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31. 发明授权

US5167717A Apparatus and method for processing a semiconductor wafer 失效
标题翻译：用于处理半导体波形的装置和方法
公开(公告)号：US5167717A
公开(公告)日：1992-12-01
申请号：US311686
申请日：1989-02-15
申请人： Charles Boitnott
发明人： Charles Boitnott
IPC分类号： H01L21/31 , C30B33/00 , H01L21/316
CPC分类号： C30B29/06 , C30B33/005 , Y10S148/011
摘要： An apparatus and method for growing semiconductor quality oxide thermal layers on semiconductor wafers fast enough to be economically feasible as a single wafer process system. Process speed is insured by high pressure and high temperature. For example, if the pressure is about 100 atmospheres (1,500 psi) and at a temperature of 900.degree. C., approximately 2.66 minutes are required to grow a 5,000.ANG. oxide layer in a steam environment. The system can reach these operating conditions from ambient in approximately 30 seconds and depressurization and cool down require approximately 60 to 90 seconds. The apparatus includes a processing chamber to be pressurized with an oxidant, such as high pressure steam. The process chamber is contained in a pressure vessel adapted to be pressurized with an inert gas, such as nitrogen, to a high pressure. A pressure equalizing scheme is used to keep the fluid pressure of the process chamber and the pressure of the fluid pressure vessel substantially the same. The pressure equalization permits the use of thin walls for defining the process chamber.

32. 发明授权

US4819579A Coating of semiconductor wafers and apparatus therefor 失效
标题翻译：半导体晶片的涂覆及其设备
公开(公告)号：US4819579A
公开(公告)日：1989-04-11
申请号：US618140
申请日：1984-06-07
申请人： George M. Jenkins
发明人： George M. Jenkins
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/12 , C30B25/14 , C30B31/16 , C30B33/00 , C23C10/00
CPC分类号： C23C16/458 , C23C16/455 , C23C16/45578 , C30B25/12 , C30B25/14 , C30B31/16 , C30B33/005
摘要： In the production of coatings on semiconductor wafers, fragile equipment is used and also difficulties in obtaining uniform coatings arise. The invention provides a form of boat for holding wafers and a manifold structure for feeding gases to the boats, and wafers which are less fragile cheaper and easier to manufacture and give more uniform coatings. The boats are relatively short, of semi-cylindrical form with slots through which gas can flow, and with rails for positioning and holding wafers at correct heights. The manifolds have apertures which are spaced at varying distances along the manifold as compared to the conventional longitudinal slot. The invention is particularly applicable to producing oxide coatings and polycrystalline silicon coatings on silicon wafers.
摘要翻译：在半导体晶片上涂层的生产中，使用脆弱的设备，并且也难以获得均匀的涂层。本发明提供了一种用于保持晶片的船形式和用于将气体供给船的歧管结构，以及不太易碎且易于制造并且提供更均匀涂层的晶片。船只相对较短，半圆柱形形式具有可通过气体流动的槽，以及用于定位和保持正确高度的晶片的轨道。歧管具有与常规纵向狭槽相比沿着歧管以不同距离间隔开的孔。本发明特别适用于在硅晶片上生产氧化物涂层和多晶硅涂层。

33. 发明授权

US4558660A Semiconductor fabricating apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US4558660A
公开(公告)日：1985-12-17
申请号：US475828
申请日：1983-03-16
申请人： Jun-ichi Nishizawa , Tadahiro Ohmi
发明人： Jun-ichi Nishizawa , Tadahiro Ohmi
IPC分类号： H01L21/205 , C30B25/02 , C30B25/10 , C30B33/00 , H01L21/268 , H01L21/31 , B05C11/00
CPC分类号： H01L21/67115 , C30B25/105 , C30B33/005 , H01L21/2686
摘要： A semiconductor fabricating apparatus is capable of fabricating a high quality semiconductor with utilization of crystal growth, thermal oxidation of CVD membrane growth at low temperature. The semiconductor fabricating apparatus includes a reaction chamber having a gas inlet and a gas outlet, an insulative support means disposed in the reaction chamber for supporting semiconductor wafers thereon, an infrared lamp means for irradiating exposed surfaces of the semiconductor wafers and an ultra-violet lamp means for irradiating the exposed surfaces of the semiconductor wafers overlappingly with the infrared irradiation.
摘要翻译：半导体制造装置能够利用晶体生长，在低温下CVD膜生长的热氧化来制造高质量的半导体。半导体制造装置包括具有气体入口和气体出口的反应室，设置在反应室中用于支撑半导体晶片的绝缘支撑装置，用于照射半导体晶片的暴露表面的红外灯装置和紫外线灯用于以与红外线照射重叠的方式照射半导体晶片的暴露表面的装置。

