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31. 发明申请

US20120201264A1 LIGHT EMITTING DEVICE WITH VARYING BARRIERS 审中-公开
标题翻译：具有变化障碍物的发光装置
公开(公告)号：US20120201264A1
公开(公告)日：2012-08-09
申请号：US13314545
申请日：2011-12-08
申请人： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
发明人： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC分类号： H01S5/34 , H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/007 , H01L33/12 , H01S5/0224 , H01S5/0422 , H01S5/34333
摘要： An emitting device including an active region having quantum wells alternating with barriers of varying compositions is provided. The barriers can be composed of a group III-nitride based material, in which a molar fraction of one or more of the group III elements in two barriers adjacent to a single quantum well differ by at least one percent. Two barriers adjacent to a single quantum well can have barrier heights differing by at least one percent.
摘要翻译：提供了一种发射器件，其包括具有与不同组成的阻挡层交替的量子阱的有源区。障碍物可以由III族氮化物基材料组成，其中与单个量子阱相邻的两个屏障中的III族元素中的一种或多种元素的摩尔分数相差至少1％。与单个量子阱相邻的两个障碍物可以具有至少百分之一百分比的屏障高度。

32. 发明申请

US20110138341A1 Semiconductor Material Doping 有权
标题翻译：半导体材料掺杂
公开(公告)号：US20110138341A1
公开(公告)日：2011-06-09
申请号：US12960476
申请日：2010-12-04
申请人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
发明人： Maxim S. Shatalov , Remigijus Gaska , Jinwei Yang , Michael Shur
IPC分类号： G06F17/50 , H01L21/66
CPC分类号： H01L29/122 , B82Y10/00 , H01L29/155 , H01L29/2003 , H01L29/201 , H01L33/06 , H01L33/32
摘要： A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity corresponds to the target band discontinuity.
摘要翻译：提供了一种用于设计和/或制造包括量子阱和相邻屏障的结构的解决方案。选择量子阱和相邻屏障之间的目标频带不连续性以与量子阱和/或屏障的掺杂剂的活化能一致。例如，可以选择目标价带不连续性，使得相邻势垒中的掺杂剂的掺杂剂能级与量子阱的价态能带边缘和/或价态能带中的自由载流子的基态能量一致量子阱。可以形成量子阱和相邻势垒，使得实际波段不连续性对应于目标波段不连续。

33. 发明授权

US07955882B2 Method of radiation generation and manipulation 有权
标题翻译：辐射生成和操纵的方法
公开(公告)号：US07955882B2
公开(公告)日：2011-06-07
申请号：US12619758
申请日：2009-11-17
申请人： Michael Shur , Victor Ryzhii , Remigijus Gaska
发明人： Michael Shur , Victor Ryzhii , Remigijus Gaska
IPC分类号： H01L21/00
CPC分类号： H01S1/02 , H01S3/094 , H01S3/1628 , H01S2302/02
摘要： A method of managing radiation having a frequency in the terahertz and/or microwave regions. The method comprises providing a semiconducting device having a two-dimensional carrier gas. Plasma waves are generated in the carrier gas using a laser pulse. The frequency of the plasma waves, and as a result, the generated radiation are adjusted using a voltage applied to the semiconducting device.
摘要翻译：一种管理在太赫兹和/或微波区域中具有频率的辐射的方法。该方法包括提供具有二维载气的半导体器件。使用激光脉冲在载气中产生等离子体波。等离子体波的频率，结果，使用施加到半导体器件的电压来调节所产生的辐射。

