颗粒（24），这些颗粒被夹带在反应气体流中，或气体。炉子的温度分布（图4）被控制在如此缓慢的受控的反应速率下，几乎所有的释放的材料在种子颗粒上冷凝并且新的颗粒在炉中没有成核。可以使用由管（33）和炉（30）组成的单独的反应器来形成种子气溶胶，其在通过冷却段（34）被引入主反应器管（34）之后，其包括混合器（36 ）将受控浓度的种子气溶胶与反应物气体或气体混合。

32. 发明授权

US4377564A Method of producing silicon 失效
标题翻译：生产硅的方法
公开(公告)号：US4377564A
公开(公告)日：1983-03-22
申请号：US253557
申请日：1981-04-13
申请人： Reinhard Dahlberg
发明人： Reinhard Dahlberg
IPC分类号： B01J12/00 , C01B31/36 , C01B33/02 , C01B33/027 , C01B33/06 , C23C16/513 , C30B25/02 , C30B25/18 , H01L31/18 , H05H1/34 , H05H1/42
CPC分类号： C30B29/06 , B01J12/002 , C01B31/36 , C01B33/02 , C01B33/06 , C23C16/513 , C30B25/18 , H01L31/1804 , H05H1/3405 , H05H1/42 , C01P2002/54 , H05H2001/3484 , Y02E10/547 , Y02P70/521
摘要： A method of producing silicon comprising producing a plasma in a gas flow laden with at least one silicon compound so that the silicon compound is reduced or decomposed to silicon and transporting the silicon which may have reacted with other material if present in the plasma and reaction products out of the plasma in the gas flow.
摘要翻译：一种生产硅的方法，包括在载有至少一种硅化合物的气流中产生等离子体，使得硅化合物被还原或分解成硅并输送可能与其它材料反应的硅（如果存在于等离子体中）和反应产物在气体流中的等离子体中。

33. 发明授权

US4139438A Arc heater production of silicon involving alkali or alkaline-earth metals 失效
公开(公告)号：US4139438A
公开(公告)日：1979-02-13
申请号：US891992
申请日：1978-03-31
申请人： Maurice G. Fey , Francis J. Harvey, II , Jack McDonald
发明人： Maurice G. Fey , Francis J. Harvey, II , Jack McDonald
IPC分类号： C01B33/02 , C01B33/027 , C01B33/033 , B01K1/00
CPC分类号： C01B33/033
摘要： A process for producing high purity silicon characterized by the employment of an electric arc heater into which a silicon halide is injected together with a metal reductant such as an alkali metal or an alkaline-earth metal which are reacted together by projecting them tangentially into a reaction chamber to cause the formation of liquid silicon and a gaseous metal halide salt which are separated in a suitable manner such as centrifugally or by condensation.

34. 发明授权

US3751539A Use of vapor deposition to form a hollow tubular body closed on one end 失效
标题翻译：使用蒸汽沉积形成一个封闭的中空管体
公开(公告)号：US3751539A
公开(公告)日：1973-08-07
申请号：US3751539D
申请日：1971-10-26
申请人： SIEMENS AG
发明人： REUSCHEL K , KERSTING A
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/44 , C30B29/60 , H01L21/205 , B01J17/30 , B01J17/32
CPC分类号： C23C16/01
摘要： BODY IS COVERED BY A WAFER FROM THE SAME SEMICONDUCTOR MATERIAL WHOSE SHAPE CORRESPONDS TO THE OPEN SIDE. THEREAFTER, THE SEMICONDUCTOR MATERIAL IS PRECIPITATED FROM THE GASEOUS COMPOUND UNTIL THE DESIRED LAYER THICKNESS AND A GAS-TIGHT CONNECTION IS OBTAINED BETWEEN THE LAYER AND THE COVERING SEMICONDUCTOR MATERIAL. THE SECOND METHOD PRECIPITATES A SEMICONDUCTOR LAYER AND THEREAFTER WELDS A COVER ON THE TUBE.

DESCRIBED ARE TWO METHODS OF PRODUCING A HOLLOW BODY, COMPRISED OF SEMICONDUCTOR MATERIAL, ESPECIALLY SILICON, BY PRECIPITATION FROM A GASEOUS COMPOUND OF SAID SEMICONDUCTOR MATERIAL UPON THE SURFACE OF A HEATED CARRIER BODY, WHICH AFTER A SUFFICIENTLY THICK LAYER OF SEMICONDUCTOR MATERIAL HAS BEEN PRECIPITATED, IS REMOVED AGAIN WITHOUT DAMAGING SAID LAYER. ONE METHOD IS CHARACTERIZED BY USING A HOLLOW CARRIER BODY, OPEN AT LEAST AT TWO OPPOSITE SIDES. PRIOR TO THE PRECIPITATION OF THE SEMICONDUCTOR MATERIAL, ONE OF THE OPEN SIDES OF THE CARRIER

