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31. 发明授权

US5515314A Storage device 失效
标题翻译：储存设备
公开(公告)号：US5515314A
公开(公告)日：1996-05-07
申请号：US417259
申请日：1995-04-05
申请人： Tohru Kouhei , Hideyuki Kikuchi
发明人： Tohru Kouhei , Hideyuki Kikuchi
IPC分类号： G11C11/14 , G11C11/15
CPC分类号： G11C11/14
摘要： A storage device includes an MR element; write circuit responsive to input of binary storage data indicative of either a first state or a second state, and applying a write magnetic field in a first direction correspondingly to the first state, or applying the write magnetic field in a reverse second direction correspondingly to the second state; and read circuit for applying a bias magnetic field to the MR element and discriminating between the first and second states in accordance with the volume resistivity of the MR element.
摘要翻译：存储装置包括MR元件; 写入电路响应于表示第一状态或第二状态的二进制存储数据的输入，以及对应于第一状态的第一方向施加写入磁场，或者相应于相对于第一状态的反向第二方向施加写入磁场第二状态以及用于向MR元件施加偏置磁场的读取电路，并且根据MR元件的体积电阻率来区分第一状态和第二状态。

32. 发明授权

US08809684B2 Insulated wire 有权
标题翻译：绝缘电线
公开(公告)号：US08809684B2
公开(公告)日：2014-08-19
申请号：US13075286
申请日：2011-03-30
申请人： Takanori Yamazaki , Kiyoshi Watanabe , Junichi Abe , Hideyuki Kikuchi , Daisuke Hino
发明人： Takanori Yamazaki , Kiyoshi Watanabe , Junichi Abe , Hideyuki Kikuchi , Daisuke Hino
IPC分类号： H01B7/00
CPC分类号： H01B3/305 , H01B3/301
摘要： There is provided an insulated wire including a wire conductor and an insulation coating formed on the wire conductor by extrusion coating a resin composition. The resin composition is a mixture of a polyphenylene sulfide-based resin (A) and a polyamide-based resin (B), in which a ratio of parts by mass of the resin (B) to that of the resin (A), i.e. (B)/(A), is not less than 5/95 and not more than 30/70.
摘要翻译：提供了一种绝缘电线，其包括线导体和通过挤出涂覆树脂组合物形成在导线导体上的绝缘涂层。树脂组合物是聚苯硫醚类树脂（A）和聚酰胺类树脂（B）的混合物，其中树脂（B）与树脂（A）的质量份的比例，即（B）/（A），不小于5/95且不大于30/70。

33. 发明授权

US08190036B2 Optical signal receiving apparatus and optical signal attenuation controlling method 有权
标题翻译：光信号接收装置和光信号衰减控制方法
公开(公告)号：US08190036B2
公开(公告)日：2012-05-29
申请号：US12385004
申请日：2009-03-27
申请人： Koshi Kitajima , Sunao Itou , Hideyuki Kikuchi
发明人： Koshi Kitajima , Sunao Itou , Hideyuki Kikuchi
IPC分类号： H04B10/06
CPC分类号： H04B10/674
摘要： A VOA maximum attenuation control circuit has, in addition to a conventional VOA maximum attenuation control circuit, a first resistor and a second resistor, a transistor which is an emitter follower type PNP transistor, and a capacitor. Since charge of the capacitor is 0 volt at the instant when power of the optical interface unit or each optical interface is shifted from OFF state to ON state, current is supplied to a VOA by the transistor in association with shift to the ON state of the power. As a result, attenuation of the VOA reaches maximum. When the capacitor is gradually charged, base potential of the transistor is finally +5 volts, and current is 0 ampere. Then shifting to maximum attenuation control of the VOA by an operational amplifier is realized.
摘要翻译：除了常规的VOA最大衰减控制电路之外，VOA最大衰减控制电路还具有第一电阻器和第二电阻器，作为射极跟随器型PNP晶体管的晶体管和电容器。由于在光接口单元或每个光接口的功率从OFF状态转换到ON状态的瞬间，电容器的充电为0伏，所以通过晶体管将电流提供给VOA，同时转换到ON状态功率。结果，VOA的衰减达到最大。当电容器逐渐充电时，晶体管的基极电位最终为+5伏特，电流为0安培。然后通过运算放大器转移到VOA的最大衰减控制。

