专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20080274591A1 CARRIER FOR STACKED TYPE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING STACKED TYPE SEMICONDUCTOR DEVICES 有权
标题翻译：用于堆叠型半导体器件的载体和制造堆叠型半导体器件的方法
公开(公告)号：US20080274591A1
公开(公告)日：2008-11-06
申请号：US12166293
申请日：2008-07-01
申请人： Koji Taya , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Masanori Onodera , Junji Tanaka , Murugasan Manikam Achari
发明人： Koji Taya , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Masanori Onodera , Junji Tanaka , Murugasan Manikam Achari
IPC分类号： H01L21/60
CPC分类号： H01L21/6835 , H01L25/0657 , H01L25/50 , H01L2224/16 , H01L2225/06593 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： A carrier for a stacked-type semiconductor device includes an accommodating section for accommodating stacked semiconductor devices, guide portions guiding the stacked semiconductor devices, and grooves through which a fluid may flow to the accommodating section and to sides of the stacked semiconductor devices. These grooves facilitate the flow of gas or liquid on the sides of the accommodating sections, and it is thus expected that the flow of hot wind during the reflow process and cleaning liquid during the cleaning process can be facilitated. This improves the production yield and the cleaning effects. Holes for connecting the accommodating section to the outside may be provided at corners of the accommodating section. Gas may be guided from the lower side of the accommodating section, so that heat can be efficiently applied to the semiconductor devices and bonding failures therebetween can be reduced. Further, grooves connecting adjacent holes may be provided for accommodating sections adjacent to each other.
摘要翻译：叠层型半导体器件的载体包括用于容纳堆叠的半导体器件的容纳部分，引导堆叠的半导体器件的引导部分和流体可以通过该沟槽流动到容纳部分和堆叠的半导体器件的侧面的沟槽。这些凹槽有助于容纳部分侧面上的气体或液体的流动，因此预期在清洗过程中回流过程中的热风和清洗液体的流动可以被方便。这提高了产量和清洁效果。用于将容纳部分连接到外部的孔可以设置在容纳部分的角部。气体可以从容纳部分的下侧引导，使得可以有效地将热量施加到半导体器件，并且可以减少它们之间的接合故障。此外，可以设置连接相邻孔的槽，用于容纳彼此相邻的部分。

32. 发明申请

US20080191723A1 Ic Carrier, Ic Socket and Method for Testing Ic Device 有权
标题翻译： Ic载体，Ic插座和Ic器件测试方法
公开(公告)号：US20080191723A1
公开(公告)日：2008-08-14
申请号：US11886139
申请日：2005-03-11
申请人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Eichi Osato , Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： G01R31/02 , H05K7/00
CPC分类号： G01R1/0483 , G01R1/0466
摘要： An IC device (10) held on an IC carrier (24) is a double-sided electrode type BGA IC device (10) provided with bump electrodes (14) on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (30), (b) a peripheral portion (32) lower than the protrusion by one step, and (c) upper electrodes (18) formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (36), a cover (40), and a holding means (42). The frame forms a device reception space (38) for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.
摘要翻译：保持在IC载体（24）上的IC器件（10）是在封装的第一表面上设置有凸块电极（14）的双面电极型BGA IC器件（10）。 IC器件在与第一表面相对的第二表面上具有（a）中心突起（30），（b）比突起低一级的周边部分（32），（c）上电极（18）形成在IC器件的周边部分上。 IC载体设有框架（36），盖（40）和保持装置（42）。该帧形成用于接收IC设备的设备接收空间（38）。盖可以覆盖上电极，同时与保持在IC载体上的IC器件的周边接触。保持装置可以将IC器件保持在IC载体上，盖子覆盖IC器件的上部电极。该IC器件可以安装在IC载体上而设置在IC插座中。

