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31. 发明授权

US08486812B2 Fabrication method for polycrystalline silicon thin film and display device fabricated using the same 有权
标题翻译：多晶硅薄膜的制造方法及使用其制造的显示装置
公开(公告)号：US08486812B2
公开(公告)日：2013-07-16
申请号：US10961266
申请日：2004-10-12
申请人： Ji-Yong Park , Hye-Hyang Park
发明人： Ji-Yong Park , Hye-Hyang Park
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02678 , C30B13/22 , C30B29/06 , C30B29/605 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L27/1296 , H01L29/78672
摘要： The present invention relates to a fabrication method for polycrystalline silicon thin that is capable of providing uniform crystallization of polycrystalline silicon thin film by laser using a mask having a mixed structure of laser transmission regions and laser non-transmission regions, wherein the laser transmission regions exist asymmetrically on the basis of a laser scanning directional axis, and the laser transmission regions exist symmetrically on the basis of a certain central axis, and the laser transmission regions are shifted to a certain distance on the basis of another axis parallel to the certain central axis, so that the laser transmission regions and non laser transmission regions are alternately positioned.
摘要翻译：本发明涉及一种多晶硅薄膜的制造方法，其能够通过使用具有激光透射区域和激光非透射区域的混合结构的掩模的激光来提供多晶硅薄膜的均匀结晶，其中存在激光透射区域基于激光扫描方向轴不对称，并且激光透射区域基于某个中心轴对称地存在，并且激光透射区域基于平行于某个中心轴线的另一个轴线移动到一定距离使得激光透射区域和非激光透射区域交替地定位。

32. 发明申请

US20130175536A1 EL DISPLAY DEVICE, DRIVING METHOD THEREOF, AND ELECTRONIC EQUIPMENT PROVIDED WITH THE EL DISPLAY DEVICE 有权
公开(公告)号：US20130175536A1
公开(公告)日：2013-07-11
申请号：US13776772
申请日：2013-02-26
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Yukio YAMAUCHI , Takeshi FUKUNAGA
IPC分类号： H01L29/786
CPC分类号： G09G3/3225 , G09G3/2018 , G09G3/2022 , G09G3/30 , G09G3/32 , G09G3/3258 , G09G2300/023 , G09G2300/04 , G09G2300/0408 , G09G2300/0417 , G09G2300/0426 , G09G2300/0842 , H01L27/1277 , H01L27/1296 , H01L27/156 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L29/045 , H01L29/0603 , H01L29/786 , H01L29/78621 , H01L29/78624 , H01L29/78627 , H01L33/62 , H01L51/529 , H01L2251/5315 , H01L2924/0002 , H01L2924/00
摘要： An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

33. 发明申请

US20130071974A1 Single-Shot Semiconductor Processing System and Method Having Various Irradiation Patterns 有权
标题翻译：具有各种照射模式的单次半导体处理系统和方法
公开(公告)号：US20130071974A1
公开(公告)日：2013-03-21
申请号：US13592843
申请日：2012-08-23
申请人： James S. Im
发明人： James S. Im
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/02686 , B23K26/066 , H01L21/02 , H01L21/02422 , H01L21/02532 , H01L21/02675 , H01L21/02678 , H01L21/2026 , H01L21/324 , H01L27/1285 , H01L27/1296 , Y10T117/10 , Y10T117/1088
摘要： High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece is irradiated with a laser beam to melt and recrystallize target areas of the surface exposed to the laser beam. The laser beam is shaped into one or more pulses. The beam pulses have suitable dimensions and orientations to pattern the laser beam radiation so that the areas targeted by the beam have dimensions and orientations that are conductive to semiconductor recrystallization. The workpiece is mechanically translated along linear paths relative to the laser beam to process the entire surface of the workpiece at high speeds. Position sensitive triggering of a laser can be used to generate laser beam pulses to melt and recrystallize semiconductor material at precise locations on the surface of the workpiece while it is translated on a motorized stage.
摘要翻译：提供了在低温下沉积在衬底上的用于重结晶薄膜半导体的高通量系统和工艺。用激光束照射薄膜半导体工件以熔化暴露于激光束的表面的目标区域的再结晶。激光束成形为一个或多个脉冲。光束脉冲具有合适的尺寸和取向以对激光束辐射进行图案，使得由光束靶向的区域具有对半导体重结晶导电的尺寸和取向。工件相对于激光束沿着线性路径机械平移，以高速处理工件的整个表面。可以使用激光的位置敏感触发来产生激光束脉冲，以在工件表面上的精确位置处熔融和重结晶半导体材料，同时在激光平台上平移。