34. 发明授权

US07785513B2 Method of manufacturing molded product and method of manufacturing storage medium 有权
标题翻译：制造成型品的方法和制造储存介质的方法
公开(公告)号：US07785513B2
公开(公告)日：2010-08-31
申请号：US12388247
申请日：2009-02-18
申请人： Hiroaki Tamura , Mitsuo Takeuchi , Hideyuki Kikuchi
发明人： Hiroaki Tamura , Mitsuo Takeuchi , Hideyuki Kikuchi
IPC分类号： B29C33/38 , B29C33/40
CPC分类号： B29C33/40
摘要： A method of manufacturing a molded product includes forming a coat film for covering and concealing particles with the surface of a board while filling the gaps among the particles, and separating the coat film for holding the particles on the reverse side from the board. The coat film and the particles are etched from the reverse side of the separated coat film, the particles are removed from the coat film, and an array of dents carved by the particles is formed on the reverse side of the coat film. A film is formed on the reverse side of the coat film, and a molded product having an array of protrusions on the surface is formed from the film.
摘要翻译：制造模制产品的方法包括：在填充颗粒之间的间隙的同时，在板的表面上形成用于覆盖和隐藏颗粒的涂膜，并将用于将颗粒保持在与板相反的一侧的涂膜。从分离的涂膜的背面蚀刻涂膜和颗粒，从涂膜除去颗粒，并且在涂膜的背面形成由颗粒雕刻的凹痕阵列。在涂膜的背面形成有膜，从该膜形成表面具有突起排列的成型品。

35. 发明申请

US20090297169A1 Optical signal receiving apparatus and optical signal attenuation controlling method 有权
标题翻译：光信号接收装置和光信号衰减控制方法
公开(公告)号：US20090297169A1
公开(公告)日：2009-12-03
申请号：US12385004
申请日：2009-03-27
申请人： Koshi Kitajima , Sunao Itou , Hideyuki Kikuchi
发明人： Koshi Kitajima , Sunao Itou , Hideyuki Kikuchi
IPC分类号： H04B10/06
CPC分类号： H04B10/674
摘要： A VOA maximum attenuation control circuit has, in addition to a conventional VOA maximum attenuation control circuit, a first resistor and a second resistor, a transistor which is an emitter follower type PNP transistor, and a capacitor. Since charge of the capacitor is 0 volt at the instant when power of the optical interface unit or each optical interface is shifted from OFF state to ON state, current is supplied to a VOA by the transistor in association with shift to the ON state of the power. As a result, attenuation of the VOA reaches maximum. When the capacitor is gradually charged, base potential of the transistor is finally +5 volts, and current is 0 ampere. Then shifting to maximum attenuation control of the VOA by an operational amplifier is realized.
摘要翻译：除了常规的VOA最大衰减控制电路之外，VOA最大衰减控制电路还具有第一电阻器和第二电阻器，作为射极跟随器型PNP晶体管的晶体管和电容器。由于在光接口单元或每个光接口的功率从OFF状态转换到ON状态的瞬间，电容器的充电为0伏，所以通过晶体管将电流提供给VOA，同时转换到ON状态功率。结果，VOA的衰减达到最大。当电容器逐渐充电时，晶体管的基极电位最终为+5伏特，电流为0安培。然后通过运算放大器转移到VOA的最大衰减控制。

36. 发明授权

US07221547B2 Magnetoresistive effect element, a magnetic head, and a magnetic reproducing apparatus therewith 失效
标题翻译：磁阻效应元件，磁头及其磁性重放装置
公开(公告)号：US07221547B2
公开(公告)日：2007-05-22
申请号：US10465820
申请日：2003-06-19
申请人： Yiqun Zhang , Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi , Hitoshi Kanai
发明人： Yiqun Zhang , Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi , Hitoshi Kanai
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3143 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01L43/08
摘要： A magnetoresistive effect element is a compound lamination including a first anti-ferromagnetic layer, a first fixed magnetic layer, a tunnel insulation layer, a free magnetic layer, a non-magnetic metal layer, a second fixed magnetic layer, and a second anti-ferromagnetic layer such that a TMR element and a SVMR element are formed, sharing the free magnetic layer.
摘要翻译：磁阻效应元件是包括第一反铁磁层，第一固定磁性层，隧道绝缘层，自由磁性层，非磁性金属层，第二固定磁性层和第二抗铁磁性层的复合层压体，铁磁层，使得形成TMR元件和SVMR元件，共享自由磁性层。

37. 发明授权

US07199985B1 Magnetic sensor, magnetic head, magnetic encoder and hard disk device 失效
标题翻译：磁传感器，磁头，磁编码器和硬盘设备
公开(公告)号：US07199985B1
公开(公告)日：2007-04-03
申请号：US09581468
申请日：2000-06-12
申请人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
发明人： Masashige Sato , Hideyuki Kikuchi , Kazuo Kobayashi
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/012 , G11B5/3903 , G11B2005/3996
摘要： A magnetic sensor including a ferromagnetic tunnel junction, comprises a free layer 10 a magnetic direction of which freely rotates, and a barrier layer 11 formed on the free layer and reduces a thickness in a first region, the free layer in a region corresponding to the first region functioning as a sensor portion for sensing an external magnetic field. Such magnetic sensor can provide magnetic sensors, magnetic heads and magnetic encoders having high sensitivity. Furthermore, such magnetic sensor can provide magnetic heads which are adaptable to high recording density of magnetic storage mediums, and hard disk devices of large storage capacities using the magnetic heads.
摘要翻译：包括铁磁隧道结的磁传感器包括其自由旋转的磁方向的自由层10和形成在自由层上的阻挡层11，并减小第一区域中的厚度，对应于第一区域的区域中的自由层第一区域用作感测外部磁场的传感器部分。这种磁传感器可以提供具有高灵敏度的磁传感器，磁头和磁编码器。此外，这种磁传感器可以提供适用于磁存储介质的高记录密度的磁头和使用磁头的大存储容量的硬盘装置。

