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31. 发明申请

US20040147136A1 Method for making the gate dielectric layer by oxygen radicals and hydroxyl radicals mixture 审中-公开
标题翻译：通过氧自由基和羟基自由基混合制备栅极电介质层的方法
公开(公告)号：US20040147136A1
公开(公告)日：2004-07-29
申请号：US10352920
申请日：2003-01-29
申请人： Macronix International Co., Ltd.
发明人： Cheng-Shun Chen , Yun-Chi Yang , Shu-Ya Hsu , Wei-Wen Chen , June-Min Yao
IPC分类号： H01L021/336 , H01L021/31 , H01L021/469
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02164 , H01L21/022 , H01L21/02249 , H01L21/02255 , H01L21/02323 , H01L21/02337 , H01L21/28202 , H01L21/31662 , H01L29/518
摘要： This invention relates to a method for making the gate dielectric layer, more particularly, to the method for making the interface between the gate dielectric layer and silicon substrate by using oxygen radicals and hydroxyl radicals. In the method, we send the wafers, which has passed through the cleaning process for the silicon substrate, to the chamber at first and then transmit the first reaction gas, which comprises the nitric monoxide and the oxygen or comprises the nitric monoxide and nitrogen, to the chamber to form a silicon nitride layer or a silicon oxynitride layer on the first surface of the silicon substrate to be a gate. Next, we transmit the second reaction gas, which comprises the oxygen and the hydrogen, to the chamber and make the second reaction gas to be dissociated into the oxygen radicals and the hydroxyl radicals. The oxygen radicals enter to the contacting surface between the silicon substrate and the silicon oxynitride layer by diffusing ways and pass through the post anneal process to form an interface on the contacting surface between the gate dielectric layer and the silicon substrate to produce the smaller volume of the semiconductor devices.
摘要翻译：本发明涉及一种用于制造栅极电介质层的方法，更具体地说，涉及通过使用氧自由基和羟基自由基来形成栅介电层和硅衬底之间的界面的方法。在该方法中，首先将已经通过硅衬底的清洁处理的晶片发送到腔室，然后传输包含一氧化氮和氧气或包含一氧化氮和氮气的第一反应气体，以在硅衬底的第一表面上形成氮化硅层或氧氮化硅层作为栅极。接下来，将包含氧和氢的第二反应气体传输到室，并使第二反应气体解离成氧自由基和羟基。氧自由基通过扩散方式进入硅衬底和氮氧化硅层之间的接触表面，并通过后退火工艺以在栅介质层和硅衬底之间的接触表面上形成界面，以产生较小体积的半导体器件。

32. 发明申请

US20040137755A1 System and method for hydrogen-rich selective oxidation 失效
标题翻译：富氢选择氧化的系统和方法
公开(公告)号：US20040137755A1
公开(公告)日：2004-07-15
申请号：US10456850
申请日：2003-06-06
申请人： Thermal Acquisition Corp. , Aviza Technology, Inc.
发明人： Robert B. Herring , Cole Porter , Travis Dodwell , Ed Nazareno , Chris Ratliff , Anindita Chatterji
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/32105 , H01L21/28061 , H01L21/28247 , H01L21/67109 , H01L21/67248 , H01L21/67253 , H01L29/4941
摘要： The present invention relates generally to semiconductor fabrication. More particularly, the present invention relates to system and method of selectively oxidizing one material with respect to another material formed on a semiconductor substrate. A hydrogen-rich oxidation system for performing the process are provided in which innovative safety features are included to avoid the dangers to personnel and equipment that are inherent in working with hydrogen-rich atmospheres.
摘要翻译：本发明一般涉及半导体制造。更具体地，本发明涉及相对于在半导体衬底上形成的另一种材料选择性地氧化一种材料的系统和方法。提供了一种用于执行该方法的富氢氧化系统，其中包括创新的安全特征以避免在富含氢气氛的情况下固有的人员和设备的危险。

