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    • 39. 发明授权
    • Nanometric structure and corresponding manufacturing method
    • 纳米结构及相应的制造方法
    • US07834344B2
    • 2010-11-16
    • US11215296
    • 2005-08-30
    • Danilo MascoloGianfranco CerofoliniGianguido Rizzotto
    • Danilo MascoloGianfranco CerofoliniGianguido Rizzotto
    • H01L25/10H01L45/00
    • H01L51/0021H01L51/0595Y10S977/712Y10S977/781
    • A hosting structure of nanometric components is described advantageously comprising: a substrate; n array levels on said substrate, with n≧2, arranged consecutively on growing and parallel planes, each including a plurality of conductive spacers alternated with a plurality of insulating spacers and substantially perpendicular to said substrate, with definition between consecutive conductive spacers of at least a gap, conductive spacers of consecutive array levels lying on distinct and parallel planes, said gaps of different array levels being at least partially aligned along a direction substantially perpendicular to said substrate with definition of a plurality of transversal hosting seats extended along said direction and suitable for hosting at least a nanometric component. A nanometric electronic device is also described comprising such a hosting structure and a method for realizing it.
    • 描述了纳米组件的托管结构,其有利地包括:衬底; 所述衬底上具有n≥2的n个阵列电平在生长和平行平面上连续布置,每个平面包括多个导电间隔物,其与多个绝缘间隔物交替并且基本上垂直于所述衬底,并且在至少 间隙,位于不同平行平面上的连续阵列电平的导电间隔物,所述不同阵列电平的所述间隙沿着基本上垂直于所述衬底的方向至少部分地对准,定义了沿着所述方向延伸的多个横向主持座,并且适合 用于托管至少一个纳米元件。 还描述了一种纳米电子设备,其包括这样的托管结构和用于实现它的方法。