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31. 发明授权

US4403151A Method of forming patterns 失效
标题翻译：形成图案的方法
公开(公告)号：US4403151A
公开(公告)日：1983-09-06
申请号：US250217
申请日：1981-04-02
申请人： Kozo Mochiji , Yozi Maruyama , Shinji Okazaki , Fumio Murai
发明人： Kozo Mochiji , Yozi Maruyama , Shinji Okazaki , Fumio Murai
IPC分类号： G03F7/039 , G03F7/20 , H05K3/00 , H05K3/06
CPC分类号： G03F7/7045 , G03F7/039 , G03F7/2022 , H05K3/0082 , H05K3/064 , Y10S430/143
摘要： Desired portions of the positive-type photoresist film are irradiated with an electron beam, and regions including at least the regions irradiated with the electron beam are further irradiated with ultraviolet light, followed by developing.The photosensitive radicals are destroyed in the regions which are irradiated with the electron beam. Therefore, the solubility of the photoresist film is not increased even when it is irradiated with ultraviolet light, and resist patterns are formed by developing.
摘要翻译：用电子束照射正型光致抗蚀剂膜的所需部分，并且至少使用电子束照射的区域的区域进一步用紫外线照射，然后显影。在用电子束照射的区域中，感光性基团被破坏。因此，即使用紫外线照射也不会增加光致抗蚀剂膜的溶解度，并且通过显影形成抗蚀剂图案。

32. 发明授权

US09921486B2 Multiscale patterning of a sample with apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability 有权
公开(公告)号：US09921486B2
公开(公告)日：2018-03-20
申请号：US15104596
申请日：2014-11-13
申请人： SWISSLITHO AG
发明人： Urs T Duerig , Stefan Fringes , Felix Holzner , Armin W Knoll
IPC分类号： G03F7/20
CPC分类号： G03F7/70591 , G03F7/70383 , G03F7/7045 , G03F7/70458
摘要： The present invention provides a method for multiscale patterning of a sample. The method includes: placing the sample in an apparatus having both thermo-optical lithography capability and thermal scanning probe lithography capability; and patterning two patterns onto the sample, respectively by: thermo-optical lithography, wherein light is emitted from a light source onto the sample to heat the latter and thereby write a first pattern that is the largest of the two patterns; and thermal scanning probe lithography, wherein the sample and a heated probe tip are brought in contact for writing a second pattern that has substantially smaller critical dimensions than the first pattern. There is also provided an apparatus for multiscale patterning of a sample.

33. 发明申请

US20170363968A1 METHOD FOR PRINTING COLOUR IMAGES 有权
公开(公告)号：US20170363968A1
公开(公告)日：2017-12-21
申请号：US15538948
申请日：2015-12-18
申请人： EULITHA A.G.
发明人： Harun H. SOLAK , Christian DAIS , Francis CLUBE
IPC分类号： G03F7/20 , G03F7/00
CPC分类号： G03F7/70466 , G02B5/008 , G02B5/1809 , G02B5/204 , G03F7/0007 , G03F7/40 , G03F7/70408 , G03F7/7045 , G03F7/70558
摘要： A method forms a pattern of metallic nanofeatures that generates by plasmonic resonance a desired image having a distribution of colors. The method includes providing a substrate having a layer of photosensitive material, exposing the layer to a high-resolution periodic pattern of dose distribution, and determining a low-resolution pattern of dose distribution such that the sum of the low-resolution pattern and the high-resolution periodic pattern of dose distribution is suitable for forming the pattern of metallic nanofeatures. The lateral dimensions of the metallic nano-features have a spatial variation across the pattern that corresponds to the distribution of colors in the desired image. The layer of photosensitive material is exposed to the low-resolution pattern of dose distribution. The layer of photosensitive material is developed to produce a pattern of nanostructures in the developed photosensitive material. The pattern of nanostructures is processed so that the pattern of metallic nanofeatures is formed.

