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31. 发明授权

US09260310B2 Copper foil for producing graphene and method of producing graphene using the same 有权
标题翻译：用于生产石墨烯的铜箔和使用其制造石墨烯的方法
公开(公告)号：US09260310B2
公开(公告)日：2016-02-16
申请号：US13985931
申请日：2012-02-20
申请人： Yoshihiro Chiba
发明人： Yoshihiro Chiba
IPC分类号： C01B31/02 , C22F1/02 , C22F1/08 , C22C9/00 , B82Y30/00 , B82Y40/00 , B21B1/40 , C01B31/04 , C22C9/02 , C23F1/18 , B21B3/00
CPC分类号： C01B31/0453 , B21B1/40 , B21B2003/005 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C22C9/00 , C22C9/02 , C22F1/02 , C22F1/08 , C23F1/18 , Y10T428/12431
摘要： A copper foil for producing graphene, having 60 degree gloss of 500% in a rolling direction and a direction transverse to rolling direction, and an average crystal grain size of 200 μm or more after heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon.
摘要翻译：一种用于生产石墨烯的铜箔，在轧制方向上具有500％的光泽度和横向于轧制方向的方向，并且在1000℃下在大气中加热1小时后的平均晶粒尺寸为200μm以上含有20体积％以上的氢气和氩气平衡。

32. 发明申请

US20150098891A1 METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM 有权
标题翻译：制造石墨膜的方法，由其制造的石墨膜，包含石墨膜的电子器件
公开(公告)号：US20150098891A1
公开(公告)日：2015-04-09
申请号：US14456550
申请日：2014-08-11
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
发明人： Yong Won SONG , Jae Hyun PARK
IPC分类号： C01B31/04 , C23C16/46 , C23C16/26
CPC分类号： C01B31/0453 , C01B32/186 , C01B32/194
摘要： A method for manufacturing graphene is provided, comprising (1) introducing a supporting substrate in a reactor; (2) preparing (nano) crystalline alumina catalyst having catalytic activity on the supporting substrate to prepare an insulating substrate; (3) growing nano graphenes on the insulating substrate to manufacture graphene film comprising graphene layer of the nano graphenes, which are grown without use of metal catalyst substantially. The graphene layer composed of the nano graphene has spatially homogeneous structural and electrical properties even in synthesis as large area and can be applied to flexible electronic devices.In addition, as it has easy detachment of the substrate and the graphene film and can detach the graphene film without damage of the substrate, leaving no residual graphene on the substrate, it is possible to grow the nano graphene by reusing the substrate.
摘要翻译：提供了一种制造石墨烯的方法，包括（1）在反应器中引入支撑基底; （2）制备在支撑基板上具有催化活性的（纳米）结晶氧化铝催化剂以制备绝缘基板; （3）在绝缘基板上生长纳米石墨烯以制造包含纳米石墨烯的石墨烯层的石墨烯膜，其基本上不使用金属催化剂而生长。由纳米石墨烯组成的石墨烯层即使在大面积的合成中也具有空间均匀的结构和电性能，并且可以应用于柔性电子器件。此外，由于基板和石墨烯膜易于脱离，并且可以在不损坏基板的情况下分离石墨烯膜，在基板上不留下剩余的石墨烯，因此可以通过重新使用基板来生长纳米石墨烯。

33. 发明授权

US08920661B2 Method for making graphene/carbon nanotube composite structure 有权
标题翻译：制造石墨烯/碳纳米管复合结构的方法
公开(公告)号：US08920661B2
公开(公告)日：2014-12-30
申请号：US13303343
申请日：2011-11-23
申请人： Kai-Li Jiang , Xiao-Yang Lin , Lin Xiao , Shou-Shan Fan
发明人： Kai-Li Jiang , Xiao-Yang Lin , Lin Xiao , Shou-Shan Fan
IPC分类号： H01B13/00 , C03C15/00 , C03C25/68 , H01J1/46 , H01J21/10 , H01M4/13 , H01M4/58 , C01B31/04 , H01M4/04
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2202/08 , C01B2202/34 , C01B2204/02 , C01B2204/04 , C01B2204/24 , H01M4/0404 , H01M4/0428
摘要： A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.
摘要翻译：制造石墨烯/碳纳米管复合结构的方法包括提供包括第一表面和与第一表面相对的第二表面的金属基板，通过CVD方法在金属基板的第一表面上生长石墨烯膜，至少提供一个碳纳米管膜结构，并且将至少一个碳纳米管膜结构与石墨烯膜结合，并将聚合物层与至少一个碳纳米管膜结构和石墨烯膜组合，并形成多个剥离的电极，通过从第二表面蚀刻金属基底。

