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31. 发明授权

US07158281B2 MEMs device with feedback control 有权
标题翻译：具有反馈控制的MEMs设备
公开(公告)号：US07158281B2
公开(公告)日：2007-01-02
申请号：US11278761
申请日：2006-04-05
申请人： Zhizhang Chen , Hang Liao , Sriram Ramamoorthi , Timothy F. Myers
发明人： Zhizhang Chen , Hang Liao , Sriram Ramamoorthi , Timothy F. Myers
IPC分类号： G02B26/00
CPC分类号： G09G3/3433 , G02B26/001 , G02B26/0833 , G09G3/346 , G09G3/3466 , G09G2300/0819 , G09G2320/029 , G09G2320/0295 , G09G2360/147
摘要： A MEMS device includes at least one movable member and an active device having at least one property affected by the location of the movable member with respect to the active device. A control circuit is used to limit movement of the movable member based on observation of the property affected by the active device.
摘要翻译： MEMS器件包括至少一个可移动部件和有源器件，该器件具有至少一个受可移动元件相对于有源器件的位置影响的特性。控制电路用于基于受到有源器件影响的性能的观察来限制可动部件的移动。

32. 发明授权

US07002820B2 Semiconductor storage device 有权
标题翻译：半导体存储设备
公开(公告)号：US07002820B2
公开(公告)日：2006-02-21
申请号：US10871761
申请日：2004-06-17
申请人： Zhizhang Chen , Mark David Johnson , Lung Tran
发明人： Zhizhang Chen , Mark David Johnson , Lung Tran
IPC分类号： G11C19/08
CPC分类号： G11B9/1409 , G11B9/00 , G11B9/04 , G11B9/14 , G11B9/1427 , Y10S977/943
摘要： A semiconductor storage device including a tip electrode, a media electrode and a storage media. The storage media has a storage area configurable to be in one of a plurality of structural states to represent information stored at the storage area, by passing a current through the storage area between the tip electrode and media electrode.
摘要翻译：一种半导体存储装置，包括尖端电极，介质电极和存储介质。存储介质具有可配置为处于多个结构状态之一的存储区域，以通过使电流通过尖端电极和介质电极之间的存储区域来表示存储在存储区域的信息。

33. 发明授权

US06984862B2 Storage device with charge trapping structure and methods 失效
标题翻译：具有电荷捕获结构和方法的存储装置
公开(公告)号：US06984862B2
公开(公告)日：2006-01-10
申请号：US10689940
申请日：2003-10-20
申请人： Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Louis Szepesi, Jr. , Heon Lee
发明人： Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Louis Szepesi, Jr. , Heon Lee
IPC分类号： H01L29/788
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1436 , G11B11/08
摘要： A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.
摘要翻译：存储装置包括具有p-掺杂剂的第一半导体层和具有n-掺杂剂的第二半导体层，其设置在第一半导体层上，形成第一和第二半导体层之间的结。存储装置还包括设置在第二半导体层上的电荷捕获结构和导电栅极，其中导电栅极和电荷捕获结构相对于另一个迁移，其中施加在第二半导体层和导电栅极阱上的电场电荷捕获结构中的电荷。

34. 发明申请

US20050082598A1 Storage device with charge trapping structure and methods 失效
标题翻译：具有电荷捕获结构和方法的存储装置
公开(公告)号：US20050082598A1
公开(公告)日：2005-04-21
申请号：US10689940
申请日：2003-10-20
申请人： Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Szepesi , Heon Lee
发明人： Hang Liao , Zhizhang Chen , Alexander Govyadinov , Leslie Szepesi , Heon Lee
IPC分类号： H01L29/06 , G11B9/00 , G11B9/08 , G11B11/08 , H01L27/10 , H01L29/788
CPC分类号： B82Y10/00 , G11B9/08 , G11B9/14 , G11B9/1409 , G11B9/1418 , G11B9/1436 , G11B11/08
摘要： A storage device includes a first semiconducting layer having a p-dopant and a second semiconducting layer having an n-dopant, disposed on the first semiconducting layer forming a junction between the first and the second semiconducting layers. The storage device also includes a charge trapping structure disposed on the second semiconducting layer and a conductive gate, wherein the conductive gate and the charge trapping structure move relative to the other, wherein an electric field applied across the second semiconducting layer and the conductive gate traps charge in the charge trapping structure.
摘要翻译：存储装置包括具有p-掺杂剂的第一半导体层和具有n-掺杂剂的第二半导体层，其设置在第一半导体层上，形成第一和第二半导体层之间的结。存储装置还包括设置在第二半导体层上的电荷捕获结构和导电栅极，其中导电栅极和电荷捕获结构相对于另一个迁移，其中施加在第二半导体层和导电栅极阱上的电场电荷捕获结构中的电荷。

