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    • 31. 发明授权
    • Magneto-resistance effect type head and information reproducing apparatus
    • 垂直偏置底层和磁阻效应型头
    • US06493197B2
    • 2002-12-10
    • US09955358
    • 2001-09-18
    • Junichi ItoMichiaki KanamineHitoshi Kanai
    • Junichi ItoMichiaki KanamineHitoshi Kanai
    • G11B539
    • B82Y25/00B82Y10/00G11B5/00G11B5/3113G11B5/3903G11B5/3932G11B2005/3996
    • The present invention provides a magneto-resistance effect type head for reproducing, with a high sensitivity, information recorded at a high recording density on a recording medium while inhibiting occurrence of the Barkhausen noise, including a magneto-resistance effect element comprised of a multi-layer film containing a free magnetic layer having its magnetization direction changing in correspondence with an external magnetic field, an insulating film, a non-magnetic underlying layer formed on the insulating film, and one pair of magnetic domain-wall control layers formed on the underlying layer in its in-face direction with a predetermined spacing therebetween, for inhibiting movement of magnetic domain wall of the free magnetic layer, in such a configuration that the free magnetic layer has its both ends directly stacked on the pair of the magnetic domain-wall control layers and also has its middle part directly stacked on the underlying layer.
    • 本发明提供了一种用于以高灵敏度将以高记录密度记录在信息记录介质上的信息同时抑制巴克豪森噪声的发生的磁阻效应型磁头,包括由多声道组成的磁阻效应元件, 其包含其磁化方向与外部磁场相对应地变化的自由磁性层,绝缘膜,形成在绝缘膜上的非磁性下层,以及形成在底层上的一对磁畴壁控制层 层之间以预定的间隔在其面内方向上,用于抑制自由磁性层的磁畴壁的移动,使得自由磁性层的两端直接堆叠在一对磁畴壁上 控制层并且其中间部分直接堆叠在下层上。
    • 32. 发明授权
    • Spin valve head, production process thereof and magnetic disk device
    • 旋转阀头,其生产工艺和磁盘装置
    • US06483674B1
    • 2002-11-19
    • US09707179
    • 2000-11-06
    • Hitoshi KanaiJunichi Ito
    • Hitoshi KanaiJunichi Ito
    • G11B5127
    • B82Y25/00B82Y10/00G11B5/3163G11B5/3903G11B5/3932G11B5/3967H01F10/3268
    • A spin valve head comprises a spin valve film comprising a regular antiferromagnetic layer, a pinned magnetic layer, an intermediate layer and a free magnetic layer; a pair of electrodes arranged at both ends of the spin valve film; and a pair of exchange bias magnetic field impressing layers arranged at both ends of the free magnetic layer of the spin valve film, wherein the exchange bias magnetic field impressing layers are made of antiferromagnetic material, and the spin valve film extends over the exchange bias magnetic field impressing layers. The spin valve head is characterized in that the abutted junction region is extended so that the occurrence of Barkhausen noise can be more effectively suppressed; and the abutted junction region is stably formed without being affected by the film formation process.
    • 自旋阀头包括自旋阀膜,其包括规则反铁磁层,钉扎磁性层,中间层和自由磁性层; 布置在自旋阀膜两端的一对电极; 以及布置在自旋阀膜的自由磁性层的两端的一对交换偏置磁场施加层,其中交换偏置磁场施加层由反铁磁材料制成,并且自旋阀膜延伸超过交换偏压磁 现场打印层。 自旋阀头的特征在于,邻接接合区域延伸,从而可以更有效地抑制巴克豪森噪声的发生; 并且在不受膜形成过程的影响的情况下稳定地形成邻接接合区域。
    • 38. 发明授权
    • Magnetoresistive head in which an interlayer coupling field applied to a free magnetic layer is reduced
    • 其中施加到自由磁性层的层间耦合场减小的磁阻头
    • US06819533B2
    • 2004-11-16
    • US09729391
    • 2000-12-04
    • Kenji NomaHitoshi Kanai
    • Kenji NomaHitoshi Kanai
    • G11B539
    • B82Y25/00B82Y10/00G11B5/3903G11B5/3967G11B2005/3996
    • 5 There is disclosed a magnetoresistive head in which an interlayer coupling field Hin applied to a free magnetic layer is minimized. The magnetoresistive head is provided with a magnetoresistive film including: a first antiferromagnetic layer 2; a pinned magnetic layer 3 formed on the first antiferromagnetic layer 2 and provided with magnetization whose direction is fixed; a first nonmagnetic layer 4 formed on the pinned magnetic layer 3; a free magnetic layer 5 formed on the first nonmagnetic layer 4 and provided with magnetization whose direction changes in accordance with an external magnetic field; a second nonmagnetic layer 6 formed on the free magnetic layer 5; and a second antiferromagnetic layer 7, formed on the second nonmagnetic layer 6, for applying a bias magnetic field generated by static interlayer coupling and directed in a direction opposite to magnetization direction of the pinned magnetic layer 3 to the free magnetic layer 5.
    • 公开了一种磁阻头,其中施加到自由磁性层的层间耦合场Hin最小化。 磁阻磁头设置有磁阻膜,包括:第一反铁磁层2; 形成在第一反铁磁层2上并具有方向固定的磁化的钉扎磁性层3; 形成在钉扎磁性层3上的第一非磁性层4; 形成在第一非磁性层4上并具有根据外部磁场的方向变化的磁化的自由磁性层5; 形成在自由磁性层5上的第二非磁性层6; 以及形成在第二非磁性层6上的第二反铁磁性层7,用于施加由静态层间耦合产生的偏磁场,并且沿着与被钉扎的磁性层3的磁化方向相反的方向指向自由磁性层5。
    • 39. 发明授权
    • Spin valve magneto-resistance effect head and a magnetic storage apparatus using the same
    • 旋转阀磁阻效应头和使用其的磁存储装置
    • US06243241B1
    • 2001-06-05
    • US09095414
    • 1998-06-10
    • Hitoshi Kanai
    • Hitoshi Kanai
    • G11B539
    • B82Y25/00B82Y10/00G11B5/00G11B5/3903G11B5/59683G11B2005/0016G11B2005/3996
    • A spin valve magneto-resistance effect head includes a spin valve film, a pair of magnetic shield members, and a support member. Each of the pair of magnetic shield members is arranged opposite to each surface of the spin valve film. The support member is arranged between the spin valve film and the pair of magnetic shield members for setting the relative position therebetween (D1>D2) in order to form a predetermined gap having non-conductivity therebetween. The change of resistivity based on giant magneto-resistance effect for signal magnetic field applied from a storage medium is output from the spin valve film as voltage drop in response to sense current applied from an outside. The antiferromagnetic layer is provided in order to magnetize the pinned layer to a direction orthogonal to the direction of the sense current by forming magnetic field by an exchange coupling to the pinned layer.
    • 自旋阀磁阻效应头包括自旋阀膜,一对磁屏蔽构件和支撑构件。 所述一对磁屏蔽构件中的每一个与所述自旋阀膜的每个表面相对布置。 支撑构件布置在自旋阀膜和一对磁屏蔽构件之间,用于设定它们之间的相对位置(D1> D2),以形成其间具有不导电性的预定间隙。 基于从存储介质施加的信号磁场的巨磁阻效应的电阻率的变化从自旋阀膜输出,作为响应于从外部施加的感测电流的电压降。 提供反铁磁层,以通过通过与被钉扎层的交换耦合而形成磁场来将钉扎层磁化到与感测电流方向正交的方向。