34. 发明授权

US08399885B2 Thin film transistor substrate and flat panel display apparatus 失效
标题翻译：薄膜晶体管基板和平板显示装置
公开(公告)号：US08399885B2
公开(公告)日：2013-03-19
申请号：US13099106
申请日：2011-05-02
申请人： Kwang-Sub Shin
发明人： Kwang-Sub Shin
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/78645
摘要： A thin film transistor substrate including a plurality of thin film transistors, and a flat panel display apparatus. Each of the plurality of thin film transistors includes an active layer comprising a first channel region having a first plurality of protrusion lines arranged therein and a second channel region and having a second plurality of protrusion lines arranged therein, a source electrode and a drain electrode electrically connected to the active layer and a gate electrode insulated from the active layer, wherein the first and second plurality of protrusion lines extend in a first direction, wherein a edges of the first channel region that extend in the first direction and are offset sideways by a distance in a second direction that is orthogonal to the first direction from corresponding edges of the second channel region that extend in the first direction.
摘要翻译：包括多个薄膜晶体管的薄膜晶体管基板和平板显示装置。多个薄膜晶体管中的每一个包括有源层，其包括具有布置在其中的第一多个突起线的第一沟道区域和布置在其中的第二多个突起线的第二沟道区域，电极和漏极电极连接到有源层和与有源层绝缘的栅电极，其中第一和第二多个突起线在第一方向上延伸，其中第一沟道区的边缘在第一方向上延伸并且被侧向偏移在与沿第一方向延伸的第二通道区域的相应边缘正交的与第一方向正交的第二方向上的距离。

35. 发明申请

US20130038590A1 ACTIVE MATRIX SUBSTRATE AND DRIVE CIRCUIT THEREOF 有权
标题翻译：有源矩阵基板及其驱动电路
公开(公告)号：US20130038590A1
公开(公告)日：2013-02-14
申请号：US13564201
申请日：2012-08-01
申请人： Takaharu YAMADA
发明人： Takaharu YAMADA
IPC分类号： G09G3/20
CPC分类号： G02F1/136213 , G02F2001/13606 , G09G3/3655 , G09G3/3677 , G09G2320/0223 , H01L27/1296
摘要： An active matrix substrate used in a display device or the like capable of making substantially uniform the level shift generated in the pixel potential caused by the distribution of resistance and capacity in each signal line is disclosed. On the TFT substrate which is an active matrix substrate including a common electrode line formed parallel to the scan signal line, in order to eliminate non-uniformity of the level shift of the pixel potential generated at the scan signal fall, each pixel circuit is formed so that the capacity between the scan signal line and the pixel electrode becomes greater as electrically going farther from the scan signal line drive circuit and going farther from the common electrode line drive circuit. Embodiments can be applied especially to an active matrix substrate used in a liquid crystal display device, an EL display device, and the like.
摘要翻译：公开了一种用于显示装置等中的有源矩阵基板，其能够使由每个信号线中的电阻和容量分布引起的像素电位中产生的电平偏移基本上均匀。在作为与扫描信号线平行形成的公共电极线的有源矩阵基板的TFT基板上，为了消除在扫描信号下降产生的像素电位的电平偏移的不均匀性，形成每个像素电路使得扫描信号线和像素电极之间的电容随着与扫描信号线驱动电路的距离越来越大而越来越远离公共电极线驱动电路。实施例可以特别应用于液晶显示装置，EL显示装置等中使用的有源矩阵基板。

36. 发明申请

US20130015458A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE 有权
标题翻译：有机发光二极管显示装置
公开(公告)号：US20130015458A1
公开(公告)日：2013-01-17
申请号：US13333548
申请日：2011-12-21
申请人： Sam-Min Ko , Young-Joo Kim
发明人： Sam-Min Ko , Young-Joo Kim
IPC分类号： H01L33/08
CPC分类号： H01L27/3262 , H01L27/1229 , H01L27/1285 , H01L27/1296
摘要： An organic light emitting diode display device includes: a switching thin film transistor in a pixel region, the switching thin film transistor including a switching semiconductor layer of polycrystalline silicon; a driving thin film transistor connected to the switching thin film transistor, the driving thin film transistor including a driving semiconductor layer of polycrystalline silicon layer; and a light emitting diode connected to the driving thin film transistor, wherein a direction of a channel of the switching thin film transistor is parallel to a first direction, and a direction of a channel of the driving thin film transistor is perpendicular to the first direction.
摘要翻译：一种有机发光二极管显示装置，包括：像素区域中的开关薄膜晶体管，所述开关薄膜晶体管包括多晶硅的开关半导体层; 连接到所述开关薄膜晶体管的驱动薄膜晶体管，所述驱动薄膜晶体管包括多晶硅层的驱动半导体层; 以及连接到所述驱动薄膜晶体管的发光二极管，其中所述开关薄膜晶体管的沟道的方向与第一方向平行，并且所述驱动薄膜晶体管的沟道的方向垂直于所述第一方向。

