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    • 36. 发明授权
    • Process for preparation of bevantolol hydrochloride
    • 盐酸比卡洛尔的制备方法
    • US5382689A
    • 1995-01-17
    • US955328
    • 1992-10-01
    • Yutaka Nomura
    • Yutaka Nomura
    • C07C213/04C07C213/10C07C217/60C07C209/16
    • C07C217/60C07C213/04
    • Disclosed is a new process for preparing bevantolol hydrochloride suitable for industrial production in which bevantolol hydrochloride can be obtained in a high yield and HVA of an expensive material can be recovered. The process for the preparation of bevantolol hydrochloride comprises the steps of: causing 3-(m-tolyloxy)-1,2-epoxypropane (TOEP) to react with .beta.-(3,4-dimethoxyphenyl)ethylamine (HVA) of excess mole per mole of said TOEP; dissolving the reaction mixture in a halogenated hydrocarbon to give a solution; mixing the solution with hydrochloric acid; separating an organic layer from the resulting mixture; and obtaining 1-[(3,4-dimethoxyphenethyl)amino]-3-(m-tolyloxy)-2-propanol hydrochloride from the organic layer.
    • 公开了一种适用于工业生产的盐酸替卡洛尔的新方法,其中可以以高产率获得盐酸别卡托洛尔,并且可以回收昂贵材料的HVA。 制备盐酸替卡洛尔的方法包括以下步骤:使3-(间甲酰氧基)-1,2-环氧丙烷(TOEP)与过量摩尔的β-(3,4-二甲氧基苯基)乙胺(HVA)反应 所述TOEP的摩尔数; 将反应混合物溶解在卤代烃中得到溶液; 将溶液与盐酸混合; 从所得混合物中分离有机层; 从有机层中得到1 - [(3,4-二甲氧基苯乙基)氨基] -3-(间甲氧基)-2-丙醇盐酸盐。
    • 40. 发明授权
    • Metal polishing slurry and method of polishing a film to be polished
    • 金属抛光浆料及抛光方法
    • US08791019B2
    • 2014-07-29
    • US12159419
    • 2006-12-27
    • Yutaka NomuraHiroshi NakagawaSou AnzaiAyako TobitaTakafumi SakuradaKatsumi Mabuchi
    • Yutaka NomuraHiroshi NakagawaSou AnzaiAyako TobitaTakafumi SakuradaKatsumi Mabuchi
    • H01L21/306C11D11/00H01L21/321C09G1/02
    • C11D11/0047C09G1/02C09K3/1463H01L21/3212
    • The present invention provides a metal polishing liquid capable of CMP at a high Cu polishing rate and solving the problems: (a) generation of scratches attributable to solid particles, (b) generation of deteriorations in flatness such as dishing and erosion, (c) complexity in a washing process for removing abrasive particles remaining on the surface of a substrate after polishing, and (d) higher costs attributable to the cost of a solid abrasive itself and to waste liquid treatment, as well as a method of polishing a film to be polished by using the same. Disclosed are a metal polishing liquid which comprises a metal oxidizer, a metal oxide solubilizer, a metal anticorrosive, and a water-soluble polymer having an anionic functional group with a weight-average molecular weight of 8,000 or more and has pH 1 or more to 3 or less, and a method of polishing a film to be polished, which comprises supplying the above metal polishing liquid onto a polishing cloth of a polishing platen and simultaneously relatively moving the polishing platen and a substrate having a metallic film to be polished while the substrate is pressed against the polishing cloth.
    • 本发明提供一种能够以高Cu抛光速率进行CMP处理的金属抛光液,并且解决了以下问题:(a)产生由固体颗粒引起的划痕,(b)产生诸如凹陷和腐蚀的平坦度的劣化,(c​​) 用于去除抛光后残留在基材表面上的磨料颗粒的洗涤过程中的复杂性,以及(d)由于固体磨料本身的成本和废液处理造成的更高成本,以及抛光膜的方法 通过使用它来抛光。 公开了一种金属抛光液,其包含金属氧化剂,金属氧化物增溶剂,金属防腐蚀剂和具有重均分子量为8000以上的阴离子官能团的水溶性聚合物,其pH为1以上至 3以下,以及抛光被研磨膜的方法,该方法包括将上述金属抛光液供给到研磨台板的研磨布上,同时相对移动研磨台板和具有待研磨金属膜的基板,同时 基板被压在抛光布上。