33. 发明申请

US20040137645A1 Method of forming thin oxidation layer by cluster ion beam 失效
标题翻译：通过簇离子束形成薄氧化层的方法
公开(公告)号：US20040137645A1
公开(公告)日：2004-07-15
申请号：US10341282
申请日：2003-01-13
申请人： Veeco Instruments Inc.
发明人： Chih-Ching Hu , Adrian J. Devasahayam , Patricia L. Cox , Chih-Ling Lee , Ming Mao , Jacques C.S. Kools
IPC分类号： H01L021/00 , H01L021/31 , H01L021/469
CPC分类号： C23C14/5833 , C23C8/02 , C23C26/00 , C23C28/00 , G11B5/84
摘要： A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by cluster ion beam (CIB) oxidation. Specifically, the method comprises depositing a first magnetic layer on a substrate, then depositing a nonmagnetic metal layer on the first magnetic layer. At least a top surface of the nonmagnetic layer is oxidized by CIB oxidation. In one embodiment, only a top surface portion is oxidized such that a nano-oxide layer (NOL) is formed on a nonmagnetic conductive layer. In another embodiment, the nonmagnetic metal layer is oxidized throughout it's thickness such that the layer is converted to a nonmagnetic insulating film. After oxidation, a second magnetic layer is deposited on the oxidized layer. Oxidizing by cluster ion beam oxidation advantageously comprises mixing a pressurized inert carrier gas with oxygen gas to form a gas mixture and passing the gas mixture into a low pressure vacuum to produce a supersonic gas jet, whereby expansion occurs in the jet to cause formation of clusters of inert gas and oxygen atoms and molecules. The clusters are then ionized and focused into a cluster ion beam and accelerated toward the top surface of the nonmagnetic metal layer to bombard the top surface and react the ionized oxygen atoms and molecules with at least the top surface of the nonmagnetic metal layer.
摘要翻译：在衬底上形成诸如TMR元件或自旋阀元件的薄膜磁性元件的方法，其中非磁性金属层的至少表面部分被簇离子束（CIB）氧化氧化。具体地，该方法包括在衬底上沉积第一磁性层，然后在第一磁性层上沉积非磁性金属层。非磁性层的至少顶表面被CIB氧化氧化。在一个实施例中，仅氧化顶表面部分，使得在非磁性导电层上形成纳米氧化物层（NOL）。在另一个实施例中，非磁性金属层在其厚度上被氧化，使得该层被转换成非磁性绝缘膜。氧化后，在氧化层上沉积第二磁性层。通过簇离子束氧化进行氧化有利地包括将加压的惰性载气与氧气混合以形成气体混合物并将气体混合物通入低压真空中以产生超音速气体射流，从而在射流中发生膨胀以形成团簇的惰性气体和氧原子和分子。然后将这些簇电离并聚焦成簇离子束，并朝向非磁性金属层的顶表面加速以轰击顶表面，并使至少离子化的氧原子和分子至少与非磁性金属层的顶表面反应。

34. 发明申请

US20040127070A1 Additives to prevent degradation of alkyl-hydrogen siloxanes 有权
标题翻译：用于防止烷基氢硅氧烷降解的添加剂
公开(公告)号：US20040127070A1
公开(公告)日：2004-07-01
申请号：US10665739
申请日：2003-09-18
申请人： Arch Specialty Chemicals, Inc.
发明人： Daniel J. Teff , Gregory B. Smith , John L. Chagolla , Tim S. Andreyka
IPC分类号： C09K003/00 , H01L021/31
CPC分类号： C23C16/4402 , C08G77/12 , C08K5/13 , C08L83/04 , Y10T428/31663
摘要： An organohydrosiloxane composition comprising: a) one or more organohydrosiloxane compounds, each having at least one nullnullHSiRnullOnullnull unit, wherein RnullC1-C18 linear, branched, or cyclic alkyl, C1-C18 linear, branched, or cyclic alkoxy, or substituted or unsubstituted aryl, and b) an antioxidant compound shown in Formula (1) 1 wherein the antioxidant compound is a phenolic compound and is present in a concentration from about 1 ppm to about 5,000 ppm and wherein R1 through R5 can each independently be H, OH, C1-C18 linear, branched, or cyclic alkyl, C1-C18 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl. The compositions of present invention exhibit stability and significantly extend the shelf life of organohydrosiloxane products and allow greater flexibility in handling these products in chemical processes or semiconductor manufacturing. The resulting stabilization of siloxanes prevents the possibility of complete polymerization (i.e., solidification) of product in chemical delivery lines or valves, which lowers equipment maintenance and costs and reduces time the machinery is out of production.
摘要翻译：一种有机氢硅氧烷组合物，其包含：a）一种或多种有机氢化硅氧烷化合物，其各自具有至少一个[-HSi-O-]单元，其中R = C1-C18直链，支链或环状烷基，C1-C18直链，支链或环状烷氧基或取代或未取代的芳基，和b）式（1）所示的抗氧化剂化合物，其中抗氧化剂化合物为酚类化合物，其浓度为约1ppm至约5,000ppm，并且其中R 1至R 各自独立地为H，OH，C 1 -C 18直链，支链或环状烷基，C 1 -C 18直链，支链或环状烷氧基或取代或未取代的芳基。本发明的组合物表现出稳定性并且显着地延长了有机氢硅氧烷产品的保存期限，并且在化学工艺或半导体制造中处理这些产品时具有更大的灵活性。所得的硅氧烷稳定化防止化学输送管线或阀门中产物完全聚合（即固化）的可能性，这降低了设备维护和成本，并缩短了机器停产的时间。