34. 发明申请

US20170069509A1 DATA COMPRESSION FOR EBEAM THROUGHPUT 审中-公开
标题翻译： EBEAM THROUGHPUT数据压缩
公开(公告)号：US20170069509A1
公开(公告)日：2017-03-09
申请号：US15122398
申请日：2014-12-19
申请人： Intel Corporation
发明人： Donald W. NELSON , Yan A. BORODOVSKY , Mark C. PHILLIPS , Robert M. BIGWOOD
IPC分类号： H01L21/311 , H01J37/317 , H01J37/04 , H01L21/027 , H01J37/302
CPC分类号： H01L21/31144 , G03F7/2059 , G03F7/7045 , H01J37/045 , H01J37/3026 , H01J37/3174 , H01J37/3177 , H01J2237/0435 , H01J2237/0453 , H01J2237/303 , H01J2237/30422 , H01J2237/30438 , H01J2237/31762 , H01J2237/31764 , H01L21/0277
摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of data compression or data reduction for e-beam tool simplification involves providing an amount of data to write a column field and to adjust the column field for field edge placement error on a wafer, wherein the amount of data is limited to data for patterning approximately 10% or less of the column field. The method also involves performing e-beam writing on the wafer using the amount of data.
摘要翻译：描述适用于涉及补充电子束光刻（CEBL）的光刻设备和方法。在一个示例中，用于电子束工具简化的数据压缩或数据简化的方法包括提供一定量的数据来写入列字段并且调整用于晶片上的场边缘放置误差的列字段，其中数据量是限于用于图案化的大约10％或更少的列场的数据。该方法还涉及使用数据量在晶片上执行电子束写入。

35. 发明申请

US20160247714A1 ELECTRON-BEAM (E-BEAM) BASED SEMICONDUCTOR DEVICE FEATURES 有权
标题翻译：基于电子束（E-BEAM）的半导体器件特征
公开(公告)号：US20160247714A1
公开(公告)日：2016-08-25
申请号：US14627653
申请日：2015-02-20
申请人： QUALCOMM Incorporated
发明人： Stanley Seungchul Song , Jeffrey Junhao Xu , Da Yang , Choh Fei Yeap
IPC分类号： H01L21/768 , H01L23/535 , G06F17/50 , H01L21/311
CPC分类号： H01L21/76802 , G03F1/14 , G03F7/203 , G03F7/70425 , G03F7/70433 , G03F7/7045 , G03F7/70466 , G06F17/5077 , H01L21/31116 , H01L23/535
摘要： Electron-beam (e-beam) based semiconductor device features are disclosed. In a particular aspect, a method includes performing a first lithography process to fabricate a first set of cut pattern features on a semiconductor device. A distance of each feature of the first set of cut pattern features from the feature to an active area is greater than or equal to a threshold distance. The method further includes performing an electron-beam (e-beam) process to fabricate a second cut pattern feature on the semiconductor device. A second distance of the second cut pattern feature from the second cut pattern feature to the active area is less than or equal to the threshold distance.
摘要翻译：公开了基于电子束（e-beam）的半导体器件特征。在特定方面，一种方法包括执行第一光刻工艺以在半导体器件上制造第一组切割图案特征。从特征到有效区域的第一组切割图案特征的每个特征的距离大于或等于阈值距离。该方法还包括执行电子束（e-beam）工艺以在半导体器件上制造第二切割图案特征。第二切割图案特征从第二切割图案特征到有效区域的第二距离小于或等于阈值距离。

