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31. 发明申请

US20050223978A1 Technique for high efficiency metalorganic chemical vapor deposition 审中-公开
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US20050223978A1
公开(公告)日：2005-10-13
申请号：US11146953
申请日：2005-06-07
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： B05C11/00 , C23C16/18 , H01L21/02
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

32. 发明授权

US06835995B2 Low dielectric constant material for integrated circuit fabrication 有权
标题翻译：用于集成电路制造的低介电常数材料
公开(公告)号：US06835995B2
公开(公告)日：2004-12-28
申请号：US10033656
申请日：2001-12-27
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01L2900
CPC分类号： H01L21/02126 , C23C16/30 , C23C16/56 , H01L21/02211 , H01L21/02271 , H01L21/0234 , H01L21/02362 , H01L21/31612 , H01L21/76801
摘要： A method is provided for forming a material with a low dielectric constant, suitable for electrical isolation in integrated circuits. The material and method of manufacture has particular use as an interlevel dielectric between metal lines in integrated circuits. In a disclosed embodiment, methylsilane is reacted with hydrogen peroxide to deposit a silicon hydroxide layer incorporating carbon. The layer is then treated by exposure to a plasma containing oxygen, and annealing the layer at a temperature of higher than about 450° C. or higher.
摘要翻译：提供了一种形成具有低介电常数的材料的方法，适用于集成电路中的电隔离。该材料和制造方法特别用作集成电路中的金属线之间的层间电介质。在公开的实施方案中，甲基硅烷与过氧化氢反应以沉积包含碳的氢氧化硅层。然后通过暴露于含有氧的等离子体处理该层，并在高于约450℃或更高的温度下退火该层。

33. 发明授权

US06576538B2 Technique for high efficiency metalorganic chemical vapor deposition 有权
标题翻译：高效金属有机化学气相沉积技术
公开(公告)号：US06576538B2
公开(公告)日：2003-06-10
申请号：US09945567
申请日：2001-08-30
申请人： Weimin Li , Sam Yang
发明人： Weimin Li , Sam Yang
IPC分类号： H01L2144
CPC分类号： C23C16/45523 , C23C16/18 , H01L28/65
摘要： A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
摘要翻译：一种使用化学气相沉积更有效地形成诸如导电层和电极的导电元件的技术。将具有改善步骤覆盖度的有机化合物的导电前体气体，例如铂前体气体引入化学气相沉积室。反应物也被引入室中，与导电元件上的残余有机化合物反应，以便从成核位置除去有机化合物，从而允许更有效的后续化学气相沉积导电元件。

34. 发明授权

US06539341B1 Method and apparatus for log information management and reporting 失效
标题翻译：日志信息管理和报告的方法和装置
公开(公告)号：US06539341B1
公开(公告)日：2003-03-25
申请号：US09706947
申请日：2000-11-06
申请人： Weimin Li , Sajid Hussain , Andrew Nakao , Vikas Khandelwal
发明人： Weimin Li , Sajid Hussain , Andrew Nakao , Vikas Khandelwal
IPC分类号： G06F300
CPC分类号： G01R31/31935 , G01R31/3172
摘要： Log entries in a system that produces status or other log data (ASIC verification system, for example) are saved in a circular buffer until a trigger event occurs. Typically, the system operates on a Device Under Test (DUT), but may apply to other systems that simply monitor or gather information. When the trigger occurs, a window of the saved log entries are saved to disk. A level of granularity of the reporting for the log entries is set at any point between low level (cycle based) reporting (recording every event) to high level functional descriptions of the processes or activities performed by the system, DUT, or other item being monitored. Log data from various modules of the system are grouped together to provide a logical view of the recorded log entries.
摘要翻译：产生状态或其他日志数据的系统中的日志条目（例如，ASIC验证系统）将保存在循环缓冲区中，直到触发事件发生。通常，系统在被测器件（DUT）上运行，但可能适用于简单地监视或收集信息的其他系统。当触发发生时，保存的日志条目的窗口将保存到磁盘。对于日志条目的报告的粒度级别设置在低级（基于周期）报告（记录每个事件）之间的任何时间点到由系统，DUT或其他项目执行的进程或活动的高级功能描述监控。将来自系统的各个模块的日志数据分组在一起以提供记录的日志条目的逻辑视图。

35. 发明授权

US06515363B2 In situ plasma pre-deposition wafer treatment in chemical vapor deposition technology for semiconductor integrated circuit applications 有权
公开(公告)号：US06515363B2
公开(公告)日：2003-02-04
申请号：US09407334
申请日：1999-09-29
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01L2348
CPC分类号： H01L21/76846 , H01L21/28568 , H01L21/76843 , H01L21/76849 , H01L21/76856 , H01L21/76862 , H01L21/76868 , H01L21/76876 , Y10S438/974
摘要： A method of de-oxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered. The method utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing, to remove oxygen molecules from the surface to which adherence of the refractory metal is desired. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.

