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    • 31. 发明授权
    • Semiconductor integrated circuit device and method of producing the same
    • 半导体集成电路装置及其制造方法
    • US08058131B2
    • 2011-11-15
    • US12949046
    • 2010-11-18
    • Hiroshi HashimotoKoji Takahashi
    • Hiroshi HashimotoKoji Takahashi
    • H01L21/336
    • H01L27/105H01L27/11521H01L27/11526H01L27/11546H01L27/11558H01L29/7883
    • A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of the substrate. The nonvolatile memory device has a multilayer gate electrode structure including a tunnel insulating film and a floating gate electrode formed thereon. The floating gate electrode has sidewall surfaces covered with a protection insulating film. The semiconductor device has a gate insulating film and a gate electrode formed thereon. A bird's beak structure is formed of a thermal oxide film at an interface of the tunnel insulating film and the floating gate electrode, the bird's beak structure penetrating into the floating gate electrode along the interface from the sidewall faces of the floating gate electrode, and the gate insulating film is interposed between the substrate and the gate electrode to have a substantially uniform thickness.
    • 半导体集成电路器件包括衬底,形成在衬底的存储单元区域中的非易失性存储器件以及形成在衬底的器件区域中的半导体器件。 非易失性存储器件具有包括形成在其上的隧道绝缘膜和浮栅电极的多层栅电极结构。 浮栅电极具有用保护绝缘膜覆盖的侧壁表面。 半导体器件具有形成在其上的栅极绝缘膜和栅电极。 鸟喙结构由隧道绝缘膜和浮栅电极的界面处的热氧化膜形成,鸟喙结构沿着与浮栅电极的侧壁面的界面贯穿浮置栅电极,并且 栅极绝缘膜插入在基板和栅电极之间以具有基本均匀的厚度。
    • 33. 发明授权
    • Fixing device and image forming apparatus
    • 固定装置和成像装置
    • US07962083B2
    • 2011-06-14
    • US12056888
    • 2008-03-27
    • Koji Takahashi
    • Koji Takahashi
    • G03G15/20
    • G03G15/2064G03G2215/2035
    • A fixing device forms, with use of an endless belt and a fixing roller that are positioned facing each other, a fixing nip by placing the endless belt in contact with the fixing roller while causing a pressing member to press the endless belt from an inner side thereof against the fixing roller, and fixes an unfixed image onto a recording medium when the recording medium passes through the fixing nip. The fixing device includes (i) a sheet member that is provided between the endless belt and the pressing member and thus reduces friction therebetween, (ii) a supporting mechanism that movably supports the sheet member, and (iii) a sheet member moving part that, when a predetermined condition is not satisfied, keeps the sheet member at rest, and when the predetermined condition is satisfied, moves the sheet member in a certain direction by a predetermined amount.
    • 定影装置通过使环形带与定影辊接触而形成通过将定位辊相互定位的环形带和定影辊,同时使按压部件从内侧按压环形带 并且当记录介质通过定影辊隙时,将未固定的图像固定到记录介质上。 定影装置包括(i)设置在环形带和按压构件之间的片状构件,从而减小它们之间的摩擦力,(ii)可移动地支撑片材构件的支撑机构,以及(iii)片材构件移动部件, 当不满足预定条件时,使片材保持静止,并且当满足预定条件时,将片材沿一定方向移动预定量。
    • 35. 发明授权
    • Semiconductor integrated circuit device and method of producing the same
    • 半导体集成电路装置及其制造方法
    • US07858463B2
    • 2010-12-28
    • US12285289
    • 2008-10-01
    • Hiroshi HashimotoKoji Takahashi
    • Hiroshi HashimotoKoji Takahashi
    • H01L21/8238
    • H01L27/105H01L27/11521H01L27/11526H01L27/11546H01L27/11558H01L29/7883
    • A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of the substrate. The nonvolatile memory device has a multilayer gate electrode structure including a tunnel insulating film and a floating gate electrode formed thereon. The floating gate electrode has sidewall surfaces covered with a protection insulating film. The semiconductor device has a gate insulating film and a gate electrode formed thereon. A bird's beak structure is formed of a thermal oxide film at an interface of the tunnel insulating film and the floating gate electrode, the bird's beak structure penetrating into the floating gate electrode along the interface from the sidewall faces of the floating gate electrode, and the gate insulating film is interposed between the substrate and the gate electrode to have a substantially uniform thickness.
    • 半导体集成电路器件包括衬底,形成在衬底的存储单元区域中的非易失性存储器件以及形成在衬底的器件区域中的半导体器件。 非易失性存储器件具有包括形成在其上的隧道绝缘膜和浮栅电极的多层栅电极结构。 浮栅电极具有用保护绝缘膜覆盖的侧壁表面。 半导体器件具有形成在其上的栅极绝缘膜和栅电极。 鸟喙结构由隧道绝缘膜和浮栅电极的界面处的热氧化膜形成,鸟喙结构沿着与浮栅电极的侧壁面的界面贯穿浮置栅电极,并且 栅极绝缘膜插入在基板和栅电极之间以具有基本均匀的厚度。