34. 发明申请

US20140231270A1 METHODS OF NONDESTRUCTIVELY DELAMINATING GRAPHENE FROM A METAL SUBSTRATE 有权
标题翻译：从金属基底层析非线性分析石墨的方法
公开(公告)号：US20140231270A1
公开(公告)日：2014-08-21
申请号：US14344040
申请日：2012-09-04
申请人： Kian Ping Loh , Yu Wang
发明人： Kian Ping Loh , Yu Wang
IPC分类号： C01B31/04
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/19 , C01B32/194 , C25F5/00 , Y02E60/366
摘要： Methods of delaminating a graphene film (60) from a metal substrate (50) are disclosed that substantially preserve the metal substrate. The methods include forming a support layer (80) on the graphene film and then performing an electrochemical process in an electrochemical apparatus (10). The electrochemical process creates gas bubbles (36) at the metal-film interface (64), thereby causing the delamination. The graphene film and support layer form a structure (86) that is collected by a take-up roller (120). The support layer and graphene structure are then separated to obtain the graphene film.
摘要翻译：公开了从金属基板（50）分离石墨烯膜（60）的方法，其基本上保持金属基板。所述方法包括在石墨烯膜上形成支撑层（80），然后在电化学装置（10）中进行电化学处理。电化学过程在金属 - 膜界面（64）处产生气泡（36），从而引起分层。石墨烯膜和支撑层形成由卷取辊（120）收集的结构（86）。然后分离支撑层和石墨烯结构以获得石墨烯膜。

35. 发明申请

US20140017160A1 METHOD AND APPARATUS FOR MANUFACTURING GRAPHENE 有权
标题翻译：制造石墨的方法和装置
公开(公告)号：US20140017160A1
公开(公告)日：2014-01-16
申请号：US13982880
申请日：2012-01-30
申请人： Young-Il Song , Hyeong-Keun Kim , Byung-Hee Hong , Jong-Hyun Ahn
发明人： Young-Il Song , Hyeong-Keun Kim , Byung-Hee Hong , Jong-Hyun Ahn
IPC分类号： C01B31/04
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/26 , C23C16/4582 , C23C16/545
摘要： A method and an apparatus for synthesizing graphene. The method includes loading catalyst metals into a chamber in the horizontal direction or the vertical direction; increasing sizes of grains of the catalyst metals by heating the catalyst metals; raising a temperature inside the chamber while providing a vapor carbon source in the catalyst metals; and forming graphene by cooling the catalyst metals.
摘要翻译：一种用于合成石墨烯的方法和装置。该方法包括将催化剂金属在水平方向或垂直方向上装入室内; 通过加热催化剂金属来增加催化剂金属颗粒的尺寸; 提高室内的温度，同时在催化剂金属中提供蒸汽碳源; 并通过冷却催化剂金属形成石墨烯。

36. 发明申请

US20130187097A1 METHOD FOR PRODUCING GRAPHENE AT A LOW TEMPERATURE, METHOD FOR DIRECT TRANSFER OF GRAPHENE USING SAME, AND GRAPHENE SHEET 有权
标题翻译：在低温下生产石墨的方法，使用其直接转印石墨的方法和石墨片
公开(公告)号：US20130187097A1
公开(公告)日：2013-07-25
申请号：US13810144
申请日：2011-07-15
申请人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
发明人： Byung Hee Hong , Jong-Hyun Ahn , Ji Beom Yoo , Su Kang Bae , Myung Hee Jung , Houk Jang , Youngbin Lee , Sang Jin Kim
IPC分类号： C01B31/04 , C23C16/26
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/01 , C23C16/26
摘要： The present invention relates to a method for forming graphene at a low temperature, to a method for direct transfer of graphene using same, and to a graphene sheet. The method for forming graphene at a low temperature comprises supplying a carbon-source-containing gas to a metal catalyst layer for graphene growth formed on a substrate, and forming graphene at a low temperature of 500° C. or less by means of inductively coupled plasma-chemical vapor deposition (ICP-CVD).
摘要翻译：本发明涉及一种在低温下形成石墨烯的方法，涉及使用其形成石墨烯的直接转移方法和石墨烯片。在低温下形成石墨烯的方法包括向形成在基板上的石墨烯生长用金属催化剂层供给含碳源气体，并通过感应耦合的方式在500℃以下的低温下形成石墨烯等离子体化学气相沉积（ICP-CVD）。

37. 发明申请

US20130149554A1 Graphene Composite and a Method of Manufacturing a Graphene Composite 有权
标题翻译：石墨烯复合材料和制造石墨烯复合材料的方法
公开(公告)号：US20130149554A1
公开(公告)日：2013-06-13
申请号：US13314351
申请日：2011-12-08
申请人： Samiul Md HAQUE , Richard White , Chris Bower
发明人： Samiul Md HAQUE , Richard White , Chris Bower
IPC分类号： B32B9/00 , C01B31/00 , B44C1/17 , B82Y40/00 , B82Y30/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186
摘要： A method including providing graphene on a growth substrate; providing a target substrate on the graphene to form a first composite including the target substrate and graphene; and removing at least a portion of the first composite from the growth substrate.
摘要翻译：一种包括在生长衬底上提供石墨烯的方法; 在所述石墨烯上提供目标衬底以形成包括所述目标衬底和石墨烯的第一复合材料; 以及从所述生长衬底去除所述第一复合材料的至少一部分。