37. 发明申请

US20130005123A1 Laser Annealing Method And Device 有权
标题翻译：激光退火方法和装置
公开(公告)号：US20130005123A1
公开(公告)日：2013-01-03
申请号：US13608818
申请日：2012-09-10
申请人： Ryusuke KAWAKAMI , Kenichirou NISHIDA , Norihito KAWAGUCHI , Miyuki MASAKI , Atsushi YOSHINOUCHI
发明人： Ryusuke KAWAKAMI , Kenichirou NISHIDA , Norihito KAWAGUCHI , Miyuki MASAKI , Atsushi YOSHINOUCHI
IPC分类号： H01L21/268 , B23K26/00
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译：一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

38. 发明申请

US20120268194A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120268194A1
公开(公告)日：2012-10-25
申请号：US13544513
申请日：2012-07-09
申请人： Jun KOYAMA
发明人： Jun KOYAMA
IPC分类号： H03K17/687
CPC分类号： H01L27/1296 , G02F1/13454 , G09G3/3275 , G09G3/3283 , G09G2320/0233 , H01L27/1277 , H01L29/04 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675
摘要： In a conventional analog buffer circuit composed of polycrystalline semiconductor TFTs, a variation in the output is large. Thus, a measure such as to provide a correction circuit has been taken. However, there has been such a problem that a circuit and driver operation are complicated. Therefore, a gate length and a gate width of a TFT composing an analog buffer circuit is set to be larger. Also, a multi-gate structure is adopted thereto. In addition, the arrangement of channel regions is devised. Thus, the analog buffer circuit having a small variation is obtained without using a correction circuit, and a semiconductor device having a small variation can be provided.
摘要翻译：在由多晶半导体TFT构成的常规模拟缓冲电路中，输出变化大。因此，已经采取了诸如提供校正电路的措施。然而，存在电路和驱动器操作复杂的问题。因此，构成模拟缓冲电路的TFT的栅极长度和栅极宽度被设定得较大。此外，采用多栅极结构。此外，设计了通道区域的布置。因此，在不使用校正电路的情况下获得具有小变化的模拟缓冲电路，并且可以提供具有小变化的半导体器件。

39. 发明授权

US08294147B2 Semiconductor device and manufacturing method the same 有权
标题翻译：半导体器件和制造方法相同
公开(公告)号：US08294147B2
公开(公告)日：2012-10-23
申请号：US12832333
申请日：2010-07-08
申请人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
发明人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.
摘要翻译：目的是制造和提供包括具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在包括薄膜晶体管的半导体器件的制造方法中，其中包括沟道形成区域的半导体层用作氧化物半导体膜，用于减少诸如湿度的杂质（脱水或脱氢热处理）的热处理在形成与氧化物半导体层接触的用作保护膜的氧化物绝缘膜。然后，在漏极电极层，栅极绝缘层和氧化物半导体层中以及在氧化物半导体膜和上下膜之间的界面处不仅在源电极层中存在的诸如水分的杂质它们与氧化物半导体层接触。

40. 发明申请

US20120249497A1 Display Device 有权
标题翻译：显示设备
公开(公告)号：US20120249497A1
公开(公告)日：2012-10-04
申请号：US13492970
申请日：2012-06-11
申请人： Shunpei Yamazaki , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuyuki Arai
IPC分类号： H01L33/08 , G06F3/038
CPC分类号： H01L27/3262 , G09G3/3208 , G09G3/3233 , G09G2300/0417 , G09G2300/0814 , G09G2300/0842 , G09G2310/0251 , G09G2320/0233 , H01L27/1285 , H01L27/1296 , H01L27/3244 , H01L27/3248 , H01L27/3276 , H01L29/78645 , H01L51/0097 , H01L51/50 , H01L51/5206 , H01L51/5221
摘要： At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied.
摘要翻译：提供与发光元件连接的至少两个TFT，使构成各个TFT的有源层的半导体区域的结晶度彼此不同。作为半导体区域，使用通过激光退火使非晶半导体膜结晶而得到的区域。为了改变结晶度，应用了改变连续振荡激光束的扫描方向以使晶体生长方向彼此不同的方法。或者，应用改变各个半导体区域之间的TFT的沟道长度方向而不改变连续振荡激光束的扫描方向使得晶体生长方向和电流流动方向彼此不同的方法。

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