35. 发明授权

US06882100B2 Dielectric light device 有权
公开(公告)号：US06882100B2
公开(公告)日：2005-04-19
申请号：US10337685
申请日：2003-01-06
申请人： Zhizhang Chen , Sriram Ramamoorthi , Terry E McMahon , Timothy F. Myers
发明人： Zhizhang Chen , Sriram Ramamoorthi , Terry E McMahon , Timothy F. Myers
IPC分类号： H01J31/12 , H01J1/312 , H01J9/02 , H01J21/06 , H01L29/02 , H01J1/30
CPC分类号： B82Y10/00 , H01J1/312 , H01J9/022
摘要： A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substantially uniform across the emitter surface.

36. 发明授权

US06841794B2 Dielectric emitter with PN junction 有权
标题翻译：具有PN结的介质发射极
公开(公告)号：US06841794B2
公开(公告)日：2005-01-11
申请号：US10369365
申请日：2003-02-18
申请人： Zhizhang Chen , Hung Liao , Alexander Govyadinov
发明人： Zhizhang Chen , Hung Liao , Alexander Govyadinov
IPC分类号： H01J29/04 , H01J1/308 , H01J1/312 , H01J9/02 , H01J19/24 , H01J21/06 , H01J31/12 , H01L29/06 , H01L29/12
CPC分类号： B82Y10/00 , H01J1/308 , H01J1/312 , H01J9/022 , H01J31/127
摘要： A method for emitting electrons includes the steps of applying a voltage to an electron source to cause hot electrons to be generated with the source, and applying an electric field to cause at least a portion of the hot electrons to be emitted from the electron source.
摘要翻译：用于发射电子的方法包括以下步骤：向电子源施加电压以使源产生热电子，并且施加电场以使至少一部分热电子从电子源发射。

37. 发明授权

US06806488B2 Tunneling emitters and method of making 有权
标题翻译：隧道发射器和制作方法
公开(公告)号：US06806488B2
公开(公告)日：2004-10-19
申请号：US10389556
申请日：2003-03-13
申请人： Sriram Ramamoorthi , Zhizhang Chen
发明人： Sriram Ramamoorthi , Zhizhang Chen
IPC分类号： H01L2906
CPC分类号： B82Y10/00 , G11C11/23 , H01J1/312 , H01J9/025
摘要： An emitter has an electron supply layer and a tunneling layer formed on the electron supply layer. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the tunneling layer is formed. A cathode layer is formed on the tunneling layer. A conductive layer is partially disposed on the cathode layer and partially on the insulator layer if present. The conductive layer defines an opening to provide a surface for energy emissions of electrons and/or photons. Preferably but optionally, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
摘要翻译：发射体具有形成在电子供给层上的电子供给层和隧道层。可选地，在电子供给层上形成绝缘体层，并且在其内形成有形成有隧道层的开口。在隧道层上形成阴极层。导电层部分地设置在阴极层上，部分地设置在绝缘体层上，如果存在的话。导电层限定一个开口以提供用于电子和/或光子的能量发射的表面。优选但是可选地，对发射极进行退火处理，从而增加从电子供给层向阴极层隧穿的电子的供应。

