专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20130280654A1 POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, PROTECTIVE FILM, INSULATING FILM, AND SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE CURED FILM 审中-公开
标题翻译：阳离子型感光树脂组合物，固化膜，保护膜，绝缘膜和半导体器件以及包括固化膜的显示器件
公开(公告)号：US20130280654A1
公开(公告)日：2013-10-24
申请号：US13922199
申请日：2013-06-19
申请人： SUMITOMO BAKELITE CO., LTD.
发明人： Hiromichi SUGIYAMA , Yasunori TAKAHASHI
IPC分类号： G03F7/085
CPC分类号： G03F7/085 , C08G77/60 , C08L77/06 , C08L83/16 , C08L2203/20 , C09D177/06 , G03F7/0226 , G03F7/0751 , G03F7/0755 , G03F7/40 , C08L83/00
摘要： A positive-type photosensitive resin composition includes (A) an alkali-soluble resin, (B) a photosensitizer, and (C) a silicon compound shown by the following general formula (1). R1 represents an alkylene group having 6 to 8 carbon atoms, and R2 represents an alkyl group having 1 to 10 carbon atoms. The positive-type photosensitive resin composition exhibits excellent storage stability, produces a film that exhibits excellent adhesion to a substrate during development, and produces a cured film that exhibits excellent adhesion to a substrate after humidification. (R2O)3—Si—R1—Si—(OR2)3 (1)
摘要翻译：正型感光性树脂组合物包含（A）碱溶性树脂，（B）光敏剂，（C）由以下通式（1）表示的硅化合物。 R1表示碳原子数为6〜8的亚烷基，R2表示碳原子数1〜10的烷基。正型感光性树脂组合物显示优异的保存稳定性，产生在显影期间表现出优异的与基材的粘附性的膜，并且产生在加湿后对基材表现出优异的粘附性的固化膜。（R2O）3-Si-R1-Si-（OR2）3（1）

32. 发明授权

US08513450B2 Process for preparing polysilanes 失效
标题翻译：制备聚硅烷的方法
公开(公告)号：US08513450B2
公开(公告)日：2013-08-20
申请号：US13379429
申请日：2010-06-10
申请人： Andreas Bockholt , Andreas Feigl , Bernhard Rieger
发明人： Andreas Bockholt , Andreas Feigl , Bernhard Rieger
IPC分类号： C07F7/12
CPC分类号： C08G77/08 , C08G77/60
摘要： The invention provides a process for preparing polysilanes of the general formula (1) SinR2n+2 (1), in which silane of the general formula (2) R1mSiH4-m (1a) is converted in the presence of boron compounds of the general formula (3) R23B (3), where R1 is a hydrocarbyl radical having 1 to 18 carbon atoms, R is hydrogen or an R1 radical, R2 is fluorine, chlorine, bromine or a hydrocarbyl radical which has 1 to 18 carbon atoms and may bear substituents selected from fluorine, chlorine, bromine, iodine and NO2, n has integer values from 2 to 100,000, and m is 0, 1 or 2.
摘要翻译：本发明提供了制备通式（1）SinR2n + 2（1）的聚硅烷的方法，其中通式（2）的硅烷R 1 m SiH 4-m（1a）在通式（3）R23B（3）其中R1是具有1至18个碳原子的烃基，R是氢或R 1基，R 2是氟，氯，溴或具有1至18个碳原子并且可以承载的烃基选自氟，氯，溴，碘和NO 2的取代基，n具有2至100,000的整数，m为0,1或2。

33. 发明申请

US20130210981A1 POLYCARBONATE RESIN COMPOSITION AND FORMED PRODUCT THEREOF 有权
公开(公告)号：US20130210981A1
公开(公告)日：2013-08-15
申请号：US13840843
申请日：2013-03-15
申请人： Mitsubishi Engineering-Plastics Corporation
发明人： Toshiki MONDEN
IPC分类号： C08K5/549 , C08K5/42
CPC分类号： C08K5/549 , C08G77/60 , C08K5/42 , C08K5/5419 , C08L27/12 , C08L69/00 , C08L83/16 , C08L83/00
摘要： In a polycarbonate resin composition containing a polycarbonate resin and a polycarbosilane compound, the use of the polycarbosilane compound modifies the surface properties of the polycarbonate resin composition without adversely affecting the intrinsic characteristics of the polycarbonate resin, such as transparency, heat resistance, and mechanical properties, e.g., impact resistance. A polycarbonate resin composition containing 100 parts by mass of a polycarbonate resin, 0.001 to 1 part by mass of a metal salt compound, and 0.005 to 5 parts by mass of a polycarbosilane compound has significantly improved flame resistance and high transparency and causes markedly reduced outgassing and mold fouling, without losing impact resistance and heat resistance.