34. 发明授权

US4315479A Silicon wafer steam oxidizing apparatus 失效
标题翻译：硅晶片蒸汽氧化装置
公开(公告)号：US4315479A
公开(公告)日：1982-02-16
申请号：US126721
申请日：1980-06-27
申请人： Monte M. Toole , Robert B. Champagne
发明人： Monte M. Toole , Robert B. Champagne
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： C30B33/005
摘要： A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid water under pressure into the enclosure and for the continuous flow through of water vapor at high temperature and high pressure in the reaction chamber while maintaining the aforementioned pressure balance.
摘要翻译：一种高压，高温气态化学设备，特别设计用于硅晶片的氧化，并提供跨反应室的容器壁的压力平衡，用于在反应室内的水沸腾的封闭物和在下面注入液态水压力进入外壳，并在反应室内高温高压地连续流过水蒸汽，同时保持上述的压力平衡。

35. 发明授权

US4268538A High-pressure, high-temperature gaseous chemical method for silicon oxidation 失效
标题翻译：用于硅氧化的高压，高温气体化学方法
公开(公告)号：US4268538A
公开(公告)日：1981-05-19
申请号：US24989
申请日：1979-03-29
申请人： Monte M. Toole , Raphael Klein
发明人： Monte M. Toole , Raphael Klein
IPC分类号： C30B33/00 , H01L21/316
CPC分类号： C30B29/06 , C30B33/005 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
摘要翻译：在用于半导体工业的硅晶片或硅涂覆的晶片或其它半导体上生长氧化物的装置和方法，其中氧化物生长在反应室内的高压和高温条件下通过将保持在连续流动状态的气体氧化成并通过房间。

36. 发明授权

US4253417A Closure for thermal reactor 失效
标题翻译：热反应器关闭
公开(公告)号：US4253417A
公开(公告)日：1981-03-03
申请号：US123243
申请日：1980-02-21
申请人： Johan A. Valentijn
发明人： Johan A. Valentijn
IPC分类号： C30B33/00 , C23C13/08
CPC分类号： C30B33/005
摘要： Apparatus for thermal oxidation of silicon wafers at high pressures of a type wherein a reactor of a refractory material is disposed within a pressure vessel, and wherein a margin of a wafer portal of the reactor and a closure of the refractory material have congruent surfaces enabling a hermetic seal to be effected, an improvement is disclosed wherein the closure is mounted within a pressure-vessel head used to close an access portal of the pressure vessel by means of gimbals, whereby a hermetic seal can be effected at said surfaces despite misalignments.
摘要翻译：一种用于在其中将耐火材料的反应器设置在压力容器内的高压下的硅晶片的热氧化装置，其中反应器的晶片入口的边缘和耐火材料的封闭体具有一致的表面，使得能够要进行气密密封，公开了一种改进，其中封闭件安装在用于通过万向接头关闭压力容器进入入口的压力容器头部中，由此可以在所述表面上实现气密密封，尽管未对准。