33. 发明授权

US07285848B2 Carrier for stacked type semiconductor device and method of fabricating the same 有权
标题翻译：层叠型半导体器件用载体及其制造方法
公开(公告)号：US07285848B2
公开(公告)日：2007-10-23
申请号：US11126739
申请日：2005-05-11
申请人： Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
发明人： Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
IPC分类号： H01L23/02
CPC分类号： H01L25/50 , H01L25/105 , H01L2221/68318 , H01L2224/16 , H01L2225/06586 , H01L2225/06596 , H01L2225/1023 , H01L2225/1058 , H01L2924/14 , H01L2924/15311 , H01L2924/15331
摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.
摘要翻译：叠层型半导体器件的载体包括具有容纳第一半导体器件的第一容纳部分的下载体和具有第二容纳部分的上载体，所述第二容纳部分容纳堆叠在第一半导体器件上的第二半导体器件以便放置在第一半导体器件上的位置。因此，可以消除用于堆叠半导体器件的附加装置，从而降低成本。

34. 发明授权

US07696616B2 Stacked type semiconductor device and method of fabricating stacked type semiconductor device 有权
标题翻译：叠层型半导体器件及其制造方法
公开(公告)号：US07696616B2
公开(公告)日：2010-04-13
申请号：US11339352
申请日：2006-01-25
申请人： Yasuhiro Shinma , Masanori Onodera , Kouichi Meguro , Koji Taya , Junji Tanaka , Junichi Kasai
发明人： Yasuhiro Shinma , Masanori Onodera , Kouichi Meguro , Koji Taya , Junji Tanaka , Junichi Kasai
IPC分类号： H01L23/02
CPC分类号： H05K1/144 , H01L23/49827 , H01L23/5387 , H01L24/73 , H01L25/105 , H01L25/16 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2225/1023 , H01L2225/107 , H01L2924/01004 , H01L2924/01087 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/19041 , H01L2924/19105 , H05K1/023 , H05K1/147 , H05K1/189 , H05K3/361 , H05K3/403 , H05K2201/09181 , H05K2201/10515 , H05K2201/10734 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.
摘要翻译：堆叠型半导体器件包括半导体器件，半导体器件堆叠的插入器，具有设置在其侧面上的电极的插入器以及将电极连接在一起的连接基板。设置在插入件侧面的电极可以通过导电粘合剂或各向异性导电膜中的一种连接到连接基板。

35. 发明申请

US20090093085A1 Carrier Structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device 有权
标题翻译：叠层型半导体器件的载体结构及其制造方法以及叠层型半导体器件的制造方法
公开(公告)号：US20090093085A1
公开(公告)日：2009-04-09
申请号：US12315417
申请日：2008-12-03
申请人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
发明人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
IPC分类号： H01L21/71 , H01L23/48
CPC分类号： H01L21/6835 , H01L21/67336 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/32145 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/3511
摘要： A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.
摘要翻译：用于制造层叠型半导体器件的载体结构包括：具有叠层薄板并具有用于在其上安装第一半导体封装的第一开口的下载体; 以及具有用于将第二半导体封装安装在第一半导体封装上的第二开口的上载体。由层压薄板构成的下部载体由于应力分布在薄板上，因此实现了均匀的板厚度并且减少了翘曲。这导致提高的产量。下载体的薄板中的开口的图案可以通过蚀刻或放电形成。如此形成的开口减少了经纱和毛刺。

36. 发明申请

US20080169544A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080169544A1
公开(公告)日：2008-07-17
申请号：US11654704
申请日：2007-01-17
申请人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
发明人： Junji Tanaka , Junichi Kasai , Kouichi Meguro , Masanori Onodera , Koji Taya
IPC分类号： H01L23/02 , H01L21/00
CPC分类号： H01L25/105 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L24/48 , H01L24/73 , H01L24/97 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/15311 , H01L2924/1532 , H01L2924/15331 , H01L2924/181 , H01L2924/3511 , H01L2224/85 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A method of fabricating a semiconductor device includes: mounting a semiconductor chip on a substrate; forming an upper connection terminal on a side of the substrate on which the semiconductor chip is mounted; forming a resin seal portion that seals the semiconductor chip and the upper connection terminal so that an upper surface of the upper connection terminal is exposed; and shaping the upper connection terminal so that the upper surface of the upper connection terminal becomes lower than an upper surface of the resin seal portion.
摘要翻译：制造半导体器件的方法包括：将半导体芯片安装在基板上; 在其上安装有半导体芯片的基板的一侧上形成上连接端子; 形成密封半导体芯片和上连接端子以使上连接端子的上表面露出的树脂密封部; 并且使上连接端子成形，使得上连接端子的上表面变得低于树脂密封部分的上表面。