38. 发明授权

US5418019A Method for low temperature plasma enhanced chemical vapor deposition (PECVD) of an oxide and nitride antireflection coating on silicon 失效
标题翻译：硅上氧化物和氮化物抗反射涂层的低温等离子体增强化学气相沉积（PECVD）方法
公开(公告)号：US5418019A
公开(公告)日：1995-05-23
申请号：US248473
申请日：1994-05-25
申请人： Zhizhang Chen , Ajeet Rohatgi
发明人： Zhizhang Chen , Ajeet Rohatgi
IPC分类号： C23C16/34 , C23C16/40 , C23C16/56 , G02B1/11 , B05D3/06 , G02B5/26
CPC分类号： H01L31/02168 , C23C16/345 , C23C16/402 , C23C16/56 , G02B1/115 , Y02E10/50
摘要： A sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiO.sub.x produces a very effective double-layer antireflection coating. This antireflection coating is compared with the frequently used and highly efficient double-layer MgF.sub.2 /ZnS coating. It is shown that the double-layer SiO.sub.x /SiN coating improves the short-circuited current (J.sub.sc) by 47%, open-circuit voltage (V.sub.oc) by 3.7%, and efficiency (Eff) by 55% for silicon cells with oxide surface passivation. The counterpart MgF.sub.2 /ZnS coating gives smaller improvement in V.sub.oc and Eff. However, if silicon cells do not have the oxide passivation, the PECVD SiO.sub.x /SiN gives much greater improvement in the cell parameters, 57% in J.sub.sc, 8% in V.sub.oc, and 66% in efficiency, compared to the MgF.sub.2 /ZnS coating which improves J.sub.sc by 50%, V.sub.oc by 2%, and cell efficiency by 54%. This significant additional improvement results from the PECVD deposition-induced surface/defect passivation. The internal quantum efficiency (IQE) measurements showed that the PECVD SiO.sub.x /SiN coating absorbs fair amount of photons in the short-wavelength range (
摘要翻译： SiN和SiOx的顺序等离子体增强化学气相沉积（PECVD）产生非常有效的双层抗反射涂层。将该抗反射涂层与经常使用且高效的双层MgF2 / ZnS涂层进行比较。显示双层SiOx / SiN涂层将氧化物表面的硅电池的短路电流（Jsc）提高了47％，开路电压（Voc）提高了3.7％，效率（Eff）提高了55％钝化。对应的MgF2 / ZnS涂层在Voc和Eff方面提供较小的改进。然而，如果硅电池不具有氧化物钝化，则与MgF 2 / ZnS涂层相比，PECVD SiO x / SiN在电池参数方面提供了更大的改进，在Jsc中为57％，Voc为8％，效率为66％将Jsc提高50％，Voc提高2％，电池效率提高54％。这种显着的附加改进来自于PECVD沉积诱导的表面/缺陷钝化。内部量子效率（IQE）测量表明，PECVD SiOx / SiN涂层在短波长范围（<500 nm）吸收了相当数量的光子，然而，改进的表面/缺陷钝化比补偿Jsc和与MgF2 / ZnS涂层相比，电池效率提高了很多。

39. 发明授权

US08686412B2 Microelectronic device 有权
标题翻译：微电子器件
公开(公告)号：US08686412B2
公开(公告)日：2014-04-01
申请号：US11888072
申请日：2007-07-31
申请人： Gregory Herman , Benjamin Clark , Zhizhang Chen
发明人： Gregory Herman , Benjamin Clark , Zhizhang Chen
IPC分类号： H01L29/10 , H01L29/12
CPC分类号： H01L21/02118 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/312 , H01L29/7869
摘要： A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.
摘要翻译：微电子器件包括具有形成在氧化物半导体沟道上的氧化物半导体沟道和有机聚合物钝化层的薄膜晶体管。

40. 发明授权

US08023571B2 Impulse ultra-wideband radio communication system 有权
标题翻译：脉冲超宽带无线电通信系统
公开(公告)号：US08023571B2
公开(公告)日：2011-09-20
申请号：US12103117
申请日：2008-04-15
申请人： Hong Nie , Zhizhang Chen
发明人： Hong Nie , Zhizhang Chen
IPC分类号： H04L27/00
CPC分类号： H04B1/719 , H04B1/71637
摘要： A method and apparatus are provided for implementing an impulse ultra-wideband communications system which combines the technique of transmitted reference (TR) with a code-sifted reference scheme that separates the reference and the data pulses with a sequence of codes such as a subset of Walsh codes. The combination of the two techniques in ultra-wideband (UWB) radio systems removes the wideband delay elements required by conventional TR UWB systems. The invention provides a system with no analog carriers and lower complexities than other UWB systems, and which has better performances, higher tolerance to nonlinearity, and larger capacities.
摘要翻译：提供了一种用于实现脉冲超宽带通信系统的方法和装置，该脉冲超宽带通信系统将传输参考（TR）的技术与使用诸如子集的子序列分离参考和数据脉冲的代码筛选参考方案进行组合沃尔什码超宽带（UWB）无线电系统中的两种技术的组合消除了传统TR UWB系统所需的宽带延迟元件。本发明提供了一种没有模拟载波和比其他UWB系统更低复杂度的系统，其具有更好的性能，更高的对非线性的容忍性和更大的容量。

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