36. 发明授权

US09304410B2 Apparatus and method of direct writing with photons beyond the diffraction limit 有权
$Apparatus and method of direct writing with photons beyond the diffraction limit$
公开(公告)号：US09304410B2
公开(公告)日：2016-04-05
申请号：US14143139
申请日：2013-12-30
申请人： David A. Markle , Rudolf H. Hendel , John S. Petersen , Hwan J. Jeong
发明人： David A. Markle , Rudolf H. Hendel , John S. Petersen , Hwan J. Jeong
IPC分类号： G03B27/32 , G03B27/54 , G03C5/00 , G03F7/20
CPC分类号： G03F7/7045 , G03F7/70191 , G03F7/70291 , G03F7/70375 , G03F7/70383 , G03F7/70408 , G03F7/70466
摘要： Direct-write lithography apparatus and methods are disclosed in which a transducer image and an image of crossed interference fringe patterns are superimposed on a photoresist layer supported by a substrate. The transducer image has an exposure wavelength and contains bright spots, each corresponding to an activated pixel. The interference image has an inhibition wavelength and contains dark spots where the null points in the crossed interference fringes coincide. The dark spots are aligned with and trim the peripheries of the corresponding bright spot to form sub-resolution photoresist pixels having a size smaller than would be formed in the absence of the dark spots.

37. 发明申请

US20150253679A1 Lithographic Method and Apparatus 有权
标题翻译：平版印刷方法和装置
公开(公告)号：US20150253679A1
公开(公告)日：2015-09-10
申请号：US14428023
申请日：2013-09-17
申请人： ASML NETHERLANDS B.V.
发明人： Erik Roelof Loopstra , Jan Bernard Plechelmus Van Schoot , Timotheus Franciscus Sengers , Christiaan Louis Valentin , Antonius Johannes Josephus Van Dijsseldonk
IPC分类号： G03F7/20
CPC分类号： G03F7/70425 , G03F7/7045 , G03F7/70466 , G03F7/70475
摘要： A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between centre points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
摘要翻译：公开了一种使用EUV光刻设备将基板上的图案化区域曝光的方法，该光刻设备具有约5×的平均值和约0.4的数值孔径。该方法包括使用第一曝光将基板上的图案化区域的第一部分曝光，第一部分尺寸明显小于常规曝光的尺寸，并且使用一个或多个曝光将基板上的图案化区域的一个或多个附加部分曝光或更多额外的曝光，附加部分的尺寸明显小于常规曝光的尺寸。该方法还包括重复上述步骤以暴露衬底上的第二图案化区域，第二图案化区域设置有与第一图案化区域相同的图案，其中第一和第二图案化区域的中心点之间的距离对应于尺寸的常规曝光。

38. 发明授权

US09063434B2 Sub-diffraction-limited patterning and imaging via multi-step photoswitching 有权
$Sub-diffraction-limited patterning and imaging via multi-step photoswitching$
标题翻译：亚衍射限制图案化和通过多步光切换成像
公开(公告)号：US09063434B2
公开(公告)日：2015-06-23
申请号：US14152720
申请日：2014-01-10
申请人： University of Utah Research Foundation
发明人： Rajesh Menon , Precious Cantu
IPC分类号： G03F7/20 , G03F7/00 , G03F7/004 , G03F7/039
CPC分类号： G03F7/7045 , G03F7/0035 , G03F7/0045 , G03F7/0395
摘要： Sub-diffraction-limited patterning using a photoswitchable recording material is disclosed. A substrate can be provided with a photoresist in a first transition state. The photoresist can be configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination. An optical device can selectively expose the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state. The optical device or a substrate carrier securing the substrate can modify the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern. The method can further convert one of the first and second transition states of the photoresist into an irreversible transition state, while the other of the first and second transition states remains in a reversible transition state. The photoresist can be developed to remove the regions of the photoresist in the irreversible transition state.
摘要翻译：公开了使用可光开关的记录材料进行亚衍射限制图案化。衬底可以设置有处于第一过渡状态的光致抗蚀剂。光致抗蚀剂可以被配置用于基于照明的第一波长带和第二波长带照明的至少两个过渡状态之间的光谱选择性可逆转换。光学装置可以选择性地将光致抗蚀剂暴露于第二波长带中的第二波长的驻波，以将光致抗蚀剂的一部分转化为第二过渡状态。固定衬底的光学器件或衬底载体可以改变相对于衬底的驻波，以进一步将光致抗蚀剂的附加区域以特定的图案曝光到第二过渡状态。该方法可以将光致抗蚀剂的第一和第二过渡态之一进一步转换成不可逆的过渡态，而第一和第二过渡态中的另一个保持在可逆转变状态。可以显影光致抗蚀剂以去除处于不可逆过渡状态的光致抗蚀剂的区域。