38. 发明申请

US20060240255A1 Polyamide-imide resin insulating coating material, insulated wire and method of making the same 有权
标题翻译：聚酰胺酰亚胺树脂绝缘涂料，绝缘电线及其制作方法
公开(公告)号：US20060240255A1
公开(公告)日：2006-10-26
申请号：US11312834
申请日：2005-12-21
申请人： Hideyuki Kikuchi , Yuzo Yukimori
发明人： Hideyuki Kikuchi , Yuzo Yukimori
IPC分类号： C08G18/00 , D02G3/00
CPC分类号： H01B3/306 , B05D7/20 , H01B3/305 , Y10T428/2927 , Y10T428/2933 , Y10T428/2938
摘要： A polyamide-imide resin insulating coating material, which is obtained by reacting an isocyanate component with an acid component, has a main solvent component of γ-butyrolactone. In the coating material, a total compounding ratio of 4,4′-diphenylmethane diisocyanate (MDI) and trimellitic anhydride (TMA) is 85 to 98 mol %, where the total compounding ratio is given by averaging a compounding ratio of MDI to the isocyanate component and a compounding ration of TMA to the acid component.
摘要翻译：通过使异氰酸酯成分与酸成分反应得到的聚酰胺酰亚胺树脂绝缘涂料具有γ-丁内酯的主要溶剂成分。在涂料中，4,4'-二苯基甲烷二异氰酸酯（MDI）和偏苯三酸酐（TMA）的总配混比为85-98mol％，其中通过将MDI与异氰酸酯的配混比平均化来给出总配混比组分和TMA与酸组分的配混比。

39. 发明授权

US07059355B2 Pipe for water pipe and the like 失效
标题翻译：水管管等
公开(公告)号：US07059355B2
公开(公告)日：2006-06-13
申请号：US10822128
申请日：2004-04-07
申请人： Tomio Otani , Hideyuki Kikuchi
发明人： Tomio Otani , Hideyuki Kikuchi
IPC分类号： F16L11/00
CPC分类号： F16L58/10 , F16L58/04 , F16L58/06
摘要： The water pipe includes a pipe body which is used as a water pipe, supply-pipe, drainage pipe, including a mixed layer, provided at an inner surface of the pipe body, the mixed layer including a mortar layer and a resin layer and being mixed into a mixture which includes powder of tourmaline ore, granite and charcoal grain powder with effects for far-infrared ray and anion. Therefore, it can improve water quality efficiently and prevent degradation of a pipe, and it can be used in the large flow velocity region without pressure loss of the water pipe line.
摘要翻译：水管包括管体，其用作水管，供给管，排水管，包括混合层，设置在管体的内表面，混合层包括砂浆层和树脂层，并且是混合成包括电气石矿石，花岗岩和木炭粉末的混合物，具有远红外线和阴离子的作用。因此，可以有效地提高水质，防止管道的劣化，可以在大流量区域使用而不会导致水管线的压力损失。

40. 发明授权

US06903400B2 Magnetoresistive memory apparatus 失效
标题翻译：磁阻存储装置
公开(公告)号：US06903400B2
公开(公告)日：2005-06-07
申请号：US10788319
申请日：2004-03-01
申请人： Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
发明人： Hideyuki Kikuchi , Masashige Sato , Kazuo Kobayashi
IPC分类号： H01L27/105 , H01L21/8246 , H01L21/8247 , H01L27/22 , H01L29/76 , H01L31/062 , H01L43/08
CPC分类号： B82Y10/00 , H01L27/228
摘要： A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.
摘要翻译：一种具有半导体衬底的磁阻存储器件，具有多个相交的非接触字线和构成矩阵的位线，以及多个铁磁隧道结器件，位于多条线的每个交叉点附近，每个接合器件都具有通过绝缘层，具有可变磁化方向的自由层和具有固定磁化方向的固定磁化层彼此依次通过磁化信息在由提供给线路的磁化电流选择的交点处被写入存储器件中，磁化信息由检测由于隧道效应而流过存储器件的电流的电阻方差。多个接合装置偏离多个线路的交叉点，并且线路之间的非接触自由层延伸部分仅从自由层延伸，以缩短其间的间隔。

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