34. 发明授权

US07619238B2 Heterostructure including light generating structure contained in potential well 有权
标题翻译：含有发光结构的异质结构包含在势阱中
公开(公告)号：US07619238B2
公开(公告)日：2009-11-17
申请号：US11539754
申请日：2006-10-09
申请人： Remigijus Gaska , Michael Shur , Jianping Zhang
发明人： Remigijus Gaska , Michael Shur , Jianping Zhang
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , B82Y20/00
摘要： A light emitting heterostructure and/or device in which the light generating structure is contained within a potential well is provided. The potential well is configured to contain electrons, holes, and/or electron and hole pairs within the light generating structure. A phonon engineering approach can be used in which a band structure of the potential well and/or light generating structure is designed to facilitate the emission of polar optical phonons by electrons entering the light generating structure. To this extent, a difference between an energy at a top of the potential well and an energy of a quantum well in the light generating structure can be resonant with an energy of a polar optical phonon in the light generating structure material. The energy of the quantum well can comprise an energy at the top of the quantum well, an electron ground state energy, and/or the like.
摘要翻译：提供了一种发光异质结构和/或其中发光结构被包含在势阱内的器件。势阱被配置为在发光结构内容纳电子，空穴和/或电子和空穴对。可以使用声子工程方法，其中将潜在阱和/或光产生结构的带结构设计为便于通过进入发光结构的电子发射极性光学声子。在这种程度上，在发光结构材料中，势阱的顶部的能量与光产生结构中的量子阱的能量之间的差可以与极性光学声子的能量共振。量子阱的能量可以包括量子阱顶部的能量，电子基态能量和/或类似物质。

35. 发明授权

US07537950B2 Nitride-based light emitting heterostructure 有权
标题翻译：基于氮化物的发光异质结构
公开(公告)号：US07537950B2
公开(公告)日：2009-05-26
申请号：US11951607
申请日：2007-12-06
申请人： Remigijus Gaska , Jianping Zhang , Michael Shur
发明人： Remigijus Gaska , Jianping Zhang , Michael Shur
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32 , H01S5/105 , H01S5/2009 , H01S5/3216 , H01S5/3407 , H01S5/3415 , H01S5/34333 , H01S5/34346
摘要： An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.
摘要翻译：提供了一种改进的基于氮化物的发光异质结构。氮化物系发光异质结构包括电子供给层和在其间设置有发光结构的空穴供给层。光产生结构包括一组阻挡层，每个阻挡层具有梯度组成和一组量子阱，每个量子阱邻接至少一个势垒层。附加特征，例如每个量子阱的厚度，可以选择/并入异质结构以改善其一个或多个特性。此外，包括渐变组合物的一个或多个附加层可以包含在发光结构外部的异质结构中。渐变的组成层在光生成结构中进入量子阱之前导致电子失去能量，这使得电子能够在量子阱中更有效地与空穴重新组合。

36. 发明申请

US20080203430A1 ENHANCEMENT MODE INSULATED GATE HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR 有权
标题翻译：增强型绝缘栅结构场效应晶体管
公开(公告)号：US20080203430A1
公开(公告)日：2008-08-28
申请号：US11781338
申请日：2007-07-23
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003 , H01L29/402
摘要： Aspects of the present invention provide an enhancement mode (E-mode) insulated gate (IG) double heterostructure field-effect transistor (DHFET) having low power consumption at zero gate bias, low gate currents, and/or high reliability. An E-mode HFET in accordance with an embodiment of the invention includes: top and bottom barrier layers; and a channel layer sandwiched between the bottom and the top barrier layers, wherein the bottom and top barrier layers have a larger bandgap than the channel layer, and wherein polarization charges of the bottom barrier layer deplete the channel layer and polarization charges of the top barrier layer induce carriers in the channel layer; and wherein a total polarization charge in the bottom barrier layer is larger than a total polarization charge in the top barrier layer such that the channel layer is substantially depleted at zero gate bias.
摘要翻译：本发明的方面提供了一种在零栅极偏压，低栅极电流和/或高可靠性下具有低功耗的增强模式（E模式）绝缘栅（IG）双异质结构场效应晶体管（DHFET）。根据本发明的实施例的E型HFET包括：顶部和底部阻挡层; 以及夹在底部和顶部阻挡层之间的沟道层，其中底部和顶部势垒层具有比沟道层更大的带隙，并且其中底部势垒层的极化电荷消耗沟道层和顶部势垒的极化电荷层在沟道层中诱导载流子; 并且其中底部阻挡层中的总极化电荷大于顶部势垒层中的总极化电荷，使得沟道层在零栅极偏压下基本上耗尽。

