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31. 发明授权

US08760884B2 Portable information apparatus 失效
标题翻译：便携式信息设备
公开(公告)号：US08760884B2
公开(公告)日：2014-06-24
申请号：US13149089
申请日：2011-05-31
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H05K7/14 , H05K7/18
CPC分类号： G06F1/1658
摘要： The present disclosure provides a portable information apparatus, including, an apparatus main body, an incidental article mounted on the apparatus main body when the portable information apparatus is used, a solid-state magnetic memory provided at a portion of the apparatus main body at which the incidental article is mounted and adapted to retain information in accordance with a magnetization state of a magnetic material, and a magnetic shield provided on the incidental article including a portion opposed to the solid-state magnetic memory when the incidental article is mounted on the apparatus main body.
摘要翻译：本公开提供了一种便携式信息装置，其包括装置主体，当使用便携式信息装置时安装在装置主体上的附带物品，设置在装置主体的一部分处的固态磁存储器，偶然物品被安装并适于根据磁性材料的磁化状态保持信息，以及设置在附带物品上的磁屏蔽，当附带的物品安装在设备上时，该屏蔽件包括与固态磁性存储器相对的部分主体。

32. 发明授权

US08455968B2 Storage element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：US08455968B2
公开(公告)日：2013-06-04
申请号：US13224369
申请日：2011-09-02
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/10
摘要： Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.
摘要翻译：本文公开了一种存储元件，包括：存储层，其具有与膜表面垂直的磁化，并且其中相对于信息改变磁化方向; 具有垂直于膜表面的磁化的磁化固定层成为由多个磁性层组成的存储在存储层中的信息的参考，并且具有层叠多个磁性层的多层铁笔结构另一个通过非磁性层; 以及由非磁性材料制成并设置在所述存储层和所述磁化固定层之间的绝缘层。

33. 发明授权

US08441082B2 Memory element and memory 失效
标题翻译：内存元素和内存
公开(公告)号：US08441082B2
公开(公告)日：2013-05-14
申请号：US13225775
申请日：2011-09-06
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08
摘要： There is provided a memory element including a magnetic layer that includes FexNiyBz (here, x+y+z=1, 0.2x≦y≦4x, and 0.1(x+y)≦z≦0.4(x+y)) as a main component, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and comes into contact with one face of the magnetic layer.
摘要翻译：提供了包括磁性层的存储元件，其包括FexNiyBz（这里，x + y + z = 1，0.2x @ y @ 4x和0.1（x + y）@ z @ 0.4（x + y））作为主要成分，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构的氧化物形成并与磁性层的一个面接触的氧化物层。

34. 发明申请

US20120061780A1 STORAGE ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120061780A1
公开(公告)日：2012-03-15
申请号：US13224369
申请日：2011-09-02
申请人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
发明人： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
IPC分类号： H01L43/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/10
摘要： Disclosed herein is a storage element, including: a storage layer which has magnetization vertical to a film surface and in which a direction of the magnetization is changed in correspondence to information; a magnetization fixing layer which has magnetization vertical to a film surface becoming a reference of the information stored in the storage layer, which is composed of plural magnetic layers, and which has a multilayered ferri-pin structure into which the plural magnetic layers are laminated one upon another through a non-magnetic layer(s); and an insulating layer made of a non-magnetic material and provided between the storage layer and the magnetization fixing layer.
摘要翻译：本文公开了一种存储元件，包括：存储层，其具有与膜表面垂直的磁化，并且其中相对于信息改变磁化方向; 具有垂直于膜表面的磁化的磁化固定层成为由多个磁性层组成的存储在存储层中的信息的参考，并且具有层叠多个磁性层的多层铁笔结构另一个通过非磁性层; 以及由非磁性材料制成并设置在所述存储层和所述磁化固定层之间的绝缘层。

35. 发明申请

US20120056286A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120056286A1
公开(公告)日：2012-03-08
申请号：US13216474
申请日：2011-08-24
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , G11C11/161
摘要： There is disclosed a memory element including a layered structure including a memory layer that has magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of the layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, and the memory layer and the magnetization-fixed layer have a film thickness in such a manner that an interface magnetic anisotropy energy becomes larger than a diamagnetic energy.
摘要翻译：公开了一种存储元件，其包括层叠结构，该分层结构包括具有垂直于膜面的磁化和其信息方向变化的磁化方向的存储层; 具有垂直于膜面的磁化的磁化固定层; 以及设置在所述存储层之间的绝缘层。自旋极化的电子沿分层结构的层叠方向注入，由此存储层的磁化方向变化，并且相对于存储层执行信息的记录，有效的抗磁场的大小存储层接收小于存储层的饱和磁化量，并且存储层和磁化固定层具有使界面磁各向异性能量变得大于反磁能的方式的膜厚度。