36. 发明授权

US06198144B1 Passivation of sidewalls of a word line stack 有权
标题翻译：钝化字线堆叠的侧壁
公开(公告)号：US06198144B1
公开(公告)日：2001-03-06
申请号：US09376232
申请日：1999-08-18
申请人： Pai-Hung Pan , Martin C. Roberts , Gurtei S. Sandhu , Weimin Li , Christopher W. Hill , Vishnu K. Agarwal
发明人： Pai-Hung Pan , Martin C. Roberts , Gurtei S. Sandhu , Weimin Li , Christopher W. Hill , Vishnu K. Agarwal
IPC分类号： H01L213205
CPC分类号： H01L21/28167 , H01L21/28061 , H01L21/28176 , H01L27/10873 , H01L29/6653 , H01L29/66545
摘要： A method of fabricating an integrated circuit on a wafer includes forming a gate electrode stack over a gate dielectric and forming nitride spacers along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls. Subsequently, a reoxidation process is performed with respect to the gate dielectric. By providing the nitride spacers along exposed surfaces of conductive barrier and metal layers of the word line stack, those surfaces can be passivated, thereby preventing or reducing the conversion of those layers to non-conductive compounds during the reoxidation process. At the same time, the nitride spacers can be formed so that they do not interfere with the subsequent reoxidation of the gate dielectric. An integrated circuit having a gate electrode stack with nitride spacers extending along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls is also disclosed.
摘要翻译：在晶片上制造集成电路的方法包括在栅极电介质上形成栅极电极堆叠，并且沿着侧壁的最下部分沿着栅电极堆叠的侧壁形成氮化物间隔物。随后，对栅极电介质进行再氧化处理。通过在字线堆叠的导电阻挡层和金属层的暴露表面上设置氮化物间隔物，可以钝化那些表面，从而在再氧化过程期间防止或减少这些层向非导电化合物的转化。同时，可以形成氮化物间隔物，使得它们不干扰栅极电介质的随后的再氧化。还公开了具有栅极电极堆叠的集成电路，其具有沿着侧壁的侧壁延伸的氮化物间隔物，而不是沿着侧壁的最下部分延伸。

37. 发明申请

US20200212477A1 High Power Lithium Ion Battery and the Method to Form 审中-公开
公开(公告)号：US20200212477A1
公开(公告)日：2020-07-02
申请号：US16517601
申请日：2018-02-02
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： H01M10/0525 , H01M4/66 , H01M4/62 , H01M4/04 , H01M2/16
摘要： A lithium ion battery and method of making an electrode is disclosed. The lithium ion battery may comprise an anode, a cathode, a separator. The anode may comprise negative electrode material and a negative current collector. The cathode may comprise positive electrode material and a positive current collector. The negative or positive electrode material forms a continuous negative or positive electrode material layer on the negative or positive current collector. The separator may separate the anode and the cathode. At least one continuous electrode material layer may include a plurality of vertical structures. The vertical structures may have depths into the current collector and sidewalls. The sidewalls may define the plurality of vertical structures. The plurality of the vertical structures may be configured in an array.

38. 发明授权

US08574675B2 Method and composition for depositing ruthenium with assistive metal species 有权
标题翻译：用辅助金属物质沉积钌的方法和组合物
公开(公告)号：US08574675B2
公开(公告)日：2013-11-05
申请号：US13256832
申请日：2010-03-17
申请人： Jorge A. Lubguban, Jr. , Thomas M. Cameron , Chongying Xu , Weimin Li
发明人： Jorge A. Lubguban, Jr. , Thomas M. Cameron , Chongying Xu , Weimin Li
IPC分类号： C23C16/00 , H01L21/28
CPC分类号： C23C16/0272 , C23C16/18 , C23C16/45534 , H01L28/65
摘要： A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non-metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.
摘要翻译：一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌和锶共沉积。该方法允许非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

39. 发明授权

US08093140B2 Amorphous Ge/Te deposition process 有权
标题翻译：无定形Ge / Te沉积工艺
公开(公告)号：US08093140B2
公开(公告)日：2012-01-10
申请号：US12263403
申请日：2008-10-31
申请人： Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
发明人： Philip S. H. Chen , William Hunks , Tianniu Chen , Matthias Stender , Chongying Xu , Jeffrey F. Roeder , Weimin Li
IPC分类号： H01L21/00 , B32B15/04 , C07F7/00
CPC分类号： C07F7/30 , C23C16/305 , C23C16/448 , C23C16/45534 , C23C16/45542 , C23C16/56 , H01L45/06 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further described is the use of [{nBuC(iPrN)2}2Ge] or Ge butyl amidinate to form GeTe smooth amorphous films for phase change memory applications.
摘要翻译：锗，碲和/或锑前体可有效地用于形成含锗，碲和/或锑的膜，例如GeTe，GST和含有热电锗的膜的膜。还描述了使用这些前体形成非晶膜的方法。进一步描述的是使用[{nBuC（iPrN）2} 2Ge]或Ge偕丁酰胺形成用于相变存储器应用的GeTe平滑非晶膜。

40. 发明授权

US07910177B2 Sequential pulse deposition 有权
标题翻译：顺序脉冲沉积
公开(公告)号：US07910177B2
公开(公告)日：2011-03-22
申请号：US11496093
申请日：2006-07-31
申请人： Weimin Li
发明人： Weimin Li
IPC分类号： C23C8/00
CPC分类号： C23C16/45527 , C23C16/4408 , C23C16/45523 , C23C16/52 , H01L21/28506
摘要： A method for growing films on substrates using sequentially pulsed precursors and reactants, system and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method.
摘要翻译：使用顺序脉冲前体和反应物在衬底上生长膜的方法，用于执行该方法的系统和装置，如此制备的半导体器件以及包含该方法的机器可读介质。

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