34. 发明授权

US08492476B2 Polycarbonate resin composition and formed product thereof 有权
公开(公告)号：US08492476B2
公开(公告)日：2013-07-23
申请号：US13139229
申请日：2010-01-07
申请人： Toshiki Monden
发明人： Toshiki Monden
IPC分类号： C08L83/00
CPC分类号： C08K5/549 , C08G77/60 , C08K5/42 , C08K5/5419 , C08L27/12 , C08L69/00 , C08L83/16 , C08L83/00
摘要： In a polycarbonate resin composition containing a polycarbonate resin and a polycarbosilane compound, the use of the polycarbosilane compound modifies the surface properties of the polycarbonate resin composition without adversely affecting the intrinsic characteristics of the polycarbonate resin, such as transparency, heat resistance, and mechanical properties, e.g., impact resistance. A polycarbonate resin composition containing 100 parts by mass of a polycarbonate resin, 0.001 to 1 part by mass of a metal salt compound, and 0.005 to 5 parts by mass of a polycarbosilane compound has significantly improved flame resistance and high transparency and causes markedly reduced outgassing and mold fouling, without losing impact resistance and heat resistance.

35. 发明申请

US20130184142A1 METHOD OF TREATING A PRECERAMIC MATERIAL 有权
标题翻译：预处理材料的处理方法
公开(公告)号：US20130184142A1
公开(公告)日：2013-07-18
申请号：US13352584
申请日：2012-01-18
申请人： Wayde R. Schmidt
发明人： Wayde R. Schmidt
IPC分类号： C04B35/622 , C08L83/16 , C08G77/60
CPC分类号： C04B35/62645 , C04B35/013 , C04B35/5156 , C04B35/56 , C04B35/5603 , C04B35/5607 , C04B35/563 , C04B35/571 , C04B2235/3205 , C04B2235/3217 , C04B2235/3224 , C04B2235/3231 , C04B2235/3409 , C04B2235/3895 , C04B2235/483 , C08G77/50 , C08G77/56 , C08G77/58 , C08G77/60
摘要： A method of treating a preceramic material includes modifying a moiety Si—O—R of a polycarbosilane material with at least one metal (M), where Si is silicon, O is oxygen and R includes an alkyl or aryl moiety, by reaction to substitute R with M to produce a preceramic polycarbosilane or polycarbosiloxane material that includes a moiety Si—O-M.
摘要翻译：处理预陶瓷材料的方法包括用至少一种金属（M）修饰聚碳硅烷材料的Si-OR，其中Si是硅，O是氧，R包括烷基或芳基部分，通过反应将R与以制备包含部分Si-OM的陶瓷前体聚碳硅烷或聚碳硅氧烷材料。

36. 发明申请

US20120315392A1 METHOD FOR PRODUCING HYDROGENATED POLYGERMASILANE AND HYDROGENATED POLYGERMASILANE 审中-公开
标题翻译：生产氢化聚甲基硅烷和氢化聚甲基硅烷的方法
公开(公告)号：US20120315392A1
公开(公告)日：2012-12-13
申请号：US13513217
申请日：2010-12-06
申请人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
发明人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold , Thoralf Gebel
IPC分类号： C01B33/00 , B05D3/02 , C09D1/00
CPC分类号： C08G77/60 , C01B33/04 , C01G17/00 , C08G79/14 , Y02P20/582
摘要： A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.
摘要翻译：制备氢化聚锗硅烷作为纯化合物或化合物的混合物的方法包括氢化卤代聚锗硅烷。

37. 发明申请

US20120313037A1 CHLORIDE-CONTAINING SILICON 审中-公开
标题翻译：含氯化硅
公开(公告)号：US20120313037A1
公开(公告)日：2012-12-13
申请号：US13512461
申请日：2010-12-02
申请人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold
发明人： Norbert Auner , Christian Bauch , Sven Holl , Rumen Deltschew , Javad Mohsseni , Gerd Lippold
IPC分类号： C01B33/107 , C09K3/00
CPC分类号： C08G77/60 , C01B33/107 , C01B33/10773
摘要： A chlorinated polysilane has the formula SiClx wherein x=0.01−0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.
摘要翻译：氯化聚硅烷具有式SiClx，其中x = 0.01-0.8，其可以通过在低于600℃的温度下热分解氯代聚硅烷来制备。

38. 发明授权

US08283103B2 Composition for forming resist underlayer film for lithography and production method of semiconductor device 失效
标题翻译：用于形成用于光刻的抗蚀剂下层膜的组合物和半导体器件的制造方法
公开(公告)号：US08283103B2
公开(公告)日：2012-10-09
申请号：US12673926
申请日：2008-08-26
申请人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
发明人： Hikaru Imamura , Yasushi Sakaida , Makoto Nakajima , Satoshi Takei
IPC分类号： G03F7/00 , G03F7/004 , G03F7/11 , G03F7/40
CPC分类号： G03F7/11 , C08G77/60 , C09D183/16 , G03F7/0752
摘要： There is provided a composition for forming a resist underlayer film that can be homogeneously applied and a sublimate is suppressed during the thermal curing. There is also provided a composition for forming a resist underlayer film having a high selection ratio of dry etching relative to a resist applied thereon. A composition for forming a resist underlayer film for lithography comprising: a polysilane compound having a unit structure of Formula (1): (where R1 and R2 are independently a group of —X—Y (where X is an oxygen atom, a C1-18 alkylene group or a group of —OCnH2n— (where n is an integer of 1 to 18) and Y is a lactone ring or an adamantane ring), or one of R1 and R2 is the group of —X—Y and another thereof is an aryl group, a methyl group, an ethyl group or a C3-6 cycloalkyl group); and an organic solvent.
摘要翻译：提供一种用于形成可均匀涂布的抗蚀剂下层膜的组合物，并且在热固化期间抑制升华。还提供了一种用于形成抗蚀剂下层膜的组合物，其具有相对于其上施加的抗蚀剂的干蚀刻的高选择比。一种用于形成光刻用抗蚀剂下层膜的组合物，包括：具有式（1）的单元结构的聚硅烷化合物：（其中R 1和R 2独立地为-X-Y（其中X为氧原子，C1- 18亚烷基或-OC n H 2n - （其中n为1至18的整数）和Y为内酯环或金刚烷环），或者R 1和R 2中的一个为-X-Y基团，另一个为是芳基，甲基，乙基或C 3-6环烷基）; 和有机溶剂。