36. 发明申请

US20120001281A1 MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁存储元件和磁记忆
公开(公告)号：US20120001281A1
公开(公告)日：2012-01-05
申请号：US13150995
申请日：2011-06-01
申请人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
发明人： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/10
摘要： Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.
摘要翻译：这里公开了一种磁存储元件，包括：参考层，其被配置为具有固定到预定方向的磁化方向; 记录层，被配置为具有在与记录信息相对应的方向上由于自旋注入而改变的磁化方向; 中间层，被配置为将记录层与参考层分离; 以及被配置为加热记录层的发热体。记录层的材料是这样一种磁性材料，其在150℃下的磁化是在室温下的磁化强度至少为50％，并且在150℃至200℃范围内的温度下的磁化处于在室温下磁化强度为10％至80％。

37. 发明申请

US20110305077A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20110305077A1
公开(公告)日：2011-12-15
申请号：US13098996
申请日：2011-05-02
申请人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
发明人： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/14
CPC分类号： G11C11/161
摘要： Disclosed herein is a memory device, including: a memory element including a memory layer for holding therein information in accordance with a magnetization state of a magnetic material, a fixed magnetization layer which is provided on the memory layer through a non-magnetic layer and whose direction of a magnetization is fixed to a direction parallel with a film surface, and a magnetic layer which is provided on a side opposite to the fixed magnetization layer relative to the memory layer through a non-magnetic layer and whose direction of a magnetization is a direction vertical to the film surface; and a wiring through which a current is caused to flow through the memory element in a direction of lamination of the layers of the memory element.
摘要翻译：这里公开了一种存储器件，包括：存储元件，其包括存储层，用于根据磁性材料的磁化状态保存信息;固定磁化层，其通过非磁性层设置在存储层上，磁化方向固定在与膜表面平行的方向上，磁性层通过非磁性层而相对于存储层设置在与固定磁化层相反的一侧，并且其磁化方向为垂直于膜表面的方向; 以及使电流通过存储元件沿存储元件的层的层叠方向流过的布线。

38. 发明授权

US08867266B2 Method for driving storage element and storage device 有权
标题翻译：驱动存储元件和存储装置的方法
公开(公告)号：US08867266B2
公开(公告)日：2014-10-21
申请号：US13104693
申请日：2011-05-10
申请人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Kazuhiro Bessho , Masanori Hosomi , Hiroyuki Ohmori , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1675
摘要： Disclosed herein is a method for driving a storage element that has a plurality of magnetic layers and performs recording by utilizing spin torque magnetization reversal, the method including applying a pulse voltage having reverse polarity of polarity of a recording pulse voltage in application of the recording pulse voltage to the storage element.
摘要翻译：本发明公开了一种驱动具有多个磁性层并通过利用自旋转矩磁化反转进行记录的存储元件的方法，该方法包括在施加记录脉冲时应用具有与记录脉冲电压极性相反的极性的脉冲电压电压到存储元件。

39. 发明授权

US08853806B2 Memory element and memory 有权
标题翻译：内存元素和内存
公开(公告)号：US08853806B2
公开(公告)日：2014-10-07
申请号：US13221261
申请日：2011-08-30
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , H01L43/08
摘要： There is provided a memory element including a magnetic layer that includes at least one kind of element selected from a group consisting of Fe, Co, and Ni, and carbon, has a content of carbon that is equal to or greater than 3 atomic % and less than 70 atomic % with respect to a total content of Fe, Co, and Ni, and has magnetic anisotropy in a direction perpendicular to a film face; and an oxide layer that is formed of an oxide having a sodium chloride structure or a spinel structure and that comes into contact with the magnetic layer.
摘要翻译：提供了包括磁性层的记忆元件，该磁性层包括从由Fe，Co和Ni组成的组中选择的至少一种元素，碳具有等于或大于3原子％的碳含量，以及相对于Fe，Co和Ni的总含量小于70原子％，并且在垂直于膜面的方向上具有磁各向异性; 以及由具有氯化钠结构或尖晶石结构并与磁性层接触的氧化物形成的氧化物层。

40. 发明授权

US08497139B2 Magnetic memory device and method of manufacturing the same 失效
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US08497139B2
公开(公告)日：2013-07-30
申请号：US13192995
申请日：2011-07-28
申请人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
发明人： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
摘要翻译：一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。

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