37. 发明申请

US20070290320A1 Carrier for stacked type semiconductor device and method of fabricating the same 有权
公开(公告)号：US20070290320A1
公开(公告)日：2007-12-20
申请号：US11894828
申请日：2007-08-22
申请人： Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
发明人： Masanori Onodera , Junichi Kasai , Kouichi Meguro , Junji Tanaka , Yasuhiro Shinma , Koji Taya
IPC分类号： H01L23/02
CPC分类号： H01L25/50 , H01L25/105 , H01L2221/68318 , H01L2224/16 , H01L2225/06586 , H01L2225/06596 , H01L2225/1023 , H01L2225/1058 , H01L2924/14 , H01L2924/15311 , H01L2924/15331
摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.

38. 发明申请

US20070105304A1 Semiconductor device, fabrication method therefor, and film fabrication method 有权
标题翻译：半导体器件及其制造方法以及膜制造方法
公开(公告)号：US20070105304A1
公开(公告)日：2007-05-10
申请号：US11540034
申请日：2006-09-28
申请人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
发明人： Junichi Kasai , Kouichi Meguro , Masanori Onodera
IPC分类号： H01L21/8242 , H01L29/76
CPC分类号： H01L25/0657 , H01L21/563 , H01L23/3128 , H01L23/481 , H01L23/49827 , H01L24/48 , H01L24/73 , H01L2224/16145 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73257 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06541 , H01L2225/06586 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19104 , H05K3/323 , H05K2203/107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.
摘要翻译：本发明提供一种半导体器件及其制造方法和膜制造方法，该半导体器件包括第一衬底（例如，半导体芯片），各向异性导电膜，其设置在第一衬底上并具有布线图案具有通过各向异性导电膜提供导电的至少一部分，以及设置在各向异性导电膜上的第二基板（半导体芯片），并且经由各向异性导电膜提供导电的部分与第一基板耦合。根据本发明，可以提供一种半导体器件及其制造方法和薄膜制造方法，通过该方法可以降低在上下基板中电连接不同位置的生产成本。

39. 发明申请

US20060043600A1 Carrier structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device 有权
公开(公告)号：US20060043600A1
公开(公告)日：2006-03-02
申请号：US11214630
申请日：2005-08-30
申请人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
发明人： Masanori Onodera , Kouichi Meguro , Junichi Kasai , Yasuhiro Shinma , Koji Taya , Junji Tanaka
IPC分类号： H01L23/48
CPC分类号： H01L21/6835 , H01L21/67336 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/32145 , H01L2225/06513 , H01L2225/1023 , H01L2225/1058 , H01L2924/3511
摘要： A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.

40. 发明授权

US08530282B2 Semiconductor device and programming method 有权
公开(公告)号：US08530282B2
公开(公告)日：2013-09-10
申请号：US12900370
申请日：2010-10-07
申请人： Koji Taya , Masanori Onodera , Junji Tanaka , Kouichi Meguro
发明人： Koji Taya , Masanori Onodera , Junji Tanaka , Kouichi Meguro
IPC分类号： H01L21/44
CPC分类号： H01L21/56 , B29C45/02 , B29C45/14655 , B29C45/1671 , H01L21/565 , H01L23/28 , H01L23/3128 , H01L23/3135 , H01L23/552 , H01L24/48 , H01L25/0657 , H01L25/50 , H01L2224/05599 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/85399 , H01L2225/0651 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/3025 , H01L2224/45099 , H01L2924/00 , H01L2924/00012
摘要： The present invention include a semiconductor device and a method therefor, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, by which it is possible to reduce the size of the package and to prevent the generation of an unfilled portion in a resin sealing portion or a filler-removed portion or to prevent the exposure of wire from the resin sealing portion.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式