35. 发明申请

US20040127068A1 Semiconductor device fabrication method and semiconductor fabrication control method 有权
公开(公告)号：US20040127068A1
公开(公告)日：2004-07-01
申请号：US10695650
申请日：2003-10-29
发明人： Masayuki Furuhashi , Mitsuaki Hori
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L21/3081 , H01L21/02052 , H01L21/3003 , H01L21/30604 , H01L21/324
摘要： The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10, the method further comprises, before the step of forming the gate insulation film, the step of forming an insulation film 12, covering a first side (upper side) and a second side (underside) of the semiconductor substrate 10, the step of etching off the insulation film 12 on the first side of the semiconductor substrate 10, and the step of annealing the semiconductor substrate 10 with the insulation film 12 present on the second side of the semiconductor substrate 10. The semiconductor film 12 on the second side of the semiconductor substrate 10 is removed, and the semiconductor substrate 10 is heat-treated with the insulation film 12 present on the second side of the semiconductor substrate 10, whereby even when the annealing is performed at high temperature, the sublimation of semiconductor constituent atoms from the second side of the semiconductor substrate 10 can be prevented. Accordingly, the adhesion of the semiconductor constituent atoms to the temperature sensor, etc. can be prevented, which permits semiconductor devices to be fabricated without complicated maintenance. Thus, semiconductor devices can be fabricated with high fabrication efficiency.

36. 发明申请

US20040127065A1 PATTERN AND ITS FORMING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE 有权
标题翻译：图形及其液晶显示装置的形成方法
公开(公告)号：US20040127065A1
公开(公告)日：2004-07-01
申请号：US10422745
申请日：2003-04-25
申请人： LG.Philips LCD Co., Ltd.
发明人： So-Haeng Cho , Yong-Jin Cho , Dong-Hoon Lee
IPC分类号： H01L021/31 , H01L021/469
CPC分类号： H01L27/1288 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/161 , H01L27/1214 , H01L51/0004
摘要： A method for forming a pattern includes filling a resist in a groove of a clichnull corresponding to the position of the pattern to be formed, transferring the resist which is filled in the groove onto a printing roll by rotating the printing roll in a direction parallel to the longest portion lengthwise direction of a pattern formed in clichnull, and applying the resist on an etching object layer by rotating the printing roll along the etching object layer on a substrate.
摘要翻译：一种用于形成图案的方法包括：将抗蚀剂填充在与要形成的图案的位置相对应的底片的凹槽中，将填充在凹槽中的抗蚀剂转移到印刷辊上，使印刷辊沿平行于在底片中形成的图案的最长部分长度方向，并且通过沿着基板上的蚀刻对象层旋转印刷辊将抗蚀剂施加在蚀刻对象层上。

37. 发明申请

US20040127059A1 Clean gas injector system for reactor chamber 有权
标题翻译：用于反应室的清洁气体喷射器系统
公开(公告)号：US20040127059A1
公开(公告)日：2004-07-01
申请号：US10278791
申请日：2002-10-24
发明人： Ignacio Blanco-Rivera , Nathan J. Kruse , Sarah Hartwig
IPC分类号： H01L021/31
CPC分类号： H01L21/67017 , C23C16/4405 , C23C16/45578 , H01L21/67028 , Y10S156/916
摘要： An improved Novellus Speed clean gas reactor chamber is described. An evacuation port of the Novellus SPEED Chamber is at one location in the chamber to remove injected cleaning gas from the chamber and there is a single input for cleaning gas connection into the chamber. In accordance an improvement a plurality of clean gas injectors is positioned on an adapter in the chamber and connected to the single input gas connection for distributing the cleaning gas in the chamber with the injectors spaced away from the evacuation port. The adapter is a U-shaped adapter and is positioned in the chamber with the adapter connected at the base to the single input gas connection. The adapter has two semicircular branch legs extending in opposite directions about the chamber to free ends that are connected to gas injectors. The free ends with the injectors are located in the chamber almost on the opposite end of the chamber from the evacuation port. Each of the two branch legs includes a second injector midway along the branch legs between the free ends and point of the branch to provide four injectors to evenly distribute the clean gas in the chamber.
摘要翻译：描述了改进的Novellus Speed清洁气体反应器室。 Novellus SPEED室的疏散口位于腔室的一个位置，以从腔室中除去注入的清洁气体，并且存在用于清洁气体连接到腔室中的单个输入口。根据改进，多个清洁气体喷射器位于腔室中的适配器上并且连接到单个输入气体连接部，用于将清洁气体分配在腔室中，其中喷射器与排气口间隔开。适配器是U形适配器，并且位于腔室中，适配器在基座处连接到单个输入气体连接。适配器具有两个半圆形支腿，该支腿在相对于室的相反方向上延伸以连接到气体喷射器的自由端。喷射器的自由端位于腔室中几乎位于与排气口相对的腔室的相对端。两个分支腿中的每一个在沿自由端和分支点之间的分支腿的中间部分包括第二注射器，以提供四个喷射器以将清洁气体均匀分布在腔室中。