38. 发明申请

US20130071564A1 GRAPHENE DEFECT ALTERATION 有权
标题翻译：石墨缺陷修正
公开(公告)号：US20130071564A1
公开(公告)日：2013-03-21
申请号：US13377971
申请日：2011-09-16
申请人： Seth Miller
发明人： Seth Miller
IPC分类号： C23C16/30 , C23C16/56 , B82Y40/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C23C16/00
摘要： Technologies are generally described for a method and system configured effective to alter a defect area in a layer on a substrate including graphene. An example method may include receiving and heating the layer to produce a heated layer and exposing the heated layer to a first gas to produce a first exposed layer, where the first gas may include an amine. The method may further include exposing the first exposed layer to a first inert gas to produce a second exposed layer and exposing the second exposed layer to a second gas to produce a third exposed layer where the second gas may include an alane or a borane. Exposure of the second exposed layer to the second gas may at least partially alter the defect area.
摘要翻译：一般描述了一种方法和系统的技术，该方法和系统被配置为有效地改变包括石墨烯在内的衬底上的层中的缺陷区域。示例性方法可以包括接收和加热层以产生加热层并将加热层暴露于第一气体以产生第一暴露层，其中第一气体可以包括胺。该方法还可以包括将第一暴露层暴露于第一惰性气体以产生第二暴露层，并将第二暴露层暴露于第二气体以产生第三暴露层，其中第二气体可包括丙烷或硼烷。第二暴露层暴露于第二气体可以至少部分地改变缺陷区域。

39. 发明申请

US20120298618A1 METHOD FOR MAKING GRAPHENE/CARBON NANOTUBE COMPOSITE STRUCTURE 有权
标题翻译：制备石墨/碳纳米管复合结构的方法
公开(公告)号：US20120298618A1
公开(公告)日：2012-11-29
申请号：US13303343
申请日：2011-11-23
申请人： KAI-LI JIANG , XIAO-YANG LIN , LIN XIAO , SHOU-SHAN FAN
发明人： KAI-LI JIANG , XIAO-YANG LIN , LIN XIAO , SHOU-SHAN FAN
IPC分类号： H01B13/00 , B82Y40/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2202/08 , C01B2202/34 , C01B2204/02 , C01B2204/04 , C01B2204/24 , H01M4/0404 , H01M4/0428
摘要： A method for making a graphene/carbon nanotube composite structure includes providing a metal substrate including a first surface and a second surface opposite to the first surface, growing a graphene film on the first surface of the metal substrate by a CVD method, providing at least one carbon nanotube film structure on the graphene film, and combining the at least one carbon nanotube film structure with the graphene film, and combining the polymer layer with the at least one carbon nanotube film structure and the graphene film, and forming a plurality of stripped electrodes by etching the metal substrate from the second surface.
摘要翻译：制造石墨烯/碳纳米管复合结构的方法包括提供包括第一表面和与第一表面相对的第二表面的金属基板，通过CVD方法在金属基板的第一表面上生长石墨烯膜，至少提供一个碳纳米管膜结构，并且将至少一个碳纳米管膜结构与石墨烯膜结合，并将聚合物层与至少一个碳纳米管膜结构和石墨烯膜组合，并形成多个剥离的电极，通过从第二表面蚀刻金属基底。

40. 发明申请

US20120184065A1 METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP 有权
标题翻译：用可制造GAP生产石墨氧化物的方法
公开(公告)号：US20120184065A1
公开(公告)日：2012-07-19
申请号：US13316771
申请日：2011-12-12
申请人： Morteza Gharib , Adrianus Indrat Aria , Adi Wijaya Gani
发明人： Morteza Gharib , Adrianus Indrat Aria , Adi Wijaya Gani
IPC分类号： H01L51/40
CPC分类号： H01L29/24 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B31/0453 , C01B31/0484 , C01B32/186 , C01B32/194 , C01B32/23 , H01L21/02527 , H01L21/02614 , Y10S977/734 , Y10S977/843 , Y10S977/847 , Y10S977/932
摘要： A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.
摘要翻译：提供了一种制造石墨烯氧化物材料的方法，其中氧化被限制在石墨烯层内并且具有期望的带隙。该方法允许开发特定的带隙值。另外，掩模的使用与该方法一致，因此可以实现复杂的配置。所得到的氧化石墨烯材料因此是完全可定制的，并且可以适应于大量有用的工程应用。

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