37. 发明授权

US4154192A Manufacturing apparatus for semiconductor devices 失效
标题翻译：半导体器件制造装置
公开(公告)号：US4154192A
公开(公告)日：1979-05-15
申请号：US859108
申请日：1977-12-09
申请人： Natsuro Tsubouchi , Akira Nishimoto , Kirokazu Moyoshi
发明人： Natsuro Tsubouchi , Akira Nishimoto , Kirokazu Moyoshi
IPC分类号： C30B33/00 , C23C13/00
CPC分类号： C30B29/06 , C30B33/005
摘要： An oxidizing tube encircled by an electric heater is disposed within a pressure envelope. A high pressure inert gas is supplied to the envelope and tube while hydrogen and oxygen are supplied to the tube while being kept at an elevated temperature to react with each other to form steam. The steam oxidizes the surfaces of silicon wafers placed in the tube to form silicon dioxide films on them. Alternatively a water evaporator may be disposed within the pressure envelope to directly supply steam to the tube with the high pressure gas aiding the supply of the steam.
摘要翻译：由电加热器环绕的氧化管设置在压力外壳内。向包封管提供高压惰性气体，同时将氢气和氧气供应到管中同时保持在高温下彼此反应以形成蒸汽。蒸汽氧化放置在管中的硅晶片的表面以在其上形成二氧化硅膜。或者，水蒸发器可以设置在压力外壳内，以直接向管提供蒸汽，其中高压气体有助于蒸汽的供应。

38. 发明授权

US09850595B2 Method for heat treatment of silicon single crystal wafer 有权
公开(公告)号：US09850595B2
公开(公告)日：2017-12-26
申请号：US15107050
申请日：2015-08-01
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Ryoji Hoshi , Hiroyuki Kamada
IPC分类号： H01L21/322 , C30B33/02 , C30B29/06 , H01L29/32 , C01B33/02 , C30B33/00 , C30B15/00
CPC分类号： C30B33/02 , C01B33/02 , C30B15/00 , C30B29/06 , C30B33/005 , H01L21/3221 , H01L29/32
摘要： A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

39. 发明申请

US20170121850A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170121850A1
公开(公告)日：2017-05-04
申请号：US15403563
申请日：2017-01-11
申请人： FUJI ELECTRIC CO., LTD.
发明人： Masayuki MIYAZAKI
IPC分类号： C30B33/00 , H01L21/306 , H01L29/16 , C30B25/20 , C23C16/56 , C30B29/36 , C30B33/10 , C30B33/02 , C23C16/32 , H01L21/02 , C30B25/18
CPC分类号： C30B33/005 , B24B37/042 , B24B37/10 , B24B37/245 , C23C16/325 , C23C16/56 , C30B25/186 , C30B25/20 , C30B29/36 , C30B33/02 , C30B33/08 , C30B33/10 , H01L21/0206 , H01L21/02236 , H01L21/02378 , H01L21/02529 , H01L21/0262 , H01L21/02664 , H01L21/30604 , H01L21/30625 , H01L29/1608
摘要： A method, for manufacturing a silicon carbide semiconductor device, includes: forming a silicon carbide epitaxial film on a silicon carbide substrate; flattening a surface of the epitaxial film by using chemical mechanical polishing such that the surface of the epitaxial film has an arithmetic mean roughness Ra of 0.3 nm or less; thermally oxidizing the surface of the epitaxial film to form a sacrificial oxide; removing the sacrificial oxide; and cleaning, by using deionized water, a surface of the epitaxial film exposed by the removing of the sacrificial oxide.

40. 发明申请

US20170037541A1 METHOD FOR HEAT TREATMENT OF SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：硅单晶水热处理方法
公开(公告)号：US20170037541A1
公开(公告)日：2017-02-09
申请号：US15107050
申请日：2015-08-01
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Ryoji HOSHI , Hiroyuki KAMADA
IPC分类号： C30B33/02 , H01L21/322 , C01B33/02 , C30B29/06 , C30B33/00
CPC分类号： C30B33/02 , C01B33/02 , C30B15/00 , C30B29/06 , C30B33/005 , H01L21/3221 , H01L29/32
摘要： A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.
摘要翻译：一种在氧化环境中对硅单晶晶片进行热处理的方法，包括：基于由热处理期间的热处理温度，硅单晶中的氧浓度三方相关性确定的条件进行热处理热处理前的晶片以及切割出硅单晶晶片的硅单晶的生长条件。这提供了一种硅单晶晶片的热处理方法，其可以通过在氧化环境中的热处理以低成本，有效且可靠地消除硅单晶晶片中的空隙缺陷或微氧化物沉淀核。

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