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    • 40. 发明授权
    • Integration of transistors with vertical cavity surface emitting lasers
    • 晶体管与垂直腔表面发射激光器的集成
    • US5283447A
    • 1994-02-01
    • US823496
    • 1992-01-21
    • Gregory R. OlbrightJack L. Jewell
    • Gregory R. OlbrightJack L. Jewell
    • H01S5/00H01L27/15H01L31/153H01S5/026H01S5/042H01S5/183H01S5/34H01L33/00
    • H01S5/18341H01L27/15H01L31/153H01S5/0261H01S5/0262H01S5/0425H01S5/18305H01S5/18308H01S5/3428H01S5/423
    • Optoelectronic integrated circuits are disclosed comprising a vertical-cavity surface emitting laser (VCSEL) and a transistor. The VCSEL comprises a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible range which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping the regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Embodiments are disclosed which integrate the VCSEL with bipolar and FET transistors as well as phototransistors.
    • 公开了包括垂直腔表面发射激光器(VCSEL)和晶体管的光电集成电路。 VCSEL包括夹在两个分布式布拉格反射器之间的激光腔。 激光腔包括一对围绕一个或多个活性的光学发光量子阱层的间隔层,所述有源光发射量子阱层在可见光范围内具有用作器件的有源发光材料的带隙。 激光腔的厚度是m(λ)/ 2neff,其中m是整数,(λ)是激光辐射的自由空间波长,neff是空腔的有效折射率。 通过将底部反射镜和衬底重掺杂到一种导电类型并以相反的导电类型重掺杂上反射镜的区域来实现激光的电泵浦,以形成二极管结构并向二极管结构施加合适的电压。 公开了将VCSEL与双极和FET晶体管以及光电晶体管集成的实施例。