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31. 发明授权

US08795763B2 Perpendicular magnetic medium with shields between tracks 有权
标题翻译：轨道之间具有屏蔽的垂直磁性介质
公开(公告)号：US08795763B2
公开(公告)日：2014-08-05
申请号：US12005182
申请日：2007-12-26
申请人： Yuchen Zhou , Lijie Guan , Kunliang Zhang
发明人： Yuchen Zhou , Lijie Guan , Kunliang Zhang
IPC分类号： G11B5/74
CPC分类号： G11B5/746 , B82Y10/00 , C23C14/225 , C23C16/45555 , G11B5/743 , G11B5/82 , G11B5/855
摘要： A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.
摘要翻译：公开了一种轨道屏蔽结构，其能够在图案化的轨道介质中实现更高的轨道密度，而不增加相邻轨迹擦除和侧面读数。这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。还描述了用于制造附加的屏蔽结构的方法。

32. 发明授权

US08490279B2 Method of manufacturing an enhanced hard bias layer in thin film magnetoresistive sensors 有权
标题翻译：在薄膜磁阻传感器中制造增强型硬偏置层的方法
公开(公告)号：US08490279B2
公开(公告)日：2013-07-23
申请号：US12924363
申请日：2010-09-24
申请人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
发明人： Yuchen Zhou , Kenichi Takano , Kunliang Zhang
IPC分类号： G11B5/187
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49046 , Y10T428/1107 , Y10T428/115
摘要： A method of forming a hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed. A HB layer is formed with easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield is deposited on the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading.
摘要翻译：公开了形成用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构的方法。形成具有垂直于底层种子层的易于轴生长的HB层，其形成在衬底上并沿着传感器的两个侧壁。在一个实施例中，可以是顶部屏蔽的共形软磁性层沉积在HB层上以提供补偿HB表面电荷的直接交换耦合。可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。

33. 发明授权

US08300356B2 CoFe/Ni Multilayer film with perpendicular anistropy for microwave assisted magnetic recording 有权
标题翻译： CoFe / Ni多层薄膜与微波辅助磁记录的垂直成像
公开(公告)号：US08300356B2
公开(公告)日：2012-10-30
申请号：US12800196
申请日：2010-05-11
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/235 , G11B5/31 , G11B5/39
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA）在叠层（A1 / A2）X层叠自旋注入层（SIL）中。场发生层（FGL）由高Bs材料如FeCo制成。或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

34. 发明申请

US20130082787A1 Spin injection layer robustness for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录的自旋注入层鲁棒性
公开(公告)号：US20130082787A1
公开(公告)日：2013-04-04
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： H03B7/00 , C23C14/14 , C23C14/35 , B05D5/00 , B05D3/02
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.
摘要翻译：具有在自旋注入层（SIL）和场产生层（FGL）之间形成的非磁性间隔物的自旋转移（扭矩）振荡器（STO），以及由Fe（100-V）CoV组成的界面层，其中v 公开了在SIL和非磁性间隔物之间形成的5至100原子％。使用由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层来增强STO器件中的垂直磁各向异性（PMA）。界面层淬灭SIL振荡，从而使SIL稳定于FGL振荡。界面层优选具有5至50埃的厚度，并且增强STO器件中的振幅（dR / R）。 STO设备可能具有顶部SIL或底部SIL配置。 SIL通常是诸如（Co / Ni）X的层压结构，其中x在5和50之间。

35. 发明授权

US08203389B1 Field tunable spin torque oscillator for RF signal generation 有权
标题翻译：用于RF信号产生的现场可调自旋转矩振荡器
公开(公告)号：US08203389B1
公开(公告)日：2012-06-19
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03L7/26
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

36. 发明申请

US20120139649A1 FIELD TUNABLE SPIN TORQUE OSCILLATOR FOR RF SIGNAL GENERATION 有权
标题翻译：用于RF信号发生的现场可调旋转扭矩振荡器
公开(公告)号：US20120139649A1
公开(公告)日：2012-06-07
申请号：US12928194
申请日：2010-12-06
申请人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
发明人： Yuchen Zhou , Kunliang Zhang , Pokang Wang , Joe Smyth
IPC分类号： H03B28/00
CPC分类号： H03B15/006
摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.
摘要翻译：公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

37. 发明申请

US20120126905A1 Assisting FGL oscillations with perpendicular anisotropy for MAMR 有权
公开(公告)号：US20120126905A1
公开(公告)日：2012-05-24
申请号：US12927699
申请日：2010-11-22
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： H03B28/00 , B05D5/00
CPC分类号： H03B15/006 , B82Y40/00 , G11B5/3146 , G11B2005/0024 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/306 , H01L43/08 , Y10T29/49034 , Y10T428/11 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.