39. 发明申请

US20140312500A1 COMBINING CUT MASK LITHOGRAPHY AND CONVENTIONAL LITHOGRAPHY TO ACHIEVE SUB-THRESHOLD PATTERN FEATURES 有权
标题翻译：组合切割掩模图和常规算法以实现子阈值图案特征
公开(公告)号：US20140312500A1
公开(公告)日：2014-10-23
申请号：US13864344
申请日：2013-04-17
申请人： QUALCOMM INCORPORATED
发明人： John J. Zhu , Zhongze Wang , Yang Da
IPC分类号： H01L21/283 , H01L21/768 , H01L23/50
CPC分类号： H01L21/76894 , G03F7/7045 , G03F7/70466 , H01L21/28123 , H01L21/283 , H01L21/31 , H01L21/469 , H01L21/76892 , H01L21/76895 , H01L23/50 , H01L24/27 , H01L24/31 , H01L2924/0002 , H01L2924/12042 , H01L2924/00
摘要： Features are fabricated on a semiconductor chip. The features are smaller than the threshold of the lithography used to create the chip. A method includes patterning a first portion of a feature (such as a local interconnect) and a second portion of the feature to be separated by a predetermined distance, such as a line tip to tip space or a line space. The method further includes patterning the first portion with a cut mask to form a first sub-portion (e.g., a contact) and a second sub-portion. A dimension of the first sub-portion is less than a dimension of a second predetermined distance, which may be a line length resolution of a lithographic process having a specified width resolution. A feature of a semiconductor device includes a first portion and a second portion having a dimension less than a lithographic resolution of the first portion.
摘要翻译：特征是在半导体芯片上制造的。这些特征小于用于制造芯片的光刻的阈值。一种方法包括图案化特征（例如局部互连）的第一部分和要被分离预定距离的特征的第二部分，例如线尖到尖端空间或线空间。该方法还包括用切割掩模图案化第一部分以形成第一子部分（例如，接触）和第二子部分。第一子部分的尺寸小于第二预定距离的尺寸，其可以是具有指定宽度分辨率的光刻工艺的线长分辨率。半导体器件的特征包括第一部分和具有小于第一部分的光刻分辨率的尺寸的第二部分。

40. 发明申请

US20140247438A1 RETICLE DEFECT CORRECTION BY SECOND EXPOSURE 有权
标题翻译：第二次曝光造成的缺陷修正
公开(公告)号：US20140247438A1
公开(公告)日：2014-09-04
申请号：US14275688
申请日：2014-05-12
申请人： GLOBALFOUNDRIES INC.
发明人： Arthur HOTZEL
IPC分类号： G03F7/40
CPC分类号： G03F7/40 , G03F1/24 , G03F1/72 , G03F1/84 , G03F7/70283 , G03F7/7045 , G03F7/70466 , G03F7/7065
摘要： Correction of reticle defects, such as EUV reticle defects, is accomplished with a second exposure. Embodiments include obtaining a reticle with a first pattern corresponding to a design for a wafer pattern, detecting dark defects and/or design/OPC weak spots in the first pattern, exposing a resist covered wafer using the reticle, and exposing the wafer using a second reticle with a second pattern or a second image field with openings corresponding to the dark defects, with a repair pattern on the reticle or on another reticle, or with a programmed e-beam or laser writer.
摘要翻译：修正掩模版缺陷，例如EUV掩模版缺陷，是通过第二次曝光来完成的。实施例包括获得具有对应于晶片图案的设计的第一图案的掩模版，检测第一图案中的暗缺陷和/或设计/ OPC弱点，使用掩模版曝光抗蚀剂覆盖的晶片，以及使用第二图案曝光晶片具有第二图案的掩模版或具有对应于暗缺陷的开口的第二图像场，在掩模版或另一掩模版上具有修复图案，或者与编程的电子束或激光写入器。

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