37. 发明申请

US20060186422A1 Etching a nitride-based heterostructure 有权
标题翻译：蚀刻氮化物基异质结构
公开(公告)号：US20060186422A1
公开(公告)日：2006-08-24
申请号：US11358303
申请日：2006-02-21
申请人： Remigijus Gaska , Xuhong Hu , Qhalid Fareed , Michael Shur
发明人： Remigijus Gaska , Xuhong Hu , Qhalid Fareed , Michael Shur
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L21/30621 , B82Y20/00 , H01L29/2003 , H01L29/7787 , H01L33/007 , H01L33/02 , H01S5/2081 , H01S5/34333 , Y10S438/924 , Y10S977/755
摘要： An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. The etch stop layer also can be selectively etched. In one embodiment, the adjacent layer can be etched using reactive ion etching (RIE) and the etch stop layer is selectively etched using a wet chemical etch. In any event, the selectively etched area can be used to generate a contact or the like for a device.
摘要翻译：提供了用于生产氮化物基异质结构，异质结构器件，集成电路和/或微机电系统的改进的解决方案。包括铟（In）的氮化物基蚀刻停止层包括在异质结构中。选择性地蚀刻异相结构的相邻层以露出蚀刻停止层的至少一部分。也可以选择性地蚀刻蚀刻停止层。在一个实施例中，可以使用反应离子蚀刻（RIE）蚀刻相邻层，并且使用湿化学蚀刻来选择性地蚀刻蚀刻停止层。在任何情况下，可以使用选择性蚀刻的区域来为器件产生接触等。

38. 发明申请

US20050087752A1 Inverted nitride-based semiconductor structure 有权
标题翻译：反向氮化物基半导体结构
公开(公告)号：US20050087752A1
公开(公告)日：2005-04-28
申请号：US10974512
申请日：2004-10-26
申请人： Michael Shur , Remigijus Gaska
发明人： Michael Shur , Remigijus Gaska
IPC分类号： H01L29/20 , H01L29/778 , H01L33/00
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active layer forms an inverted active device channel. By including Indium and forming the inverted active device channel, a device having improved performance characteristics can be manufactured. Further, additional improvements, such as one or more additional layers, a second gate contact, and/or one or more field plates can be included in the device to obtain the desired performance characteristics.
摘要翻译：提供了一种氮化物基半导体结构。该结构包括有源层，其包括反向量子阱结构，其包括铟和氮。该结构可用于产生场效应晶体管。在这种情况下，有源层形成反向的有源器件通道。通过包括铟并形成反向的有源器件沟道，可以制造具有改进的性能特性的器件。此外，可以在该装置中包括额外的改进，例如一个或多个附加层，第二栅极接触和/或一个或多个场板以获得期望的性能特征。

39. 发明授权

US06841809B2 Heterostructure semiconductor device 有权
标题翻译：异质结构半导体器件
公开(公告)号：US06841809B2
公开(公告)日：2005-01-11
申请号：US10659183
申请日：2003-09-10
申请人： Qhalid Fareed , Remigijus Gaska , Michael Shur
发明人： Qhalid Fareed , Remigijus Gaska , Michael Shur
IPC分类号： H01L21/335 , H01L29/20 , H01L31/0328
CPC分类号： H01L29/66462 , H01L29/2003
摘要： A heterostructure semiconductor device that includes a composite layer between an active layer and a gate. The composite layer includes a strain matching layer and a barrier layer. The strain matching layer reduces the strain between the barrier layer and the active layer. The device can incorporate various additional layers as well as gate and/or contact configurations to obtain desired device performance characteristics.
摘要翻译：一种异质结构半导体器件，包括有源层和栅极之间的复合层。复合层包括应变匹配层和阻挡层。应变匹配层减小了阻挡层和有源层之间的应变。该器件可以并入各种附加层以及栅极和/或接触配置以获得期望的器件性能特征。

40. 发明授权

US09263538B2 Ohmic contact to semiconductor 有权
标题翻译：欧姆接触半导体
公开(公告)号：US09263538B2
公开(公告)日：2016-02-16
申请号：US13296581
申请日：2011-11-15
申请人： Remigijus Gaska , Michael Shur
发明人： Remigijus Gaska , Michael Shur
IPC分类号： H01L29/45 , H01L33/38 , H01L33/40
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/417 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40
摘要： An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
摘要翻译：提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。金属层被配置成与二维无载体气体形成接触。

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