38. 发明申请

US20110279921A1 CoFe/Ni Multilayer film with perpendicular anisotropy for microwave assisted magnetic recording 有权
标题翻译： CoFe / Ni多层薄膜，具有垂直各向异性用于微波辅助磁记录
公开(公告)号：US20110279921A1
公开(公告)日：2011-11-17
申请号：US12800196
申请日：2010-05-11
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/02
CPC分类号： G11B5/235 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/1284 , G11B5/1278 , G11B5/3153 , G11B5/33 , G11B5/3909 , G11B5/3967 , G11B2005/0024 , G11B2005/3996 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01F1/0579 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/305 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A spin transfer oscillator with a seed/SIL/spacer/FGL/capping configuration is disclosed with a composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (A1/A2)X laminated spin injection layer (SIL). Field generation layer (FGL) is made of a high Bs material such FeCo. Alternatively, the STO has a seed/FGL/spacer/SIL/capping configuration. The SIL may include a FeCo layer that is exchanged coupled with the (A1/A2)X laminate (x is 5 to 50) to improve robustness. The FGL may include an (A1/A2)Y laminate (y=5 to 30) exchange coupled with the high Bs layer to enable easier oscillations. A1 may be one of Co, CoFe, or CoFeR where R is a metal, and A2 is one of Ni, NiCo, or NiFe. The STO may be formed between a main pole and trailing shield in a write head.
摘要翻译：公开了具有种子/ SIL /间隔物/ FGL /覆盖构型的自旋转移振荡器，其具有由Ta制成的复合种子层和具有fcc（111）或hcp（001）结构的金属层，以增强垂直磁各向异性（PMA）在叠层（A1 / A2）X层叠自旋注入层（SIL）中。场发生层（FGL）由高Bs材料如FeCo制成。或者，STO具有种子/ FGL /间隔物/ SIL /覆盖配置。 SIL可以包括与（A1 / A2）X层压体交换耦合的FeCo层（x为5至50）以改善坚固性。 FGL可以包括与高Bs层交换耦合的（A1 / A2）Y层叠体（y = 5〜30），以实现更容易的振荡。 A1可以是Co，CoFe或CoFeR中的一种，其中R是金属，A2是Ni，NiCo或NiFe之一。 STO可以形成在写入头中的主极和后屏蔽之间。

39. 发明授权

US08023218B2 Electric field assisted magnetic recording 有权
标题翻译：电场辅助磁记录
公开(公告)号：US08023218B2
公开(公告)日：2011-09-20
申请号：US12313796
申请日：2008-11-25
申请人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
发明人： Yuchen Zhou , Kowang Liu , Kunliang Zhang , Erhard Schreck
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B2005/001
摘要： We describe a system for electric field assisted magnetic recording where a recordable magnetic medium includes a magnetic recording layer of high coercivity and vertical magnetic anisotropy that is adjacent to an electrostrictive layer which can be placed in a state of stress by a electric field or which is already pre-stressed and which pre-stress can be turned into strain by an electric field. When the magnetic medium is acted on simultaneously by a magnetic writing field and an electric field, the stress in the electrostrictive layer is transferred to a magnetostrictive layer which is the magnetic recording layer by itself or is coupled to the magnetic recording layer, whereupon the magnetic recording layer is made more isotropic and more easily written upon. Residual stresses in the electrostrictive layer can then be removed by an additional electric field of opposite sign to the stress-producing field.
摘要翻译：我们描述了一种用于电场辅助磁记录的系统，其中可记录磁介质包括与矫顽力层相邻的具有高矫顽力和垂直磁各向异性的磁记录层，该电致伸缩层可通过电场置于应力状态，已经预应力，哪些预应力可以通过电场变成应变。当磁介质由磁场和电场同时作用时，电致伸缩层中的应力自身转移到作为磁记录层的磁致伸缩层，或耦合到磁记录层，由此磁性记录层变得更加各向同性，更容易写入。电致伸缩层中的残余应力然后可以通过与应力产生场相反的附加电场来去除。

40. 发明授权

US08920947B2 Multilayer structure with high perpendicular anisotropy for device applications 有权
标题翻译：用于器件应用的具有高垂直各向异性的多层结构
公开(公告)号：US08920947B2
公开(公告)日：2014-12-30
申请号：US12802091
申请日：2010-05-28
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/39 , G01R33/06 , G11B5/84 , G01R33/09 , G11B5/66 , G11B5/73 , G11C11/16 , G11B5/00
CPC分类号： G11B5/84 , G01R33/098 , G11B5/3932 , G11B5/66 , G11B5/732 , G11B5/7325 , G11B2005/0024 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1114
摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.
摘要翻译：在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50），以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。在一个实施方案中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

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