39. 发明授权

US08242227B2 Doped polysilanes, compositions containing the same, methods for making the same, and films formed therefrom 有权
标题翻译：掺杂的聚硅烷，含有它们的组合物，其制备方法和由其形成的膜
公开(公告)号：US08242227B2
公开(公告)日：2012-08-14
申请号：US13093273
申请日：2011-04-25
申请人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger
发明人： Wenzhuo Guo , Vladimir K. Dioumaev , Joerg Rockenberger
IPC分类号： C08G77/00
CPC分类号： C07F7/0896 , C08G77/60 , C08L83/16
摘要： Doped polysilanes, inks containing the same, and methods for their preparation and use are disclosed. The doped polysilane generally has the formula H-[AaHb(DRx)m]q-[(AcHdR1e)n]p—H, where each instance of A is independently Si or Ge, and D is B, P, As or Sb. In preferred embodiments, R is H, -AfHf+1R2f, alkyl, aryl or substituted aryl, and R1 is independently H, halogen, aryl or substituted aryl. In one aspect, the method of making a doped poly(aryl)silane generally includes the steps of combining a doped silane of the formula AaHb+2(DRx)m (optionally further including a silane of the formula AcHd+2R1e) with a catalyst of the formula R4wR5yMXz (or an immobilized derivative thereof) to form a doped poly(aryl)silane, then removing the metal M. In another aspect, the method of making a doped polysilane includes the steps of halogenating a doped polyarylsilane, and reducing the doped halopolysilane with a metal hydride to form the doped polysilane. The synthesis of semiconductor inks via dehydrocoupling of doped silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, surface tension and dopant level or concentration) and for deposition of doped silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.
摘要翻译：公开了掺杂聚硅烷，含有它们的油墨及其制备和使用方法。掺杂的聚硅烷通常具有式H [AaHb（DRx）m] q - [（AcHdR1e）n] p-H，其中A的每个实例独立地为Si或Ge，D为B，P，As或Sb。在优选的实施方案中，R是H，-AfHf + 1R2f，烷基，芳基或取代的芳基，R1独立地是H，卤素，芳基或取代的芳基。一方面，制备掺杂的聚（芳基）硅烷的方法通常包括将式AaHb + 2（DRx）m的掺杂硅烷（任选进一步包括式AcHd + 2R1e的硅烷）与催化剂（或其固定化的衍生物）以形成掺杂的聚（芳基）硅烷，然后除去金属M.另一方面，制备掺杂聚硅烷的方法包括以下步骤：卤化掺杂的聚芳基硅烷，并将掺杂的卤代聚硅烷与金属氢化物反应形成掺杂的聚硅烷。通过掺杂硅烷和/或锗烷的脱氢键合合半导体油墨允许调节油墨性能（例如粘度，沸点，表面张力和掺杂剂水平或浓度），以及通过旋涂，喷墨来沉积掺杂的硅膜或岛，放映等，有或没有使用紫外线照射。

40. 发明授权

US08227567B2 Conductive polymers from precursor polymers, method of making, and use thereof 有权
标题翻译：来自前体聚合物的导电聚合物，其制备方法和用途
公开(公告)号：US08227567B2
公开(公告)日：2012-07-24
申请号：US11675842
申请日：2007-02-16
申请人： Gregory A. Sotzing
发明人： Gregory A. Sotzing
IPC分类号： C08G75/24 , C08G75/06 , C08G65/04
CPC分类号： C08G61/126 , C08G61/122 , C08G61/123 , C08G77/52 , C08G77/60 , C08G79/00 , H01B1/12 , H01B1/127 , H01L51/0036 , H01L51/0094 , H01L51/5088
摘要： Disclosed herein are precursor polymers containing units of heteroaryls and units of Si, Sn, Ge, or Pb, methods of producing the precursor polymers, and applications utilizing these precursor polymers to prepare conductive polymers.
摘要翻译：本文公开了含有杂芳基单元和Si，Sn，Ge或Pb单元的前体聚合物，制备前体聚合物的方法，以及利用这些前体聚合物制备导电聚合物的应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式