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    • 39. 发明申请
    • Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer
    • 使用偏振反射计连续测量在半导体晶片上形成的结构
    • US20080106728A1
    • 2008-05-08
    • US11594497
    • 2006-11-07
    • Vi VuongJunwei BaoManuel Madriaga
    • Vi VuongJunwei BaoManuel Madriaga
    • G01N21/00
    • G01N21/4788G01N21/95607G01N2021/8416G01N2021/95615
    • Structures formed on a semiconductor wafer are consecutively measured by obtaining first and second measured diffraction signals of a first structure and a second structure formed abutting the first structure. The first and second measured diffraction signals were consecutively measured using a polarized reflectometer. The first measured diffraction signal is compared to a first simulated diffraction signal generated using a profile model of the first structure. The profile model has profile parameters that characterize geometries of the first structure. One or more features of the first structure are determined based on the comparison. The second measured diffraction signal is converted to a converted diffraction signal. The converted diffraction signal is compared to the first simulated diffraction signal or a second simulated diffraction signal generated using the same profile model as the first simulated diffraction signal. One or more features of the second structure are determined based on the comparison.
    • 通过获得与第一结构邻接形成的第一结构和第二结构的第一和第二测量的衍射信号,连续测量形成在半导体晶片上的结构。 使用偏振反射计连续测量第一和第二测量的衍射信号。 将第一测量的衍射信号与使用第一结构的轮廓模型产生的第一模拟衍射信号进行比较。 轮廓模型具有表征第一结构的几何形状的轮廓参数。 基于比较确定第一结构的一个或多个特征。 第二测量的衍射信号被转换成转换的衍射信号。 将转换的衍射信号与第一模拟衍射信号或使用与第一模拟衍射信号相同的轮廓模型产生的第二模拟衍射信号进行比较。 基于比较来确定第二结构的一个或多个特征。
    • 40. 发明授权
    • Method and system to compensate for lamp intensity differences in a photolithographic inspection tool
    • 补偿光刻检测工具灯强度差异的方法和系统
    • US07359545B2
    • 2008-04-15
    • US10749887
    • 2003-12-31
    • David DixonLloyd Lee
    • David DixonLloyd Lee
    • G06K9/00
    • G01N21/95607G01N21/278G01N21/93G01N21/9501G01N2021/8416G01N2201/0695G01N2201/12753
    • An after develop inspection tool considers tool-to-tool variability when determining confidence score for wafers under inspection. A golden wafer is used to calculate a RGB signature as well as the slope of the individual RGB curves for different lamp intensities. These slopes are normalized in order to generate a compensation factor for red values and blue values within a signature. When a wafer is subsequently inspected at an ADI station using a different lamp, the test wafer RGB signature is likely captured at a different lamp intensity. Consequently, when comparing the signatures, the golden wafer RGB signature is adjusted by the compensation factors, based on the different lamp's intensity setting, and this adjusted RGB signature is then used to determine whether a defect exists on the test wafer.
    • 在确定检查中的晶片的置信度得分后,开发后的检查工具会考虑刀具对刀具的变异性。 使用金色晶片来计算RGB特征以及不同灯泡强度的各个RGB曲线的斜率。 这些斜率被归一化以便在签名中产生红色值和蓝色值的补偿因子。 当使用不同的灯随后在ADI站检查晶片时,可能以不同的灯强度捕获测试晶片RGB特征。 因此,当比较签名时,基于不同的灯的强度设置,通过补偿因子来调整金色晶片RGB签名,然后使用该调整的RGB签名来确定在测试晶片上是否存在缺陷。