35. 发明申请

US20210316268A1 FINE PARTICLE MANUFACTURING APPARATUS AND FINE PARTICLE MANUFACTURING METHOD 有权
公开(公告)号：US20210316268A1
公开(公告)日：2021-10-14
申请号：US17272882
申请日：2019-09-02
申请人： NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY , NISSHIN SEIFUN GROUP INC.
发明人： Yasunori TANAKA , Kotaro SHIMIZU , Shiori SUEYASU , Shu WATANABE , Tomoya WATANABE , Keitaro NAKAMURA
IPC分类号： B01J19/08 , C01B33/027 , H05H1/30 , B01J2/04 , B22F9/14
摘要： Provided are a fine particle manufacturing apparatus and a fine particle manufacturing method, which manufacture smaller fine particles. The fine particle manufacturing apparatus has: a raw material supply unit that supplies raw materials for producing fine particles into a thermal plasma flame; a plasma torch in which the thermal plasma flame is generated and the raw materials supplied by the raw material supply unit is evaporated by the thermal plasma flame to form a mixture in a gaseous state; a plasma generation unit that generates the thermal plasma flame inside the plasma torch; and a gas supply unit that supplies quenched gas to the thermal plasma flame, wherein the gas supply unit supplies the quenched gas with time modulation of the supply amount of the quenched gas.

36. 发明授权

US11117807B2 Method of making aluminum-free neopentasilane 有权
公开(公告)号：US11117807B2
公开(公告)日：2021-09-14
申请号：US16004802
申请日：2018-06-11
申请人： Jiangsu Nata Opto-Electronic Materials Co. Ltd.
发明人： Xiaobing Zhou
IPC分类号： C01B33/027 , C23C16/40 , C01B33/04 , C23C16/34 , C23C16/455 , C01B6/24 , C09D1/00 , C23C16/50
摘要： A method of making neopentasilane, the method comprising:
contacting perchloroneopentasilane with a reductive effective amount of an alkali metal aluminum hydride in an alkylaluminum compound of formula RxAlCl3-x, where R is alkyl having from at least 5 carbon atoms, x is an integer from 1 to 3, and the alkylaluminum compound has a boiling point of at least 250° C., at conditions sufficient to reduce the perchloroneopentasilane, to form a reaction product mixture comprising neopentasilane, and separating the neopentasilane from the product mixture to form a neopentasilane isolate.

37. 发明授权

US11040989B2 Tris(disilanyl)amine 有权
公开(公告)号：US11040989B2
公开(公告)日：2021-06-22
申请号：US15776851
申请日：2016-12-16
申请人： Jiangsu Nata Opto-Electronic Materials Co. Ltd.
发明人： Brian D. Rekken , Xiaobing Zhou , Byung K. Hwang , Barry Ketola
IPC分类号： C07F7/10 , C07F7/20 , C07F7/02 , B01J31/14 , C01B21/087 , C01B33/027 , C08G77/62 , C23C16/455 , H01L21/02 , C07F7/08 , C23C16/34
摘要： A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

38. 发明授权

US10899626B2 Fluidized bed reactor and method for producing granular polysilicon 有权
公开(公告)号：US10899626B2
公开(公告)日：2021-01-26
申请号：US14889347
申请日：2014-04-28
申请人： WACKER CHEMIE AG
发明人： Simon Pedron , Gerhard Forstpointner
IPC分类号： B01J4/00 , B01J8/18 , C01B33/03 , C01B33/027 , B01J8/00 , B01J8/24 , C23C16/24 , C23C16/442
摘要： The fluidized bed process for preparing polysilicon by chemical vapor deposition is improved by positioning at least one Laval nozzle upstream from a gas inlet into the reactor.

39. 发明授权

US10875877B2 Method for making an organoaminosilane; a method for making a silylamine from the organoaminosilane 有权
公开(公告)号：US10875877B2
公开(公告)日：2020-12-29
申请号：US16061461
申请日：2016-12-16
申请人： Dow Silicones Corporation
发明人： Barry M. Ketola , Jesse A. Maddock , Brian D. Rekken , Michael D. Telgenhoff , Xiaobing Zhou
IPC分类号： C07F7/02 , C07F7/10 , C07F7/20 , B01J31/14 , C01B21/087 , C01B33/027 , C08G77/62 , C23C16/455 , H01L21/02 , C07F7/08 , C23C16/34
CPC分类号： C07F7/10 , B01J31/146 , C01B21/087 , C01B33/027 , C07F7/025 , C07F7/0803 , C07F7/20 , C08G77/62 , C23C16/345 , C23C16/45553 , H01L21/02208 , B01J2231/005 , B01J2531/002
摘要： A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

40. 发明授权

US10525426B2 Gas distributor for a Siemens reactor 有权
公开(公告)号：US10525426B2
公开(公告)日：2020-01-07
申请号：US14782855
申请日：2014-03-19
申请人： Wacker Chemie AG
发明人： Friedrich Popp , Christian Kutza , Martin Roeckl , Tobias Weiss
IPC分类号： B01J4/00 , B01J19/00 , B01J19/24 , B05B1/00 , B05B1/14 , B05B1/20 , C01B33/00 , C01B33/02 , C01B33/021 , C01B33/027 , C01B33/035
摘要： A gas distribution system for a polysilicon deposition reactor eliminates or mitigates the problems associated with prior art distribution systems employs at least two segments which are gas-tightly connected to one another by readily detachable fasteners, with at least one gas inlet opening and one gas outlet opening, the gas distributor of the system being mounted by readily detachable fasteners to the polysilicon reactor.

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