38. 发明申请

US20040126967A1 Method of manufacturing non-volatile memory device 审中-公开
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20040126967A1
公开(公告)日：2004-07-01
申请号：US10636050
申请日：2003-08-07
发明人： Kwang Chul Joo
IPC分类号： H01L021/336 , H01L021/31 , H01L021/469
CPC分类号： H01L28/84 , H01L21/0217 , H01L21/02183 , H01L21/02247 , H01L21/02271 , H01L21/02337 , H01L21/3144 , H01L21/3185 , H01L29/40114
摘要： Disclosed is a method of manufacturing the non-volatile memory device. The method comprises the step of forming a floating gate on a semiconductor substrate, implementing nitrification treatment for the top surface of the floating gate, forming a silicon nitride film on the floating gate experienced by the nitrification treatment, forming a metallic oxide film on the silicon nitride film, implementing annealing in order to supplement oxygen for the metallic oxide film, and forming a control gate on the metallic oxide film. As the leakage current due to irregularity of the interface is prevented, electrical characteristics could be improved. Furthermore, the process equipment used in the existing DRAM (dynamic random access memory) capacitor could be utilized intact.
摘要翻译：公开了一种制造非易失性存储器件的方法。该方法包括在半导体衬底上形成浮栅的步骤，对浮栅的上表面进行硝化处理，在经过硝化处理的浮栅上形成氮化硅膜，在硅上形成金属氧化物膜氮化物膜，实现退火以补充金属氧化物膜的氧，并在金属氧化物膜上形成控制栅极。由于防止由于界面的不规则性引起的漏电流，因此可以提高电特性。此外，现有DRAM（动态随机存取存储器）电容器中使用的处理设备可以被完整地利用。

39. 发明申请

US20040124446A1 PECVD air gap integration 失效
标题翻译： PECVD气隙整合
公开(公告)号：US20040124446A1
公开(公告)日：2004-07-01
申请号：US10334195
申请日：2002-12-28
发明人： Wilmer F. Borger , Jeffrey T. West , Ebrahim Andideh
IPC分类号： H01L029/80 , H01L031/112 , H01L021/31
CPC分类号： H01L21/0214 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/7682
摘要： A series of conductive layers separated by interlayer gaps is formed adjacent a substrate layer, the conductive layer and interlayer gap dimensions defining aspect ratios for trenches between the conductive layers. A layer of dielectric material is deposited over the conductive layers using plasma enhanced chemical vapor deposition. Trenches having aspect ratios within specified geometric categories are incompletely filled, leaving interlayer voids which may have desirable dielectric properties.
摘要翻译：在衬底层附近形成由层间间隔分开的一系列导电层，导电层和层间间隙尺寸限定导电层之间沟槽的纵横比。使用等离子体增强化学气相沉积在导电层上沉积介电材料层。具有特定几何类别的长宽比的沟槽不完全填充，留下可能具有所需介电特性的层间空隙。

40. 发明申请

US20040121619A1 Multipoint minute electrode, device for measuring a living organism voltage, method for fabricating the multipoint minute electrode, and method for fabricating the living organism voltage-measuring device 审中-公开
标题翻译：多点微电极，活体电压测定装置，多点微电极的制造方法以及生物体电压测定装置的制造方法
公开(公告)号：US20040121619A1
公开(公告)日：2004-06-24
申请号：US10653218
申请日：2003-09-03
申请人： HOKKAIDO UNIVERSITY
发明人： Hiroshi Yokoi , Takahiro Kawashima , Eiji Makino , Takayuki Shibata , Yukinori Kakazu
IPC分类号： H01L021/31
CPC分类号： A61B5/04001
摘要： On a given substrate are successively formed electrode patterns constituting electrode wirings for measuring points, respectively. Then, an insulating layer and an underlayer covering the electrode patterns are etched and removed to expose the substrate, which suffers from anisotropic etching using a given etching solution, to fabricate a multipoint minute electrode with a sharpened probe and a supporter for the probe.
摘要翻译：在给定基板上分别依次形成构成用于测量点的电极布线的电极图案。然后，对覆盖电极图案的绝缘层和下层进行蚀刻除去，以露出使用给定蚀刻溶液进行各向异性蚀刻的衬底，以制造具有用于探针的尖锐探针和支撑体的多点微电极。

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